JPS63261883A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS63261883A JPS63261883A JP62096780A JP9678087A JPS63261883A JP S63261883 A JPS63261883 A JP S63261883A JP 62096780 A JP62096780 A JP 62096780A JP 9678087 A JP9678087 A JP 9678087A JP S63261883 A JPS63261883 A JP S63261883A
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- substrate
- electrode
- eliminated
- photovoltaic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims abstract description 34
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 22
- 238000000926 separation method Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000010248 power generation Methods 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- MZFIXCCGFYSQSS-UHFFFAOYSA-N silver titanium Chemical compound [Ti].[Ag] MZFIXCCGFYSQSS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は光照射により電力を発生する光起電力装置の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a photovoltaic device that generates electric power by irradiation with light.
第１図は、米国特許第４，２８１，２０８号に開示され
、既に実用化されている光起電力装置の基本構造を示す
模式図である。ガラス、耐熱プラスチック等のように絶
縁性及び透光性を有する基板１上に、５ｎ０２ 、 Ｉ
ＴＯ等の透光性酸化物導電体からなり、透光性を有する
第１電極膜２ａ、２ｂ、２ｃ・・・が一定間隔にて被着
されている。また、各第１電極膜２ａ、２ｂ。FIG. 1 is a schematic diagram showing the basic structure of a photovoltaic device that is disclosed in US Pat. No. 4,281,208 and has already been put into practical use. 5n02, I on a substrate 1 having insulation and translucency such as glass or heat-resistant plastic
First electrode films 2a, 2b, 2c, . . . made of a translucent oxide conductor such as TO and having translucent properties are deposited at regular intervals. Moreover, each first electrode film 2a, 2b.
２ｃ・・・上には非晶質シリコン等の膜状非晶質半導体
からなる光活性層３ａ、３ｂ、３ｃ・・・が重畳被着さ
れている。更に、各光活性層３ａ ＋ ３ｂ ＋ ３ｃ
・・・上には、ＡＩ等のオーミック金属からなる裏面側
の第２電極膜４ａ。Photoactive layers 3a, 3b, 3c, . . . made of a film-like amorphous semiconductor such as amorphous silicon are superimposed and deposited on 2c. Furthermore, each photoactive layer 3a + 3b + 3c
. . . On top is a second electrode film 4a on the back side made of an ohmic metal such as AI.
４ｂ、 ４ｃ・・・が、各右隣の第１電極膜２ａ、２ｂ
、２ｃ・・・に部分的に接続して、重畳被着されている
。そして、このような第１電極膜２ａ、２ｂ、２Ｃ・・
・、光活性層３ ａ ＋ ３ ｂ ＋３ｃ・・・及び第
２電極膜４ａ、４ｂ、４ｃ・・・の各積層体により、光
電変換素子５ａ、５ｂ、５ｃ・・・が構成されており、
各光電変換素子５ａ、５ｂ、５ｃ・・・は電気的に直列
接続されている。4b, 4c... are the first electrode films 2a, 2b on the right side, respectively.
, 2c, . . . and are overlapped and attached. Then, such first electrode films 2a, 2b, 2C...
・The photoelectric conversion elements 5a, 5b, 5c... are constituted by each laminate of the photoactive layer 3a + 3b +3c... and the second electrode films 4a, 4b, 4c...
The photoelectric conversion elements 5a, 5b, 5c, . . . are electrically connected in series.
各光活性層３ａ、３ｂ、３ｃ・・・は、その内部に例え
、ば層面に平行なＰＩＮ接合を含み、従って基板ｌから
第１電極膜２ａ、２ｂ、２ｃ・・・を通って光が入射さ
れると、光起電力を発生する。各光活性層３ａ、 ３ｂ
、 ３（：・・・内において発生した光起電力は、第２
電極膜４ａ、４ｂ、４ｃ・・・と右隣の第１電極膜２ａ
＋２ｂ、２ｃ・・・との接続により、直列的に加算され
て外部に取出される。Each photoactive layer 3a, 3b, 3c... includes a PIN junction parallel to the layer plane, for example, inside thereof, so that light passes from the substrate l through the first electrode film 2a, 2b, 2c... When it is incident, it generates a photovoltaic force. Each photoactive layer 3a, 3b
, 3(:... The photovoltaic force generated within the second
Electrode films 4a, 4b, 4c... and the first electrode film 2a on the right
By connecting with +2b, 2c, . . . , they are added in series and taken out to the outside.
