JPH03250771A - Manufacture of photovoltaic device - Google Patents

Manufacture of photovoltaic device

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Publication number
JPH03250771A
JPH03250771A JP2047938A JP4793890A JPH03250771A JP H03250771 A JPH03250771 A JP H03250771A JP 2047938 A JP2047938 A JP 2047938A JP 4793890 A JP4793890 A JP 4793890A JP H03250771 A JPH03250771 A JP H03250771A
Authority
JP
Japan
Prior art keywords
electrode film
dividing groove
groove
film
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2047938A
Other languages
Japanese (ja)
Other versions
JP2798772B2 (en
Inventor
Takashi Shibuya
澁谷 尚
Yasunori Suzuki
康則 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2047938A priority Critical patent/JP2798772B2/en
Publication of JPH03250771A publication Critical patent/JPH03250771A/en
Application granted granted Critical
Publication of JP2798772B2 publication Critical patent/JP2798772B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To make small the width of the adjacent interval parts between photovoltaic element, to enlarge the effective light-receiving areas of the elements and to contrive to improve the output of a device by a method wherein the individual elements are divided by a first divided groove and the photovoltaic elements adjacent to the first divided groove and a second divided groove are electrically connected in series by a connection electrode film spreading in third and fourth divided grooves. CONSTITUTION:A first divided groove 5 is formed in a first electrode film 2, a semiconductor photoactive layer 3 and a second electrode film 4, which are laminated and formed on the insulating surface of a substrate 1, and photovoltaic elements are divided. An insulating film 8 having a third divided groove 7 adjacent to the other side of the groove 5 is formed on the film 4 including the groove 5 and a second divided groove 6. Then, a fourth divided groove 9 is formed between the grooves 5 and 6. A connection electrode film 10 to connect to the films 4 and 2, which are exposed through the respective grooves of the adjacent grooves 7 and 9, is formed on this film 8. Thereby, the adjacent intervals between the elements are made small, the effective light-receiving areas of the elements are enlarged and the output of a device can be increased.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は、複数の光起電力素子を電気的に直列接続した
集積型の光起電力装置の製造方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a method for manufacturing an integrated photovoltaic device in which a plurality of photovoltaic elements are electrically connected in series.

(ロ)従来の技術 集積型光起電力装置は、所定の光起電力を得るため、複
数の光起電力素子を電気的に直列接続した状態で絶縁基
板上に形成している。この光起電力装置においては、電
気的に直列接続している部分に生じる発を無効領域をで
きるだけ小さくすること、及び製造工程を容易にするこ
と等を目的として、光起電力素子の直列接続及び基板上
への分割配置のために、レーザビーム等のエネルギービ
ームを用いる方法が提案されている。
(b) In order to obtain a predetermined photovoltaic force, a conventional technology-integrated photovoltaic device has a plurality of photovoltaic elements electrically connected in series and formed on an insulating substrate. In this photovoltaic device, the photovoltaic elements are connected in series and A method using an energy beam such as a laser beam has been proposed for dividing and arranging on a substrate.

エネルギービームを用いた光起電力装置の製造方法の一
方法が、7機能材料」の1985年3月号に「太陽電池
とレーザ加工」として示されている。
One method of manufacturing a photovoltaic device using an energy beam is described in the March 1985 issue of ``7 Functional Materials'' as ``Solar Cells and Laser Processing.''

第3図はこの方法により製造される光起電力装置の断面
図を示し、この装置の製造方法は、まず、ガラス、耐熱
プラスチック等の透明基板20のほぼ全面に、一連状の
透明電極膜21a、21bを形成した後、これにレーザ
ビーム等のエネルギービームを照射することにより、第
1分割溝21abを隔てて分割配置された複数の透明電
極膜21a、21bを形成する。
FIG. 3 shows a cross-sectional view of a photovoltaic device manufactured by this method. First, a series of transparent electrode films 21a are formed on almost the entire surface of a transparent substrate 20 made of glass, heat-resistant plastic, etc. , 21b are formed, and then an energy beam such as a laser beam is irradiated thereon to form a plurality of transparent electrode films 21a and 21b that are divided and arranged with the first dividing groove 21ab in between.

