JP2598967B2 - Method for manufacturing photovoltaic device - Google Patents
Method for manufacturing photovoltaic deviceInfo
- Publication number
- JP2598967B2 JP2598967B2 JP63144022A JP14402288A JP2598967B2 JP 2598967 B2 JP2598967 B2 JP 2598967B2 JP 63144022 A JP63144022 A JP 63144022A JP 14402288 A JP14402288 A JP 14402288A JP 2598967 B2 JP2598967 B2 JP 2598967B2
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- JP
- Japan
- Prior art keywords
- band
- electrode film
- insulating member
- shaped
- shaped insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は太陽電池等の光起電力装置の製造方法に関す
る。The present invention relates to a method for manufacturing a photovoltaic device such as a solar cell.
（ロ）従来の技術 一般に光起電力装置は、所定の電力を得るため、複数
の光起電力素子を直列接続している。(B) Conventional technology Generally, a photovoltaic device has a plurality of photovoltaic elements connected in series to obtain a predetermined power.
第７図乃至第10図は特開昭62−33477号公報に示され
た従来の光起電力装置の製造方法を示す断面図である。7 to 10 are cross-sectional views showing a method for manufacturing a conventional photovoltaic device disclosed in Japanese Patent Application Laid-Open No. 62-33477.
第７図に示す如く、ガラス等の絶縁性かつ透光性の基
板（11）上に第１電極膜としての透明電極膜を被着した
後、レーザビーム（LB）を照射して紙面垂直方向に分離
溝（ab）を形成することにより、個別の透明電極膜（12
a）（12b）が分離形成される。As shown in FIG. 7, a transparent electrode film as a first electrode film is deposited on an insulating and translucent substrate (11) such as glass, and then irradiated with a laser beam (LB) in a direction perpendicular to the paper surface. By forming a separation groove (ab) in the transparent electrode film (12
a) (12b) is formed separately.
次に、第８図に示す如く、透明電極膜（12a）（12b）
の一側縁近傍に沿って分離溝（ab）に近い側からAgペー
スト等を用いた帯状導電部材（13）及びSiO2ペースト等
を用いた帯状絶縁部材（14）が焼成して並列に形成され
る。Next, as shown in FIG. 8, the transparent electrode films (12a) (12b)
A strip-shaped conductive member (13) using Ag paste and a band-shaped insulating member (14) using SiO 2 paste are formed in parallel by firing from the side near the separation groove (ab) along one side edge Is done.
更に、第９図に示す如く、帯状導電部材（13）、帯状
絶縁部材（14）を含む透明電極膜（12a）（12b）の表
面、並びに分離溝（ab）に露出する基板（11）の表面に
わたる全面にアモルファスシリコン等の半導体光活性層
（15）及び第２電極膜としての金属電極膜（16）を積層
形成する。Further, as shown in FIG. 9, the surface of the transparent electrode films (12a) and (12b) including the strip-shaped conductive member (13) and the strip-shaped insulating member (14), and the substrate (11) exposed to the separation groove (ab). A semiconductor photoactive layer (15) of amorphous silicon or the like and a metal electrode film (16) as a second electrode film are formed on the entire surface over the surface.
最後に、第10図に示す如く、帯状導電部材（13）及び
帯状絶縁部材（14）と対向する位置で半導体光活性層
（15）及び金属電極膜（16）の表面から第１及び第２の
レーザビーム（LB1）（LB2）を照射する。これにより、
帯状導電部材（13）と対向する位置では、金属電極膜
（16）及び半導体光活性層（15）が溶融して帯状導電部
材（13）と当接して電気的に連なり、また、帯状絶縁部
材（14）と対向する位置では、金属電極膜（16）及び半
導体光活性層（15）が除去される。Finally, as shown in FIG. 10, the first and second surfaces of the semiconductor photoactive layer (15) and the metal electrode film (16) are located at positions facing the strip-shaped conductive member (13) and the strip-shaped insulating member (14). Irradiate the laser beams (LB 1 ) and (LB 2 ). This allows
At a position facing the strip-shaped conductive member (13), the metal electrode film (16) and the semiconductor photoactive layer (15) are melted and come into contact with the strip-shaped conductive member (13) to be electrically connected. At the position facing (14), the metal electrode film (16) and the semiconductor photoactive layer (15) are removed.
