JPH0525253Y2 - - Google Patents
Info
- Publication number
- JPH0525253Y2 JPH0525253Y2 JP5940987U JP5940987U JPH0525253Y2 JP H0525253 Y2 JPH0525253 Y2 JP H0525253Y2 JP 5940987 U JP5940987 U JP 5940987U JP 5940987 U JP5940987 U JP 5940987U JP H0525253 Y2 JPH0525253 Y2 JP H0525253Y2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- electrode layers
- adjacent
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000006072 paste Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は複数の光電変換素子を同一基板上で直
列接続してなる光起電力装置に関する。[Detailed description of the invention] (a) Industrial application field The present invention relates to a photovoltaic device formed by connecting a plurality of photoelectric conversion elements in series on the same substrate.
(ロ) 従来の技術
この種光起電力装置は、特開昭59−94885号公
報等により既に知られており、第３図及び第４図
はその平面図及び側面断面図を示している。１は
ガラス基板、２ａ〜２ｃは該ガラス基板の表面に
分割配置された透明導電酸化物TCOから成る第
１電極層、３ａ〜３ｃはこれら第１電極層上に積
層形成されたアモルフアス半導体から成る光活性
層であり、光活性層３ａ〜３ｂはその右隣りの隣
接間隔部ab，bcを経て第１電極層２ｂ，２ｃの
左端部にまで形成されている。４ａ〜４ｃは各光
活性層３ａ〜３ｃ上に積層形成された金属から成
る第２電極層であり、第２電極層４ａ，４ｂはそ
の右隣りの第１電極層２ｂ，２ｃと電気的に接続
されている。こうして形成された３つの光電変換
素子５ａ〜５ｃは直列接続されており、左端の光
電変換素子５ａの第１電極層２ａと右端の光電変
換素子５ｃの第２電極層４ｃとの間で直列の光電
変換出力が得られる。(b) Prior Art This type of photovoltaic device is already known from Japanese Patent Laid-Open No. 59-94885, etc., and FIGS. 3 and 4 show a plan view and a side sectional view thereof. 1 is a glass substrate, 2a to 2c are first electrode layers made of a transparent conductive oxide TCO divided and arranged on the surface of the glass substrate, and 3a to 3c are made of amorphous semiconductors laminated on these first electrode layers. The photoactive layers 3a to 3b are formed to reach the left end portions of the first electrode layers 2b and 2c via adjacent spacing portions ab and bc on the right. 4a to 4c are second electrode layers made of metal laminated on each of the photoactive layers 3a to 3c, and the second electrode layers 4a and 4b are electrically connected to the first electrode layers 2b and 2c on the right side thereof. It is connected. The three photoelectric conversion elements 5a to 5c thus formed are connected in series, and the first electrode layer 2a of the leftmost photoelectric conversion element 5a and the second electrode layer 4c of the rightmost photoelectric conversion element 5c are connected in series. Photoelectric conversion output can be obtained.
斯る構成の光起電力装置を作成する際、第１電
極層２ａ〜２ｃは一旦基板１の略表面全面に形成
された後レーザビームの如きエネルギービームの
照射によつて夫々に分割される。斯るレーザパタ
ーニングによれば簡単なプロセスとなる。 When producing a photovoltaic device having such a configuration, the first electrode layers 2a to 2c are once formed on substantially the entire surface of the substrate 1, and then divided into individual layers by irradiation with an energy beam such as a laser beam. Such laser patterning provides a simple process.
(ハ) 考案が解決しようとする問題点
ところで、レーザビームによるパターニングに
おいて、レーザビームの強度を充分なものとする
ために、そのビーム径を数10μmとする必要があ
る。この場合、各第１電極層２ａ〜２ｃの隣接間
隔部ab，bcの幅は当然数10μmとなる。(c) Problems to be solved by the invention By the way, in patterning using a laser beam, in order to obtain sufficient intensity of the laser beam, it is necessary to set the beam diameter to several tens of micrometers. In this case, the width of the adjacent spaced portions ab, bc of each of the first electrode layers 2a to 2c is naturally several tens of micrometers.
