JPS5788729A - Forming method for minute pattern - Google Patents

Forming method for minute pattern

Info

Publication number
JPS5788729A
JPS5788729A JP16342080A JP16342080A JPS5788729A JP S5788729 A JPS5788729 A JP S5788729A JP 16342080 A JP16342080 A JP 16342080A JP 16342080 A JP16342080 A JP 16342080A JP S5788729 A JPS5788729 A JP S5788729A
Authority
JP
Japan
Prior art keywords
pattern
negative
electron beams
type resist
minute pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16342080A
Other languages
Japanese (ja)
Inventor
Toshiaki Tamamura
Osamu Kogure
Takeshi Sukegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16342080A priority Critical patent/JPS5788729A/en
Publication of JPS5788729A publication Critical patent/JPS5788729A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable the formation of a minute pattern having desired width, by applying later electron beams on a negative-type resist pattern formed on a substrate. CONSTITUTION:A negative-type resist film having excellent heat resistivity and being hardly dissolved is formed on a substrate, subjected to the application of electron beams, X-rays or ultraviolet rays and developed, whereby the negative-type resist pattern is formed. Next, electron beams are applied later to this resist pattern to deform the pattern into that in desired size. In a resist, such as the negative-type resist, which has excellent heat resistivity, dissolution by heat or electron beams is little, a pattern is thermally deformed uniformly and thereby the shape of the pattern can be changed. Therefore, the minute pattern having desired width can be formed.
JP16342080A 1980-11-21 1980-11-21 Forming method for minute pattern Pending JPS5788729A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16342080A JPS5788729A (en) 1980-11-21 1980-11-21 Forming method for minute pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16342080A JPS5788729A (en) 1980-11-21 1980-11-21 Forming method for minute pattern

Publications (1)

Publication Number Publication Date
JPS5788729A true JPS5788729A (en) 1982-06-02

Family

ID=15773554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16342080A Pending JPS5788729A (en) 1980-11-21 1980-11-21 Forming method for minute pattern

Country Status (1)

Country Link
JP (1) JPS5788729A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923341A (en) * 1982-07-30 1984-02-06 Japan Synthetic Rubber Co Ltd Resin composition
JPS59116744A (en) * 1982-12-24 1984-07-05 Japan Synthetic Rubber Co Ltd Resin composition sensitive to ionized radiation
JPS6060641A (en) * 1983-09-14 1985-04-08 Japan Synthetic Rubber Co Ltd X-ray resist and its manufacture
JPS60102628A (en) * 1983-11-10 1985-06-06 Japan Synthetic Rubber Co Ltd X-ray resist
JPS6247049A (en) * 1985-08-26 1987-02-28 Hoya Corp Pattern forming method
US6589713B1 (en) * 2001-01-29 2003-07-08 Advanced Micro Devices, Inc. Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5923341A (en) * 1982-07-30 1984-02-06 Japan Synthetic Rubber Co Ltd Resin composition
JPS59116744A (en) * 1982-12-24 1984-07-05 Japan Synthetic Rubber Co Ltd Resin composition sensitive to ionized radiation
JPS6060641A (en) * 1983-09-14 1985-04-08 Japan Synthetic Rubber Co Ltd X-ray resist and its manufacture
JPH0542658B2 (en) * 1983-09-14 1993-06-29 Japan Synthetic Rubber Co Ltd
JPS60102628A (en) * 1983-11-10 1985-06-06 Japan Synthetic Rubber Co Ltd X-ray resist
JPH0513306B2 (en) * 1983-11-10 1993-02-22 Japan Synthetic Rubber Co Ltd
JPS6247049A (en) * 1985-08-26 1987-02-28 Hoya Corp Pattern forming method
US6589713B1 (en) * 2001-01-29 2003-07-08 Advanced Micro Devices, Inc. Process for reducing the pitch of contact holes, vias, and trench structures in integrated circuits

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