次に、透明電極膜21a、21bを含んで基板20のほ
ぼ全面に、非晶質シリコン等の非晶質半導体からなる一
連状の半導体光活性層22a、22B)を形成し、透明
電極膜21a、21bの第1分割溝21abの一方の側
(図においては右側)に沿って、エネルギービームを照
射して第2分割溝22abを隔てて半導体光活性層22
a、22bを形成する。
Next, a series of semiconductor photoactive layers 22a, 22B made of an amorphous semiconductor such as amorphous silicon is formed on almost the entire surface of the substrate 20, including the transparent electrode films 21a and 21b. , 21b along one side (the right side in the figure) of the first dividing groove 21ab, the semiconductor photoactive layer 22 is irradiated with an energy beam across the second dividing groove 22ab.
a, 22b are formed.

最後に、半導体光活性層22a、221)の第2分割溝
22abを含んで、これらの−トに一連状の裏面電極膜
23a、23bを形成し、半導体光活性層22a、22
bの一方の側に(図において右側)に沿ってエネルギー
ビームを照射することにより、第3分割溝23abによ
り隔てられた複数の裏面電極膜23a、23bが形成さ
れる。
Finally, a series of back electrode films 23a and 23b are formed on these layers including the second dividing grooves 22ab of the semiconductor photoactive layers 22a and 221).
A plurality of back electrode films 23a and 23b separated by the third dividing groove 23ab are formed by irradiating an energy beam along one side (the right side in the figure) of b.

以上によって、裏面電極膜23aと透明電極膜2 ]、
 bとが電気的に接続され、電気的に直列接続された光
起電力素子24a、24bが形成される。
By the above, the back electrode film 23a and the transparent electrode film 2 ],
b are electrically connected to form photovoltaic elements 24a and 24b electrically connected in series.

(ハ)発明が解決しようとする課題 ところで、上述の方法によれば、発電に寄与しない無効
領域、即ち、各光起電力素子24a、24bの隣接間隔
部24abは、エネルギービームの使用によりある程度
小さくなるものの、各分割溝21ab、22ab、23
abの幅をd及び各間隔間の距離をaとすると、隣接間
隔部24abの幅は、3d+2tとなり、まだ十分に小
さくなっているとは言い難い。
(C) Problems to be Solved by the Invention By the way, according to the above method, the ineffective region that does not contribute to power generation, that is, the adjacent spacing portion 24ab of each photovoltaic element 24a, 24b, is reduced to some extent by the use of an energy beam. However, each dividing groove 21ab, 22ab, 23
Assuming that the width of ab is d and the distance between each interval is a, the width of the adjacent interval portion 24ab is 3d+2t, which is still not sufficiently small.

そこで、本発明は、この隣接間隔部の幅をさらに小さく
して、有効受光面積を拡大し光起電力装置の出力を向上
させることにある。
Therefore, an object of the present invention is to further reduce the width of the adjacent spaced portions to expand the effective light-receiving area and improve the output of the photovoltaic device.

(ニ)課題を解決するための手段 本発明は、基板の絶縁表面上に、第1′14極膜、半導
体光活性層及び第2電極膜をこの順序に積層してなる光
起電力素子を、複数個電気的に直列接続して配した光起
電力装置の製造方法において、上記基板の絶縁表面上に
一連状の第1電極膜、半導体光活性層及び第2電極膜を
順次積層形成する]二程と、 上記一連状の第電極膜、半導体光活性層及び第2電極膜
に第1分割溝を形成して上記光起電力素子毎の第1i電
極膜、半導体光活性層及び第2電極膜に分割すると共に
、上記第1分割溝の一方に隣接して上記第2電極膜に第
2分割溝を形成する工程と、 上記第1分割溝及び第2分割溝を含む上記第2電極膜上
に、上記第1分割溝の他方に隣接する第3分割溝を有し
た絶縁膜を形成する工程と、上記第1分割溝と上記第2
分割溝との間に、少なくとら第2電極膜及び半導体光活
性層まで延びる第4分割溝を形成する工程と、 −1−記絶縁膜十に、隣接する上記第3分割溝及び第1
分割溝の夫々から露出する第2電極膜及び第1電極膜を
、電気的に接続する接続電極膜を形成する工程と、 を備えたことを特徴とする。
(d) Means for Solving the Problems The present invention provides a photovoltaic device in which a first quadrupole film, a semiconductor photoactive layer, and a second electrode film are laminated in this order on an insulating surface of a substrate. , in a method of manufacturing a photovoltaic device in which a plurality of photovoltaic devices are electrically connected in series, a series of a first electrode film, a semiconductor photoactive layer, and a second electrode film are sequentially stacked on the insulating surface of the substrate. ] Step 2, forming a first dividing groove in the series of the first electrode film, the semiconductor photoactive layer, and the second electrode film, and forming the first dividing groove in the series of the first electrode film, the semiconductor photoactive layer, and the second electrode film for each of the photovoltaic elements. dividing the electrode film into electrode films, and forming a second dividing groove in the second electrode film adjacent to one of the first dividing grooves; the second electrode including the first dividing groove and the second dividing groove; forming an insulating film having a third dividing groove adjacent to the other one of the first dividing grooves on the film;
-1- forming a fourth dividing groove extending at least to the second electrode film and the semiconductor photoactive layer between the dividing groove;
The method is characterized by comprising a step of forming a connecting electrode film that electrically connects the second electrode film and the first electrode film exposed from each of the dividing grooves.

