JPS62232176A - Photovoltaic device - Google Patents

Abstract

PURPOSE:To obtain a photovoltaic device, which can give high output characteristics, by electrically connecting extended parts for connection in first generating regions to other electrodes in second generating regions through a connecting hole part, and outputting photovoltages in the generating regions in series. CONSTITUTION:On a substrate 1, first electrodes 2a-2c are independently formed on the approximately entire surface. An amorphous generating layer 3 is formed on the entire surface of the substrate so that the layer is continued on the first electrodes 2a-2c. Second electrodes 4a-4c approximately correspond to the first electrodes 2a-2c on the amorphous semiconductor layer 3. Generating regions (a)-(c) are formed on the substrate l. The generating regions (a)-(c) are electrically connected in series. The output of the photovoltaic device is obtained across the second electrode 4a in the generating region (a) and a connecting terminal part 6c formed on a hole part 5c for connection.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photovoltaic device having an amorphous semiconductor layer, such as a solar cell or a photo sensor.

[Conventional technology]

A conventional photovoltaic device is shown in FIGS. 3(a) and 3(b).

FIG. 3(a) is a plan view of a conventional photovoltaic device, and FIG. 3(b) is a sectional view taken along line FF' in FIG. 3(a).

A plurality of first electrodes 2g to 2i are formed on the insulating substrate 1. A continuous amorphous semiconductor layer 3 is deposited on the plurality of first electrodes 2g to 21, and further a plurality of amorphous semiconductor layers 3 are deposited on the amorphous semiconductor layer 3 corresponding to the 141% electrodes 2g to 21. A second electric field J'V4g to 41 is formed.

As a result, a plurality of power generation areas g to i are formed on the insulating substrate l.

When forming the first electrodes 2g to 21, the amorphous semiconductor J! ! Connection extensions 21g to 21i of the first electrodes extending outside the first electrode 13 are formed.

In addition, when forming the second electrodes 4g to 41, by operating the mask, they extend outside the amorphous semiconductor layer 3 and overlap with the connection extensions 21g and 21h of the first electrodes of the adjacent power generation areas g and h. The connection extensions 41h and 4 of the second electrode are connected to each other.
1i is formed. The second electrode connection extension 41g of the power generation area g is formed as it is outside the amorphous semiconductor layer 3, and a lead wire extraction connection terminal is formed on the first electrode connection extension 21i of the power generation area i. A section 61 is formed. Thus, the first electrode connection extensions 21g, 21h and the second electrode connection extensions 41h, 41i form the power generation area g.
A photovoltaic device is achieved in which electrical connections are made between -4 and -4, respectively, in a series relationship. The output of the photovoltaic device is connected to the connection extension 41g of the second electrode in the power generation area g and the connection terminal 61.
obtained between. (Refer to Japanese Patent Publication No. 58-21827) [Between the prior art 8] However, in the conventional photovoltaic device, since the connection part C of each power generation area is provided outside the power generation area, 1 of the total area of the board is
5 to 20[chi] is occupied by the connection part C which does not contribute to power generation at all, and the effective light receiving area (the amorphous semiconductor layer adhered part G) with respect to the area of the substrate is extremely reduced.

This means that, for example, when the photovoltaic device is used as a power source for a calculator, a watch, etc., not only does the substrate become extremely large in proportion to the effective light-receiving area in order to achieve a specified current value.
In order to cover the connection part C, a cover member is required, and there is a problem in that it imposes restrictions on the internal layout of calculators, watches, etc., and increases the size of such devices.

Further, since the connecting portion C is outside the amorphous semiconductor layer, unless the sheet resistance is set low, the electromotive force generated in the amorphous semiconductor layer will be lost in the distance to the connecting portion C.

Further, in the photovoltaic device described above, when forming the amorphous semiconductor layer 3, the extensions 21g to 21 of the first electrode, which will become the connection portion C, are
A mask having a window of a predetermined shape is used to prevent the amorphous semiconductor layer 3 from being deposited on the i. however,
Plasma interference occurred on the mask during the deposition of the amorphous semiconductor layer 3, leaving interference fringes on the amorphous semiconductor layer 3, particularly at the window edge portions of the mask, and deteriorating the film quality of the amorphous semiconductor Ji13. For this reason, there was a problem that the output of the above-mentioned photovoltaic device could not be sufficiently derived.