そして、かかる構成の光起電力装置を製造する場合にお
ける各膜の分離形成には、細密加工性に優れている写真
蝕刻技術が用いられている。この技術による場合、基板
１上全面への第１電極膜の被着工程と、フォトレジスト
及びエツチングによる各個別の第１電極膜２ａ、 ２ｂ
、 ２ｃ・・・の分離、即ち、各第１電極膜２ａ、 ２
ｂ、 ２ｃ・・・の隣接間隔部の除去工程と、これら各
第１電極膜上を含む基板１上全面への光活性層の被着工
程と、フォトレジスト及びエツチングによる各個別の光
活性Ｎ３ａ、３ｂ、３ｃ・・・の分離、即ち、各光活性
層３ａ、３ｂ、３ｃ・・・の隣接間隔部の除去工程と、
これら各第１電極膜上及び各光活性層上を含む基板１上
全面への第２電極膜の被着工程と、フォトレジスト及び
エツチングによる第２電極Ｍ’Ｊ４ａ、４ｂ、４ｃ・・
・の分離工程とを順次繰ることになる。When manufacturing a photovoltaic device having such a configuration, photolithography, which is excellent in precision processing, is used to separate and form each film. In the case of this technique, a step of depositing the first electrode film on the entire surface of the substrate 1, and each individual first electrode film 2a, 2b by photoresist and etching are performed.
, 2c..., that is, each first electrode film 2a, 2
b, 2c, . , 3b, 3c, .
A step of depositing a second electrode film on the entire surface of the substrate 1 including on each of the first electrode films and on each photoactive layer, and second electrodes M'J4a, 4b, 4c, etc. by photoresist and etching.
・separation steps are repeated sequentially.
しかしながら、写真蝕刻技術は細密加工の点では優れて
いるが、蝕刻パターンを規定するフォトレジストのピン
ホールまたは周縁における剥離に伴う欠陥が光活性層に
生じやすいという問題点がある。However, although the photo-etching technique is superior in terms of fine processing, it has the problem that defects are likely to occur in the photoactive layer due to pinholes or peeling at the periphery of the photoresist that defines the etching pattern.
また、特開昭５７−１２５６８号公報に開示された先行
技術は、レーザビームの照射による膜の焼き切りにて前
記隣接間隔部を除去するものであり、写真蝕刻技術では
必要なフォトレジスト、即ちウェットプロセスを一切使
わず細密加工性に優れたその技法は前述の問題点を解決
するために極めて有効である。Furthermore, in the prior art disclosed in Japanese Patent Application Laid-Open No. 57-12568, the adjacent spaced portions are removed by burning off the film by laser beam irradiation. This technique, which does not require any process and has excellent precision machinability, is extremely effective in solving the above-mentioned problems.
ところが、レーザビームの照射にて隣接間隔部を除去す
る場合においても、以下に示す問題点を含んでいる。However, even when the adjacent spaced portions are removed by laser beam irradiation, the following problems are involved.
部ち、第１電極膜の被着工程または第２電極膜の被着工
程において、第１電極膜または第２電極膜が基板の上面
から側面に回り込んで被着されることがあり、このよう
な場合には、レーザビームを照射して第ｔＳ極膜及び第
２電極膜を基板上面において電気的に分離したとしても
、基板側面に被着された第１電極膜及び第２電極膜を介
して短絡することになって電気的な分離が不良であると
いう問題点があった。However, in the process of depositing the first electrode film or the process of depositing the second electrode film, the first electrode film or the second electrode film may be deposited from the top surface of the substrate to the side surface. In such a case, even if the tS electrode film and the second electrode film are electrically separated on the upper surface of the substrate by irradiating the laser beam, the first electrode film and the second electrode film deposited on the side surface of the substrate may be separated. There was a problem in that electrical isolation was poor due to short circuits caused by the wires.