(ホ)作用 本発明によれば、各光起電力素子は第1分割溝により分
離され、そして隣接する光起電力素子は第3分割溝及び
第4分割溝に拡がる接続電極膜により、電気的に直列接
続される。
(E) Function According to the present invention, each photovoltaic element is separated by the first dividing groove, and adjacent photovoltaic elements are electrically connected by the connecting electrode film extending into the third dividing groove and the fourth dividing groove. connected in series.

(へ)実施例 第1図(a)乃至(e)は本発明の製造方法を工程順に
示す断面図である。
(f) Example FIGS. 1(a) to 1(e) are cross-sectional views showing the manufacturing method of the present invention in the order of steps.

同図(a)において、ガラス、耐熱性プラスチック等の
透明基板1上に、ITO,SnO+等の透光性導電酸化
物からなる透明電極膜2、非晶質シリコン等の非晶質半
導体からなる半導体光活性層3及びAg、AI等の金属
からなる裏面電極膜4がこの順に積層形成される。
In the figure (a), a transparent electrode film 2 made of a transparent conductive oxide such as ITO or SnO+ is formed on a transparent substrate 1 made of glass or heat-resistant plastic, and an amorphous semiconductor such as amorphous silicon. A semiconductor photoactive layer 3 and a back electrode film 4 made of a metal such as Ag or AI are laminated in this order.

同図(b)において、裏面t$i膜4上からレーザビー
ム等のエネルギービームを照射することにより、幅d(
約200pm)の第1分割溝5が形成され、複数に分割
された透明電極膜2a、2b、半導体光活性層3a、3
b及び裏面電極膜4a、4bが形成される。
In the same figure (b), the width d(
A first dividing groove 5 (approximately 200 pm) is formed, and the transparent electrode films 2a, 2b and semiconductor photoactive layers 3a, 3 are divided into a plurality of parts.
b and back electrode films 4a and 4b are formed.

また、裏面電極膜4bには、第1分割溝5に隣接し、こ
の溝5から幅α(約50pm )を隔てて、幅d(約2
00μm)の第2分割溝6が形成される。
Further, the back electrode film 4b has a width d (approximately 2 mm) adjacent to the first dividing groove 5 and spaced apart from the groove 5 by a width α (approximately 50 pm).
00 μm) second dividing groove 6 is formed.

同図(c)において、第1分割溝5及び第2分割溝6を
含む裏面電極膜4a、4b上に、第1分割溝5の左隣に
隣接する第3分割溝7を有した絶縁膜8が形成される。
In the same figure (c), on the back electrode films 4a and 4b including the first dividing groove 5 and the second dividing groove 6, there is an insulating film having a third dividing groove 7 adjacent to the left side of the first dividing groove 5. 8 is formed.

この絶縁膜8は、S+Ot、 Al*0*またはTie
s等の無機系薄膜やポリイミド等の樹脂系薄膜からなる
This insulating film 8 is S+Ot, Al*0* or Tie
It consists of an inorganic thin film such as S or a resin thin film such as polyimide.

同図(d)において、第1分割溝5と第2分割溝6との
間に、絶縁膜8上からレーザビーム等のエネルギービー
ムな照射することにより、第2電極膜2a、2b、半導
体光活性層3a、3b及び裏面電極膜4a1.lbを分
割する輻d(約200u++)の第4分割溝9が形成さ
l仁る。
In FIG. 4(d), by irradiating an energy beam such as a laser beam from above the insulating film 8 between the first dividing groove 5 and the second dividing groove 6, the second electrode films 2a, 2b and the semiconductor light Active layers 3a, 3b and back electrode film 4a1. A fourth dividing groove 9 having a radius d (approximately 200 u++) is formed to divide lb.

