JP2798772B2 - Method for manufacturing photovoltaic device - Google Patents
Method for manufacturing photovoltaic deviceInfo
- Publication number
- JP2798772B2 JP2798772B2 JP2047938A JP4793890A JP2798772B2 JP 2798772 B2 JP2798772 B2 JP 2798772B2 JP 2047938 A JP2047938 A JP 2047938A JP 4793890 A JP4793890 A JP 4793890A JP 2798772 B2 JP2798772 B2 JP 2798772B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- groove
- forming
- film
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、複数の光起電力素子を電気的に直列接続し
た集積型の光起電力装置の製造方法に関する。The present invention relates to a method for manufacturing an integrated photovoltaic device in which a plurality of photovoltaic elements are electrically connected in series.
（ロ）従来の技術 集積型光起電力装置は、所定の光起電力を得るため、
複数の光起電力素子を電気的に直列接続した状態で絶縁
基板上に形成している。この光起電力装置においては、
電気的に直列接続している部分に生じる発電無効領域を
できるだけ小さくすること、及び製造構成を容易にする
こと等を目的として、光起電力素子の直列接続及び基板
上への分割配置のために、レーザビーム等のエネルギー
ビームを用いる方法が提案されている。(B) Conventional technology An integrated photovoltaic device is used to obtain a predetermined photovoltaic power.
A plurality of photovoltaic elements are formed on an insulating substrate in a state of being electrically connected in series. In this photovoltaic device,
For the purpose of minimizing the power generation invalid area generated in the part electrically connected in series, and facilitating the manufacturing configuration, for the purpose of series connection of the photovoltaic elements and divisional arrangement on the substrate. A method using an energy beam such as a laser beam has been proposed.
エネルギービームを用いた光起電力装置の製造方法の
一方法が、『機能材料』の1985年３月号に「太陽電池と
レーザ加工」として示されている。One method of manufacturing a photovoltaic device using an energy beam is described as “Solar Cell and Laser Processing” in the March 1985 issue of “Functional Materials”.
第３図はこの方法により製造される光起電力装置の断
面図を示し、この装置の製造方法は、まず、ガラス、耐
熱プラスチック等の透明基板20のほぼ全面に、一連状の
透明電極膜21a、21bを形成した後、これにレーザビーム
等のエネルギービームを照射することにより、第１分割
溝21abを隔てて分割配置された複数の透明電極膜21a、2
1bを形成する。FIG. 3 is a cross-sectional view of a photovoltaic device manufactured by this method. First, a series of transparent electrode films 21a are formed on almost the entire surface of a transparent substrate 20 such as glass or heat-resistant plastic. , 21b, and by irradiating them with an energy beam such as a laser beam, a plurality of transparent electrode films 21a, 21 divided and arranged via the first division groove 21ab.
Form 1b.
次に、透明電極膜21a、21bを含んで基板20のほぼ全面
に、非晶質シリコン等の非晶質半導体からなる一連状の
半導体光活性層22a、22bを形成し、透明電極膜21a、21b
の第１分割溝21abの一方の側（図においては右側）に沿
って、エネルギービームを照射して第２分割溝22abを隔
てて半導体光活性層22a、22bを形成する。Next, on substantially the entire surface of the substrate 20 including the transparent electrode films 21a and 21b, a series of semiconductor photoactive layers 22a and 22b made of an amorphous semiconductor such as amorphous silicon are formed, and the transparent electrode films 21a and 22b are formed. 21b
An energy beam is irradiated along one side (the right side in the figure) of the first division groove 21ab to form semiconductor photoactive layers 22a and 22b across the second division groove 22ab.
最後に、半導体光活性層22a、22bの第２分割光22abを
含んで、これらの上に一連状の裏面電極膜23a、23bを形
成し、半導体光活性層22a、22bの一方の側に（図におい
て右側）に沿ってエネルギービームを照射することによ
り、第３分割溝23abより隔てられた複数の裏面電極膜23
a、23bが形成される。Lastly, a series of back electrode films 23a and 23b are formed on the semiconductor photoactive layers 22a and 22b, including the second split light 22ab, and the semiconductor photoactive layers 22a and 22b are formed with one side ( By irradiating an energy beam along the right side in the figure), a plurality of back electrode films 23 separated from the third divisional groove 23ab are formed.
a and 23b are formed.