これによって、隣接する一方の光電変換領域（17a）
の金属電極膜（16a）が帯状導電部材（13）を介して他
方の光電変換領域（17b）の透明電極膜（12b）と接続さ
れ、直列接続された光電変換領域（17a）（17b）が形成
される。As a result, one of the adjacent photoelectric conversion regions (17a)
The metal electrode film (16a) is connected to the transparent electrode film (12b) of the other photoelectric conversion region (17b) via the strip-shaped conductive member (13), and the serially connected photoelectric conversion regions (17a) (17b) It is formed.
（ハ）発明が解決しょうとする課題 ところで、上述の如き方法にあっては、第７図に示す
如くレーザビーム（LB）を用いた透明電極膜（12a）（1
2b）の形成時において、分離溝（ab）内に透明電極膜材
料の飛散物（18）が多数残留する。この飛散物（18）は
帯状導電部材（13）及び帯状絶縁部材（14）の焼成形成
時に軟化して相互に接触し、分離したはずの透明電極膜
（12a）（12b）が電気的に接続させることがあり、特性
低下の要因の１つとなっている。(C) Problems to be Solved by the Invention Incidentally, in the above-described method, as shown in FIG. 7, the transparent electrode film (12a) (1
During the formation of 2b), a large amount of the scattered material (18) of the transparent electrode film material remains in the separation groove (ab). The scattered matter (18) softens during the baking formation of the strip-shaped conductive member (13) and the strip-shaped insulating member (14) and comes into contact with each other, and the separated transparent electrode films (12a) and (12b) are electrically connected. In some cases, which is one of the causes of characteristic deterioration.
（ニ）課題を解決するための手段 本発明による光起電力装置の第１の製造方法は、基板
の絶縁表面に第１の帯状絶縁部材を形成する工程と、こ
の第１の帯状絶縁部材の表面を含んで上記基板の絶縁表
面上に第１電極膜を形成する工程と、上記第１電極膜上
に上記第１の帯状絶縁部材と近接して第２の帯状絶縁部
材及びこれと第１の帯状絶縁部材との間に位置する帯状
導電部材を並列形成する工程と、上記第１電極膜を上記
第１の帯状絶縁部材と対応する位置で分離する工程と、
上記帯状導電部材及び第２の帯状絶縁部材の表面を含ん
で上記第１電極膜の表面に半導体光活性層及び第２電極
膜を積層形成する工程と、上記帯状導電部材と対応する
位置で上記第２電極膜と第１電極膜とを電気的に接続す
ると共に上記第２の帯状絶縁部材と対応する位置で上記
第２電極膜及び半導体光活性層を分離する工程とを備え
たことを特徴とする。(D) Means for Solving the Problems A first manufacturing method of a photovoltaic device according to the present invention comprises a step of forming a first strip-shaped insulating member on an insulating surface of a substrate, and a step of forming the first strip-shaped insulating member. Forming a first electrode film on the insulating surface of the substrate including the surface; and forming a second band-shaped insulating member on the first electrode film in close proximity to the first band-shaped insulating member; Forming a band-shaped conductive member located in parallel with the band-shaped insulating member, and separating the first electrode film at a position corresponding to the first band-shaped insulating member;
Laminating a semiconductor photoactive layer and a second electrode film on the surface of the first electrode film including the surfaces of the band-shaped conductive member and the second band-shaped insulating member; Electrically connecting the second electrode film and the first electrode film and separating the second electrode film and the semiconductor photoactive layer at a position corresponding to the second strip-shaped insulating member. And
また、第２の製造方法は、基板の絶縁表面に第１の帯
状絶縁部材及び帯状導電部材を形成する工程と、これら
第１の帯状絶縁部材及び帯状導電部材の表面を含んで上
記基板の絶縁表面上に第１電極膜を形成する工程と、上
記第１電極膜上に上記帯状導電部材と近接してこれを第
１の帯状絶縁部材と共に挟むように第２の帯状絶縁部材
を形成する工程と、上記第１電極膜を上記第１の帯状絶
縁部材と対応する位置で分離する工程と、上記第２の帯
