JPS5760331A - Developing method for electron beam resist - Google Patents
Developing method for electron beam resistInfo
- Publication number
- JPS5760331A JPS5760331A JP13490080A JP13490080A JPS5760331A JP S5760331 A JPS5760331 A JP S5760331A JP 13490080 A JP13490080 A JP 13490080A JP 13490080 A JP13490080 A JP 13490080A JP S5760331 A JPS5760331 A JP S5760331A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- developing
- solns
- polymethyl methacrylate
- beam resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
Abstract
PURPOSE:To improve sensitivity and perform developing treatment free from wear of the film by developing the electron beam resist consisting of polymethyl methacrylate with mixed solns. of isopropyl alcohol and nitromethane. CONSTITUTION:The electron beam resist prepd. by dissolving polymethyl methacrylate in a solvent is coated on a substrate and is subjected to heat treatment, after which it is subjected to electron beam exposure. Thence, this is developed by using a developing solns. consisting of mixed solns. of isopropyl alcohol and nitromethane. Thereby, the sensitivity is made 2-3 times higher than that when commonly used high energy developing solns. are used, and polymethyl methacrylate is usable as resist of high practicability in semiconductor industry.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13490080A JPS5760331A (en) | 1980-09-27 | 1980-09-27 | Developing method for electron beam resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13490080A JPS5760331A (en) | 1980-09-27 | 1980-09-27 | Developing method for electron beam resist |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5760331A true JPS5760331A (en) | 1982-04-12 |
Family
ID=15139140
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13490080A Pending JPS5760331A (en) | 1980-09-27 | 1980-09-27 | Developing method for electron beam resist |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5760331A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135236A (en) * | 2006-11-27 | 2008-06-12 | Matsushita Electric Works Ltd | Rotary switch |
-
1980
- 1980-09-27 JP JP13490080A patent/JPS5760331A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008135236A (en) * | 2006-11-27 | 2008-06-12 | Matsushita Electric Works Ltd | Rotary switch |
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