本発明はかかる事情に鑑みてなされたものであり、基板
上面端部に被着された第１＠極膜をエネルギビームを用
いて所定の幅にて除去して第１電極膜を分離し、次いで
、所定の幅にて除去された領域内における第２電極膜を
エネルギビームを用いて除去して第２電極膜を分離する
ことにより、基板側面に被着された第１電極膜及び第２
電極膜を介して短絡することを防止できる光起電力装置
の製造方法を提供することを目的とする。The present invention has been made in view of the above circumstances, and includes separating the first electrode film by removing the first @ electrode film attached to the edge of the upper surface of the substrate in a predetermined width using an energy beam, Next, the second electrode film in the area removed with a predetermined width is removed using an energy beam to separate the second electrode film, thereby removing the first electrode film and the second electrode film adhered to the side surface of the substrate.
It is an object of the present invention to provide a method for manufacturing a photovoltaic device that can prevent short circuits through electrode films.
本発明に係る光起電力装置の製造方法は、第１電極膜、
光活性層及び第２電極膜を基板上にこの順に積層して構
成される複数の光電変換素子を有し、各光電変換素子を
電気的に直列接続せしめた光起電力装置の製造方法であ
って、基板上に被着された第１電極膜にエネルギビーム
を照射して素子毎に第１電極膜を分離する工程と、光活
性層上に被着された第２電極膜にエネルギビームを照射
して素子毎に第２電極膜を分離する工程とを含む製造方
法において、第１電極膜を分離する工程にて、少なくと
も光電変換素子の直列接続方向の基板端部にエネルギビ
ームを照射して第１電極膜を所定の幅で除去し、第２電
極膜を分離する工程にて、第１電極膜が所定の幅で除去
された領域内の第２電極膜にエネルギビームを照射して
第２電極膜を除去することを特徴とする。The method for manufacturing a photovoltaic device according to the present invention includes a first electrode film,
A method for manufacturing a photovoltaic device having a plurality of photoelectric conversion elements configured by laminating a photoactive layer and a second electrode film in this order on a substrate, and each photoelectric conversion element being electrically connected in series. The first electrode film deposited on the substrate is irradiated with an energy beam to separate the first electrode film for each element, and the second electrode film deposited on the photoactive layer is irradiated with an energy beam. In the manufacturing method including the step of separating the second electrode film for each element by irradiation, in the step of separating the first electrode film, the energy beam is irradiated to at least an end of the substrate in a direction in which the photoelectric conversion elements are connected in series. In the step of removing the first electrode film with a predetermined width and separating the second electrode film, an energy beam is irradiated to the second electrode film in the area where the first electrode film has been removed with a predetermined width. It is characterized by removing the second electrode film.
本発明方法ではまず、第１電極膜を分離する工程にて、
基板端部にエネルギビームを照射して第１電極膜を所定
の幅で除去する。次に、第２電極膜を分離する工程にて
、第１電極膜が除去された領域内の第２電極膜にエネル
ギビームを照射して第２電極膜を除去する。そうすると
、基板側面に被着された第１電極膜及び第２電極膜が電
気的に短絡しない。In the method of the present invention, first, in the step of separating the first electrode film,
The first electrode film is removed by a predetermined width by irradiating the edge of the substrate with an energy beam. Next, in the step of separating the second electrode film, the second electrode film in the area where the first electrode film has been removed is irradiated with an energy beam to remove the second electrode film. Then, the first electrode film and the second electrode film deposited on the side surface of the substrate will not be electrically short-circuited.
