JPH03179784A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPH03179784A JPH03179784A JP1318071A JP31807189A JPH03179784A JP H03179784 A JPH03179784 A JP H03179784A JP 1318071 A JP1318071 A JP 1318071A JP 31807189 A JP31807189 A JP 31807189A JP H03179784 A JPH03179784 A JP H03179784A
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- film
- metal member
- transparent electrode
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 239000010935 stainless steel Substances 0.000 abstract description 2
- 229910001220 stainless steel Inorganic materials 0.000 abstract description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は、複数の光起電力素子を１気的に直列接続した
集積型の光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to an integrated photovoltaic device in which a plurality of photovoltaic elements are connected in series.
（ロ）従来の技術
集積型光起電力装置は、所定の光起電力を得るため、複
数の光起電力素子を電気的に直列接続した状態で絶縁基
板上に形成される。このような光起電力装置において、
電気的に直列接続する部分に生じる発電の無効領域をで
きるだけ小さくすること、及び製造工程を容易にするこ
と等を目的として、光起電力素子の直列接続及び分割配
置にレーザ光を用いる構造が提案されている。(b) A conventional technology-integrated photovoltaic device is formed on an insulating substrate with a plurality of photovoltaic elements electrically connected in series in order to obtain a predetermined photovoltaic force. In such a photovoltaic device,
A structure that uses laser light to connect and divide photovoltaic elements in series has been proposed in order to minimize the ineffective area for power generation that occurs in the parts that are electrically connected in series, and to simplify the manufacturing process. has been done.
第７図は特開昭６２−３３４７７号公報に見ちれる従来
の方法により形成された光起電力装置を示す断面図であ
る。この装置を製造するにあたっては、まず、ガラス、
耐熱プラスチック等の透明基板（２０）上に、複数の透
明電極膜（２１ａ）（２１ｂ）を所定の隣接間隔部を隔
てて分割配置し、透明電極膜（２１ａ）（２１ｂ）の−
側縁近傍に沿って隣接間隔部と平行に、隣接間隔部に近
い側から幅が０．２〜０．５ｍｍの帯状の導電ベース）
（２２）が形成される。次に、透明電極膜（２１ａ）
（２１ｂ）及び導電ペースト（２２）の表面を含んで基
板（２０）のほぼ全面に、アモルファスシリコン等から
なる一連の半導体光活性層（２３ａ）（２３ｂ）が、続
いて、一連の金属電極膜（２４ａ）（２４ｂ）が形成さ
れる。FIG. 7 is a sectional view showing a photovoltaic device formed by a conventional method as disclosed in Japanese Patent Application Laid-Open No. 62-33477. In manufacturing this device, first, glass,
On a transparent substrate (20) made of heat-resistant plastic or the like, a plurality of transparent electrode films (21a) (21b) are divided and arranged at predetermined adjacent intervals, and -
(A strip-shaped conductive base with a width of 0.2 to 0.5 mm from the side near the adjacent gap, along the vicinity of the side edge and parallel to the adjacent gap)
(22) is formed. Next, the transparent electrode film (21a)
A series of semiconductor photoactive layers (23a) (23b) made of amorphous silicon etc. are formed on almost the entire surface of the substrate (20) including the surfaces of the conductive paste (21b) and the conductive paste (22), followed by a series of metal electrode films. (24a) (24b) are formed.
その後、導電ペースト（２２）と対向する位置にて、金
属電極膜（２４ａ）（２４ｂ）の上から導電ペースト（
２２）に達するように０．０５〜０．１Ｍの幅でレーザ
ビームを照射して加工が行われ、接続部（２５）が形成
される。Thereafter, the conductive paste (22) is placed over the metal electrode films (24a) (24b) at a position facing the conductive paste (22).
Processing is performed by irradiating a laser beam with a width of 0.05 to 0.1M so as to reach 22), thereby forming a connecting portion (25).
これによって、金属電極膜（２４ａ）と透明電極膜（２
１ｂ）とが電気的に接続されると共に、半導体光活性層
（２３ａ）（２３ｂ）及び金属ｔｔｆｉ膜（２４ａ）（
２４ｂ）の分割が行われ、その結果、光起電力素子（２
６ａ）（２６ｂ）は電気的に直列接続される。As a result, the metal electrode film (24a) and the transparent electrode film (24a)
1b) are electrically connected, and the semiconductor photoactive layers (23a) (23b) and the metal TTFI film (24a) (
24b), resulting in a photovoltaic element (2
6a) (26b) are electrically connected in series.
