JPS5693357A - Manufacture of polycrystalline silicon resistor - Google Patents
Manufacture of polycrystalline silicon resistorInfo
- Publication number
- JPS5693357A JPS5693357A JP17331879A JP17331879A JPS5693357A JP S5693357 A JPS5693357 A JP S5693357A JP 17331879 A JP17331879 A JP 17331879A JP 17331879 A JP17331879 A JP 17331879A JP S5693357 A JPS5693357 A JP S5693357A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- resistance value
- polycrystalline
- worked
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000012790 confirmation Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To increase an accuracy in controlling a resistance value by a method wherein the polycrystalline Si resistor is applied an irradiation of high energy beams of laser, electron beams, white light and the like and annealed after it being worked for a prescribed shape, covered with an insulator and electrodes being taken out of the both ends. CONSTITUTION:An SiO2 film 2 and a polycrystalline Si layer 3 are laminated and cover-attached on a surface of an Si substrate 1 on which a desired semiconductor circuit is provided, and an impurity is worked for the prescribed shape after being doped in the layer 3. Then, the whole surface of the impurity is covered with the SiO2 film 4 and situated at the end of the layer 3 and formed an opening, and electrode wirings 5 in which a material with a high melting point such as W, No, Ti and Ta are fitted at the ends of the layer 3 exposed. Thereafter, since the resistance value of the layer 3 is too high as it stands, YAG laser rays scannings and irradiations are applied to make the resistance value a prescribed value while the resistance value being measured. Thus, a confirmation precedent of the resistance value is easily made due to the application of the anneal treatment after the formation of the electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17331879A JPS5693357A (en) | 1979-12-26 | 1979-12-26 | Manufacture of polycrystalline silicon resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17331879A JPS5693357A (en) | 1979-12-26 | 1979-12-26 | Manufacture of polycrystalline silicon resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5693357A true JPS5693357A (en) | 1981-07-28 |
Family
ID=15958206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17331879A Pending JPS5693357A (en) | 1979-12-26 | 1979-12-26 | Manufacture of polycrystalline silicon resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5693357A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58164135A (en) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | Semiconductor processing device using convergent ion beam |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5313998A (en) * | 1976-07-26 | 1978-02-08 | Fujitsu Ltd | Conveyor of cards |
-
1979
- 1979-12-26 JP JP17331879A patent/JPS5693357A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5313998A (en) * | 1976-07-26 | 1978-02-08 | Fujitsu Ltd | Conveyor of cards |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58164135A (en) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | Semiconductor processing device using convergent ion beam |
| JPS6352429B2 (en) * | 1982-03-25 | 1988-10-19 | Kogyo Gijutsuin |
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