以下、本発明をその実施例を示す図面に基づいて説明す
る。第２図〜第７図は本発明方法を工程順に示した断面
模式図、第８図は本発明方法にて製造された光起電力装
置の上面模式図、第９．１０゜１１図は夫々第８図のｉ
ｘ−量Ｘ線、ｘ−Ｘ線、 ｘｉ−ｘｉ線における断面模
式図であり、ｉｘ −ｉｘ線は各素子の直列接続方向、
ｘ −Ｘ線及びｘ ｉ −ｘ ｉ線は各素子の直列接続
方向に垂直な方向を示している。Hereinafter, the present invention will be explained based on drawings showing embodiments thereof. Figures 2 to 7 are schematic cross-sectional views showing the method of the present invention in the order of steps, Figure 8 is a schematic top view of a photovoltaic device manufactured by the method of the present invention, and Figures 9, 10 and 11 are respectively i in Figure 8
It is a cross-sectional schematic diagram taken along the x-quantity
The x-X line and the x i -x i line indicate directions perpendicular to the series connection direction of each element.
第２図の工程では、厚さＩＮ〜３龍９面稍１０ｃｍＸ
ＩＱｃｍ〜ｌｍＸ１ｍ程度の透明なガラスからなる基板
１上全面に、厚さ２０００人〜５０００人の５ｎ０２か
らなる透明電極膜２が被着される。In the process shown in Figure 2, the thickness is IN ~ 3 dragons 9 sides 10 cm
A transparent electrode film 2 made of 5n02 with a thickness of 2,000 to 5,000 thick is deposited on the entire surface of a substrate 1 made of transparent glass with a size of about IQcm to 1m x 1m.
第３図の工程では、隣接間隔部８がレーザビームの照射
により除去されて、個別の各第１電極２ ａ ＋２ｂ、
２ｃ・・・が分離形成される。使用されるレーザビー
ムは基Ｆｉｌにほとんど吸収されない波長を有するもの
が適当であり、ガラスからなる基板１に対しては、０．
３５μｍ〜２．５μｍの波長を有するパルス発振型が好
ましい。かかる好適な実施例は、波長約１．０６μｍ、
エネルギ密度１３Ｊ／ｅｌ＋！、パルス周波数３ＫＨｚ
のＮｄ：ＹＡＧレーザであり、隣接間隔部８の寸法（Ｌ
ｌ）は約１００μｍに設定される。In the process shown in FIG. 3, the adjacent spacing portions 8 are removed by laser beam irradiation, and each of the individual first electrodes 2a + 2b,
2c... is separated and formed. It is appropriate that the laser beam used has a wavelength that is hardly absorbed by the base film, and for the substrate 1 made of glass.
A pulse oscillation type having a wavelength of 35 μm to 2.5 μm is preferable. Such a preferred embodiment has a wavelength of about 1.06 μm;
Energy density 13J/el+! , pulse frequency 3KHz
This is an Nd:YAG laser with a dimension (L
l) is set to approximately 100 μm.