以上によって、裏面電極膜23aと透明電極膜21bとが電
気的に接続され、電気的に直列接続された光起電力素子
24a、24bが形成される。As described above, the back electrode film 23a and the transparent electrode film 21b are electrically connected, and the photovoltaic element electrically connected in series
24a and 24b are formed.
（ハ）発明が解決しようとする課題 ところで、上述の方法によれば、発電に寄与しない無
効領域、即ち、各光起電力素子24a、24bの隣接間隔部24
abは、エネルギービームの使用によりある程度小さくな
るものの、各分割溝21ab、22ab、23abの幅をｄ及び各間
隔間の距離をαとすると、隣接間隔部24abの幅は、3d＋
２αとなり、まだ十分に小さくなっているとは言い難
い。(C) Problems to be Solved by the Invention According to the above-described method, the ineffective region that does not contribute to power generation, that is, the adjacent space 24 between the photovoltaic elements 24a and 24b
Although ab is reduced to some extent by the use of the energy beam, if the width of each of the divided grooves 21ab, 22ab, and 23ab is d and the distance between the respective spaces is α, the width of the adjacent space 24ab is 3d +
2α, and it is hard to say that it is still sufficiently small.
そこで、本発明は、この隣接間隔部の幅をさらに小さ
くして、有効受光面積を拡大し光起電力装置の出力を向
上させることにある。Therefore, the present invention is to further reduce the width of the adjacent space portion, enlarge the effective light receiving area, and improve the output of the photovoltaic device.
（ニ）課題を解決するための手段 本発明は、基板の絶縁表面上に、第１電極膜、半導体
光活性層及び第２電極膜をこの順序に積層してなる光起
電力素子を、複数個電気的に直列接続して配した光起電
力装置の製造方法において、 上記基板の絶縁表面上に一連状の第１電極膜、半導体
光活性層及び第２電極膜を順次積層形成する工程と、 上記一連状の第１電極膜、半導体光活性層及び第２電
極膜に第１分割溝を形成して上記光起電力素子毎の第１
電極膜、半導体光活性層及び第２電極膜に分割すると共
に、上記第１分割溝の一方に当隣接して上記第２電極膜
に第２分割溝を形成する工程と、 上記第１分割溝及び第２分割溝を含む上記第２電極膜
上に、上記第１分割溝の他方に隣接する第３分割溝を有
した絶縁膜を形成する工程と、 上記第１分割溝と上記第２分割溝との間に、少なくと
も第２電極膜及び半導体光活性層まで延びる第４分割溝
を形成する工程と、 上記絶縁膜上に、隣接する上記第３分割溝及び第４分
割溝の夫々から露出する第２電極膜及び第１電極膜を、
電気的に接続する接続電極膜を形成する工程と、 を備えたことを特徴とする。(D) Means for Solving the Problems The present invention provides a plurality of photovoltaic elements each having a first electrode film, a semiconductor photoactive layer, and a second electrode film laminated in this order on an insulating surface of a substrate. A method of manufacturing a photovoltaic device electrically connected in series, comprising: sequentially forming a series of a first electrode film, a semiconductor photoactive layer, and a second electrode film on an insulating surface of the substrate; Forming a first division groove in the series of the first electrode film, the semiconductor photoactive layer and the second electrode film to form a first divisional groove for each of the photovoltaic elements;
Dividing the electrode film, the semiconductor photoactive layer and the second electrode film, and forming a second division groove in the second electrode film adjacent to one of the first division grooves; Forming an insulating film having a third divisional groove adjacent to the other of the first divisional groove on the second electrode film including the second divisional groove, and the first divisional groove and the second divisional Forming a fourth division groove extending at least to the second electrode film and the semiconductor photoactive layer between the groove and the groove; and exposing the third division groove and the fourth division groove adjacent to each other on the insulating film. The second electrode film and the first electrode film
Forming a connection electrode film for electrical connection.