（ハ）発明が解決しようとする課題
ところで、上述の従来例において、基板（２０）の反対
側から光照射を行う構成した場合、透明電極膜（２１ａ
）（２１ｂ）と金属電極膜（２４ａ）（２４ｂ）との配
置が逆となり、従って、レーザビームが透明電極膜（２
１ａ）（２１ｂ）上に照射されることとなる。(c) Problems to be Solved by the Invention By the way, in the above-mentioned conventional example, when light is irradiated from the opposite side of the substrate (20), the transparent electrode film (21a
) (21b) and the metal electrode films (24a) and (24b) are reversed, so that the laser beam is directed to the transparent electrode film (24b).
1a) (21b) will be irradiated.
ところが、その場合、レーザビームを照射することによ
り形成された接続部の接続抵抗値が大きくなり、その結
果、光起電力装置全体の直列抵抗が大きくなって装置の
出力特性が低下する。However, in this case, the connection resistance value of the connection portion formed by laser beam irradiation becomes large, and as a result, the series resistance of the entire photovoltaic device becomes large, and the output characteristics of the device deteriorate.
特に、上記接続部の接続性は、高温下において大きく劣
化し、信頼性の面で問題がある。In particular, the connectivity of the connection portion is significantly degraded at high temperatures, which poses a problem in terms of reliability.
（ニ）課題を解決するための手段
本発明は、絶縁基板上に、裏面電極膜、半導体光活性層
及び透明電極膜をこの順に積層した複数の光起電力素子
を形威し、上記透明電極膜上にレーザ光を照射してこの
１を極膜と隣の裏面電極膜とを電気的に接続することに
より、上記複数の光起電力素子を直列接続する光起電力
装置の製造方法において、上記透明電極膜の上記レーザ
光を照射する部分に金属部材を形成し、この金属部材上
からレーザ光を照射することを特徴とする。(d) Means for Solving the Problems The present invention forms a plurality of photovoltaic elements in which a back electrode film, a semiconductor photoactive layer, and a transparent electrode film are laminated in this order on an insulating substrate, and the transparent electrode In a method for manufacturing a photovoltaic device in which the plurality of photovoltaic elements are connected in series by irradiating a laser beam onto the film and electrically connecting the polar film and the adjacent back electrode film, A metal member is formed in a portion of the transparent electrode film to be irradiated with the laser light, and the laser light is irradiated from above the metal member.
（ホ）作用
本発明のよれば、透明電極膜上に形成された金属材料が
、この電極膜と裏面電極膜との！気的接続性を向上させ
る。(E) Function According to the present invention, the metal material formed on the transparent electrode film is the same as the electrode film and the back electrode film! improve physical connectivity.
（へ）実施例
第１図乃至第５図は本発明の製造方法を工程順に示す断
面図である。(F) Embodiment FIGS. 1 to 5 are cross-sectional views showing the manufacturing method of the present invention in the order of steps.
第１図に示す工程において、ステンレス等の可撓性の基
板（１）上に、絶縁膜（２〉が約１〜１０ｐｍの膜厚で
形威され、更に、約１０（１０〜３０００人の膜厚の、
Ａ Ｉ膜及び約３００〜１０００人の膜厚のＴｉ膜の２
層から収る金属電極膜（３ａ０３ｂ）が、分離した配置
で形成される。In the process shown in Fig. 1, an insulating film (2) with a thickness of about 1 to 10 pm is formed on a flexible substrate (1) made of stainless steel, etc. film thickness,
2 of the AI film and the Ti film with a thickness of about 300 to 1000
A metal electrode film (3a03b) subtracting from the layer is formed in a separate arrangement.
第２図に示す工程において、金属電極膜（３ａ）（３ｂ
）の隣接間隔部近傍に、導電部材（４）が帯状に形威さ
れる。この導電部材（４）は、Ａｇペーストやその他に
金属ペーストをスクリーン印刷手法により、高さ約１０
〜２０＃ｍ及び幅約１００〜１５０μｍにパターニング
した後、約５５０℃の温度にて焼成することにより、形
成される。In the process shown in FIG. 2, metal electrode films (3a) (3b
), a conductive member (4) is formed in the form of a band near the adjacent spaced portion. This conductive member (4) is made by screen printing Ag paste or other metal paste to a height of approximately 10 mm.