最後に、同図(e)において、絶縁膜8上に、第3分割
溝7及び第4分割溝9の夫々から露出する裏面電極膜4
a及び透明電極膜2bを電気的に接続するべ(、Ag、
AI、T1や導電ペースト等の接Ml極膜10が、蒸着
法やスクリーン印刷手法等により形成される。
Finally, as shown in FIG.
a and the transparent electrode film 2b (Ag,
A contact Ml electrode film 10 made of AI, T1, conductive paste, or the like is formed by a vapor deposition method, a screen printing method, or the like.

これにより、裏面電極膜4aと透明電極膜2bとは、第
3分割溝7から第4分割溝9まで延びる接続電極膜10
により電気的に接続され、直列接続された複数の光起電
力素子11a、 llbが形成される。
Thereby, the back electrode film 4a and the transparent electrode film 2b are connected to the connection electrode film 10 extending from the third dividing groove 7 to the fourth dividing groove 9.
A plurality of photovoltaic elements 11a and 11b connected in series are formed.

以上の方法によれば、光起電力素子11a、llbの隣
接間隔部11abの幅は、第1分割溝5、第2分割溝6
及びこれら分割溝の間の距離の合計2d十区となり、従
来の3d+2gに比してd+を分小さくなる。
According to the above method, the widths of the adjacent spacing parts 11ab of the photovoltaic elements 11a and llb are the same as that of the first dividing groove 5 and the second dividing groove 6.
The total distance between these dividing grooves is 2d, which is d+ smaller than the conventional 3d+2g.

これにより、5インチ角の基板上に15個の光起電力素
子を配した装置において、従来の構造での有効面積が8
8%であったものが、本発明では93%に向上し、その
結果、出力は従来と比べて約5%向上した。
As a result, in a device with 15 photovoltaic elements arranged on a 5-inch square substrate, the effective area of the conventional structure is 8.
The present invention improved the output from 8% to 93%, and as a result, the output was improved by about 5% compared to the conventional method.

ところで、上記実施例において、接続電極膜]0と透明
電極膜2bとは、高々膜厚0.2am程度の透明電極膜
2bの側面にて電気的に接続されているだけである。従
って、この部分での接続抵抗が高くなってしまう可能性
がある。
By the way, in the above embodiment, the connection electrode film]0 and the transparent electrode film 2b are electrically connected only at the side surface of the transparent electrode film 2b, which has a thickness of about 0.2 am at most. Therefore, there is a possibility that the connection resistance in this portion becomes high.

そこで、第1図(d)の工程において、第4分離溝9を
形成した後、この溝9内にドライエツチング処理を施し
、透明電極膜2bの側面をクリーンな状態とすることが
望ましい。
Therefore, in the step shown in FIG. 1(d), after forming the fourth separation groove 9, it is desirable to perform a dry etching process on the inside of the groove 9 to clean the side surface of the transparent electrode film 2b.

あるいは、第2図に示すように、第1図(d)の工程に
おいて、第4分離溝9を、絶縁膜8、裏面電極膜4b及
び半導体光活性層3bまで延び、透明電極膜4hの上面
を幅約100μmにわたって露出させるように形成する
のが好ましい。この構成によって、接続電極膜11は透
明電極膜4bと十分に接触するようにしても良い。
Alternatively, as shown in FIG. 2, in the step of FIG. 1(d), the fourth separation groove 9 is extended to the insulating film 8, the back electrode film 4b, and the semiconductor photoactive layer 3b, and the upper surface of the transparent electrode film 4h is It is preferable to form it so that it is exposed over a width of about 100 μm. With this configuration, the connection electrode film 11 may be brought into sufficient contact with the transparent electrode film 4b.

(ト)発明の効果 本発明方法によれば、光起電力装置の発電無効領域であ
る光起電力素子の隣接間隔部の大きさを小さくして有効
受光面積を拡大することができ、光起電力装置の出力を
向−ヒさせることができる。
(G) Effects of the Invention According to the method of the present invention, the effective light receiving area can be expanded by reducing the size of the adjacent spacing between photovoltaic elements, which is the ineffective power generation area of the photovoltaic device. The output of the power device can be increased.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)乃至(e)は本発明の製造方法を工程順に
示す断面図、第2図は本発明の異なる製造方法の一部を
示す断面図、第3図は従来の方法によ)製造された光起
電力装置を示す断面図である。
Figures 1(a) to (e) are cross-sectional views showing the manufacturing method of the present invention in the order of steps, Figure 2 is a cross-sectional view showing a part of a different manufacturing method of the present invention, and Figure 3 is a cross-sectional view showing a conventional method. ) is a cross-sectional view showing the manufactured photovoltaic device.