（ホ）作用 本発明によれば、各光起電力素子は第１分割溝により
分離され、そして隣接する光起電力素子は第３分割溝及
び第４分割溝に拡がる接続電力膜により、電気的に直列
接続される。(E) Function According to the present invention, each photovoltaic element is separated by the first division groove, and the adjacent photovoltaic elements are electrically connected by the connection power film extending to the third division groove and the fourth division groove. Are connected in series.
（ヘ）実施例 第１図（ａ）乃至（ｅ）は本発明の製造方法を工程順
に示す断面図である。(F) Example FIGS. 1A to 1E are cross-sectional views showing a manufacturing method of the present invention in the order of steps.
同図（ａ）において、ガラス、耐熱性プラスチック等
の透明基板１上に、ITO大SnO2等の透光性導電酸化物か
らなる透明電極膜２、非晶質シリコン等の非晶質半導体
からなる半導体光活性層３及びAg、Al等の金属からなる
裏面電極膜４がこの順に積層形成される。In FIG. 1A, a transparent electrode film 2 made of a light-transmitting conductive oxide such as ITO large SnO 2 and an amorphous semiconductor such as amorphous silicon are formed on a transparent substrate 1 such as glass or heat-resistant plastic. A semiconductor photoactive layer 3 and a back electrode film 4 made of a metal such as Ag and Al are laminated in this order.
同図（ｂ）において、裏面電極膜４上からレーザビー
ム等のエネルギービームを照射することにより、幅ｄ
（約200μｍ）の第１分割溝５が形成され、複数に分割
された透明電極膜2a、2b、半導体光活性層3a、3b及び裏
面電極膜4a、4bが形成される。In FIG. 2B, by irradiating an energy beam such as a laser beam from above the back electrode film 4, the width d is increased.
A first dividing groove 5 (about 200 μm) is formed, and a plurality of divided transparent electrode films 2a and 2b, semiconductor photoactive layers 3a and 3b, and back electrode films 4a and 4b are formed.
また、裏面電極膜4bには、第１分割溝５に隣接し、こ
の溝５から幅α（約50μｍ）を隔てて、幅ｄ（約200μ
ｍ）の第２分割溝６が形成される。The back electrode film 4b is adjacent to the first dividing groove 5 and has a width d (about 200 μm) separated from the groove 5 by a width α (about 50 μm).
m) The second division groove 6 is formed.
同図（ｃ）において、第１分割溝５及び第２分割溝６
を含む裏面電極膜4a、4b上に、第１分割溝５の左隣に隣
接する第３分割溝７を有した絶縁膜８が形成される。こ
の絶縁膜８は、SiO2、Al2O3またはTiO2等の無機系薄膜
やポリイミド等の樹脂系薄膜からなる。In FIG. 3C, the first divided groove 5 and the second divided groove 6
Is formed on the back surface electrode films 4a and 4b including the third divisional groove 7 adjacent to the left of the first divisional groove 5. The insulating film 8 is made of an inorganic thin film such as SiO 2 , Al 2 O 3 or TiO 2 or a resin thin film such as polyimide.
同図（ｄ）において、第１分割溝５と第２分割溝６と
の間に、絶縁膜８上からレーザビーム等のエネルギービ
ームを照射することにより、第２電極膜2a、2b、半導体
光活性層3a、3b及び裏面電極膜4a、4bを分割する幅ｄ
（約200μｍ）の第４分割溝９が形成される。In FIG. 3D, by irradiating an energy beam such as a laser beam from above the insulating film 8 between the first dividing groove 5 and the second dividing groove 6, the second electrode films 2a and 2b and the semiconductor light are irradiated. The width d for dividing the active layers 3a and 3b and the back electrode films 4a and 4b
The fourth division groove 9 (about 200 μm) is formed.