状絶縁部材の表面を含んで上記第１の電極膜の表面に半
導体光活性層及び第２電極膜を積層形成する工程と、上
記帯状導電部材と対応する位置で上記第２電極膜と第１
電極膜とを電気的に接続すると共に上記第２の帯状絶縁
部材と対応する位置で上記第２電極膜及び半導体光活性
層を分離する工程とを備えたことを特徴とする。Further, a second manufacturing method includes a step of forming a first band-shaped insulating member and a band-shaped conductive member on an insulating surface of the substrate, and a step of insulating the substrate including the surfaces of the first band-shaped insulating member and the band-shaped conductive member. A step of forming a first electrode film on the surface, and a step of forming a second band-shaped insulating member on the first electrode film so as to be close to and sandwich the band-shaped conductive member together with the first band-shaped insulating member. Separating the first electrode film at a position corresponding to the first band-shaped insulating member; and forming a semiconductor photoactive layer on the surface of the first electrode film including the surface of the second band-shaped insulating member. And laminating the second electrode film and forming the second electrode film at a position corresponding to the strip-shaped conductive member.
Electrically connecting the electrode film and separating the second electrode film and the semiconductor photoactive layer at a position corresponding to the second band-shaped insulating member.
（ホ）作用 本発明によれば、第１の帯状絶縁部材が第１電極膜の
分離を容易なものとし、また、第２の帯状絶縁部材は第
２電極膜の分離に際し、第２電極膜と第１電極膜との不
所望な短絡を防止する。(E) Function According to the present invention, the first band-shaped insulating member facilitates separation of the first electrode film, and the second band-shaped insulating member facilitates separation of the second electrode film. And an undesired short circuit between the first electrode film and the first electrode film.
更に、これら帯状絶縁部材及び帯状導電部材は、第１
電極膜の形成に先立って行なわれ、これら部材の熱処理
による悪影響が第１電極膜に及ばない。Further, the strip-shaped insulating member and the strip-shaped conductive member are the first
This is performed prior to the formation of the electrode film, and the heat treatment of these members does not affect the first electrode film.
（ヘ）実 施 例 第１図乃至第５図は本発明の第１の製造方法を工程別
に示す断面図である。(F) Embodiment FIGS. 1 to 5 are sectional views showing the first manufacturing method of the present invention step by step.
第１図に示す工程では、ガラス、耐熱プラスチック等
の基板（１）の表面に第１の帯状絶縁部材（２）が並列
形成される。斯る第１の帯状絶縁部材（２）はSiO2ペー
ストやその他の無機材料ペーストをスクリーン印刷手法
により所定の箇所にパターニングされた後、約550℃の
温度にて焼成される。更に、第１の帯状絶縁部材（２）
の表面を含んで基板（１）の略全面に、SnO2、In2O3、I
TO等の透光性導電酸化物（TCO）から成る第１電極膜
（３）が形成される。In the step shown in FIG. 1, a first band-shaped insulating member (2) is formed in parallel on the surface of a substrate (1) made of glass, heat-resistant plastic or the like. The first belt-shaped insulating member (2) is patterned at a predetermined location by a screen printing technique using an SiO 2 paste or another inorganic material paste, and then fired at a temperature of about 550 ° C. Further, a first band-shaped insulating member (2)
Almost the entire surface of the substrate (1) including the surface of SnO 2 , In 2 O 3 ,
A first electrode film (3) made of a translucent conductive oxide (TCO) such as TO is formed.