Claims (1)

【特許請求の範囲】[Claims] (1)基板の絶縁表面上に、第1電極膜、半導体光活性
層及び第2電極膜をこの順序に積層してなる光起電力素
子を、複数個電気的に直列接続して配した光起電力装置
の製造方法において、上記基板の絶縁表面上に一連状の
第1電極膜、半導体光活性層及び第2電極膜を順次積層
形成する工程と、 上記一連状の第1電極膜、半導体光活性層及び第2電極
膜に第1分割溝を形成して上記光起電力素子毎の第1電
極膜、半導体光活性層及び第2電極膜に分割すると共に
、上記第1分割溝の一方に隣接して上記第2電極膜に第
2分割溝を形成する工程と、 上記第1分割溝及び第2分割溝を含む上記第2電極膜上
に、上記第1分割溝の他方に隣接する第3分割溝を有し
た絶縁膜を形成する工程と、上記第1分割溝と上記第2
分割溝との間に、少なくとも第2電極膜及び半導体光活
性層まで延びる第4分割溝を形成する工程と、 上記絶縁膜上に、隣接する上記第3分割溝及び第4分割
溝の夫々から露出する第2電極膜及び第1電極膜を、電
気的に接続する接続電極膜を形成する工程と、 を備えたことを特徴とする光起電力装置の製造方法。
(1) A photovoltaic device in which a plurality of photovoltaic elements each having a first electrode film, a semiconductor photoactive layer, and a second electrode film laminated in this order are electrically connected in series on an insulating surface of a substrate. A method for manufacturing an electromotive force device, comprising: sequentially forming a series of first electrode films, a semiconductor photoactive layer, and a second electrode film on the insulating surface of the substrate; A first dividing groove is formed in the photoactive layer and the second electrode film to divide it into a first electrode film, a semiconductor photoactive layer, and a second electrode film for each of the photovoltaic elements, and one of the first dividing grooves is formed. forming a second dividing groove in the second electrode film adjacent to the second dividing groove; a step of forming an insulating film having a third dividing groove;
forming a fourth dividing groove extending to at least the second electrode film and the semiconductor photoactive layer between the dividing groove; and forming a fourth dividing groove extending from each of the adjacent third dividing groove and fourth dividing groove on the insulating film. A method for manufacturing a photovoltaic device, comprising: forming a connecting electrode film that electrically connects the exposed second electrode film and first electrode film.
JP2047938A 1990-02-28 1990-02-28 Method for manufacturing photovoltaic device Expired - Fee Related JP2798772B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2047938A JP2798772B2 (en) 1990-02-28 1990-02-28 Method for manufacturing photovoltaic device

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665607A (en) * 1993-06-11 1997-09-09 Mitsubishi Denki Kabushiki Kaisha Method for producing thin film solar cell
JP2009512197A (en) * 2005-10-07 2009-03-19 アプライド マテリアルズ インコーポレイテッド Systems and methods for forming improved thin film solar cell interconnects
JP2010502002A (en) * 2006-08-22 2010-01-21 ティモシー マイケル ウォルシュ Thin film solar module
WO2010113880A1 (en) * 2009-03-31 2010-10-07 芝浦メカトロニクス株式会社 Method for manufacturing solar cell, apparatus for manufacturing solar cell, and solar cell

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665607A (en) * 1993-06-11 1997-09-09 Mitsubishi Denki Kabushiki Kaisha Method for producing thin film solar cell
JP2009512197A (en) * 2005-10-07 2009-03-19 アプライド マテリアルズ インコーポレイテッド Systems and methods for forming improved thin film solar cell interconnects
JP2010502002A (en) * 2006-08-22 2010-01-21 ティモシー マイケル ウォルシュ Thin film solar module
WO2010113880A1 (en) * 2009-03-31 2010-10-07 芝浦メカトロニクス株式会社 Method for manufacturing solar cell, apparatus for manufacturing solar cell, and solar cell

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