最後に、同図（ｅ）において、絶縁膜８上に、第３分
割溝７及び第４分割溝９の夫々から露出する裏面電極膜
4a及び透明電極膜2bを電気的に接続するべく、Ag、Al、
Tiや導電ペースト等の接続電極膜10が、蒸着法やスクリ
ーン印刷手法等により形成される。Finally, in FIG. 3E, the back electrode film exposed from each of the third division groove 7 and the fourth division groove 9 is formed on the insulating film 8.
In order to electrically connect 4a and the transparent electrode film 2b, Ag, Al,
The connection electrode film 10 such as Ti or conductive paste is formed by an evaporation method, a screen printing method, or the like.
これにより、裏面電極膜4aと透明電極膜2bとは、第３
分割溝７から第４分割溝９まで延びる接続電極膜10によ
り電気的に接続され、直列接続された複数の光起電力素
子11a、11bが形成される。As a result, the back electrode film 4a and the transparent electrode film 2b
A plurality of photovoltaic elements 11a and 11b which are electrically connected by a connection electrode film 10 extending from the dividing groove 7 to the fourth dividing groove 9 and connected in series are formed.
以上の方法によれば、光起電力素子11a、11bの隣接間
隔部11abの幅は、第１分割溝５、第２分割溝６及びこれ
ら分割溝の間の距離の合計2d＋αとなり、従来の3d＋２
αに比してｄ＋α分小さくなる。これにより、５インチ
角の基板上に15個の光起電力素子を配した装置におい
て、従来の構造での有効面積が88％であったものが、本
発明では93％に向上し、その結果、出力は従来と比べて
約５％向上した。According to the above method, the width of the adjacent space 11ab between the photovoltaic elements 11a and 11b is 2d + α, which is the sum of the first divided groove 5, the second divided groove 6, and the distance between these divided grooves.
It is smaller by d + α than α. As a result, in a device in which 15 photovoltaic elements are arranged on a 5-inch square substrate, the effective area of the conventional structure is 88%, but the present invention is improved to 93%. As a result, The output was improved by about 5% as compared with the conventional one.
ところで、上記実施例において、接続電極膜10と透明
電極膜2bとは、高々膜厚0.2μｍ程度の透明電極膜2bの
側面にて電気的に接続されているだけである。従って、
この部分での接続抵抗が高くなってしまう可能性があ
る。By the way, in the above embodiment, the connection electrode film 10 and the transparent electrode film 2b are only electrically connected at the side surfaces of the transparent electrode film 2b having a thickness of at most about 0.2 μm. Therefore,
There is a possibility that the connection resistance at this portion will increase.
そこで、第１図（ｄ）の工程において、第４分離溝９
を形成した後、この溝９内にドライエッチング処理を施
し、透明電極膜2bの側面にクリーンな状態とすることが
望ましい。Therefore, in the step of FIG.
After the formation, a dry etching process is preferably performed in the groove 9 to make the side surface of the transparent electrode film 2b clean.
あるいは、第２図に示すように、第１図（ｄ）の工程
において、第４分離溝９を、絶縁膜８、裏面電極膜4b及
び半導体光活性層3bまで延び、透明電極膜4bの上面を幅
約100μｍにわたって露出させるように形成するのが好
ましい。この構成によって、接続電極膜11は透明電極膜
4bと十分に接触するようにしても良い。Alternatively, as shown in FIG. 2, in the step of FIG. 1D, the fourth separation groove 9 extends to the insulating film 8, the back electrode film 4b and the semiconductor photoactive layer 3b, and the upper surface of the transparent electrode film 4b Is preferably formed so as to be exposed over a width of about 100 μm. With this configuration, the connection electrode film 11 becomes a transparent electrode film.
You may make it contact 4b sufficiently.
（ト）発明の効果 本発明方法によれば、光起電力装置の発電無効領域で
ある光起電力素子の隣接間隔部の大きさを小さくして有
効受光面積を拡大することができ、光起電力装置の出力
を向上させることができる。(G) Effects of the Invention According to the method of the present invention, it is possible to increase the effective light receiving area by reducing the size of the space between adjacent photovoltaic elements, which is the power generation ineffective area of the photovoltaic device. The output of the power device can be improved.