第２図に示す工程では、第１電極膜（３）上に、第１
の帯状絶縁部材（２）と近接して第２の帯状絶縁部材
（４）及びこれと第１の帯状絶縁部材（２）との間に位
置する帯状導電部材（５）が並列形成される。第２の帯
状絶縁部材（４）は、上述の第１の帯状絶縁部材（２）
と同様に形成され、また帯状導電部材（５）は、Agペー
ストやその他の金属ペーストから成り、上述のSiO2ペー
ストと同様にスクリーン印刷手法によりパターニングさ
れて約550℃の温度で焼成される。In the step shown in FIG. 2, the first electrode film (3)
The second band-shaped insulating member (4) and the band-shaped conductive member (5) located between the second band-shaped insulating member (4) and the first band-shaped insulating member (2) are formed in parallel with each other. The second band-shaped insulating member (4) is the first band-shaped insulating member (2) described above.
The strip-shaped conductive member (5) is formed of Ag paste or other metal paste, is patterned by a screen printing method like the above-mentioned SiO 2 paste, and is fired at a temperature of about 550 ° C.
第３図に示す工程では、第１の帯状絶縁部材（２）の
表面上に位置する第１電極膜（３）上に第１のレーザビ
ーム（LB1）が照射され、第１電極膜（３）は個別の第
１電極膜（3a）（3b）に分割される。In the step shown in FIG. 3, the first laser beam (LB 1 ) is irradiated on the first electrode film (3) located on the surface of the first strip-shaped insulating member (2), and the first electrode film (LB) is irradiated. 3) is divided into individual first electrode films (3a) and (3b).
第４図に示す工程では、第２の帯状絶縁部材（４）お
よび帯状導電部材（５）を含んで第１電極膜（3a）（3
b）の表面に、内部に膜面に平行なpin、pn接合等の接合
を備えたａ−Sa等のアモルファスシリコン系の半導体光
活性層（６）が形成され、更に、半導体光活性層（６）
上に、Al等の金属から成る第２電極膜（７）が積層形成
される。In the step shown in FIG. 4, the first electrode films (3a) (3) including the second band-shaped insulating member (4) and the band-shaped conductive member (5) are included.
On the surface of b), an amorphous silicon-based semiconductor photoactive layer (6) such as a-Sa having junctions such as pin and pn junctions parallel to the film surface is formed, and further, the semiconductor photoactive layer ( 6)
A second electrode film (7) made of a metal such as Al is laminated thereon.
最後に、第５図に示す工程では、第２の帯状絶縁部材
（４）及び帯状導電部材（５）の表面上に位置する半導
体光活性層（６）及び第２電極膜（７）の積層部分に夫
々適宜のエネルギー密度を有する第２、第３のレーザビ
ーム（LB2）（LB3）が照射される。これによって、第２
の帯状絶縁部材（４）上の積層部分は除去され、半導体
光活性層（６）及び第２電極膜（７）は、夫々個別の半
導体光活性層（6a）（6b）及び第２電極膜（7a）（7b）
に分割される。また、帯状絶縁部材（５）上の積層部分
は溶融して帯状導電部材（５）と当接して電気的に連な
る。Finally, in the step shown in FIG. 5, the lamination of the semiconductor photoactive layer (6) and the second electrode film (7) located on the surface of the second strip-shaped insulating member (4) and the strip-shaped conductive member (5) is performed. The portions are irradiated with second and third laser beams (LB 2 ) and (LB 3 ) each having an appropriate energy density. This allows the second
The laminated portion on the band-shaped insulating member (4) is removed, and the semiconductor photoactive layer (6) and the second electrode film (7) are separated from the semiconductor photoactive layer (6a) (6b) and the second electrode film, respectively. (7a) (7b)
Is divided into Further, the laminated portion on the strip-shaped insulating member (5) is melted and abuts on the strip-shaped conductive member (5) to be electrically connected.