こうして分割配置された第１電極層２ａ〜２ｃ
上にアモルフアス半導体から成る光活性層３ａ〜
３ｃが積層形成されるが、光活性層３ａ，３ｂは
隣接間隔部ab，bcを越えて右隣りの第１電極層
２ｂ，２ｃまで至つている。 The first electrode layers 2a to 2c thus divided and arranged
A photoactive layer 3a made of an amorphous semiconductor is provided thereon.
3c are laminated, and the photoactive layers 3a and 3b reach the first electrode layers 2b and 2c on the right side beyond the adjacent spacing parts ab and bc.
従つて、フモルフアス半導体から成る光活性層
３ａ，３ｂは高抵抗であるものの、隣接間隔部
ab，bcの幅が数10μmであるため、光活性層３
ａ，３ｂは第１電極層２ａと２ｂ及び第１電極層
２ｂと２ｃを短絡する短絡抵抗成分となつてしま
い、光電変換出力に悪影響を及ぼす。 Therefore, although the photoactive layers 3a and 3b made of fumorphous semiconductors have high resistance, the adjacent spaced parts
Since the widths of ab and bc are several tens of μm, the photoactive layer 3
a and 3b become short-circuit resistance components that short-circuit the first electrode layers 2a and 2b and the first electrode layers 2b and 2c, which adversely affects the photoelectric conversion output.
斯る欠点を解決するには、隣接間隔部ab，bc
の幅を大きくすればよいものの、この場合光起電
力装置全体の大きさが大きくなつてしまう。 To solve this drawback, adjacent spacing parts ab, bc
Although it is possible to increase the width of the photovoltaic device, the overall size of the photovoltaic device increases in this case.
(ニ) 問題点を解決するための手段
本考案は、上記問題点を解決すべくなされたも
のであつて、絶縁表面を有する基板と、該基板の
絶縁表面に並置された複数の第１電極層と、該第
１電極層の隣接間隔部及びこの隣接間隔部を挟ん
で対向する第１電極層の端部の少なくとも一方を
覆う絶縁層と、上記第１電極層の及びその一方の
隣りの絶縁層の上に形成された光活性層と、該光
活性層上から一方の隣りの第１電極層上まで延在
して形成された第２電極層とを備えたことを特徴
とする。(d) Means for solving the problems The present invention was made to solve the above problems, and includes a substrate having an insulating surface and a plurality of first electrodes arranged in parallel on the insulating surface of the substrate. an insulating layer that covers at least one of the adjacent spacing portion of the first electrode layer and the end portion of the first electrode layer facing each other across the adjacent spacing portion; It is characterized by comprising a photoactive layer formed on an insulating layer, and a second electrode layer formed extending from above the photoactive layer to above one adjacent first electrode layer.
(ホ) 作用
本考案によれば、基板の表面に形成された複数
の第１電極層の隣接間隔部に、この部分の第１電
極層の少なくとも一方の端部を覆う絶縁層を形成
することによつて、実質的に隣接間隔部の幅が大
きくなる。(E) Effect According to the present invention, an insulating layer is formed in the adjacent spaced part of the plurality of first electrode layers formed on the surface of the substrate, covering at least one end of the first electrode layer in this part. This substantially increases the width of the adjacent spacing.
(ヘ) 実施例
第１図は本考案の一実施例の要部を示す側面断
面図である。なお、第４図と同一部分には同一番
号を付して説明を省略する。６は本考案の特徴で
あり、基板１の表面に形成された第１電極層２
ａ，２ｂの隣接間隔部abに設けられ、第１電極
層２ａ，２ｂの端部を覆う幅100〜300μm程度の
絶縁層であり、斯る絶縁層はポリイミド、フツ素
系樹脂等の耐熱性樹脂、ガラスペースト、二酸化
シリコン、窒化シリコン等から成る。(F) Embodiment FIG. 1 is a side sectional view showing the main part of an embodiment of the present invention. Note that the same parts as in FIG. 4 are given the same numbers and their explanations will be omitted. 6 is a feature of the present invention, in which the first electrode layer 2 formed on the surface of the substrate 1
It is an insulating layer with a width of about 100 to 300 μm that is provided in the adjacent interval ab of the first electrode layers 2a and 2b and covers the ends of the first electrode layers 2a and 2b, and the insulating layer is made of heat-resistant material such as polyimide or fluorine resin. Consists of resin, glass paste, silicon dioxide, silicon nitride, etc.
