JPS62256480A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS62256480A JPS62256480A JP61098762A JP9876286A JPS62256480A JP S62256480 A JPS62256480 A JP S62256480A JP 61098762 A JP61098762 A JP 61098762A JP 9876286 A JP9876286 A JP 9876286A JP S62256480 A JPS62256480 A JP S62256480A
- Authority
- JP
- Japan
- Prior art keywords
- power generation
- electrode
- amorphous semiconductor
- semiconductor layer
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000010248 power generation Methods 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 abstract description 4
- 239000011148 porous material Substances 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241001310793 Podium Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は太陽電池や光センサー等の非晶質半導体層を有
する光起電力装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to photovoltaic devices having an amorphous semiconductor layer, such as solar cells and optical sensors.
本発明者らは、先にレーザー照射により形成した接続用
開口部を通じて複数個の発電区域を直列接続する光起電
力装置を提案した。The present inventors previously proposed a photovoltaic device in which a plurality of power generation areas are connected in series through connection openings formed by laser irradiation.
第２図（ａ）はその光起電力装置の平面図であり、第２
図（ｂ）は同図（ａ）中Ａ−＾”線断面図であり、第２
図（ｃ）は同図（ａ）中Ｂ−Ｂ’線断面図であり、第２
図（ｄ）は同図（ａ）中ｃ−ｃ’線断面図である。FIG. 2(a) is a plan view of the photovoltaic device, and the second
Figure (b) is a cross-sectional view taken along the line A-^'' in Figure (a).
Figure (c) is a sectional view taken along the line B-B' in Figure (a).
Figure (d) is a sectional view taken along line c-c' in figure (a).
図中、１は絶縁基板であり、２ａ〜２ｃは第１電極であ
り、３は非晶質半導体層であり、４ａ〜４ｃは第２電極
である。In the figure, 1 is an insulating substrate, 2a to 2c are first electrodes, 3 is an amorphous semiconductor layer, and 4a to 4c are second electrodes.
絶縁基板１は透光性ガラス、セラミック、表面が絶縁処
理されたステンレス板等が使用される。The insulating substrate 1 is made of translucent glass, ceramic, a stainless steel plate whose surface is insulated, or the like.
該基板１の一生面にスパッタリング法やプラズマＣＶＤ
法で酸化錫（ＳｎＯ□）や酸化インジウム・錫（ＩＴｏ
）等から成る第１電極２ａ〜２ｃが夫々形成される。The entire surface of the substrate 1 is subjected to sputtering or plasma CVD.
tin oxide (SnO□) and indium tin oxide (ITo)
), etc., are respectively formed.
次に、基板１の一生面の略全域に亘り非晶質半導体層３
が形成される。該非晶質半導体層３は光照射により正孔
及び又は電子が発生されるようにＰ−Ｉ−Ｎ接合が施さ
れている０図示していないが、Ｐ層は１００〜２００
人、ＩＮは５０００〜７０００人、Ｎ層は３００〜７０
０人であり、非晶質半導体層３の厚みは約０．５〜０．
８μｍ程度である。Next, an amorphous semiconductor layer 3 is formed over substantially the entire surface of the substrate 1.
is formed. The amorphous semiconductor layer 3 is provided with a P-I-N junction so that holes and/or electrons are generated by light irradiation.
people, IN is 5000-7000 people, N layer is 300-70 people
The thickness of the amorphous semiconductor layer 3 is approximately 0.5 to 0.0.
It is about 8 μm.
次いて、基板１に配列形成した各第１電極２８〜２ｃ上
の非晶質半導体Ｎ３の一部に、配列方向に沿ってレーザ
ー照射により接続用開口部５８〜５Ｃが形成される。Next, connection openings 58 to 5C are formed in part of the amorphous semiconductor N3 on each of the first electrodes 28 to 2c arranged on the substrate 1 by laser irradiation along the arrangement direction.
接続用開口部５ａ〜５ｃはＮｄ−ＹＡＧレーザー照射に
よって非晶質半導体層３のみが吸収除去され、貫通され
ることにより、第１電極２ａ〜２Ｃが露出する。Only the amorphous semiconductor layer 3 is absorbed and removed by the Nd-YAG laser irradiation, and the first electrodes 2a to 2C are exposed through the connection openings 5a to 5c.