このようにして、半導体光活性層（6a）（6b）及び第
２電極膜（7a）（7b）の分割と共に第２電極膜（7a）と
第１電極膜（3b）との電気的接続が行なわれる。その結
果、隣接する光電変換領域（8a）（8b）が電気的に直列
接続される。In this manner, the semiconductor photoactive layers (6a) (6b) and the second electrode films (7a) (7b) are divided and the electrical connection between the second electrode film (7a) and the first electrode film (3b) is established. Done. As a result, the adjacent photoelectric conversion regions (8a) and (8b) are electrically connected in series.
第６図は本発明の第２の製造方法を説明するための断
面図である。FIG. 6 is a cross-sectional view for explaining the second manufacturing method of the present invention.
斯る製造方法では、帯状導電部材（５）が第１電極膜
（3a）（3b）の形成に先立って第１の帯状絶縁部材
（２）と共に基板（１）上に並列形成される点で、第１
の製造方法と異なる。In such a manufacturing method, the strip-shaped conductive member (5) is formed in parallel with the first strip-shaped insulating member (2) on the substrate (1) prior to the formation of the first electrode films (3a) and (3b). , First
And manufacturing method.
（ト）発明の効果 本発明によれば、第１及び第２の帯状絶縁部材、帯状
導電部材の焼成を第１電極膜のパターニングに先立って
行なうので、パターニングの際に生じる飛散物が第１電
極膜の短絡を招くことはない。(G) Effects of the Invention According to the present invention, the first and second strip-shaped insulating members and the strip-shaped conductive members are baked prior to the patterning of the first electrode film. No short circuit of the electrode film is caused.
また、第２電極膜の分離位置には、第１電極膜との間
に第２の帯状絶縁部材が介在するため、これら電極膜の
短絡は確実に防止される。In addition, since the second strip-shaped insulating member is interposed between the second electrode film and the first electrode film at the separation position, short-circuiting between these electrode films is reliably prevented.
第１図乃至第５図は本発明の第１の製造方法を工程順に
示す断面図、第６図は本発明の第２の製造方法を説明す
るための断面図、第７図乃至第10図は従来の製造方法を
示す断面図である。 （１）……基板、（２）……第１の帯状絶縁部材、（3
a）（3b）……第１電極膜、（４）……第２の帯状絶縁
部材、（５）……帯状導電部材、（6a）（6b）……半導
体光活性層、（7a）（7b）……第２電極膜。1 to 5 are cross-sectional views showing a first manufacturing method of the present invention in the order of steps, FIG. 6 is a cross-sectional view for explaining a second manufacturing method of the present invention, and FIGS. FIG. 2 is a cross-sectional view illustrating a conventional manufacturing method. (1) ... substrate, (2) ... first band-shaped insulating member, (3
a) (3b)... first electrode film, (4)... second band-shaped insulating member, (5)... band-shaped conductive member, (6a) (6b) ... semiconductor photoactive layer, (7a) ( 7b)... Second electrode film.