第１図（ａ）乃至（ｅ）は本発明の製造方法を工程順に
示す断面図、第２図は本発明の異なる製造方法の一部を
示す断面図、第３図は従来の方法により製造された光起
電力装置を示す断面図である。1 (a) to 1 (e) are cross-sectional views showing a manufacturing method of the present invention in the order of steps, FIG. 2 is a cross-sectional view showing a part of a different manufacturing method of the present invention, and FIG. FIG. 4 is a cross-sectional view showing a photovoltaic device that has been used.
Claims (1)
光活性層及び第２電極膜をこの順序に積層してなる光起
電力素子を、複数個電気的に直列接続して配した光起電
力装置の製造方法において、 上記基板の絶縁表面上に一連状の第１電極膜、半導体光
活性層及び第２電極膜を順次積層形成する工程と、 上記一連状の第１電極膜、半導体光活性層及び第２電極
膜に第１分割溝を形成して上記光起電力素子毎の第１電
極膜、半導体光活性層及び第２電極膜に分割すると共
に、上記第１分割溝の一方に隣接して上記第２電極膜に
第２分割溝を形成する工程と、 上記第１分割溝及び第２分割溝を含む上記第２電極膜上
に、上記第１分割溝の他方に隣接する第３分割溝を有し
た絶縁膜を形成する工程と、 上記第１分割溝と上記第２分割溝との間に、少なくとも
第２電極膜及び半導体光活性層まで延びる第４分割溝を
形成する工程と、 上記絶縁膜上に、隣接する上記第３分割溝及び第４分割
溝の夫々から露出する第２電極膜及び第１電極膜を、電
気的に接続する接続電極膜を形成する工程と、 を備えたことを特徴とする光起電極装置の製造方法。1. A plurality of photovoltaic elements each having a first electrode film, a semiconductor photoactive layer, and a second electrode film laminated in this order on an insulating surface of a substrate and electrically connected in series. A method of manufacturing a photovoltaic device, comprising: sequentially forming a series of first electrode films, a semiconductor photoactive layer, and a second electrode film on an insulating surface of the substrate; and forming the series of first electrode films. Forming a first division groove in the semiconductor photoactive layer and the second electrode film to divide the photovoltaic element into a first electrode film, a semiconductor photoactive layer, and a second electrode film; Forming a second dividing groove in the second electrode film adjacent to one of the first and second dividing grooves; and forming the second dividing groove on the second electrode film including the first and second dividing grooves. Forming an insulating film having an adjacent third divisional groove; and between the first divisional groove and the second divisional groove. Forming a fourth division groove extending at least to the second electrode film and the semiconductor photoactive layer; and a second electrode film exposed from the adjacent third division groove and fourth division groove on the insulating film; Forming a connection electrode film for electrically connecting the first electrode film to the first electrode film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2047938A JP2798772B2 (en) | 1990-02-28 | 1990-02-28 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2047938A JP2798772B2 (en) | 1990-02-28 | 1990-02-28 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03250771A JPH03250771A (en) | 1991-11-08 |
| JP2798772B2 true JP2798772B2 (en) | 1998-09-17 |
Family
ID=12789317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2047938A Expired - Fee Related JP2798772B2 (en) | 1990-02-28 | 1990-02-28 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2798772B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3360919B2 (en) * | 1993-06-11 | 2003-01-07 | 三菱電機株式会社 | Method of manufacturing thin-film solar cell and thin-film solar cell |
| US20070079866A1 (en) * | 2005-10-07 | 2007-04-12 | Applied Materials, Inc. | System and method for making an improved thin film solar cell interconnect |
| TW200826310A (en) * | 2006-08-22 | 2008-06-16 | Newsouth Innovations Pty Ltd | Thin-film solar module |
| JP2012119343A (en) * | 2009-03-31 | 2012-06-21 | Shibaura Mechatronics Corp | Solar battery manufacturing method, solar battery manufacturing apparatus, and solar battery |
-
1990
- 1990-02-28 JP JP2047938A patent/JP2798772B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03250771A (en) | 1991-11-08 |
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