JPS5655943A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPS5655943A JPS5655943A JP13141679A JP13141679A JPS5655943A JP S5655943 A JPS5655943 A JP S5655943A JP 13141679 A JP13141679 A JP 13141679A JP 13141679 A JP13141679 A JP 13141679A JP S5655943 A JPS5655943 A JP S5655943A
- Authority
- JP
- Japan
- Prior art keywords
- area
- substrate
- pgma
- pattern
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To form a pattern with high precision and superior adhesion to the substrate by using a polymer material which acts as a positive type one or a negative type one in accordance with an irradiation source used and carrying out irradiation and development in specified order. CONSTITUTION:Polyglycidyl methacrylate-ethyl acrylate (PGMA-EA) is used as a polymer material which acts as a positive type one in case of exposure to far ultraviolet rays and a negative type one in case of exposure to radiation. Resist material 4 made of PGMA-EA is applied to substrate 1 and preliminarily heat treated. Narrow area 3 alone is exposed to far ultraviolet rays and developed to remove the part of area 3. Desired resist mask forming area 5 is then irradiated with electron beams and developed to leave the irradiated part, forming resist mask 4'. Substrate 1 is finally etched to leave area 5 covered with mask 4' and remove the other part. Thus, a pattern is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141679A JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13141679A JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5655943A true JPS5655943A (en) | 1981-05-16 |
Family
ID=15057448
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13141679A Pending JPS5655943A (en) | 1979-10-12 | 1979-10-12 | Pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5655943A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141230A (en) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | Formation of pattern |
JPH10104839A (en) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | Hybrid photoresist having low k-coefficient |
-
1979
- 1979-10-12 JP JP13141679A patent/JPS5655943A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59141230A (en) * | 1983-02-02 | 1984-08-13 | Mitsubishi Electric Corp | Formation of pattern |
JPH0544169B2 (en) * | 1983-02-02 | 1993-07-05 | Mitsubishi Electric Corp | |
JPH10104839A (en) * | 1996-09-16 | 1998-04-24 | Internatl Business Mach Corp <Ibm> | Hybrid photoresist having low k-coefficient |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS561536A (en) | Manufacture of resist pattern | |
JPS5655943A (en) | Pattern forming method | |
JPS5461931A (en) | Forming method of photo resist patterns | |
JPS57160127A (en) | Manufacture of transcribe mask for x-ray exposure | |
JPS57124436A (en) | Correction of pattern defect | |
JPS5726170A (en) | Formation of al or al alloy pattern | |
JPS5788729A (en) | Forming method for minute pattern | |
JPS56140345A (en) | Formation of pattern | |
JPS5652751A (en) | Photomask correcting method | |
JPS6483685A (en) | Masking method for minute working | |
JPS5632143A (en) | Manufacture of photomask | |
JPS55134847A (en) | Manufacture of resist image | |
JPS5679428A (en) | Working of ultra-fine article | |
JPS56114943A (en) | Negative type resist material for electron beam | |
JPS56114942A (en) | High energy beam sensitive resist material and its using method | |
JPS5712522A (en) | Forming method of pattern | |
JPS5669625A (en) | Minute pattern forming method | |
JPS55132040A (en) | Pattern forming method | |
JPS56107241A (en) | Dry etching method | |
JPS57207338A (en) | Method for treating resist film for electron beam | |
JPS55144247A (en) | Preparation of photomask | |
JPS55158637A (en) | Dissolving and removing method for resist | |
JPS55163841A (en) | Method for electron beam exposure | |
JPS5558529A (en) | Electron beam exposure | |
JPS56144539A (en) | Formation of fine pattern |