JPS5740928A - Processing method of resist - Google Patents

Processing method of resist

Info

Publication number
JPS5740928A
JPS5740928A JP11750480A JP11750480A JPS5740928A JP S5740928 A JPS5740928 A JP S5740928A JP 11750480 A JP11750480 A JP 11750480A JP 11750480 A JP11750480 A JP 11750480A JP S5740928 A JPS5740928 A JP S5740928A
Authority
JP
Japan
Prior art keywords
resist
irradiated
film
pinholeless
bridging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11750480A
Other languages
Japanese (ja)
Inventor
Hiromi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11750480A priority Critical patent/JPS5740928A/en
Publication of JPS5740928A publication Critical patent/JPS5740928A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To increase the pinholeless property and the microscopic workability for the subject resist by a method wherein, when a beam is irradiated and exposed on the resist which was applied on a film to be processed, the beam is at first irradiated at low voltage, then it is irradiated at high voltage, a developing process is performed and a stepped aperture pattern is formed. CONSTITUTION:An electron beam resist 17 is applied on the surface of the film to be processed on a substrate 1 until enough thickness, with which no pinholes will be generated, is formed. This resist is exposed to the beam 18 of a low voltage. The beam is to be used in the intensity with which the principal chain or a bridging of the resist material will be cut and that the monomoleculing action will not reach the lower surface of the resist. When the beam is irradiated using a high voltage without changing the position of the wafer to be irradiated, the beam passes through a resist film 19 and cuts the principal chain and the bridging of the remaining resist 20 located at the lower part. A two-stepped resist aperture 2 can be formed by performing an ordinary developing process. Through these procedures, the pinholeless property can be increased and the microscopic working can also be performed.
JP11750480A 1980-08-25 1980-08-25 Processing method of resist Pending JPS5740928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11750480A JPS5740928A (en) 1980-08-25 1980-08-25 Processing method of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11750480A JPS5740928A (en) 1980-08-25 1980-08-25 Processing method of resist

Publications (1)

Publication Number Publication Date
JPS5740928A true JPS5740928A (en) 1982-03-06

Family

ID=14713379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11750480A Pending JPS5740928A (en) 1980-08-25 1980-08-25 Processing method of resist

Country Status (1)

Country Link
JP (1) JPS5740928A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177325A (en) * 1984-09-21 1986-04-19 Fujitsu Ltd Pattern formation
JPS6184832A (en) * 1984-10-02 1986-04-30 Mitsubishi Electric Corp Pattern formation
JPS61228622A (en) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp Formation of electrode pattern
US5468595A (en) * 1993-01-29 1995-11-21 Electron Vision Corporation Method for three-dimensional control of solubility properties of resist layers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6177325A (en) * 1984-09-21 1986-04-19 Fujitsu Ltd Pattern formation
JPS6184832A (en) * 1984-10-02 1986-04-30 Mitsubishi Electric Corp Pattern formation
JPS61228622A (en) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp Formation of electrode pattern
US5468595A (en) * 1993-01-29 1995-11-21 Electron Vision Corporation Method for three-dimensional control of solubility properties of resist layers

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