更に、非晶質半導体１ｉ３上に、略第１電極２ａ〜２ｃ
に対応するとともに接続用開口部５８〜５Ｃを露出する
切り欠は部４２ａ〜４２ｃを形成するように第２電極４
８〜４ｃが被着形成される。第２電極４ａ〜４ｃは壇＝
塩抵抗加熱法、スパッタリング法で形成されたニッケル
（Ｎｉ）、アルミニウム（ＡＩ）、チタン（Ｔｉ）、ク
ロム（Ｃｒ）等である。Further, approximately first electrodes 2a to 2c are provided on the amorphous semiconductor 1i3.
The notches that correspond to the connection openings 58 to 5C and expose the connection openings 58 to 5C are formed in the second electrode 4 so as to form portions 42a to 42c.
8 to 4c are deposited and formed. The second electrodes 4a to 4c are podium =
These include nickel (Ni), aluminum (AI), titanium (Ti), chromium (Cr), etc. formed by a salt resistance heating method or a sputtering method.
これにより発電区域ａ”−’ｃが基板１上に形成される
。As a result, power generation areas a''-'c are formed on the substrate 1.
該発電区域ａ−ｃの電気的接続は前記第２電極４８〜４
ｃを形成する際にマスクの操作またはエツチングの処理
によって同時に隣接する発電区域ａ、ｂの切り欠は部４
２ａ、 ４２ｂにまで延びる接続用延長部４１ｂ〜４１
ｃを設けることにより行われる。即ち、発電区域ａの第
１電極２ａは接続用開口部５ａを通じて発電区域すの第
２電極の接続用延長部４１ｂに、発電区域すの第１電極
２ｂは接続用開口部５ｂを通じて発電区域Ｃの第２電極
の接続用延長部４１ｂに夫々接続し、各発電区域ａ−ｃ
の直列接続が達成される。Electrical connections between the power generation areas a-c are made using the second electrodes 48 to 4.
When forming part 4, the notches of adjacent power generation areas a and b are simultaneously formed by mask operation or etching process.
Connection extensions 41b to 41 extending to 2a and 42b
This is done by providing c. That is, the first electrode 2a of the power generation area A is connected to the connection extension part 41b of the second electrode of the power generation area A through the connection opening 5a, and the first electrode 2b of the power generation area A is connected to the power generation area C through the connection opening 5b. are connected to the connecting extensions 41b of the second electrodes of the respective power generation areas a-c.
series connection is achieved.
そして、直列的に電気接続された各発電区域ａ〜Ｃを有
する光起電力装置の出力は、発電区域ａの第２電極４ａ
と１発電区域Ｃの切り欠は部４２ｃで第１電極２ｃが露
出する接続用開口部５Ｃ上に形成された接続端子部６Ｃ
との間から得られる。The output of the photovoltaic device having each of the power generation areas a to C electrically connected in series is determined by the second electrode 4a of the power generation area a.
The notch of the first power generation area C is a connection terminal portion 6C formed on the connection opening 5C through which the first electrode 2c is exposed at the portion 42c.
It can be obtained from between.
第４図は従来の光起電力装置の接続部の部分拡大図であ
る。即ち、第２図（ａ）の光起電力装置において丸で囲
んだ部分に相当する。FIG. 4 is a partially enlarged view of a connecting portion of a conventional photovoltaic device. That is, it corresponds to the circled part in the photovoltaic device of FIG. 2(a).
接続用開口部５ｂは非晶質半導体Ｗｉ３を貫通する巾ｄ
が２０〜２００ μの直線状の溝５２で構成されている
。これは、Ｎｄ−ＹＡＧレーザーの発振のＱスイッチの
周波数を２ＫＨｚ、基板１に対するレーザー走査速度を
１００＋ｎｍ ／ｓｅｅに設定することにより形成され
る本発明者らは１０ｃｍ角の製造用ガラス基板上に４個
の発電区域が直列接続した上述の光起電力装置した。The connection opening 5b has a width d passing through the amorphous semiconductor Wi3.
It is composed of linear grooves 52 with a diameter of 20 to 200 μm. This is formed by setting the Q-switch frequency of the Nd-YAG laser oscillation to 2 KHz and the laser scanning speed for the substrate 1 to 100+nm/see. The above-mentioned photovoltaic device has several power generating sections connected in series.