It is formed by patterning to ~20 #m and width of approximately 100 to 150 μm and then firing at a temperature of approximately 550°C.
第３図に示す工程において、金属電極膜（３ａ）（３ｂ
〉及び導電部材（４）を含んで基板（１）の表面全面に
、光電変換に有効に寄与する約３０００〜５０００人の
膜厚の非晶質シリコン等の非晶質半導体層（３）及び約
５００〜２０００人の膜厚のＩ Ｔ Ｏ、Ｓ ｎ Ｏ＊
等の透光性導電酸化物からなる透明電極膜（６）が、順
に形威される。尚、非晶質半導体層（５）は周知のプラ
ズマＣＶＤ法や光ＣＶＤ法により形成される。In the process shown in FIG. 3, metal electrode films (3a) (3b)
> and the conductive member (4), an amorphous semiconductor layer (3) such as amorphous silicon having a thickness of about 3,000 to 5,000 layers is applied to the entire surface of the substrate (1), which effectively contributes to photoelectric conversion; ITO, SnO* with a film thickness of about 500 to 2000 people
A transparent electrode film (6) made of a transparent conductive oxide such as the following is formed in order. Note that the amorphous semiconductor layer (5) is formed by the well-known plasma CVD method or photoCVD method.
第４図に示す工程において、透明電極膜（６）上の導電
部材（４ンと対向する部分に、約１０００〜３０００人
の膜厚のＡｇ層（７ａ）及び約３００〜１０００人の１
１＊厚のＴｉ層（７ｂ）の積層体からなる金属部材（８
）が、幅約５００〜７０（）μｍの帯状に形威される。In the process shown in FIG. 4, an Ag layer (7a) with a thickness of about 1,000 to 3,000 layers and an Ag layer (7a) with a thickness of about 300 to 1,000 layers are placed on the part facing the conductive member (4) on the transparent electrode film (6).
A metal member (8
) is shaped like a band with a width of about 500 to 70 () μm.
この金属部材（８）は、透明電極膜（６）上に、膜状に
Ａｇ層（７ａ）及びＴｉ層（７ｂ）を形威さた後、これ
らを夫々弗硝酸水溶液及び硝酸水溶液にてエツチングす
ることにより、パターニング形成される。This metal member (8) is produced by forming a film-like Ag layer (7a) and a Ti layer (7b) on the transparent electrode film (6), and then etching these with a fluoronitric acid aqueous solution and a nitric acid aqueous solution, respectively. By doing so, patterning is formed.
最後に、第５図に示す工程において、金属部材（８）上
及びそれの隣（本実施例では右隣）の裏面電極膜（６）
上に、帯状にレーザビームが照射される。これにより、
金属部材（８）の部分においては、この金属部材（８）
が溶融して非晶質半導体層（５）の半導体と合金（非晶
質半導体層（５）が非晶質シリコンであればシリサイド
合金）を形成する。そして、これがその下の導電部材（
４）と電気的に接続される。この時、この接続部分は、
非晶質半導体層（５）を２つの層（５ａ）（５ｂ）に分
離する。Finally, in the step shown in FIG.
A laser beam is irradiated onto the top in a band-like manner. This results in
In the part of the metal member (8), this metal member (8)
is melted to form an alloy with the semiconductor of the amorphous semiconductor layer (5) (a silicide alloy if the amorphous semiconductor layer (5) is amorphous silicon). And this is the conductive member under it (
4) is electrically connected to. At this time, this connection part is
The amorphous semiconductor layer (5) is separated into two layers (5a) and (5b).
一方、裏面電極膜（６）上にレーザビームを照射するこ
とにより、裏面電極膜（６）が２つの電極膜（６ａ）（
６ｂ）に分離される。On the other hand, by irradiating the back electrode film (6) with a laser beam, the back electrode film (6) is divided into two electrode films (6a) (
6b).
こうして、２つの光起電力素子（９ａ）（９ｂ）が電気
的に直列接続された状態で、基板（１）上に形威される
。In this way, the two photovoltaic elements (9a) (9b) are formed on the substrate (1) in a state where they are electrically connected in series.
