JPH03151673A - Manufacture of photovoltaic device - Google Patents

Abstract

PURPOSE:To protect an underlying film from damage due to irradiation with an energy beam and hence improve the field of manufacture by simultaneously dividing a semiconductor optical active layer and a transparent electrode film by the use of energy beam irradiation. CONSTITUTION:A transparent electrode film 2 and a semiconductor optical active layer 3 are formed by lamination on a transparent substrate 1, which are irradiated with an energy beam EB from the upper of the semiconductor optical active layer 3, whereby a divided groove 4 is formed vertically with respect to the paper. Thus, a plurality of divided transparent electrode films 2a, 2b and semiconductor optical active layers 3a, 3b are formed and hence band-shaped insulating members 5a, 5b are formed. Finally, a divided groove 7 is formed at a location opposite to the insulating member 5 of the metal electrode film 6 by irradiation with the energy beam EB and hence a plurality of divided metal electrode films 6a, 6b are formed. Thereupon, the metal electrode film 6a makes electrical contact with the side surface of the adjacent transparent electrode film 2a in the divided groove 4, whereby, a plurality of electrically series-connected photovoltaic devices 8a, 8b are formed. Hereby, the semiconductor optical active layer is prevented from being damaged by the energy beam irradiation, and hence the yield of manufacture is not lowered.

Description

DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a method for manufacturing an integrated photovoltaic device in which a plurality of photovoltaic elements are electrically connected in series.

(b) A conventional technology-integrated photovoltaic device is formed on an insulating substrate with a plurality of photovoltaic elements electrically connected in series in order to obtain a predetermined photovoltaic force. In this photovoltaic device, the photovoltaic elements are connected in series and divided in order to minimize the power generation ineffective area that occurs in the parts that are electrically connected in series, and to simplify the manufacturing process. For this purpose, a method using an energy beam such as a laser beam has been proposed.

One method for manufacturing photovoltaic devices using energy beams is presented in the March 1985 issue of Functional Materials [Solar Cells and Lasers Flu, 1j.

FIG. 2 shows a cross-sectional view of a photovoltaic device manufactured by this method. First, a series of transparent electrode films 21a are formed on almost the entire surface of a transparent substrate 2o made of glass, heat-resistant plastic, etc. , 21b are formed and then irradiated with an energy beam such as a laser beam to form a plurality of transparent electrode films 21a and 21b divided and arranged at predetermined adjacent intervals.

Next, a series of semiconductor photoactive layers 24a and 24b made of an amorphous semiconductor such as amorphous silicon is formed on almost the entire surface of the substrate 2o, including the transparent electrode films 21a and 21b. Semiconductor photoactive layers 24a and 24b are formed by irradiating an energy beam along one side (right side in the figure) of the adjacent spacing portions 21b.

Finally, a series of metal electrode films 25a, 25b are formed on the semiconductor photoactive layers 24a, 24b, including the adjacent spaced parts.
is formed. Then, by irradiating an energy beam along one side (right side in the figure) of the semiconductor photoactive layers 24a and 24b, the plurality of metal electrodes tl@25a
, 25b are formed.

As described above, the metal electrode film 25a and the transparent electrode film 21b are electrically connected 71, and photovoltaic elements 28a and 28b electrically connected in series are formed.

On the other hand, FIG. 3 is a sectional view showing a photovoltaic device manufactured by another conventional method using an energy beam as disclosed in Japanese Patent Application Laid-Open No. 62-33477.

The manufacturing method of this device is as follows: First, a plurality of transparent electrode films 31a, 3
1b are divided and arranged at predetermined adjacent intervals. Then, a strip-shaped conductive paste 32 and an insulating paste 33 having a width of 0.2 to 0.5 mm are placed parallel to the adjacent spacing portion along the vicinity of one side edge of the transparent electrodes lli 31 a, 31 b from the side closer to the adjacent spacing portion. are formed side by side by screen printing.

