JPS6461963A - Manufacture of solar cell - Google Patents

Manufacture of solar cell

Info

Publication number
JPS6461963A
JPS6461963A JP62219850A JP21985087A JPS6461963A JP S6461963 A JPS6461963 A JP S6461963A JP 62219850 A JP62219850 A JP 62219850A JP 21985087 A JP21985087 A JP 21985087A JP S6461963 A JPS6461963 A JP S6461963A
Authority
JP
Japan
Prior art keywords
layer
amorphous semiconductor
electrodes
electrode
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219850A
Other languages
Japanese (ja)
Inventor
Kazumi Maruyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP62219850A priority Critical patent/JPS6461963A/en
Publication of JPS6461963A publication Critical patent/JPS6461963A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To securely connect a first electrode layer, to a second electrode layer without defective connection even under a condition of strong energy, by applying locally energy to an amorphous semiconductor layer not patterned for crystallization thereof. CONSTITUTION:An insulating substrate 1 includes thereon a line of a plurality of first electrodes 21-23, an amorphous semiconductor layer 3 with which said electrodes are covered, and a second electrode patterns 61-63 on which conductive paste is applied. A laser light 7 directed from the glass plate side is focused on portions on said substrate to be connected to crystallize the amorphous semiconductor layer 3 for formation of good conductive parts 51, 52.... Resins of the conductive pastes 51, 52... are not yet hardened because they are not sintered, and hence allowed to flow into portions 8 of the amorphous layer 3 where the layer is vaporized. Hereby, those resins are brought into direct contact with the first electrode 23. In this situation, the conductive pastes are sintered. Thus, the amorphous semiconductor layers 31, 32... are joined with the second electrodes 41, 42... which are formed by the sintering.
JP62219850A 1987-09-02 1987-09-02 Manufacture of solar cell Pending JPS6461963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219850A JPS6461963A (en) 1987-09-02 1987-09-02 Manufacture of solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219850A JPS6461963A (en) 1987-09-02 1987-09-02 Manufacture of solar cell

Publications (1)

Publication Number Publication Date
JPS6461963A true JPS6461963A (en) 1989-03-08

Family

ID=16742039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219850A Pending JPS6461963A (en) 1987-09-02 1987-09-02 Manufacture of solar cell

Country Status (1)

Country Link
JP (1) JPS6461963A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0422511A2 (en) * 1989-10-07 1991-04-17 Showa Shell Sekiyu Kabushiki Kaisha Photovoltaic device and process for manufacturing the same
EP0763858A3 (en) * 1995-09-11 1998-01-21 Canon Kabushiki Kaisha Photovoltaic element array and method of fabricating the same
WO2009150980A1 (en) * 2008-06-09 2009-12-17 三菱電機株式会社 Thin film photoelectric conversion device and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0422511A2 (en) * 1989-10-07 1991-04-17 Showa Shell Sekiyu Kabushiki Kaisha Photovoltaic device and process for manufacturing the same
EP0422511A3 (en) * 1989-10-07 1991-07-31 Showa Shell Sekiyu Kabushiki Kaisha Photovoltaic device and process for manufacturing the same
US5133809A (en) * 1989-10-07 1992-07-28 Showa Shell Sekiyu K.K. Photovoltaic device and process for manufacturing the same
EP0763858A3 (en) * 1995-09-11 1998-01-21 Canon Kabushiki Kaisha Photovoltaic element array and method of fabricating the same
WO2009150980A1 (en) * 2008-06-09 2009-12-17 三菱電機株式会社 Thin film photoelectric conversion device and method for manufacturing the same
JPWO2009150980A1 (en) * 2008-06-09 2011-11-17 三菱電機株式会社 Thin film photoelectric conversion device and manufacturing method thereof
JP5174900B2 (en) * 2008-06-09 2013-04-03 三菱電機株式会社 Thin film photoelectric conversion device and manufacturing method thereof
US9711669B2 (en) 2008-06-09 2017-07-18 Mitsubishi Electric Corporation Thin-film photoelectric converter

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