Furthermore, if a mask is used for a long period of time, the mask may be damaged or distorted by plasma etc., which may cause the amorphous semiconductor layer 3 to enter the gap between the mask and the substrate 1, or cause the mask to be placed in a highly precise position. Difficulty in alignment and misalignment of the mask may occur, making it difficult to control fine processing of the amorphous semiconductor layer 3. This lowered the yield of the above-mentioned photovoltaic device.

[Object of the present invention]

The present invention has been devised in view of the above problems,
The purpose is to provide a photovoltaic device that increases the effective light-receiving area with respect to the substrate and provides high output characteristics.

[Specific means to achieve the purpose]

The specific means taken by the present invention to achieve the above-mentioned object is to connect at least two power generation areas each consisting of an amorphous semiconductor layer and electrodes formed on the upper and lower surfaces of the amorphous semiconductor layer to an insulating substrate. In the above arrayed photovoltaic device, one electrode of the first power generating zone has a connecting extension that extends into a notch in one of the electrodes of the second power generating zone adjacently arranged. , the other electrode of the second power generation area is arranged to face at least the connecting extension with an amorphous semiconductor layer interposed therebetween, and the amorphous semiconductor layer is connected to the other electrode of the second power generation area. A connection opening is provided in a portion facing the electrode and the connection extension, and the connection extension of the first power generation area and the other electrode of the second power generation area are connected through the connection opening. They are electrically connected so that the electromotive force of each power generation area is output in series.

〔Example〕

Hereinafter, the photovoltaic device of the present invention will be explained based on the drawings. Note that the same parts as those in the prior art are given the same reference numerals.

FIG. 1(a) is a plan view of the photovoltaic device of the present invention,
FIG. 1(b) is a cross-sectional view taken along the line AA' in FIG. 1(a),
FIG. 1(c) is a sectional view taken along line B-8' in FIG. 1(a), and FIG. 1(d) is a sectional view taken along line c-c'41 in FIG. 1(a).

Reference numeral 1 denotes an insulating substrate, and the insulating substrate l is made of translucent glass, ceramic, or stainless steel whose surface is insulated.

On the substrate 1, first electrodes 2a to 2C are independently formed over almost the entire surface. Specifically, tin oxide (Snug)
A transparent conductive film made of indium tin oxide (ITO) or the like is made to a thickness of 500 to 100 mm by sputtering or plasma CVD.
Form to 0 people.

3 is an amorphous semiconductor layer, and the amorphous semiconductor layer 3 is formed over the entire surface of the substrate 1 so as to be continuous on the first electrodes 28 to 2C. The amorphous semiconductor layer 3 is provided with a P-1-N junction so that holes and/or electrons are generated by light irradiation. Although not shown, the P layer has 100 to 200 people, the 1st layer has 500 to 7000 people, and the N layer has 300 to 700 people.
Jl who is a person and amorphous buyer experience! The thickness of 53 is about 0.5 ~
It is about 0.8 μm.

58-5c are respective first electrodes 28-2 arranged and formed on the substrate l.
This is a connection opening formed in a part of the amorphous semiconductor layer 3 on c by laser irradiation along the alignment direction. The connection openings 5a to 5c are penetrated by absorbing and removing only the amorphous semiconductor layer 3 by laser irradiation, and the first electric scrapers 2a to 2c are exposed.

Specifically, a Nd-YAG laser was used, the laser oscillation loss isochi frequency was 2 KIIz, and the laser scanning speed with respect to the substrate 1 was 100 mm/sec. The connection openings 5a to 5c are formed intermittently on the same straight line.

That is, by intermittently irradiating the laser, the first electric rods 2a to 2c
When approaching the connection opening 5a of a predetermined length,
Form 5c.

The width of the connection openings 58 to 5c is determined by the output of the laser, but if it is at least 20 μm, there is no problem in deriving the output. In addition, for the connection openings 5a to 5c, the frequency and laser scanning speed for the substrate 1 can be set variously, and a single or multiple small holes with a diameter of at least 20 μm can be formed intermittently. It is a pilgrimage.

4a to 4c are second electrodes, and the second electrodes 4a to 4C are cut on the amorphous semiconductor layer 3 so as to substantially correspond to the first electrodes 2a to 2C and to expose connection openings 58 to 5c. The flame is provided with portions 42a to 42c and formed thereon. Specifically, nickel (Ni), aluminum (^l), titanium (Ti
), chromium (Cr), or other metal by using resistance heating method or sputtering method.