個別の各第１電極膜２ａ、 ２ｂ、 ２ｃ・・・を分離
形成した後、素子の直列接続方向の基板１の両端部及び
これに垂直な方向の基Ｆｉ１の両端部に被着された第１
電極膜２を、前述のレーザビームと同様なレーザビーム
を照射して１０〜１０００μｍの幅で除去し、第１電極
膜除去部１２を形成する。次にレーザビームを照射して
、第８図の２０．２０に示す如く基板の２隅角部に一例
の集電極を形成すると共に、該集電極２０．２０にレチ
クル２１．２１を形成する。なおレチクル２１．２１は
、レーザビームを用いた各校の分離工程におけるレーザ
加工ラインの位置合わせ用として形成される。なお、上
述した基板端部の第、１電極１！ｉ！除去工程及び−側
の集電極、レチクル形成工程を、第１電極膜の分離工程
に先んじて行ってもよい、また、本実施例では基板のす
べての端部において第１電極膜を除去したが、これに限
らず、素子の直列接続方向の基板の両端部においてのみ
第・１電極膜が除去されていてもよい。After separately forming the individual first electrode films 2a, 2b, 2c..., the first electrode films 2a, 2b, 2c, etc. are deposited on both ends of the substrate 1 in the direction in which the elements are connected in series and on both ends of the base Fi1 in the direction perpendicular thereto. 1
The electrode film 2 is removed in a width of 10 to 1000 μm by irradiation with a laser beam similar to the laser beam described above to form a first electrode film removed portion 12 . Next, a laser beam is irradiated to form collector electrodes at two corners of the substrate as shown at 20.20 in FIG. 8, and to form a reticle 21.21 on the collector electrodes 20.20. Note that the reticle 21.21 is formed for positioning the laser processing line in the separation process of each school using a laser beam. Note that the first electrode 1 at the end of the substrate described above! i! The removal step and the − side collector electrode and reticle formation step may be performed prior to the separation step of the first electrode film.Also, in this example, the first electrode film was removed at all edges of the substrate. However, the present invention is not limited to this, and the first electrode film may be removed only at both ends of the substrate in the direction in which the elements are connected in series.
第４図の工程では、各第１電極股２ａ、２ｂ、２ｃ・・
・の表面を含んで基板１上全面に光電変換素子に有効に
寄与する厚さ３０００〜７０００人の非晶質シリコン等
の光活性層３が被着される。かかる光活性層３はその内
部に膜面に平行なＰＩＮ接合を含み、まずＰ型の非晶質
シリコンカーバイドが被着され、次いで■型及びＮ型の
非晶シリコンが順次積層被着されている。In the process shown in FIG. 4, each first electrode crotch 2a, 2b, 2c...
A photoactive layer 3 of amorphous silicon or the like having a thickness of 3,000 to 7,000 thick, which effectively contributes to the photoelectric conversion element, is deposited on the entire surface of the substrate 1, including the surface of the . Such a photoactive layer 3 includes a PIN junction parallel to the film surface inside thereof, and P-type amorphous silicon carbide is deposited first, and then ■-type and N-type amorphous silicon are sequentially deposited in a layered manner. There is.
第５図の工程では、隣接間隔部９がレーザビームの照射
により除去されて、個別の各光活性層３ａ。In the step of FIG. 5, adjacent spacings 9 are removed by laser beam irradiation to separate each photoactive layer 3a.
３ｂ、 ３ｃ・・・が分離形成される。3b, 3c, etc. are formed separately.
またこの光活性層の分離工程の前工程または後工程とし
て、集電極を形成するための光活性層除去部１５．１６
が形成される。なお、光活性層除去部１６は一電極側な
ので電気的には必ずしも形成する必要はないが、電極へ
の半田付けを強固にし、前記レチクル２Ｌ ２１を明瞭
にするという効果を有する。In addition, as a pre-process or post-process of this photoactive layer separation process, a photoactive layer removal part 15.16 for forming a collector electrode is provided.
is formed. Note that since the photoactive layer removed portion 16 is on the side of one electrode, it is not necessarily necessary to form it electrically, but it has the effect of strengthening soldering to the electrode and making the reticle 2L 21 clear.
第６図の工程では、各個別に分離された光活性層３ａ、
３ｂ、３ｃ・・・及び第１電極膜２ａ、２ｂ、２ｃ・・
・の各露出部分を含んで基板１上全面に約２０００Å以
上の厚さのアルミニウム単層構造、或いは該アルミニウ
ムにチタンまたはチタン銀を積層した二層構造、或いは
かかる二層構造を二重に禎み重ねた構造をなす第２電極
膜４が被着される。In the process of FIG. 6, each individually separated photoactive layer 3a,
3b, 3c... and first electrode films 2a, 2b, 2c...
・A single-layer aluminum structure with a thickness of about 2000 Å or more over the entire surface of the substrate 1 including each exposed portion, or a two-layer structure in which titanium or titanium-silver is laminated on the aluminum, or a double layer structure of such a two-layer structure. A second electrode film 4 having an overlapping structure is deposited.