（次頁に続く）
（前頁の表１の続き）
表１から考察できる様に、開放電圧（ｖｏｃ）が１゜２
８〜２．６４Ｖとばらつきが大きく、さらに曲線因子（
ＦＦ）が低い。特に資料番号２５．２９，３０，３２，
３５．３７，３８゜４２は開放電圧（ｖｏｃ）が２．Ｏ
ｖに満たない。さらに２１個の光起電力装置全体の曲線
因子（ＰＦ）の平均が０゜６以下である。(Continued on the next page) (Continued from Table 1 on the previous page) As can be considered from Table 1, the open circuit voltage (voc) is 1°2
There is a large variation between 8 and 2.64V, and the fill factor (
FF) is low. Especially document numbers 25.29, 30, 32,
35.37, 38°42 has an open circuit voltage (voc) of 2. O
Less than v. Furthermore, the average fill factor (PF) of all 21 photovoltaic devices is 0°6 or less.
これは、Ｎｄ−ＹＡＧレーザーの発振のＱスイッチ周波
数が高いため、非晶質半導体層３の開口断面においてＰ
−１−Ｎ接合の破壊が起こり、電気的リークが発生する
ためと考えられる。This is because the Q-switch frequency of the oscillation of the Nd-YAG laser is high, so P in the aperture cross section of the amorphous semiconductor layer 3 is
It is thought that this is because the -1-N junction is destroyed and electrical leakage occurs.
（本発明の目的）
本発明は上述の知見に鑑み案出されたものであり、その
目的は、出力特性が向上し、且つ安定化する光起電力装
置を提供することにある。(Objective of the Present Invention) The present invention has been devised in view of the above-mentioned findings, and its object is to provide a photovoltaic device with improved and stabilized output characteristics.
（問題点を解決するための手段）
本発明が上述の問題点を解決するために行った具体的手
段は、非晶質半導体層と、該非晶質半導体層の上下面に
形成された電極とからなる少なくとも２個の発電区域を
絶縁基板上に配列形成し、第１の発電区域の一方の電極
は隣接して配列された第２の発電区域の他方の電極又は
その接続用延長部上にまで延びた第１の発電区域の接続
用延長部を有し、該第２の発電区域の他方の電極又はそ
の接続用延長部は非晶質半導体層を挟んで該第１の発電
区域の接続用延長部と少なくとも対向するように配置さ
れ、該非晶質半導体層は該第２の発電区域の他方の電極
又はその接続用延長部と該第１の発電区域の接続用延長
部との対向部分に接続用開口部を有し、該第１の発電区
域の接続用延長部と該第２の発電区域の他方の電極又は
その接続用延長部とが１亥接続用開口部を通じて電気的
に接続された光起電力袋において、前記接続用開口部が
直径２０〜２００μ−の小孔を複数個断続的に形成して
なることである。即ち、小孔の径をａｌＪＩｌｌ、レー
ザー照射の発振ロスイッチの周波数をｆＫＩＩｚ。(Means for Solving the Problems) The specific measures taken by the present invention to solve the above-mentioned problems include an amorphous semiconductor layer and electrodes formed on the upper and lower surfaces of the amorphous semiconductor layer. at least two power generation areas are formed in an array on an insulating substrate, one electrode of the first power generation area is placed on the other electrode of the second power generation area arranged adjacently or a connecting extension thereof. The other electrode of the second power generation area or its connection extension extends to connect the first power generation area with an amorphous semiconductor layer in between. The amorphous semiconductor layer is arranged to face at least the second electrode of the second power generation area or the connection extension thereof and the connection extension of the first power generation area. has a connection opening in the first power generation area, and the connection extension of the first power generation area and the other electrode of the second power generation area or its connection extension are electrically connected through the connection opening. In the photovoltaic bag, the connection opening is formed by intermittently forming a plurality of small holes having a diameter of 20 to 200 μm. That is, the diameter of the small hole is alJIll, and the frequency of the oscillation switch for laser irradiation is fKIIz.
基板に対するレーザー照射の走査速度をｘｍｍ／ｓｅｃ
とすると
ａ−ｆ＜ｘ
（ａはレーザーの出力、レーザーの焦点位置又は光学系
により可変する。）とした。The scanning speed of laser irradiation to the substrate is x mm/sec.
Then, a−f<x (a is variable depending on the output of the laser, the focal position of the laser, or the optical system).
以下、本発明を図面に基づいて説明する。 Hereinafter, the present invention will be explained based on the drawings.
第１図は本発明の光起電力装置の接続部分の一部拡大図
である。即ち、第２図（ａ）の光起電力装置の丸で囲ん
だ部分に相当する。FIG. 1 is a partially enlarged view of the connecting portion of the photovoltaic device of the present invention. That is, it corresponds to the circled part of the photovoltaic device in FIG. 2(a).
