JPS56138947A - Manufacture of ic memory - Google Patents
Manufacture of ic memoryInfo
- Publication number
- JPS56138947A JPS56138947A JP4175180A JP4175180A JPS56138947A JP S56138947 A JPS56138947 A JP S56138947A JP 4175180 A JP4175180 A JP 4175180A JP 4175180 A JP4175180 A JP 4175180A JP S56138947 A JPS56138947 A JP S56138947A
- Authority
- JP
- Japan
- Prior art keywords
- fusion connection
- layer
- memory
- wire
- wire layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To facilitate the disconnection of a fusion connection of wire layers and improve the reliability of PROM memory formed by melting the wire layers by laser annealing desired fusion connection part of the nondoped wire layers and injecting impurity at the position except the fusion connection. CONSTITUTION:A silicon oxide film 10 is covered on the surface of the memory cell of a substrate, and a polycrystalline Si layer 11 of 4,000Angstrom thick nondoped is formed as a conductive wire layer thereon. Aluminum 13 is covered on the part except desired fusion connection 12 as mask, when Nd:YAG laser light is irradiated to the entire surface, exposed fusion connection is crystallized to increase the grain diameter to 10mum, while the masked wire layer becomes fine crystalline grains of 1,000Angstrom . After removing the aluminum layer, with the film 14 as a mask arsenic ions are injected to the part excpet the fused part. When overcurrent is applied thereto, the fusion connection can be readily disconnected. Thus, the writing error of forming a program can be eliminated to improve the reliability of the memory.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4175180A JPS56138947A (en) | 1980-03-31 | 1980-03-31 | Manufacture of ic memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4175180A JPS56138947A (en) | 1980-03-31 | 1980-03-31 | Manufacture of ic memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56138947A true JPS56138947A (en) | 1981-10-29 |
Family
ID=12617116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4175180A Pending JPS56138947A (en) | 1980-03-31 | 1980-03-31 | Manufacture of ic memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56138947A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63161641A (en) * | 1986-12-25 | 1988-07-05 | Nec Corp | Semiconductor memory device |
| KR100979367B1 (en) * | 2008-03-19 | 2010-08-31 | 주식회사 하이닉스반도체 | Method for forming the fuse of semiconductor device |
| US7923307B2 (en) * | 2007-12-27 | 2011-04-12 | Hynix Semiconductor Inc. | Semiconductor device with fuse and method for fabricating the same |
-
1980
- 1980-03-31 JP JP4175180A patent/JPS56138947A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63161641A (en) * | 1986-12-25 | 1988-07-05 | Nec Corp | Semiconductor memory device |
| US7923307B2 (en) * | 2007-12-27 | 2011-04-12 | Hynix Semiconductor Inc. | Semiconductor device with fuse and method for fabricating the same |
| KR100979367B1 (en) * | 2008-03-19 | 2010-08-31 | 주식회사 하이닉스반도체 | Method for forming the fuse of semiconductor device |
| US8017454B2 (en) | 2008-03-19 | 2011-09-13 | Hynix Semiconductor Inc. | Fuse of semiconductor device and method for forming the same |
| US8324664B2 (en) | 2008-03-19 | 2012-12-04 | Hynix Semiconductor Inc. | Fuse of a semiconductor device |
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