第７図の工程では、各光活性Ｊｉ＃３ａ、３ｂ、３ｃ・
・・上の端面近傍において、前記第２電極膜４が、第５
図の光活性層３の分離工程と同じくレーザビームの照射
により各個別の第２電極膜４ａ、 ４ｂ、 ４ｃ・・・
に分離される。In the process shown in FIG. 7, each photoactive Ji#3a, 3b, 3c.
...In the vicinity of the upper end surface, the second electrode film 4 has a fifth
As in the separation process of the photoactive layer 3 shown in the figure, the individual second electrode films 4a, 4b, 4c, . . . are separated by laser beam irradiation.
separated into
またこの第２電極膜４ａ、 ４ｂ、 ４ｃ・・・の分離
工程の前工程または後工程として、レーザビームの照射
により、基板端部の２辺（第８図における上下の２辺）
における前記第１電極膜除去部１２における第２電極膜
を、第１電極膜除去部１２よりも狭幅にて除去し、第２
電極膜除去部１４を形成すると共に、第８図１９．第９
図４８の如く＋側の集電極を形成する。In addition, as a pre- or post-process of separating the second electrode films 4a, 4b, 4c, etc., two sides of the substrate edge (the two upper and lower sides in FIG. 8) are irradiated with a laser beam.
The second electrode film in the first electrode film removal section 12 in is removed with a width narrower than that of the first electrode film removal section 12, and the second electrode film in the first electrode film removal section 12 is removed.
In addition to forming the electrode film removed portion 14, the process shown in FIG. 9th
A collector electrode on the + side is formed as shown in FIG.
そして、各個別に分離された第１Ｍ極膜２ａ、２ｂ。Then, the first M pole films 2a and 2b are individually separated.
２ｃｍ、光活性Ｎ３ａ、３ｂ、３ｃ・・・及び第２電極
膜４ａ＋ ４ｂ。2cm, photoactive N3a, 3b, 3c... and second electrode film 4a+4b.
４ｃ・・・の積層体からなる光電変換素子５ａ、５ｂ、
５ｃ・・・が、基板１上において電気的に直列接続され
て形成されることになる。Photoelectric conversion elements 5a, 5b, which are made of a laminate of 4c...
5c... are formed electrically connected in series on the substrate 1.
ここで、基板端部において第２電極膜除去部１４が第１
電極Ｍ’Ｊ除去部１２に含まれる状態で形成されている
ので、基板側面に被着される第１電極膜２２または第２
電極１５１ｉ２４を介して電気的な短絡が生しない。な
おこの場合、第１電極膜除去によって失われる有効発電
領域はわずかであるので、発電能力の低下は実質上問題
ない。Here, at the end of the substrate, the second electrode film removal section 14
Since it is formed in a state included in the electrode M'J removal part 12, the first electrode film 22 or the second
No electrical short circuit occurs through the electrode 151i24. Note that in this case, since the effective power generation area lost by removing the first electrode film is small, there is no substantial problem with the reduction in power generation capacity.
また、第１電極膜を分離する際に集電極２０にレチクル
２１を形成するので、それ以後のレーザビーム加工にお
いて加工ラインの位置合わせが容易に行なえる。Furthermore, since the reticle 21 is formed on the collector electrode 20 when separating the first electrode film, the processing line can be easily aligned in the subsequent laser beam processing.
更にこのレチクル２１の形成及び集電極１９．２０の形
成を、第１電極膜または第２電極膜の分離工程と同時に
レーザビームの照射により行うので、新たな工程を付は
加えることなしにレチクル及び集電極を形成することが
できる。Furthermore, since the formation of the reticle 21 and the formation of the collector electrodes 19 and 20 are performed by laser beam irradiation at the same time as the separation process of the first electrode film or the second electrode film, the reticle and the collector electrodes 19 and 20 are formed without adding any new process. A collector electrode can be formed.
