JPS5655943A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number
JPS5655943A
JPS5655943A JP13141679A JP13141679A JPS5655943A JP S5655943 A JPS5655943 A JP S5655943A JP 13141679 A JP13141679 A JP 13141679A JP 13141679 A JP13141679 A JP 13141679A JP S5655943 A JPS5655943 A JP S5655943A
Authority
JP
Japan
Prior art keywords
area
substrate
pgma
pattern
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13141679A
Other languages
Japanese (ja)
Inventor
Shuzo Oshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13141679A priority Critical patent/JPS5655943A/en
Publication of JPS5655943A publication Critical patent/JPS5655943A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form a pattern with high precision and superior adhesion to the substrate by using a polymer material which acts as a positive type one or a negative type one in accordance with an irradiation source used and carrying out irradiation and development in specified order. CONSTITUTION:Polyglycidyl methacrylate-ethyl acrylate (PGMA-EA) is used as a polymer material which acts as a positive type one in case of exposure to far ultraviolet rays and a negative type one in case of exposure to radiation. Resist material 4 made of PGMA-EA is applied to substrate 1 and preliminarily heat treated. Narrow area 3 alone is exposed to far ultraviolet rays and developed to remove the part of area 3. Desired resist mask forming area 5 is then irradiated with electron beams and developed to leave the irradiated part, forming resist mask 4'. Substrate 1 is finally etched to leave area 5 covered with mask 4' and remove the other part. Thus, a pattern is formed.
JP13141679A 1979-10-12 1979-10-12 Pattern forming method Pending JPS5655943A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13141679A JPS5655943A (en) 1979-10-12 1979-10-12 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13141679A JPS5655943A (en) 1979-10-12 1979-10-12 Pattern forming method

Publications (1)

Publication Number Publication Date
JPS5655943A true JPS5655943A (en) 1981-05-16

Family

ID=15057448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13141679A Pending JPS5655943A (en) 1979-10-12 1979-10-12 Pattern forming method

Country Status (1)

Country Link
JP (1) JPS5655943A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
JPH10104839A (en) * 1996-09-16 1998-04-24 Internatl Business Mach Corp <Ibm> Hybrid photoresist having low k-coefficient

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59141230A (en) * 1983-02-02 1984-08-13 Mitsubishi Electric Corp Formation of pattern
JPH0544169B2 (en) * 1983-02-02 1993-07-05 Mitsubishi Electric Corp
JPH10104839A (en) * 1996-09-16 1998-04-24 Internatl Business Mach Corp <Ibm> Hybrid photoresist having low k-coefficient

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