従つて、第１電極層２ａ及び２ｂの間の隣接間
隔部abは、実質的に絶縁層６の幅に拡大された
こととなり、絶縁層６上に跨つて第１電極層２ａ
上から第１電極層２ｂの端部にまで形成された光
活性層３ａは、第１電極層２ａと２ｂとを短絡す
る短絡抵抗とほとんどなり得ず、短絡電流の発生
が防止される。 Therefore, the adjacent gap ab between the first electrode layers 2a and 2b is substantially expanded to the width of the insulating layer 6, and the first electrode layer 2a straddles the insulating layer 6.
The photoactive layer 3a formed from above to the end of the first electrode layer 2b hardly becomes a short-circuit resistance that short-circuits the first electrode layers 2a and 2b, and generation of short-circuit current is prevented.
第２図は本考案の一実施例（実線）と従来例
（破線）との−特性を示す特性図である。図
から明らかなように、本考案によれば−特性
が改善されている。 FIG. 2 is a characteristic diagram showing the characteristics of an embodiment of the present invention (solid line) and a conventional example (broken line). As is clear from the figure, according to the present invention, the characteristics are improved.
(ト) 考案の効果
本考案によれば、基板上に形成された複数の電
極層の隣接間隔部に、この部分の第１電極層の少
なくとも一方の端部を覆う絶縁膜を形成したの
で、実際の隣接間隔部を大きくすることなく、短
絡電流を防止し、出力特性を改善することができ
る。(g) Effects of the invention According to the invention, since an insulating film is formed in the space between adjacent electrode layers formed on the substrate, covering at least one end of the first electrode layer in this part, Short circuit current can be prevented and output characteristics can be improved without increasing the actual adjacent spacing.
第１図は本考案の一実施例を示す要部断面図、
第２図は本考案と従来例との−特性を示す特
性図、第３図は従来例を示す平面図、第４図はそ
の−線断面図であり、１は基板、２ａ〜２ｃ
は第１電極層、３ａ〜３ｃは光活性層、６は絶縁
層である。
FIG. 1 is a cross-sectional view of essential parts showing an embodiment of the present invention;
FIG. 2 is a characteristic diagram showing the characteristics of the present invention and a conventional example, FIG. 3 is a plan view showing the conventional example, and FIG.
is a first electrode layer, 3a to 3c are photoactive layers, and 6 is an insulating layer.
Claims (1)
並置された複数の第１電極層と、該第１電極層の
隣接間隔部及びこの隣接間隔部を挟んで対向する
第１電極層の端部の少なくとも一方を覆う絶縁層
と、上記第１電極層及びその一方の隣りの絶縁層
の上に形成された光活性層と、該光活性層上から
一方の隣りの第１電極層上まで延在して形成され
た第２電極層とを備えたことを特徴とする光起電
力装置。 A substrate having an insulating surface, a plurality of first electrode layers juxtaposed on the insulating surface of the substrate, adjacent spacing portions of the first electrode layers, and end portions of the first electrode layers facing each other across the adjacent spacing portions. an insulating layer covering at least one of the first electrode layer and the insulating layer adjacent to the first electrode layer, and a photoactive layer extending from above the photoactive layer to above the first electrode layer adjacent to the first electrode layer. 1. A photovoltaic device comprising: a second electrode layer formed in the same manner as above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5940987U JPH0525253Y2 (en) | 1987-04-20 | 1987-04-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5940987U JPH0525253Y2 (en) | 1987-04-20 | 1987-04-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63165865U JPS63165865U (en) | 1988-10-28 |
| JPH0525253Y2 true JPH0525253Y2 (en) | 1993-06-25 |
Family
ID=30890876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5940987U Expired - Lifetime JPH0525253Y2 (en) | 1987-04-20 | 1987-04-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0525253Y2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5902592B2 (en) * | 2012-09-24 | 2016-04-13 | 京セラ株式会社 | Method for manufacturing photoelectric conversion device |
| JP2016111310A (en) * | 2014-11-28 | 2016-06-20 | 京セラ株式会社 | Photoelectric conversion device |
| JP2016157805A (en) * | 2015-02-24 | 2016-09-01 | 京セラ株式会社 | Photoelectric conversion device |
-
1987
- 1987-04-20 JP JP5940987U patent/JPH0525253Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63165865U (en) | 1988-10-28 |
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