なお本実施例ではエネルギビームとしてレーザビームを
利用する場合について説明したが、これに限らず電子ビ
ーム等の他のエネルギビームを利用してもよいことは勿
論である。In this embodiment, a case has been described in which a laser beam is used as the energy beam, but the present invention is not limited to this, and it goes without saying that other energy beams such as an electron beam may be used.
（効果〕
以上詳述した如く本発明方法では、基板端部の少なくと
も２辺において被着された第１電極膜を１０〜１０００
μｍの幅で除去し、更にこの第１電極膜除去部内におけ
る第２電極膜を除去するので、基板側面に被着した第１
電極膜及び第２電極膜を介する電気的な短絡を防止する
ことができる。(Effects) As detailed above, in the method of the present invention, the first electrode film deposited on at least two sides of the substrate edge is
Since the second electrode film in the first electrode film removed portion is removed in a width of μm, the first electrode film adhered to the side surface of the substrate is removed.
Electrical short circuits via the electrode film and the second electrode film can be prevented.
第１図は光起電力装置の基本構造を示す模式図、第２図
〜第７図は本発明方法を工程順に示した模式図、第８図
は本発明方法にて製造された光起電力装置の上面模式図
、第９．１０．１１図は同じく断面模式図である。
１・・・基板 ２ａ、２ｂ、’ｌｃ−・第１電極膜 ３
ａ、３ｂ、３ｃｍ光活性層 ４ａ、 ４ｂ、 ４ｃｍ第
２電極膜 ５ａ、５ｂ、５ｃｍ光電変換素子 １９・・
・＋側集電極 ２０・・・−（，１！＋１集電極２１・
・・レチクルFig. 1 is a schematic diagram showing the basic structure of a photovoltaic device, Figs. 2 to 7 are schematic diagrams showing the method of the present invention in order of steps, and Fig. 8 is a photovoltaic power produced by the method of the present invention. The schematic top view of the device and Figures 9, 10 and 11 are also schematic cross-sectional views. 1...Substrate 2a, 2b,'lc--first electrode film 3
a, 3b, 3cm photoactive layer 4a, 4b, 4cm second electrode film 5a, 5b, 5cm photoelectric conversion element 19...
・+ side collector electrode 20...-(,1!+1 collector electrode 21・
・Reticle
Claims (1)
の順に積層して構成される複数の光電変換素子を有し、
各光電変換素子を電気的に直列接続せしめた光起電力装
置の製造方法であって、基板上に被着された第１電極膜
にエネルギビームを照射して素子毎に第１電極膜を分離
する工程と、光活性層上に被着された第２電極膜にエネ
ルギビームを照射して素子毎に第２電極膜を分離する工
程とを含む製造方法において、 第１電極膜を分離する工程にて、少なくと も光電変換素子の直列接続方向の基板端部にエネルギビ
ームを照射して第１電極膜を所定の幅で除去し、第２電
極膜を分離する工程にて、第１電極膜が所定の幅で除去
された領域内の第２電極膜にエネルギビームを照射して
第２電極膜を除去することを特徴とする光起電力装置の
製造方法。 ２、前記所定の幅は１０〜１０００μｍである特許請求
の範囲第１項記載の光起電力装置の製造方法。 ３、前記第１電極膜を分離する工程及び前記第２電極膜
を分離する工程において、エネルギビームの照射により
、光起電力装置の起電力を取り出すための集電極を形成
する特許請求の範囲第１項記載の光起電力装置の製造方
法。 ４、前記第１電極膜を分離する工程において、エネルギ
ビームの照射により、基板の位置合わせを行うためのレ
チクルを前記集電極に形成する特許請求の範囲第３項記
載の光起電力装置の製造方法。[Claims] 1. A plurality of photoelectric conversion elements configured by laminating a first electrode film, a photoactive layer, and a second electrode film on a substrate in this order;
A method for manufacturing a photovoltaic device in which photoelectric conversion elements are electrically connected in series, the first electrode film being separated for each element by irradiating the first electrode film deposited on the substrate with an energy beam. and separating the second electrode film for each element by irradiating the second electrode film deposited on the photoactive layer with an energy beam, the step of separating the first electrode film. In the step of removing the first electrode film in a predetermined width by irradiating at least the end of the substrate in the direction of series connection of the photoelectric conversion elements with a predetermined width, and separating the second electrode film, the first electrode film is removed. A method for manufacturing a photovoltaic device, characterized in that the second electrode film is removed by irradiating the second