JPS5662319A - Impurity dispersion method - Google Patents
Impurity dispersion methodInfo
- Publication number
- JPS5662319A JPS5662319A JP13763279A JP13763279A JPS5662319A JP S5662319 A JPS5662319 A JP S5662319A JP 13763279 A JP13763279 A JP 13763279A JP 13763279 A JP13763279 A JP 13763279A JP S5662319 A JPS5662319 A JP S5662319A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- impurity
- dispersion
- substrate
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000006185 dispersion Substances 0.000 title abstract 4
- 239000012535 impurity Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 239000012528 membrane Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000000266 injurious effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To prevent injurious re-dispersion, by making selective radiation of laser beam to heat an impurity layer formed on surface of a substrate. CONSTITUTION:After an SiO2 membrane 21 for a mask is formed on a semiconductor substrate 20 composed of P type silicon, a glass membrane 22 is formed through an opening of the membrane 21. And then, an impurity 22, such as phosphorus, etc., is driven into the glass membrane 22 by the ion driving method. And then, a substrate-adhering section 22A of the membrane 22 is selectively heated by leaser beam to form an N type dispersion region 25. As the heating is done selectively by using laser beam, re-dispersion of the impurity which is doped in advance does not occur, and therefore, variation of electric characteristic can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13763279A JPS5662319A (en) | 1979-10-26 | 1979-10-26 | Impurity dispersion method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13763279A JPS5662319A (en) | 1979-10-26 | 1979-10-26 | Impurity dispersion method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5662319A true JPS5662319A (en) | 1981-05-28 |
JPS6339107B2 JPS6339107B2 (en) | 1988-08-03 |
Family
ID=15203178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13763279A Granted JPS5662319A (en) | 1979-10-26 | 1979-10-26 | Impurity dispersion method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5662319A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6174377A (en) * | 1984-09-20 | 1986-04-16 | Hamamatsu Photonics Kk | Manufacture of photosensor under infrared rays |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 | ||
JPS5236468A (en) * | 1975-09-18 | 1977-03-19 | Fujitsu Ltd | Shallow diffusion method |
JPS5240059A (en) * | 1975-09-25 | 1977-03-28 | Fujitsu Ltd | Process for production of semiconductor device |
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
-
1979
- 1979-10-26 JP JP13763279A patent/JPS5662319A/en active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4926456A (en) * | 1972-07-11 | 1974-03-08 | ||
JPS5236468A (en) * | 1975-09-18 | 1977-03-19 | Fujitsu Ltd | Shallow diffusion method |
JPS5240059A (en) * | 1975-09-25 | 1977-03-28 | Fujitsu Ltd | Process for production of semiconductor device |
JPS5359384A (en) * | 1976-09-13 | 1978-05-29 | Texas Instruments Inc | Nnchannel mos silicon gate ram cell |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6174377A (en) * | 1984-09-20 | 1986-04-16 | Hamamatsu Photonics Kk | Manufacture of photosensor under infrared rays |
Also Published As
Publication number | Publication date |
---|---|
JPS6339107B2 (en) | 1988-08-03 |
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