As a result, a power generation area a"-'c is formed on the substrate l. The electrical connection of the power generation area a"-'C is made with the second electric power Fj4a.
4c, by mask operation or etching process, extensions 41b to 41c for connecting the second electrodes 4b to 4C are simultaneously provided in the notches 42a and 42b of the adjacent power generation areas a and b, and the power generation areas are The first electrode 2a of A is connected to the connection extension 41b of the second electrode of the power generation area C through the connection opening 5a, and the first electrode 2b of the power generation area is connected to the second electrode of the power generation area C through the connection opening 5b. are connected to the connection extensions 41b, respectively, to achieve series connection of the power generation areas a-c.

Thus each generating area a"-' electrically connected in series
The output of the photovoltaic device having c
is obtained from between the connecting terminal portion 6c formed on the exposed connecting opening 5c.

Note that since the resistance R1 between each power generation area is extremely larger than the resistance R0 in the thickness direction of the amorphous semiconductor layer 3, even if the amorphous semiconductor layer 3 is formed continuously, the resistance R1 between each power generation area The leakage current in the plane direction can be ignored.

According to the present invention, the connection opening 5a is formed by laser irradiation.
The connection is made at ~5c, but according to measurements by the present inventors, if the width of the connection openings 58~5c is at least 20μ,
It has been confirmed that there is no problem at all with an output of about μ8, and as a result, the connection extension part 41 that contributes to the connection
a to 41c can be minimized to a size slightly larger than the width of the connection openings 58 to 5c.

Widths of connection extensions 41a-41c and connection openings 58-
Considering the width of 5c, it is possible to design almost the entire surface of the substrate 1 into an effective area that contributes to power generation, and at least by intermittently irradiating one laser beam in a straight line, multiple laser beams can be generated. The power generating areas a''c can be electrically connected in series.

Since no mask or the like is used when depositing the amorphous semiconductor layer 3, no interference fringes are formed on the amorphous semiconductor layer 3, improving the appearance quality and film quality, resulting in high output. A photovoltaic device is achieved that derives .

FIGS. 2(a) to 2(c) show other embodiments of the photovoltaic device of the present invention.

Figure 2(a) is a plan view of the photovoltaic device, and Figure 2(a) is a plan view of the photovoltaic device.
b) is a sectional view taken along the line DD' in FIG.
c) is a sectional view taken along the line [-E' in FIG.

First electrodes 2d to 2f are arranged and formed on the substrate l,
An amorphous semiconductor 7iI3 is continuously formed on the first electrodes 2d to 2f.

Intermittent linear connection openings 5d to 5f are formed in the amorphous semiconductor NJ3 in the direction in which the first electrodes 2d to 2f are arranged. In this embodiment, the connection openings 5d to 5f are connected to the power generation area d.
- It is formed near the center of f.

Further, on the amorphous semiconductor layer 3, notches 4 corresponding to the first electrodes 2d to 2f and exposing connection openings 5d to 5f are provided.
Second electrodes 4d to 4f are formed to provide electrodes 2d to 42f. As a result, a plurality of power generation areas d-
f is formed.

When forming the second electrodes 4d to 4f, the adjacent power generation area d
, e are formed with connecting extensions 41e and 41f extending to the notches 42d and 42e. As a result, the first electric scraper 2d of the power generation area d is connected to the connection extension part 41e of the second electrode of the power generation area e through the connection opening 5d, and the first electrode 2e of the power generation area e is connected to the power generation area through the connection opening 5e. They are connected to the connection extensions 41f of the second electric cables r, respectively, and the series connection of the power generation areas d-f is achieved.

Thus, the output of a photovoltaic device having each of the power generation zones d - f connected in series is the output of the first electrode 2f of the power generation zone d and the area where the first electrode 2f is exposed at the notch 42f of the power generation zone f. Connection terminal 6f formed on connection opening 5f
It can be obtained from between.

In the photovoltaic bag configured as above, each power generation area d-f
Since the part where these are electrically connected in series is approximately in the center of each power generation area, the holes and/or electrons collected at the periphery of the electrodes 2d to 2f and 4d to 4f can minimize loss due to sheet resistance of the electrodes. A good connection is achieved.

