JPS5596681A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS5596681A JPS5596681A JP407979A JP407979A JPS5596681A JP S5596681 A JPS5596681 A JP S5596681A JP 407979 A JP407979 A JP 407979A JP 407979 A JP407979 A JP 407979A JP S5596681 A JPS5596681 A JP S5596681A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- gate
- film
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE: To form a gate oxide film of high purity in an extremely short time by forming the film upon irradiation of laser light to the surface of a semiconductor substrate.
CONSTITUTION: After forming a mask member 3 on the surface of a semiconductor substrate 2 formed with a field oxide film 1, a mask member 3 at the portion corresponding to a region to be formed with an electrode is removed. Then, this substrate 2 is set in an oxide atmosphere, and laser light is irradiated to the surface of the substrate 2 to thereby form a gate oxide film 4. A gate metal 5 is then coated on the surface of the substrate 2. The gate metal 5 coated on the mask member 3 is removed together with the member 3 using an etching solution to thereby provide a semiconductor device which forms a gate electrode of predetermined pattern through the film 4 on the surface of the substrate 1. Thus, a gate oxide film not polluted with impurity is formed for extremely short time.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP407979A JPS5596681A (en) | 1979-01-17 | 1979-01-17 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP407979A JPS5596681A (en) | 1979-01-17 | 1979-01-17 | Method of fabricating semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5596681A true JPS5596681A (en) | 1980-07-23 |
JPS6151432B2 JPS6151432B2 (en) | 1986-11-08 |
Family
ID=11574780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP407979A Granted JPS5596681A (en) | 1979-01-17 | 1979-01-17 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5596681A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60216559A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Formation of oxide film |
JPS6271245A (en) * | 1986-09-12 | 1987-04-01 | Toshiba Corp | Manufacture of semiconductor device |
US6391701B1 (en) | 1999-05-18 | 2002-05-21 | Nec Corporation | Semiconductor device and process of fabrication thereof |
-
1979
- 1979-01-17 JP JP407979A patent/JPS5596681A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60216559A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Formation of oxide film |
JPS6271245A (en) * | 1986-09-12 | 1987-04-01 | Toshiba Corp | Manufacture of semiconductor device |
US6391701B1 (en) | 1999-05-18 | 2002-05-21 | Nec Corporation | Semiconductor device and process of fabrication thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6151432B2 (en) | 1986-11-08 |
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