JPS577926A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS577926A
JPS577926A JP8238780A JP8238780A JPS577926A JP S577926 A JPS577926 A JP S577926A JP 8238780 A JP8238780 A JP 8238780A JP 8238780 A JP8238780 A JP 8238780A JP S577926 A JPS577926 A JP S577926A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
amorphous
substrate
highly integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8238780A
Other languages
Japanese (ja)
Inventor
Kunihiko Wada
Hajime Kamioka
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8238780A priority Critical patent/JPS577926A/en
Publication of JPS577926A publication Critical patent/JPS577926A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To form a highly integrated semiconductor device wherein many insulators and semiconductors are layered by forming polycrystal Si or amorphous Si on an insulating film formed on a substrate, and crystallizing said Si by laser annealing. CONSTITUTION:The surface of a polycrystal Si substrate 1 is thermally oxidized and an SiO2 film 2 is formed. Then, amorphous Si is deposited on the SiO2 film 2, and single crystal is obtained by applying laser annealing on a specified part. Thereafter, the amorphous part 1 is converted into an oxide film by thermal oxidization, and the most of the single-crystallized part is formed as a single crystal Si region 3'. In this method, the insulating films and the laser-annealed and single-crystallized semiconductor films are alternately layered, a semiconductor element is formed on said semiconductor film, and the highly integrated semiconductor device can be formed.
JP8238780A 1980-06-18 1980-06-18 Manufacture of semiconductor device Pending JPS577926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8238780A JPS577926A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8238780A JPS577926A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS577926A true JPS577926A (en) 1982-01-16

Family

ID=13773164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8238780A Pending JPS577926A (en) 1980-06-18 1980-06-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS577926A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011783A (en) * 1981-12-28 1991-04-30 Fujitsu Limited Forming selective single crystal regions in insulated pockets formed on silicon by energy beams and devices formed in the pockets
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011783A (en) * 1981-12-28 1991-04-30 Fujitsu Limited Forming selective single crystal regions in insulated pockets formed on silicon by energy beams and devices formed in the pockets
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein

Similar Documents

Publication Publication Date Title
JPS56142630A (en) Manufacture of semiconductor device
JPS55115341A (en) Manufacture of semiconductor device
EP0068094B1 (en) Process for forming a semiconductor device on a silicon ribbon and device thus formed
JPS57155726A (en) Manufacture of semiconductor device
JPS6459866A (en) Manufacture of mos transistor
JPS5688317A (en) Manufacture of semiconductor device
JPS577926A (en) Manufacture of semiconductor device
JPS575328A (en) Growing method for semiconductor crystal
JPS57208124A (en) Manufacture of semiconductor device
JPS57155764A (en) Manufacture of semiconductor device
JPS5687339A (en) Manufacture of semiconductor device
JPS56144530A (en) Manufacture of semiconductor device
JPS56111239A (en) Preparation of semiconductor device
JPS57102053A (en) Semiconductor device
JPS6461952A (en) Semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
JPS57145316A (en) Manufacture of semicondcutor device
JPS57211737A (en) Manufacture of semiconductor substrate
JPS5749224A (en) Semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS56157019A (en) Manufacture of substrate for semiconductor device
JPS5779642A (en) Manufacture of semiconductor device
JPS57180117A (en) Manufacture of semiconductor device
JPS5524459A (en) Selective formation of silicon
JPS567482A (en) Manufacturing of semiconductor device