JPS5745235A - Exposure by x-ray - Google Patents

Exposure by x-ray

Info

Publication number
JPS5745235A
JPS5745235A JP55120584A JP12058480A JPS5745235A JP S5745235 A JPS5745235 A JP S5745235A JP 55120584 A JP55120584 A JP 55120584A JP 12058480 A JP12058480 A JP 12058480A JP S5745235 A JPS5745235 A JP S5745235A
Authority
JP
Japan
Prior art keywords
regions
exposed
ray
wafer
rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55120584A
Other languages
Japanese (ja)
Inventor
Koichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55120584A priority Critical patent/JPS5745235A/en
Publication of JPS5745235A publication Critical patent/JPS5745235A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To reduce the time required for X-ray exposure as well as to imprve the accuracy in positioning by a method wherein the surface of a wafer to be exposed is divided into a plurality of rectangular regions having the same shape and a process, wherein a plurality of rectangular regions aparting at least a rectangular region are irradiated by the X-rays, is repeated. CONSTITUTION:The area whereon patterning will be performed on the wafer is divided into square regions A, B, C and D. First, four A regions are exposed by X-rays at the same time, then the four B regions adjoining said A regions are exposed simultaneously and subsequently, regions C and D are exposed in the same manner and the whole surface of the wafer is exposed by the X-rays. An X-ray exposing device is consisted of four X-ray sources 1, 2,... (two sources 1 and 2 only are shown in the diagram), a beryllium window 4 fixed on a retaining frame 5 and a shielding wall 3. When such an X-ray method as abovementioned is adopted, positionary deformed wafer can be correctly positoned in each process of exposure and the area of a region to be exposed by the X-ray irradiation becomes small, thereby enabling to reduce the distance between beryllium window 4 and a mask 6 a nd the attenuation of the X-ray intensity can be inhibited.
JP55120584A 1980-09-02 1980-09-02 Exposure by x-ray Pending JPS5745235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55120584A JPS5745235A (en) 1980-09-02 1980-09-02 Exposure by x-ray

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55120584A JPS5745235A (en) 1980-09-02 1980-09-02 Exposure by x-ray

Publications (1)

Publication Number Publication Date
JPS5745235A true JPS5745235A (en) 1982-03-15

Family

ID=14789888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55120584A Pending JPS5745235A (en) 1980-09-02 1980-09-02 Exposure by x-ray

Country Status (1)

Country Link
JP (1) JPS5745235A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932131A (en) * 1982-08-18 1984-02-21 Nippon Kogaku Kk <Nikon> X-ray exposure transferring method and transferring mask
JPH07209876A (en) * 1995-01-30 1995-08-11 Canon Inc X-ray transfer device and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932131A (en) * 1982-08-18 1984-02-21 Nippon Kogaku Kk <Nikon> X-ray exposure transferring method and transferring mask
JPH0368531B2 (en) * 1982-08-18 1991-10-28 Nippon Kogaku Kk
JPH07209876A (en) * 1995-01-30 1995-08-11 Canon Inc X-ray transfer device and method

Similar Documents

Publication Publication Date Title
DE2860937D1 (en) Method and device for corpuscular ray shadow projection exposure
JPS5745235A (en) Exposure by x-ray
JPS5630129A (en) Manufacture of photomask
JPS5339075A (en) Step and repeat exposure method of masks
JPS5381116A (en) Radiation sensitive polymer and its working method
JPS54141573A (en) Mask for exposure
JPS5215267A (en) Fine processing method
JPS56125830A (en) Uniform exposure patterning method in electron beam patterning device
JPS53147465A (en) Forming method of patterns for lift-off
JPS57206029A (en) Drawing device by electron beam
JPS5442979A (en) Electron beam exposure device
JPS5741637A (en) Microstep tablet
JPS5286778A (en) Mask aligning method for x-ray exposure
JPS57176723A (en) Selectively forming method for pattern
JPS5396678A (en) Method and apparatus for mask pattern exposure
JPS5437685A (en) Electron beam exposure unit
FR2047340A5 (en)
JPS55165631A (en) Manufacture of semiconductor device
JPS5596681A (en) Method of fabricating semiconductor device
GB1319786A (en) Photographic processes
JPS5666037A (en) X-ray mask
JPS53149766A (en) X-ray exposing method
JPS56104439A (en) Electron beam exposing method
JPS53135580A (en) Electron beam exposing method
JPS5766633A (en) Pattern formation of fine processing resist