第１電極２ａ〜２ｃ、非晶質半導体Ｎ３、第２電極４ａ
〜４Ｃ１接続用端子６Ｃの層構成、形状は第２図（ａ）
〜（ｃ）に示す光起電力装置と同一であり、詳細な説明
は省略する。First electrodes 2a to 2c, amorphous semiconductor N3, second electrode 4a
~4C1 The layer structure and shape of the connection terminal 6C are shown in Figure 2 (a)
It is the same as the photovoltaic device shown in ~(c), and detailed explanation will be omitted.
発電区域Ｃの第２電極４Ｃは発電区域すの切り欠は部４
２ｂにまで延びる接続用延長部４１ｃを有し、発電区域
すの第１の電極２ｂは非晶質半導体層３を挟んで該発電
区域Ｃの接続用延長部４１ｃと対向するように配設され
、該非晶質半導体Ｊ！！３は発電区域すの第１電極２ｂ
と該接続用延長部４１ｃとの対向部に断続的に並んだ小
孔５１・・・から成る接続用開口部５ｃを有し、発電区
域Ｃの接続用延長部４１ｃと発電区域すの第１電極２ｂ
とが接続用開口部５Ｃを通じて電気的に接続されている
。The second electrode 4C of the power generation area C has a notch in the power generation area C.
The first electrode 2b of the power generation area C is arranged to face the connection extension part 41c of the power generation area C with the amorphous semiconductor layer 3 in between. , the amorphous semiconductor J! ! 3 is the first electrode 2b of the power generation area
It has a connection opening 5c consisting of small holes 51 arranged intermittently in the opposite part of the connection extension 41c of the power generation area C and the first connection extension 41c of the power generation area C. Electrode 2b
are electrically connected through the connection opening 5C.
前記小孔５１・・・から成る接続用開口部５Ｃの具体的
な形成方法は、Ｎｄ−ＹＡＧレーザーを利用し、レーザ
ー発振Ｑスイッチの周波数を２ＫＨｚ、基板１に対する
レーザー光の走査速度を２００ｍｍ／ＳＥＣとした。A specific method for forming the connection opening 5C consisting of the small holes 51 is as follows: using an Nd-YAG laser, setting the frequency of the laser oscillation Q switch to 2KHz, and scanning the laser beam with respect to the substrate 1 at a scanning speed of 200mm/ SEC.
これにより直径５０μの小孔５１・・・が断続的に並ん
だ接続用開口部５ｂとなる。As a result, a connection opening 5b is formed in which small holes 51 having a diameter of 50 μm are arranged intermittently.
本発明者らは１０ｃｍ角の製造用ガラス基板上に、４個
の発電区域が直列接続した光起電力装置を２１ケ作成し
、従来の光起電力装置で測定した時と同一の条件下で夫
々の出力特性を測定した。 その結果を表２で示す。The present inventors fabricated 21 photovoltaic devices in which four power generation areas were connected in series on a 10 cm square manufacturing glass substrate, and under the same conditions as when measuring with a conventional photovoltaic device. The output characteristics of each were measured. The results are shown in Table 2.
表 ２
（次頁に続く）
（前頁の表２の続き）
表２から明瞭にわかる様に、開放電圧Ｖｏｃが２゜５４
〜２．７０Ｖという高い値で安定する。また曲線因子（
ＦＦ）も資料番号１．２０を除いては０．７５以上とい
う極めて高い値を示し、２１ケの光起電力装置の平均で
も０．７７以上の極めて高い値となる。また最大出力を
計算しても半数以上の１２ケの装置が２９．０μＷ以上
の高出力光起電力装置が得られる。Table 2 (Continued on next page) (Continued from Table 2 on previous page) As can be clearly seen from Table 2, the open circuit voltage Voc is 2°54
It stabilizes at a high value of ~2.70V. Also, the fill factor (
FF) also shows an extremely high value of 0.75 or more except for document number 1.20, and even the average of 21 photovoltaic devices has an extremely high value of 0.77 or more. Furthermore, even when calculating the maximum output, more than half of the 12 devices are high output photovoltaic devices with a power of 29.0 μW or more.
