JPS5655943A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS5655943A JPS5655943A JP13141679A JP13141679A JPS5655943A JP S5655943 A JPS5655943 A JP S5655943A JP 13141679 A JP13141679 A JP 13141679A JP 13141679 A JP13141679 A JP 13141679A JP S5655943 A JPS5655943 A JP S5655943A
- Authority
- JP
- Japan
- Prior art keywords
- area
- substrate
- pgma
- pattern
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form a pattern with high precision and superior adhesion to the substrate by using a polymer material which acts as a positive type one or a negative type one in accordance with an irradiation source used and carrying out irradiation and development in specified order. CONSTITUTION:Polyglycidyl methacrylate-ethyl acrylate (PGMA-EA) is used as a polymer material which acts as a positive type one in case of exposure to far ultraviolet rays and a negative type one in case of exposure to radiation. Resist material 4 made of PGMA-EA is applied to substrate 1 and preliminarily heat treated. Narrow area 3 alone is exposed to far ultraviolet rays and developed to remove the part of area 3. Desired resist mask forming area 5 is then irradiated with electron beams and developed to leave the irradiated part, forming resist mask 4'. Substrate 1 is finally etched to leave area 5 covered with mask 4' and remove the other part. Thus, a pattern is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141679A JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141679A JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5655943A true JPS5655943A (en) | 1981-05-16 |
Family
ID=15057448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13141679A Pending JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5655943A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141230A (en) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | Formation of pattern |
JPH10104839A (en) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | Hybrid photoresist having low k-coefficient |
-
1979
- 1979-10-12 JP JP13141679A patent/JPS5655943A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141230A (en) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | Formation of pattern |
JPH0544169B2 (en) * | 1983-02-02 | 1993-07-05 | Mitsubishi Electric Corp | |
JPH10104839A (en) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | Hybrid photoresist having low k-coefficient |
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