JPS5996778A - Manufacture of photoelectric conversion device - Google Patents

Abstract

PURPOSE:To reduce a necessary area at the joint of a plurality of photoelectric conversion elements provided in series connection on a photo transmitting insulation substrate and thus simplify the process by using laser scribing method. CONSTITUTION:The first photo transmitting conductive film 2 is formed on the photo transmitting insulation substrate 1, and the first open groove 13 is formed by cutting and isolating this conductive film 2 to a plurality of segments by using a laser light. A non single crystal semiconductor layer 3 having a P-I-N or a P-N junction is formed thereon, and the second open groove 18 is formed by cutting and isolating this layer 3 and the conductive film 2 on the lower side thereof to a plurality of segments by a laser light. Further, the second conductive film 4 is formed on the surface thereof, and the third open groove 20 is formed by cutting and isolating this conductive film 4 or this and the layer 3 on the lower side thereof, resulting in the constitution of a plurality of photoelectric conversion elements each other connected in series.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion element (also simply referred to as dyad) in which a non-single-crystal semiconductor including an amorphous semiconductor having at least one P-N or PN junction is provided on a light-transmitting insulating substrate. )of? :Relates to a photoelectric conversion device that can generate high voltage by connecting several photoelectric conversion devices in series, and a method for manufacturing the same.

The present invention is characterized in that a laser scribing method is used to reduce the area required for connecting a plurality of elements to 1/10 to 1/10th (c) of the conventional mask alignment method.

This invention is characterized in that the required area at the connection part is reduced by using the side surface of the coating that constitutes the electrode instead of the surface of the coating that makes up the electrode for electrical connection at the connection part.○ This invention In the conventional mask alignment method, the connecting part required 5 to 1 mm, but this has been reduced to 1/1 of that.
0 to 1/100 of 350 to 30 μ, preferably 200 to 5
By setting it to 0 μ, this connection part can be set to 10 fs.
Part II] - 5 - Required hybrid method Niji≦F,
It is characterized by showing the photovoltaic power of all the panels used as a photoelectric conversion device.

In this invention, by using a laser beam scribing method, this square live 1 is created using the alignment mark as a reference.
*Storing the address in the memory of the computer (microcomputer) in advance [In addition, the mask rubbing, warping, and alignment precision required by the conventionally known mask alignment method will reduce manufacturing yield. It is characterized by eliminating all causes of price increases and yield decreases in manufacturing at once.

Conventionally, many examples of photoelectric conversion devices (hereinafter simply referred to as devices), that is, devices in which a plurality of elements are arranged on the same substrate and are integrated or hybridized, are known.

For example, JP-A-55-4994, JP-A-55-1242'
74 Furthermore, the inventor filed a patent application in 1984-900 for one horse.
97/90098/90099 (Showa 54.7.16
application) is known. In particular, this application by the present inventor uses a 5iO-8i heterojunction as a semiconductor, which is different from the case where other amorphous silicon semiconductors are used. or PN added with
Alternatively, it is characterized by being a non-single crystal semiconductor having at least one P-N junction.

However, in these conventional inventions, a vertical sectional view of which is shown in FIG. 1, all of them are based on the mask alignment method, and the alignment accuracy is insufficient and a large area is required for the connecting portion.

For example, in a method of directly and selectively producing a conductive layer or a semiconductor layer using a metal mask, the mask that provides this selectivity may shift by KO05 to 3 mm during film formation. Furthermore, since a coating component is formed on this mask, the mask is contaminated, and there are many drawbacks such as the mask being warped and the coating L7J) FIL% portion formed becomes unclear.

Furthermore, a method is known in which a conductor or semiconductor formed entirely on a substrate is selectively etched away using a mask, such as a screen printing method. However, in this method, the process is extremely time consuming, such as the process of aligning the mask for screen printing, the process of coating the resist, the process of baking and solidifying, the process of etching the 4-body or semiconductor, and the process of removing the resist. The rise was inevitable.

However, in the photoelectric conversion device of the present invention, particularly in the thin film type photoelectric conversion device, the conductive layer for electrodes, which is each thin film layer,
It has been found that the twisted semiconductor layers each have a thickness of K500A to 1μ, and by using a laser scribing method, no mask alignment is required.

As a result, instead of the conventional mask alignment process, the present invention does not use a mask at all, so it is called a scribing process, and since this scribing process is extremely simple, it is an extremely innovative process that reduces the manufacturing cost of the device. An object of the present invention is to provide a photoelectric conversion device.

Furthermore, in addition to using this laser scribing process, the present invention has a redundancy (margin) in the alignment accuracy of the scribe line.
It is important to have a degree of precision.

Therefore, the first electrode (lower side) between adjacent sweets and the second electrode (upper f11 electrode) of the other element are electrically connected on the side surface of the first electrode, so that the scribe line is It was possible to provide redundancy in the position of the open groove.

The structure of a conventional example and the present invention will be described below according to the drawing.

FIG. 1 is a vertical sectional view of a conventionally known photoelectric conversion device using a mask alignment method.

In the drawings, a transparent conductive film (abbreviated as CTF) forming a first electrode is selectively formed on a transparent substrate (for example, a glass plate) (1) by a first mask alignment step. Further, a semiconductor layer (3) is similarly selectively formed by a second mask alignment step.

Further, a second electrode ←) is provided in the third mask alignment step.