上述の実施例では接続用開口部５ｂである小孔５１・・
・の直径ａが５０μであるが、その直径ａが最低２０μ
程度あれば２０μ八程度の電流を支障なく流すことがで
き、またその直径ａが２００μ以上になると、欲小孔５
１・・・をレーザー照射時に小孔中央部のエネルギーが
増大しすぎ、第１電極２ａ〜２ｃまでも除去したり、非
晶質半導体層３に多大なダメージを与え、短絡や導通不
良を起こしてしまう。In the above embodiment, the small hole 51 which is the connection opening 5b...
・The diameter a is 50μ, but the diameter a is at least 20μ
If the diameter is more than 200μ, a current of about 20μ8 can be passed through without any problem, and if the diameter a is 200μ or more, the small hole 5
1. When irradiating laser, the energy in the center of the small hole increases too much, and even the first electrodes 2a to 2c are removed, causing great damage to the amorphous semiconductor layer 3, causing short circuits and poor conduction. It ends up.
第３図は本発明の光起電力装置の他の実施例の平面図で
ある。FIG. 3 is a plan view of another embodiment of the photovoltaic device of the present invention.
この実施例の光起電力装置は基板１上の第１電極２ｄ〜
２ｆの延長部２１ｄ〜２１ｆ上にある非晶質半導体層３
の一部に、配列方向に沿って直線状に形成された接続用
開口部５を有し、第２電極４ｄ〜４ｆの接続用延長部４
１ｅ〜４１ｆが接続用開口部５を通じて隣接する発電区
域ｄ ｗｅの接続用延長部２１ｄ〜２１ｅに接続され、
発電区域ｄ−ｆの直列接続が達成される。該光起電力装
置であっても、上述したようにレーザー発振のＱスイッ
チの周波数をｆと、基板１に封子るレーザー光の走査速
度ａとの設定により該接続用開口部５を直径２０〜２０
０μの小孔５１・・・とすることができる。The photovoltaic device of this embodiment has a first electrode 2d on a substrate 1.
Amorphous semiconductor layer 3 on extension parts 21d to 21f of 2f
A connection opening 5 formed linearly along the arrangement direction is formed in a part of the connection extension 4 of the second electrodes 4d to 4f.
1e to 41f are connected to the connection extensions 21d to 21e of the adjacent power generation areas dwe through the connection openings 5,
A series connection of power generation areas d-f is achieved. Even in this photovoltaic device, as described above, the connection opening 5 is set to have a diameter of 20 mm by setting the frequency of the laser oscillation Q switch to f and the scanning speed a of the laser light sealed in the substrate 1. ~20
The small hole 51 can have a diameter of 0 μm.
上述の実施例によれば、小孔５１・・・が並設された接
続用開口部５の形成にあたって、レーザー光を定常的に
照射することにより形成されるので、製造が極めて容易
となる。According to the above-mentioned embodiment, the connection opening 5 in which the small holes 51 are arranged in parallel is formed by constant irradiation with a laser beam, which makes manufacturing extremely easy.
尚、上述の実施例では基板／透明電極／非晶質半導体Ｎ
／金属電極の光起電力装置を示したが、基板／金属電極
／非晶質半導体層／透明電極の構造の光起電力装置であ
ってもよい。In the above embodiment, the substrate/transparent electrode/amorphous semiconductor N
/Although a photovoltaic device having a metal electrode is shown, a photovoltaic device having a structure of a substrate/metal electrode/amorphous semiconductor layer/transparent electrode may be used.
以上、本発明の光起電力装置によれば、非晶質半導体層
と、該非晶質半導体層の上下面に形成された第１、第２
電極とから成る少なくとも２個の発電区域を絶縁基板上
に配列形成した光起電力装置において、第１の発電区域
及びそれと隣接して配列された第２の発電区域とが、複
数個の小孔から成る接続用開口部を通じて直列接続が行
われ、該接続用開口部を形成する際、非晶質半導体層に
ダメージを与えず、Ｐ−１−Ｎ接合を乱すことが少ない
光起電力装置であるため、開口電圧（Ｖｏｃ）が高い値
で安定し、且つ曲線因子（ＰＦ）が、全体的に４０χと
いう極めて高い比率で向上する。また、特性が安定する
ことより、歩留も向上し、低コトス化が達成できる。As described above, according to the photovoltaic device of the present invention, the amorphous semiconductor layer and the first and second
In a photovoltaic device, in which at least two power generation areas consisting of electrodes are arranged and formed on an insulating substrate, the first power generation area and the second power generation area arranged adjacent to the first power generation area are formed by a plurality of small holes. The photovoltaic device is a photovoltaic device in which series connection is made through a connection opening made of Therefore, the aperture voltage (Voc) is stabilized at a high value, and the fill factor (PF) is overall improved at an extremely high rate of 40χ. Furthermore, since the properties are stable, the yield can be improved and cost reduction can be achieved.