Next, almost the entire surface of the substrate 30, including the surfaces of the transparent electrode films 31a and 31b, the conductive paste 32, and the insulating paste 33, is coated with an amorphous semiconductor such as amorphous silicon. Layers 34a, 34b are formed, followed by interconnected metal electrode films 35a, 35b. Thereafter, at each position facing the conductive paste 32 and the insulating paste 33, the conductive paste 32 and the insulating paste 33 are moved from 0°05 to (1,1
A connecting portion 36 and a separation groove 37 are formed by irradiating an energy beam such as a laser beam with a width of mm.

As described above, the metal electrode film 35a and the transparent electrode film 31b are electrically connected, and the semiconductor photoactive layer 34a,
34b and metal electrode films 35a, 35b are divided, and photovoltaic elements 38a, 38b are electrically connected in series.
is formed.

(c) Problems to be Solved by the Invention By the way, according to the above-mentioned former method, the semiconductor photoactive layer 2
The energy beam irradiated at the time of forming 4a, 24b and the metal electrode films 25a, 25b is applied to the transparent electrode films 21a, 21b and semiconductor light existing under the semiconductor photoactive layers 24a, 24b and the metal electrode films 25a, 25b. active layer 2
It is necessary to strictly adjust its strength so as not to damage 4a and 2.1b. Furthermore, even if the adjustment is made, the transparent electrode films 21a, 21b and the semiconductor photoactive layers 24a, 24b will be damaged to some extent, resulting in a decrease in manufacturing yield.

On the other hand, according to the latter method, although it is not necessary to adjust the intensity of the energy beam very strictly, many work steps are required because the conductive paste 32 and the insulating paste 33 need to be formed in separate steps. Furthermore, since the conductive paste 32 and the insulating paste 33 are both formed on the transparent electrode films 31a and 31b, the effective light-receiving area is reduced.

Therefore, an object of the present invention is to eliminate the need for strict adjustment of the intensity of the energy beam and to reduce the number of work steps as much as possible.

(d) Means for Solving the Problems The method for manufacturing a photovoltaic device of the present invention comprises laminating a first electrode film, a semiconductor photoactive layer, and a second electrode film in this order on an insulating surface of a substrate. In a method for manufacturing a photovoltaic device in which a plurality of photovoltaic elements are electrically connected in series and arranged, 11) a series of first electrode films and semiconductor photoactive layers are sequentially laminated on the insulating surface of the substrate; forming a first dividing groove in the series of @1 electrode films and the semiconductor photoactive layer by irradiation with an energy beam, forming a first electrode film and the semiconductor photoactive layer for each of the photovoltaic elements; along the first dividing groove, a position close to the first dividing groove on the semiconductor photoactive layer of one of the adjacent photovoltaic elements, and a first electrode film of the other element; forming a band-shaped insulating member at a position within the first dividing groove to cover an end of the semiconductor photoactive layer; and forming a series of insulating members on the divided semiconductor photoactive layer including the inside of the dividing groove. forming a two-electrode film, and forming a second dividing groove in a position facing the insulating member of the series of second electrode films by irradiation with an energy beam, and forming a second dividing groove in a position facing the insulating member of the second electrode film of the adjacent photovoltaic element; forming a second electrode film for each of the photovoltaic elements electrically connected to the photovoltaic element;

(E) Function According to the present invention, the step of forming the first electrode film, the step of forming the semiconductor photoactive layer, the step of irradiating the energy beam, the step of forming the insulating member, and the step of forming the second electrode film. and irradiation with an energy beam. Through these six steps, a photovoltaic device in which a plurality of photovoltaic elements are connected in series on a substrate is manufactured.

(f) Example FIGS. 1(a) to 1(e) are cross-sectional views showing the manufacturing method of the present invention in the order of steps.