In addition, in the above-mentioned embodiment, the connection extension part was provided on the second electric pole and each power generation area was connected in series, but the connection extension part was provided on the first electric generation area of each power generation area and the A connection opening may be provided in the amorphous semiconductor layer on the connection extension, a rectangular second i-pole may be formed, and each power generation area may be connected in series. In addition, although the connection opening was described as a groove with a predetermined length, it is formed by intermittent single or multiple small holes with a diameter of 20μ or more depending on the frequency of the laser oscillation switch and the laser scanning speed. You may. Furthermore, it is also possible to provide a plurality of connection openings and to arrange the connection portions at both side edges of the power generation area or at an arbitrary central portion.

Further, in the above embodiment, the substrate/transparent electrode/amorphous conductor rP! J/Metal electrode photovoltaic device is shown, but the substrate/
The photovoltaic device may have a structure of metal electric bridge/amorphous conductor layer/transparent electric bridge.

〔effect〕

As described above, according to the photovoltaic device of the present invention, the photovoltaic device consists of an amorphous semiconductor layer and electrodes formed on the upper and lower surfaces of the amorphous semiconductor layer. In the photovoltaic device arrayed on the substrate, one electrode of the first power generation area has a connecting extension inserted into a notch of one electrode of the second power generation area arranged adjacently. The other electrode of the second power generation area is disposed to at least face the connection extension with an amorphous semiconductor layer in between, and the amorphous semiconductor layer is connected to the other electrode of the second power generation area. A connection opening is provided at a portion facing the electrode and the connection extension, and the connection extension of the first power generation area and the other electrode of the second power generation area are connected to each other through the connection opening. As a result, the electromotive force of each power generation area is output in series, so that almost the entire area of the substrate is equal to the area of the amorphous semiconductor layer and electrode that contribute to power generation, and the power generation area Since the area of the connecting part that connects the electrodes in series can be minimized to the area of the connecting extension part of one electrode (slightly larger dimension than the connecting opening), the effective light-receiving area relative to the board area is greatly improved and high output characteristics are achieved. Even when electronic devices such as calculators and watches are mounted, the unsightly connecting parts that must be hidden can be made extremely small, so that the electronic devices can be made smaller.

Furthermore, since the number of photovoltaic devices that can be obtained from the manufacturing substrate is increased, the price of each photovoltaic device becomes cheaper.

Furthermore, since no mask or the like is used when depositing the amorphous semiconductor layer 3, no interference fringes are formed on the amorphous semiconductor layer 3, which improves the quality in appearance and improves the modification. Therefore, a photovoltaic device that derives high output power is achieved.

Furthermore, by making the connection at the center of each power generation area, power loss at the electrode surface can be minimized.

[Brief explanation of drawings]

FIG. 1(a) is a plan view of the photovoltaic device of the present invention,
FIG. 1(b) is a sectional view taken along line A-^° in FIG. 1(a), and FIG. 1(c) is a sectional view taken along line BB' in FIG. 1(a). FIG. 1(d) is a sectional view taken along line c-c' in FIG. 1(a). FIG. 2(a) is a plan view of another embodiment of the photovoltaic device of the present invention, and FIG. 2(b) is a sectional view taken along line DD' in FIG. 2(a). Figure 2 (c) is EE' in Figure 2 (a).
FIG. FIG. 3(a) is a plan view of a conventional photovoltaic power 'ATL, and FIG. 3(b) is a cross-sectional view taken along line FF' in FIG. 3(a). l...Substrates 28-21...First electric scraper 3...Amorphous semiconductor layers 48-41...Second electrodes 5a-5f...Connection openings

Claims (1)

[Scope of Claim] A photovoltaic device in which at least two power generation areas each including an amorphous semiconductor layer and electrodes formed on the upper and lower surfaces of the amorphous semiconductor layer are arranged and formed on an insulating substrate; One electrode of the first power generation area is connected to the second electrode arranged adjacently.
a connecting extension that enters into a notch in one electrode of the second power generating area; the other electrode of the second power generating area is at least opposed to the connecting extension with an amorphous semiconductor layer therebetween; the amorphous semiconductor layer has a connection opening in a portion facing the other electrode of the second power generation area and the connection extension; connection of the first power generation area; The extension part and the other electrode of the second power generation area are electrically connected through the connection opening, so that the electromotive force of each power generation area is output in series. photovoltaic device.