JPS54105970A - Electron beam drawing device and its use - Google Patents

Electron beam drawing device and its use

Info

Publication number
JPS54105970A
JPS54105970A JP1231078A JP1231078A JPS54105970A JP S54105970 A JPS54105970 A JP S54105970A JP 1231078 A JP1231078 A JP 1231078A JP 1231078 A JP1231078 A JP 1231078A JP S54105970 A JPS54105970 A JP S54105970A
Authority
JP
Japan
Prior art keywords
signal
fields
electron beam
field
generator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1231078A
Other languages
Japanese (ja)
Inventor
Atsushi Iwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1231078A priority Critical patent/JPS54105970A/en
Publication of JPS54105970A publication Critical patent/JPS54105970A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE:To increase both the resolution and the velocity of the electron beam drawing by dividing the drawing field where the electron beam drawing with the pattern provided to each divided field and then actuating the deflector unit by the control computer memorizing the above patterns to perform the prescribed drawing. CONSTITUTION:The drawing field where the electron beam drawing is performed is divided into split drawing fields 11-15, and patterns 21-24 are distributed to these split fields. Then the original point corresponding to the address information of fields 11-15, the scanning selection sequence information of each drawing field and the pattern drawing method information inside the fields are set and memorized in control computer 8. And control signal f1 sent from computer 8 is applied to logic circuit part 7. After this, indication signal f3 from part 7 is applied to deflecting signal generator 201 as well as to scanning signal generator 301. Then deflecting signal f4 is generated from generator 201 to designate the original point of the drawing field and the scanning selection sequence. Furthermore, scanning signal f5 is generated from generator 301, and signal f4 and f5 are applied to additional amplifier 4 to actuate deflector unit 5 in the form of signal f6. Thus, the drawing is given on base stage 6.
JP1231078A 1978-02-08 1978-02-08 Electron beam drawing device and its use Pending JPS54105970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1231078A JPS54105970A (en) 1978-02-08 1978-02-08 Electron beam drawing device and its use

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1231078A JPS54105970A (en) 1978-02-08 1978-02-08 Electron beam drawing device and its use

Publications (1)

Publication Number Publication Date
JPS54105970A true JPS54105970A (en) 1979-08-20

Family

ID=11801735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1231078A Pending JPS54105970A (en) 1978-02-08 1978-02-08 Electron beam drawing device and its use

Country Status (1)

Country Link
JP (1) JPS54105970A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683032A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing device of electronic beam

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223220A (en) * 1975-08-18 1977-02-22 Toshiba Corp Method of key loading of liquid crystal display type electronic unit a nd integrated circuit
JPS52113168A (en) * 1976-03-19 1977-09-22 Nec Corp Electron beam exposing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223220A (en) * 1975-08-18 1977-02-22 Toshiba Corp Method of key loading of liquid crystal display type electronic unit a nd integrated circuit
JPS52113168A (en) * 1976-03-19 1977-09-22 Nec Corp Electron beam exposing device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683032A (en) * 1979-12-12 1981-07-07 Fujitsu Ltd Exposing device of electronic beam

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