JPS5745235A - Exposure by x-ray - Google Patents
Exposure by x-rayInfo
- Publication number
- JPS5745235A JPS5745235A JP55120584A JP12058480A JPS5745235A JP S5745235 A JPS5745235 A JP S5745235A JP 55120584 A JP55120584 A JP 55120584A JP 12058480 A JP12058480 A JP 12058480A JP S5745235 A JPS5745235 A JP S5745235A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- exposed
- ray
- wafer
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To reduce the time required for X-ray exposure as well as to imprve the accuracy in positioning by a method wherein the surface of a wafer to be exposed is divided into a plurality of rectangular regions having the same shape and a process, wherein a plurality of rectangular regions aparting at least a rectangular region are irradiated by the X-rays, is repeated. CONSTITUTION:The area whereon patterning will be performed on the wafer is divided into square regions A, B, C and D. First, four A regions are exposed by X-rays at the same time, then the four B regions adjoining said A regions are exposed simultaneously and subsequently, regions C and D are exposed in the same manner and the whole surface of the wafer is exposed by the X-rays. An X-ray exposing device is consisted of four X-ray sources 1, 2,... (two sources 1 and 2 only are shown in the diagram), a beryllium window 4 fixed on a retaining frame 5 and a shielding wall 3. When such an X-ray method as abovementioned is adopted, positionary deformed wafer can be correctly positoned in each process of exposure and the area of a region to be exposed by the X-ray irradiation becomes small, thereby enabling to reduce the distance between beryllium window 4 and a mask 6 a nd the attenuation of the X-ray intensity can be inhibited.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120584A JPS5745235A (en) | 1980-09-02 | 1980-09-02 | Exposure by x-ray |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55120584A JPS5745235A (en) | 1980-09-02 | 1980-09-02 | Exposure by x-ray |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5745235A true JPS5745235A (en) | 1982-03-15 |
Family
ID=14789888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55120584A Pending JPS5745235A (en) | 1980-09-02 | 1980-09-02 | Exposure by x-ray |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5745235A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932131A (en) * | 1982-08-18 | 1984-02-21 | Nippon Kogaku Kk <Nikon> | X-ray exposure transferring method and transferring mask |
JPH07209876A (en) * | 1995-01-30 | 1995-08-11 | Canon Inc | X-ray transfer device and method |
-
1980
- 1980-09-02 JP JP55120584A patent/JPS5745235A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5932131A (en) * | 1982-08-18 | 1984-02-21 | Nippon Kogaku Kk <Nikon> | X-ray exposure transferring method and transferring mask |
JPH0368531B2 (en) * | 1982-08-18 | 1991-10-28 | Nippon Kogaku Kk | |
JPH07209876A (en) * | 1995-01-30 | 1995-08-11 | Canon Inc | X-ray transfer device and method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2860937D1 (en) | Method and device for corpuscular ray shadow projection exposure | |
JPS5745235A (en) | Exposure by x-ray | |
JPS5630129A (en) | Manufacture of photomask | |
JPS5339075A (en) | Step and repeat exposure method of masks | |
JPS5381116A (en) | Radiation sensitive polymer and its working method | |
JPS54141573A (en) | Mask for exposure | |
JPS5215267A (en) | Fine processing method | |
JPS56125830A (en) | Uniform exposure patterning method in electron beam patterning device | |
JPS53147465A (en) | Forming method of patterns for lift-off | |
JPS57206029A (en) | Drawing device by electron beam | |
JPS5442979A (en) | Electron beam exposure device | |
JPS5741637A (en) | Microstep tablet | |
JPS5286778A (en) | Mask aligning method for x-ray exposure | |
JPS57176723A (en) | Selectively forming method for pattern | |
JPS5396678A (en) | Method and apparatus for mask pattern exposure | |
JPS5437685A (en) | Electron beam exposure unit | |
FR2047340A5 (en) | ||
JPS55165631A (en) | Manufacture of semiconductor device | |
JPS5596681A (en) | Method of fabricating semiconductor device | |
GB1319786A (en) | Photographic processes | |
JPS5666037A (en) | X-ray mask | |
JPS53149766A (en) | X-ray exposing method | |
JPS56104439A (en) | Electron beam exposing method | |
JPS53135580A (en) | Electron beam exposing method | |
JPS5766633A (en) | Pattern formation of fine processing resist |