Claims (2)
成する工程と、この第１の帯状絶縁部材の表面を含んで
上記基板の絶縁表面上に第１電極膜を形成する工程と、
上記第１電極膜上に上記第１の帯状絶縁部材と近接して
第２の帯状絶縁部材及びこれと第１の帯状絶縁部材との
間に位置する帯状導電部材を並列形成する工程と、上記
第１電極膜を上記第１の帯状絶縁部材と対応する位置で
分離する工程と、上記帯状導電部材及び第２の帯状絶縁
部材の表面を含んで上記第１電極膜の表面に半導体光活
性層及び第２電極膜を積層形成する工程と、上記帯状導
電部材と対応する位置で上記第２電極膜と第１電極膜と
を電気的に接続すると共に上記第２の帯状絶縁部材と対
応する位置で上記第２電極膜及び半導体光活性層を分離
する工程とを備えたことを特徴とする光起電力装置の製
造方法。A step of forming a first strip-shaped insulating member on the insulating surface of the substrate; and a step of forming a first electrode film on the insulating surface of the substrate including the surface of the first strip-shaped insulating member. ,
Forming a second band-shaped insulating member in close proximity to the first band-shaped insulating member and a band-shaped conductive member located between the second band-shaped insulating member and the first band-shaped insulating member on the first electrode film; A step of separating the first electrode film at a position corresponding to the first band-shaped insulating member; and a step of forming a semiconductor photoactive layer on the surface of the first electrode film including the surfaces of the band-shaped conductive member and the second band-shaped insulating member. And a step of laminating and forming a second electrode film, and electrically connecting the second electrode film and the first electrode film at a position corresponding to the band-shaped conductive member and a position corresponding to the second band-shaped insulating member. And a step of separating the second electrode film and the semiconductor photoactive layer.
帯状導電部材を形成する工程と、これら第１の帯状絶縁
部材及び帯状導電部材の表面を含んで上記基板の絶縁表
面上に第１電極膜を形成する工程と、上記第１電極膜上
に上記帯状導電部材と近接してこれを第１の帯状絶縁部
材と共に挟むように第２の帯状絶縁部材を形成する工程
と、上記第１電極膜を上記第１の帯状絶縁部材と対応す
る位置で分離する工程と、上記第２の帯状絶縁部材の表
面を含んで上記第１電極膜の表面に半導体光活性層及び
第２電極膜を積層形成する工程と、上記帯状導電部材と
対応する位置で上記第２電極膜と第１電極膜とを電気的
に接続すると共に上記第２の帯状絶縁部材と対応する位
置で上記第２電極膜及び半導体光活性層を分離する工程
とを備えたことを特徴とする光起電力装置の製造方法。A step of forming a first band-shaped insulating member and a band-shaped conductive member on an insulating surface of the substrate; and a step of forming a first band-shaped insulating member and a band-shaped conductive member on the insulating surface of the substrate including the surfaces of the first band-shaped insulating member and the band-shaped conductive member. A step of forming one electrode film; a step of forming a second band-shaped insulating member on the first electrode film so as to be close to and sandwich the band-shaped conductive member together with the first band-shaped insulating member; Separating the one electrode film at a position corresponding to the first band-shaped insulating member; and forming a semiconductor photoactive layer and a second electrode film on the surface of the first electrode film including the surface of the second band-shaped insulating member. And electrically connecting the second electrode film and the first electrode film at a position corresponding to the band-shaped conductive member, and forming the second electrode at a position corresponding to the second band-shaped insulating member. Separating the film and the semiconductor photoactive layer. Method for manufacturing a photovoltaic device according to symptoms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63144022A JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63144022A JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH021992A JPH021992A (en) | 1990-01-08 |
| JP2598967B2 true JP2598967B2 (en) | 1997-04-09 |
Family
ID=15352505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63144022A Expired - Fee Related JP2598967B2 (en) | 1988-06-10 | 1988-06-10 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2598967B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2648037B2 (en) * | 1990-04-05 | 1997-08-27 | 三洋電機株式会社 | Method for manufacturing photovoltaic device |
| WO1991017572A1 (en) * | 1990-05-07 | 1991-11-14 | Canon Kabushiki Kaisha | Solar cell |
| JP2805394B2 (en) * | 1990-05-07 | 1998-09-30 | キヤノン株式会社 | Solar cell |
| EP2743993B1 (en) * | 2009-03-31 | 2015-07-15 | LG Innotek Co., Ltd. | Solar cell |
-
1988
- 1988-06-10 JP JP63144022A patent/JP2598967B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH021992A (en) | 1990-01-08 |
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