In the same figure (a), a transparent electrode film 2 and a semiconductor photoactive layer 3 are placed on a transparent substrate 1 made of glass, heat-resistant plastic, etc.
are layered in this order.

The semiconductor photoactive layer 3 is formed using the well-known plasma CVD method or photoCVD method.
It is made of an amorphous semiconductor such as amorphous silicon, amorphous silicon carbide, amorphous silicon germanium, etc. formed by a method such as amorphous silicon. Further, the semiconductor rod tip active layer 3 has a semiconductor junction such as a pn junction or a pin junction in parallel with its film surface.

In the same figure (b), by irradiating an energy beam EB such as a laser beam from above the semiconductor photoactive layer 3,
A dividing groove 4 with a width of about 0.2 mm is formed in the direction perpendicular to the plane of the paper, and a plurality of divided transparent electrode films 2a, 2b and semiconductor photoactive layers 3a, 3b are formed.

In the same figure (C), along the dividing groove 4, the first electrode film 2
Band-shaped insulating members 5a and 5b are formed at positions within the dividing groove 4 covering the ends of the semiconductor photoactive layer 3a and at positions close to the dividing groove 4 on the semiconductor photoactive layer 3b. The width of each insulating member 5a, 5b is approximately 0.1 mm and 0.3 mm.

In FIG. 4(d), a metal electrode film 6 is formed on the semiconductor photoactive layers 3a and 3b, including inside the dividing groove 4.

Finally, in the same figure (e), a dividing groove 7 is formed in a position facing the insulating member 5b of the metal electrode film 6 by irradiation with the energy beam EB, and a plurality of divided metal electrode films 6a and 6b are formed. be done.

As a result, the metal electrode film 6a comes into electrical contact with the side surface of the adjacent transparent electrode film 2b within the dividing groove 4, and as a result, a plurality of photovoltaic elements 8a, 8b electrically connected in series are formed. Ru.

(Effects of the Invention According to the method of the invention, the semiconductor photoactive layer and the transparent electrode film are simultaneously divided by energy beam irradiation.
There is no need to worry about protecting the underlying film from damage caused by energy beam irradiation.

In addition, when dividing the metal electrode film, an insulating member is used to
The semiconductor photoactive layer is not damaged by energy beam irradiation. Therefore, manufacturing yield is not reduced.

Furthermore, since the insulating member 5a is provided within the dividing groove, the insulating member 5a does not reduce the effective light receiving area.
Decrease in effective light receiving area can be suppressed to a minimum.

Furthermore, since the insulating members are formed at the same time, the number of manufacturing steps does not undesirably increase.

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[Brief explanation of the drawing]

FIGS. 1(a) to (e) are cross-sectional views showing the manufacturing method of the present invention in order of steps, and FIGS. 2 and 3 are cross-sectional views showing photovoltaic devices manufactured by conventional methods, respectively.

Claims (1)

[Claims] (1) A photovoltaic device in which a plurality of photovoltaic elements each having a first electrode film, a semiconductor photoactive layer, and a second electrode film laminated in this order are electrically connected in series on an insulating surface of a substrate. The method for manufacturing a power device includes the steps of: sequentially forming a series of first electrode films and semiconductor photoactive layers on the insulating surface of the substrate;
forming a first dividing groove in an electrode film and a semiconductor photoactive layer, and forming a first electrode film and a semiconductor photoactive layer for each of the photovoltaic elements; A position close to the first dividing groove on the semiconductor photoactive layer of one element of the electromotive force element, and a position in the first dividing groove covering the first electrode film and the end of the semiconductor photoactive layer of the other element. forming a strip-shaped insulating member at the position; forming a series of second electrode films on the divided semiconductor photoactive layer including inside the dividing groove; A second dividing groove is formed at a position facing the insulating member of the second electrode film of the shape, and the second dividing groove of each of the photovoltaic elements is electrically connected to the first electrode film of the adjacent photovoltaic element. A photovoltaic device comprising: a step of forming an electrode film;