electrode film within a region removed with a predetermined width with an energy beam. 2. The method for manufacturing a photovoltaic device according to claim 1, wherein the predetermined width is 10 to 1000 μm. 3. In the step of separating the first electrode film and the step of separating the second electrode film, a collecting electrode for extracting the electromotive force of the photovoltaic device is formed by irradiation with an energy beam. A method for manufacturing a photovoltaic device according to item 1. 4. Manufacturing the photovoltaic device according to claim 3, wherein in the step of separating the first electrode film, a reticle for aligning the substrate is formed on the collector electrode by irradiation with an energy beam. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096780A JPH0815223B2 (en) | 1987-04-20 | 1987-04-20 | Photovoltaic device manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62096780A JPH0815223B2 (en) | 1987-04-20 | 1987-04-20 | Photovoltaic device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63261883A true JPS63261883A (en) | 1988-10-28 |
| JPH0815223B2 JPH0815223B2 (en) | 1996-02-14 |
Family
ID=14174150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62096780A Expired - Lifetime JPH0815223B2 (en) | 1987-04-20 | 1987-04-20 | Photovoltaic device manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0815223B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5935344A (en) * | 1995-10-26 | 1999-08-10 | Sanyo Electric Co., Ltd. | Photovoltaic element and manufacturing method thereof |
| WO2008038553A1 (en) | 2006-09-28 | 2008-04-03 | Sanyo Electric Co., Ltd. | Solar cell module |
| KR101011228B1 (en) * | 2008-08-27 | 2011-01-26 | 주식회사 티지솔라 | Solar cell and manufacturing method |
| KR101011222B1 (en) * | 2008-08-26 | 2011-01-26 | 주식회사 티지솔라 | Solar cell and manufacturing method |
| JP2012023180A (en) * | 2010-07-14 | 2012-02-02 | Fujifilm Corp | Substrate for electronic device and photoelectric conversion device equipped with substrate of the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603164A (en) * | 1983-06-21 | 1985-01-09 | Sanyo Electric Co Ltd | Method of manufacturing photovoltaic device |
| JPS61263172A (en) * | 1985-05-16 | 1986-11-21 | Fuji Electric Co Ltd | Manufacture of thin-film solar cell |
-
1987
- 1987-04-20 JP JP62096780A patent/JPH0815223B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS603164A (en) * | 1983-06-21 | 1985-01-09 | Sanyo Electric Co Ltd | Method of manufacturing photovoltaic device |
| JPS61263172A (en) * | 1985-05-16 | 1986-11-21 | Fuji Electric Co Ltd | Manufacture of thin-film solar cell |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5935344A (en) * | 1995-10-26 | 1999-08-10 | Sanyo Electric Co., Ltd. | Photovoltaic element and manufacturing method thereof |
| WO2008038553A1 (en) | 2006-09-28 | 2008-04-03 | Sanyo Electric Co., Ltd. | Solar cell module |
| KR101011222B1 (en) * | 2008-08-26 | 2011-01-26 | 주식회사 티지솔라 | Solar cell and manufacturing method |
| KR101011228B1 (en) * | 2008-08-27 | 2011-01-26 | 주식회사 티지솔라 | Solar cell and manufacturing method |
| JP2012023180A (en) * | 2010-07-14 | 2012-02-02 | Fujifilm Corp | Substrate for electronic device and photoelectric conversion device equipped with substrate of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0815223B2 (en) | 1996-02-14 |
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