JPS5240059A - Process for production of semiconductor device - Google Patents
Process for production of semiconductor deviceInfo
- Publication number
- JPS5240059A JPS5240059A JP11588475A JP11588475A JPS5240059A JP S5240059 A JPS5240059 A JP S5240059A JP 11588475 A JP11588475 A JP 11588475A JP 11588475 A JP11588475 A JP 11588475A JP S5240059 A JPS5240059 A JP S5240059A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- deeply
- impurities
- accomplished
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: A process for production of semiconductor devices wherein local heating is accomplished by laser beam so that impurities can be deeply and narrowly diffused into the semiconductor wafer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11588475A JPS5240059A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11588475A JPS5240059A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5240059A true JPS5240059A (en) | 1977-03-28 |
Family
ID=14673555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11588475A Pending JPS5240059A (en) | 1975-09-25 | 1975-09-25 | Process for production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5240059A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228048A (en) * | 1975-08-27 | 1977-03-02 | Hitachi Ltd | Heat transfer device |
JPS55133722U (en) * | 1979-03-16 | 1980-09-22 | ||
JPS5662319A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Impurity dispersion method |
JPS56129336A (en) * | 1980-03-14 | 1981-10-09 | Nec Corp | Method of forming insulative portion in chemical compound semiconductor |
JPS5750428A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Method and apparatus for manufacturing semiconductor device |
JPS57201017A (en) * | 1981-06-04 | 1982-12-09 | Nec Corp | Manufacture of semiconductor device |
JPS60216538A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Diffusing method of impurity to semiconductor substrate |
JPS61144383U (en) * | 1985-02-28 | 1986-09-05 |
-
1975
- 1975-09-25 JP JP11588475A patent/JPS5240059A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228048A (en) * | 1975-08-27 | 1977-03-02 | Hitachi Ltd | Heat transfer device |
JPS5754720B2 (en) * | 1975-08-27 | 1982-11-19 | ||
JPS55133722U (en) * | 1979-03-16 | 1980-09-22 | ||
JPS5662319A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Impurity dispersion method |
JPS6339107B2 (en) * | 1979-10-26 | 1988-08-03 | Hitachi Ltd | |
JPS56129336A (en) * | 1980-03-14 | 1981-10-09 | Nec Corp | Method of forming insulative portion in chemical compound semiconductor |
JPS5750428A (en) * | 1980-09-12 | 1982-03-24 | Nec Corp | Method and apparatus for manufacturing semiconductor device |
JPS57201017A (en) * | 1981-06-04 | 1982-12-09 | Nec Corp | Manufacture of semiconductor device |
JPS60216538A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Diffusing method of impurity to semiconductor substrate |
JPS61144383U (en) * | 1985-02-28 | 1986-09-05 |
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