JPS56104439A - Electron beam exposing method - Google Patents

Electron beam exposing method

Info

Publication number
JPS56104439A
JPS56104439A JP733280A JP733280A JPS56104439A JP S56104439 A JPS56104439 A JP S56104439A JP 733280 A JP733280 A JP 733280A JP 733280 A JP733280 A JP 733280A JP S56104439 A JPS56104439 A JP S56104439A
Authority
JP
Japan
Prior art keywords
bits
deflection
low speed
electron beam
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP733280A
Other languages
Japanese (ja)
Other versions
JPS5925371B2 (en
Inventor
Toshihiko Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP733280A priority Critical patent/JPS5925371B2/en
Publication of JPS56104439A publication Critical patent/JPS56104439A/en
Publication of JPS5925371B2 publication Critical patent/JPS5925371B2/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To accelerate the electron beam exposing method by providing low speed large deflection and high speed low deflection deflectors, employing predetermined upper bits of the data of the low speed large deflection D/A converter as position data and fixing the lower bit, and shortening the setting time. CONSTITUTION:In the light deflecting system for the electron beam exposure apparatus, the low speed high deflection deflector 2D is scanned when the beam moves over the mesh region, and the high speed low deflection deflector 3D is scanned when the beam moves in the mesh region. When the beam positioning deflecting amount of the low speed large deflection deflector is decided, the higher figure 11 bits are used as the position data in the mesh region of the 18 bits in resolution of the exposure device with 0.1mum of position accuracy as the data of the D/A converter 2, but the lower figure 7 bits are not used. Thus, the setting ring time can be reduced to several microseconds so as to conduct high speed exposure.
JP733280A 1980-01-24 1980-01-24 Electron beam exposure method Expired JPS5925371B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP733280A JPS5925371B2 (en) 1980-01-24 1980-01-24 Electron beam exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP733280A JPS5925371B2 (en) 1980-01-24 1980-01-24 Electron beam exposure method

Publications (2)

Publication Number Publication Date
JPS56104439A true JPS56104439A (en) 1981-08-20
JPS5925371B2 JPS5925371B2 (en) 1984-06-16

Family

ID=11662994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP733280A Expired JPS5925371B2 (en) 1980-01-24 1980-01-24 Electron beam exposure method

Country Status (1)

Country Link
JP (1) JPS5925371B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7091275B2 (en) * 2019-03-19 2022-06-27 三菱重工業株式会社 Operation policy evaluation device, operation policy evaluation method, and program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0248588A2 (en) * 1986-05-27 1987-12-09 Fujitsu Limited Electron beam exposure system

Also Published As

Publication number Publication date
JPS5925371B2 (en) 1984-06-16

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