JPS558013A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method

Info

Publication number
JPS558013A
JPS558013A JP7940478A JP7940478A JPS558013A JP S558013 A JPS558013 A JP S558013A JP 7940478 A JP7940478 A JP 7940478A JP 7940478 A JP7940478 A JP 7940478A JP S558013 A JPS558013 A JP S558013A
Authority
JP
Japan
Prior art keywords
resist
photo
insoluble
film
resists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7940478A
Other languages
Japanese (ja)
Inventor
Kenji Sugishima
Kazuo Tokitomo
Satoshi Suda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7940478A priority Critical patent/JPS558013A/en
Publication of JPS558013A publication Critical patent/JPS558013A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To simplify resist-manufacturing process by using resists of the same kind in multiple layers in such a manner as to turn a photo-resist into insoluble to an exclusive developer at a given time and also make it insoluble to a resist itself.
CONSTITUTION: If 1-hyroxyl and 2-alkylimidazolin are solved in a positive type photo-resist, the resist becomes almost insoluble to a developer if it is heated to approximately 120°C or more. If the photo-resist film is exposed to an inert gas plasma for several minutes, even if another coating of photo-resist was applied onto the film, it (the bottom resist film) is not solved. By utilizing these phenomena, it is possible to use positive type photo-resists in multiple layers and also to simplify the manufacturing process.
COPYRIGHT: (C)1980,JPO&Japio
JP7940478A 1978-06-30 1978-06-30 Semiconductor device manufacturing method Pending JPS558013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7940478A JPS558013A (en) 1978-06-30 1978-06-30 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7940478A JPS558013A (en) 1978-06-30 1978-06-30 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
JPS558013A true JPS558013A (en) 1980-01-21

Family

ID=13688910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7940478A Pending JPS558013A (en) 1978-06-30 1978-06-30 Semiconductor device manufacturing method

Country Status (1)

Country Link
JP (1) JPS558013A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112023A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS59228648A (en) * 1983-06-10 1984-12-22 Sumitomo Electric Ind Ltd Method for developing photoresist
EP2989138B1 (en) 2013-04-22 2018-08-01 Perstorp Ab Urethane acrylates based on 2,4,8,10-tetraoxospiro[5.5]undecane-3,9-dialkanols

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112023A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
JPS59228648A (en) * 1983-06-10 1984-12-22 Sumitomo Electric Ind Ltd Method for developing photoresist
EP2989138B1 (en) 2013-04-22 2018-08-01 Perstorp Ab Urethane acrylates based on 2,4,8,10-tetraoxospiro[5.5]undecane-3,9-dialkanols

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