第６図（ａ）乃至（ｄ）は、金属部材（８〉のない従来
の光起電力装＠（破線）と本発明の光起電力装置（実線
）の各出力特性、即ち、最大出力、開放電圧、短絡電流
及び曲線因子に関し、１１５℃の状態における高温信頼
性試験結果を示す。尚、同図は初期値により規格化した
値を示している。FIGS. 6(a) to 6(d) show the output characteristics of the conventional photovoltaic device without metal member (8) (broken line) and the photovoltaic device of the present invention (solid line), that is, the maximum output, The results of a high temperature reliability test at 115° C. are shown for open circuit voltage, short circuit current, and fill factor.The figure shows values normalized by initial values.
同図から明らかなように、本発明によれば、曲線因子に
おいて、経時変化が従来例よりも劣るものの、その他の
最大出力、開放電圧及び短絡電流に関し、それらの経時
変化は従来例に比べて余り劣化しない。従って、光起電
力装置の信頼性を大きく向上させることができる。As is clear from the figure, according to the present invention, although the change over time in the fill factor is inferior to that of the conventional example, the change over time of other maximum output, open circuit voltage, and short circuit current is lower than that of the conventional example. It doesn't deteriorate much. Therefore, the reliability of the photovoltaic device can be greatly improved.
（ト）発明の効果
本発明によれば、透明電極膜のレーザ光を照射する部分
に金属部材を形威し、この金属部材上からレーザ光を照
射するので、光起電力装置の出力特性の経時変化を抑制
することができ、高信頼性の光起電力装置を提供するこ
とができる。(G) Effects of the Invention According to the present invention, a metal member is formed in the portion of the transparent electrode film that is irradiated with laser light, and the laser light is irradiated from above this metal member, so that the output characteristics of the photovoltaic device can be improved. Changes over time can be suppressed, and a highly reliable photovoltaic device can be provided.
第１図乃至第５図は本発明の製造方法を工程順に示す断
面図、第６図（ａ）乃至（ｄ）は光起電力装置の出力の
高温信頼性試験結果を示す特性図、第７図は従来例を示
す断面図である。1 to 5 are cross-sectional views showing the manufacturing method of the present invention in the order of steps, FIGS. 6(a) to 6(d) are characteristic diagrams showing the high temperature reliability test results of the output of the photovoltaic device, and FIG. The figure is a sectional view showing a conventional example.
Claims (1)
透明電極膜をこの順に積層した複数の光起電力素子を形
成し、上記透明電極膜上にレーザ光を照射してこの電極
膜と隣の裏面電極膜とを電気的に接続することにより、
上記複数の光起電力素子を直列接続する光起電力装置の
製造方法において、上記透明電極膜の上記レーザ光を照
射する部分に金属部材を形成し、この金属部材上からレ
ーザ光を照射することを特徴とする光起電力装置の製造
方法。(1) Form a plurality of photovoltaic elements in which a back electrode film, a semiconductor photoactive layer, and a transparent electrode film are laminated in this order on an insulating substrate, and irradiate the transparent electrode film with laser light to form this electrode film. By electrically connecting and the adjacent back electrode film,
In the method for manufacturing a photovoltaic device in which a plurality of photovoltaic elements are connected in series, a metal member is formed in a portion of the transparent electrode film that is irradiated with the laser light, and the laser light is irradiated from above the metal member. A method for manufacturing a photovoltaic device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318071A JP2819538B2 (en) | 1989-12-07 | 1989-12-07 | Method for manufacturing photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318071A JP2819538B2 (en) | 1989-12-07 | 1989-12-07 | Method for manufacturing photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03179784A true JPH03179784A (en) | 1991-08-05 |
| JP2819538B2 JP2819538B2 (en) | 1998-10-30 |
Family
ID=18095155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1318071A Expired - Fee Related JP2819538B2 (en) | 1989-12-07 | 1989-12-07 | Method for manufacturing photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2819538B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132552A (en) * | 1992-10-19 | 1994-05-13 | Canon Inc | Photovoltaic element and manufacture thereof |
-
1989
- 1989-12-07 JP JP1318071A patent/JP2819538B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06132552A (en) * | 1992-10-19 | 1994-05-13 | Canon Inc | Photovoltaic element and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2819538B2 (en) | 1998-10-30 |
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