JPS5662319A - Impurity dispersion method - Google Patents

Impurity dispersion method

Info

Publication number
JPS5662319A
JPS5662319A JP13763279A JP13763279A JPS5662319A JP S5662319 A JPS5662319 A JP S5662319A JP 13763279 A JP13763279 A JP 13763279A JP 13763279 A JP13763279 A JP 13763279A JP S5662319 A JPS5662319 A JP S5662319A
Authority
JP
Japan
Prior art keywords
membrane
impurity
dispersion
substrate
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13763279A
Other languages
Japanese (ja)
Other versions
JPS6339107B2 (en
Inventor
Katsuhiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13763279A priority Critical patent/JPS5662319A/en
Publication of JPS5662319A publication Critical patent/JPS5662319A/en
Publication of JPS6339107B2 publication Critical patent/JPS6339107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent injurious re-dispersion, by making selective radiation of laser beam to heat an impurity layer formed on surface of a substrate. CONSTITUTION:After an SiO2 membrane 21 for a mask is formed on a semiconductor substrate 20 composed of P type silicon, a glass membrane 22 is formed through an opening of the membrane 21. And then, an impurity 22, such as phosphorus, etc., is driven into the glass membrane 22 by the ion driving method. And then, a substrate-adhering section 22A of the membrane 22 is selectively heated by leaser beam to form an N type dispersion region 25. As the heating is done selectively by using laser beam, re-dispersion of the impurity which is doped in advance does not occur, and therefore, variation of electric characteristic can be prevented.
JP13763279A 1979-10-26 1979-10-26 Impurity dispersion method Granted JPS5662319A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13763279A JPS5662319A (en) 1979-10-26 1979-10-26 Impurity dispersion method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13763279A JPS5662319A (en) 1979-10-26 1979-10-26 Impurity dispersion method

Publications (2)

Publication Number Publication Date
JPS5662319A true JPS5662319A (en) 1981-05-28
JPS6339107B2 JPS6339107B2 (en) 1988-08-03

Family

ID=15203178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13763279A Granted JPS5662319A (en) 1979-10-26 1979-10-26 Impurity dispersion method

Country Status (1)

Country Link
JP (1) JPS5662319A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6174377A (en) * 1984-09-20 1986-04-16 Hamamatsu Photonics Kk Manufacture of photosensor under infrared rays

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08
JPS5236468A (en) * 1975-09-18 1977-03-19 Fujitsu Ltd Shallow diffusion method
JPS5240059A (en) * 1975-09-25 1977-03-28 Fujitsu Ltd Process for production of semiconductor device
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4926456A (en) * 1972-07-11 1974-03-08
JPS5236468A (en) * 1975-09-18 1977-03-19 Fujitsu Ltd Shallow diffusion method
JPS5240059A (en) * 1975-09-25 1977-03-28 Fujitsu Ltd Process for production of semiconductor device
JPS5359384A (en) * 1976-09-13 1978-05-29 Texas Instruments Inc Nnchannel mos silicon gate ram cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6174377A (en) * 1984-09-20 1986-04-16 Hamamatsu Photonics Kk Manufacture of photosensor under infrared rays

Also Published As

Publication number Publication date
JPS6339107B2 (en) 1988-08-03

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