JPS56125830A - Uniform exposure patterning method in electron beam patterning device - Google Patents

Uniform exposure patterning method in electron beam patterning device

Info

Publication number
JPS56125830A
JPS56125830A JP2793080A JP2793080A JPS56125830A JP S56125830 A JPS56125830 A JP S56125830A JP 2793080 A JP2793080 A JP 2793080A JP 2793080 A JP2793080 A JP 2793080A JP S56125830 A JPS56125830 A JP S56125830A
Authority
JP
Japan
Prior art keywords
patterning
electron beam
accuracy
section
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2793080A
Other languages
Japanese (ja)
Inventor
Yoshihiko Suenaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2793080A priority Critical patent/JPS56125830A/en
Publication of JPS56125830A publication Critical patent/JPS56125830A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To reduce the exposing time without losing the required accuracy for the subject patterning device by a method wherein the microscopic chip pattern of an integrated circuit is patterned using an electron beam and the section where no accuracy is required particularly is exposed using X-rays. CONSTITUTION:After the microscopic pattern 3 of a sample 1 is patterned highly accurately using the electron beam 5, the frame-shaped exposure section 2 where no accuracy is required, comperatively speaking, is exposed in a short time by using X-rays 17 and the screening plate 20 which will be used to screen the X-rays 17. When these procedures are performed, the performance of the patterning with the electron beam having a slow patterning speed is not required for the section where no accuracy is required and the exposing time can therefore be reduced. Especially, in the case where the patterning for a large area such as a framing is required, besides the microscopic patterning on the sample, is required to be exposed in a short time, the exposure of the frame-shape exposure section can be performed without using an electron beam, thereby enabling to improve the efficiency of a circuit pattern formation.
JP2793080A 1980-03-07 1980-03-07 Uniform exposure patterning method in electron beam patterning device Pending JPS56125830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2793080A JPS56125830A (en) 1980-03-07 1980-03-07 Uniform exposure patterning method in electron beam patterning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2793080A JPS56125830A (en) 1980-03-07 1980-03-07 Uniform exposure patterning method in electron beam patterning device

Publications (1)

Publication Number Publication Date
JPS56125830A true JPS56125830A (en) 1981-10-02

Family

ID=12234602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2793080A Pending JPS56125830A (en) 1980-03-07 1980-03-07 Uniform exposure patterning method in electron beam patterning device

Country Status (1)

Country Link
JP (1) JPS56125830A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58502173A (en) * 1981-12-21 1983-12-15 バロ−ス・コ−ポレ−ション Improvements in and relating to wafer scale integrated circuits
JPS5919324A (en) * 1982-07-24 1984-01-31 Mitsubishi Electric Corp Exposing device
JPS59117214A (en) * 1982-12-20 1984-07-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming exposure pattern by electron beam and light
JPS61240280A (en) * 1985-04-18 1986-10-25 松下電器産業株式会社 Pattern formation
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58502173A (en) * 1981-12-21 1983-12-15 バロ−ス・コ−ポレ−ション Improvements in and relating to wafer scale integrated circuits
JPS5919324A (en) * 1982-07-24 1984-01-31 Mitsubishi Electric Corp Exposing device
JPS59117214A (en) * 1982-12-20 1984-07-06 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming exposure pattern by electron beam and light
JPS61240280A (en) * 1985-04-18 1986-10-25 松下電器産業株式会社 Pattern formation
JPS6247129A (en) * 1985-08-26 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device

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