JPS55163841A - Method for electron beam exposure - Google Patents

Method for electron beam exposure

Info

Publication number
JPS55163841A
JPS55163841A JP7190179A JP7190179A JPS55163841A JP S55163841 A JPS55163841 A JP S55163841A JP 7190179 A JP7190179 A JP 7190179A JP 7190179 A JP7190179 A JP 7190179A JP S55163841 A JPS55163841 A JP S55163841A
Authority
JP
Japan
Prior art keywords
resist
electron beam
negative resist
dried
beam exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7190179A
Other languages
Japanese (ja)
Other versions
JPS5739048B2 (en
Inventor
Takayuki Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7190179A priority Critical patent/JPS55163841A/en
Publication of JPS55163841A publication Critical patent/JPS55163841A/en
Publication of JPS5739048B2 publication Critical patent/JPS5739048B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Abstract

PURPOSE:To improve the resolution in application and formation of a resist film for IC by forming a protective film for charged particle on a photosensitive negative resist film. CONSTITUTION:A negative resist 5 is applied on the surface of a sample 3 such as a semiconductor wafer or the like and then it is dried. On the upper surface of the above, a positive resist 6 is applied, dried, an electron beam is exposed and a negative resist 5 is irradiated completely through a positive resist 6. After giving an exposure, the positive resist 6 is removed by dissolution using an organic solvent, developed by the developing solution of negative resist 5 and the desired pattern is formed.
JP7190179A 1979-06-08 1979-06-08 Method for electron beam exposure Granted JPS55163841A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7190179A JPS55163841A (en) 1979-06-08 1979-06-08 Method for electron beam exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7190179A JPS55163841A (en) 1979-06-08 1979-06-08 Method for electron beam exposure

Publications (2)

Publication Number Publication Date
JPS55163841A true JPS55163841A (en) 1980-12-20
JPS5739048B2 JPS5739048B2 (en) 1982-08-19

Family

ID=13473898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7190179A Granted JPS55163841A (en) 1979-06-08 1979-06-08 Method for electron beam exposure

Country Status (1)

Country Link
JP (1) JPS55163841A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685861B1 (en) 2005-11-14 2007-02-22 재단법인서울대학교산학협력재단 Method for forming the nano-scale pattern of e-beam resist
KR100763227B1 (en) 2006-04-04 2007-10-04 삼성전자주식회사 A photomask using separated expose technique, method for fabricating the photomask and an apparatus for fabricating the photomask using the method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62275768A (en) * 1986-05-24 1987-11-30 Sony Corp Printer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100685861B1 (en) 2005-11-14 2007-02-22 재단법인서울대학교산학협력재단 Method for forming the nano-scale pattern of e-beam resist
KR100763227B1 (en) 2006-04-04 2007-10-04 삼성전자주식회사 A photomask using separated expose technique, method for fabricating the photomask and an apparatus for fabricating the photomask using the method
US7939223B2 (en) 2006-04-04 2011-05-10 Samsung Electronics Co., Ltd. Photomask using separated exposure technique, method of fabricating photomask, and apparatus for fabricating photomask by using the method

Also Published As

Publication number Publication date
JPS5739048B2 (en) 1982-08-19

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