第１図は本発明の光起電力装置の一部拡大平面図であり
、第２図（ａ）は従来の光起電力装置の平面図、第２図
（ｂ）は同図中凸−Ａ”線断面図であり、第２図（ｃ）
は同図中Ｂ−８’線断面図であり、第２図（ｄ）は同図
中ｃ−ｃ’線断面図である。第３図は本発明の光起電力
装置の他の実施ｉ面図であり、第４図は従来の光起電力
装置の一部拡大平面図である。
ｌ・・・・基板
２ａ−２ｆ ・・第１電極
３・・・・非晶質半導体層
４ ａ ｎｆ ・・第２電極
５．５ａ〜５ｃ・接続用開口部
５１・・・・小孔FIG. 1 is a partially enlarged plan view of the photovoltaic device of the present invention, FIG. 2(a) is a plan view of a conventional photovoltaic device, and FIG. 2(b) is a convex-A "It is a line cross-sectional view, and FIG. 2(c)
is a cross-sectional view taken along the line B-8' in the figure, and FIG. 2(d) is a cross-sectional view taken along the line c-c' in the same figure. FIG. 3 is a plan view of another implementation of the photovoltaic device of the present invention, and FIG. 4 is a partially enlarged plan view of the conventional photovoltaic device. l...Substrate 2a-2f...First electrode 3...Amorphous semiconductor layer 4 anf...Second electrode 5.5a-5c/Connection opening 51...Small hole
Claims (2)
形成された電極とからなる少なくとも２個の発電区域を
絶縁基板上に配列形成し、第１の発電区域の一方の電極
は隣接して配列された第２の発電区域の他方の電極又は
その接続用延長部上にまで延びた第１の発電区域の接続
用延長部を有し、該第２の発電区域の他方の電極又はそ
の接続用延長部は非晶質半導体層を挟んで該第１の発電
区域の接続用延長部と少なくとも対向するように配置さ
れ、該非晶質半導体層は該第２の発電区域の他方の電極
又はその接続用延長部と該第１の発電区域の接続用延長
部との対向部分に複数個の小孔から成る接続用開口部を
有し、該第１の発電区域の接続用延長部と該第２の発電
区域の他方の電極又はその接続用延長部とが該接続用開
口部を通じて電気的に接続された光起電力装置。(1) At least two power generation areas each consisting of an amorphous semiconductor layer and an electrode formed on the upper and lower surfaces of the amorphous semiconductor layer are arranged and formed on an insulating substrate, and one electrode of the first power generation area is formed. has a connecting extension of the first power generating area extending over the other electrode of the second power generating area arranged adjacently or the connecting extension thereof; The electrode or its connection extension is disposed to at least face the connection extension of the first power generation area with the amorphous semiconductor layer in between, and the amorphous semiconductor layer is located opposite the connection extension of the first power generation area with the amorphous semiconductor layer in between. A connection opening consisting of a plurality of small holes is provided in an opposing portion between the electrode or its connection extension and the connection extension of the first power generation area, and the connection extension of the first power generation area and the other electrode of the second power generation area or its connecting extension are electrically connected through the connecting opening.
２００μｍであることを特徴とする特許請求の範囲第１
項記載の光起電力装置。(2) The diameter of the small hole forming the connection opening is 20~
Claim 1 characterized in that the diameter is 200 μm.
The photovoltaic device described in Section 1.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61098762A JPS62256480A (en) | 1986-04-29 | 1986-04-29 | Photovoltaic device |
| US07/032,164 US4773943A (en) | 1986-03-31 | 1987-03-30 | Photovoltaic device and a method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61098762A JPS62256480A (en) | 1986-04-29 | 1986-04-29 | Photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62256480A true JPS62256480A (en) | 1987-11-09 |
Family
ID=14228421
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61098762A Pending JPS62256480A (en) | 1986-03-31 | 1986-04-29 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62256480A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017174999A (en) * | 2016-03-24 | 2017-09-28 | ローム株式会社 | Organic thin film solar cell module and electronic equipment |
-
1986
- 1986-04-29 JP JP61098762A patent/JPS62256480A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017174999A (en) * | 2016-03-24 | 2017-09-28 | ローム株式会社 | Organic thin film solar cell module and electronic equipment |
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