In Fig. 1, there is a connection part α between elements (1] and (31).
In the connection part, the semiconductor layer (3) covers one side α0 of the CTF, and the semiconductor layer (3) covers the surface (1 unit) of the other CTF, so that α→
requires a clearance of 1 to 5 mm, for example 3 mm. Furthermore, the first electrode (3'i') and the second electrode (38) are α→
electrically connected on the surface of the mask, but this part should not be short-circuited by the (three) second electrodes, including the wide area caused by blurring of the mask. 6) is required. Since these three masks have no self-alignment properties, the connecting portions α require 1 to 8 mm, typically 4 mm.

Furthermore, if K is less than 1 mm, the mask alignment accuracy will be extremely poor and the yield will be extremely reduced. If the gap between the connecting parts α is set to 5 m or more, the effective area of a device measuring, for example, 20 cm x 60 cm and a width of 15 Inm remains at 75% when the peripheral area is taken into account.

The present invention eliminates such process complexity and reduces the effective area to 85.
An object of the present invention is to provide an extremely innovative photoelectric conversion device that can increase the KC1 to 97%, for example, 92% KC1.

The details are shown below according to the drawings.

FIG. 2 is a vertical sectional view showing the manufacturing process of the present invention.

In the drawing, the transparent substrate (1) is, for example, a glass plate (for example, 1.2 mm thick and long in the left and right direction in the drawing) 6o c
m.

A width of 20 cm) was used. Furthermore, a light-transmitting conductive film such as TO(1500^)+Sn is applied to the entire upper surface.
O.

(200 to 400 scale) or a transparent conductive film whose main component is tin oxide added with a halogen element (1500 to 400 scale)
ooi) by vacuum evaporation method, LPcVD method or plasma C
It was formed by a VD method or a spray method.

After that, an output of 5 to 8 W was applied to the lower or upper side of this substrate using YAG laser processing (manufactured by Nippon Laser), and an output of 5 to 8 W was applied to the lower or upper side of the substrate. o~'70 pf Typically, the open groove formed by scribing is approximately 50μ in width and 20μ in length.
cm, and the width of each element (31) < 1◇ is 10~
20mm, e.g. 15mm (one segment is 15m)
m x 20 cm). In this way, the cTF (2) constituting the first electrode was cut and separated to form an open groove.
! A non-single crystal semiconductor layer having a PN or P-N junction is formed by the VD method to a thickness of 0.2 to 0.7μ, typically 0.4 to 0.5μ.
It was formed to a thickness of μ. A typical example is a P-type semiconductor (Si
xO,, x = 0.250~150X)-1 type amorphous or semi-amorphous silicon semiconductor (0,4~
A non-single crystal semiconductor having one P-N junction, or a P-type semiconductor (SixC!+-Lee N type,
P-type Si semiconductor - 1-type S IX G e, -g semiconductor -
Two P-N junctions and one PN made of N-type S1 semiconductor
Tantem-type P-type NP-type NIIIIII with joint
It is an IPIN junction semiconductor.

Such a non-single crystal semiconductor layer (3) was formed to have a uniform thickness over the entire surface. Furthermore, as shown in Figure 2 (B) K, the first
Second open grooves (181) were formed in four directions of the open grooves by a second laser scribing process.
1) can be done either from the lower side of the substrate or from above this substrate.
9) was exposed. The a+ face (9) of this second open group may be on the fL side of the first electrode (1),
As an extreme example, it may enter inside the first electrode (31) as shown in the drawings. Furthermore, as shown in the conventional example, it is not necessarily necessary to expose the surface (1·υ) of the first electrode, and the laser beam is
So some J31? -11) The aspect of removing all this OT'F (Fig. 2 (B)) -c Ah □4 There is no problem in practical use. That is, it is extremely important for the industrial application of the present invention to be able to provide a margin for the intensity of the laser light output <1170.

In FIG. 2, a surface electrode was further formed on this upper surface as shown in FIG. 2(c), and an opening groove 00 for cutting and separation in the third laser scribing method was provided.

This second electrode is made by forming a transparent conductive film with a thickness of 300 to 3000 mm on its upper surface, and then forming a layer of silver on its upper surface to a thickness of 300 to 3000 mm. A double-layer film of aluminum, newium, or aluminum and nickel was formed on the top surface.
050λ, add 1oooX silver, and add nickel. Furthermore, nickel is used to improve adhesion with the external lead electrode (g). These methods degrade semiconductor layers using electron beam evaporation or plasma CVD.
It was formed at a temperature of 0'0 or less.

This To is also useful for improving the performance by the reaction between the semiconductor and the I6.

The above example shows a case where such a back electrode is irradiated with laser light from above. This laser light slightly gouged out the semiconductor layer to prevent leakage due to residual metal in the open groove between pAZb2y and element (31) and f (11). It is preferable that this gouging does not reach the CTFK for the first electrode, and the remainder S a,= of the laser output of this semiconductor layer valve is industrially important.

Thus, as shown in FIG. 2(c), a plurality of elements (
31), (We were able to create a photoelectric conversion device in which 1υ were connected in series at the connecting part α.

FIG. 2(D) shows the attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film (2) of 50 to 2
It was formed to a thickness of 00OA. Furthermore, an external lead terminal (A) was provided at the peripheral portion (5)K. Organic resins such as polymide, polyamide, kapton or epoxy (2)
filled with.

Thus, for each irradiation light (1), the substrate as in this example (6
0cm x 20cm), each element is 14.35mm
.

Connection part 150μ External extraction electrode part 10mm, peripheral part 4m
Effective area (19Ym m x 14゜35mm x
4ot=1xo27mL, or 91.8%). As a result, if the segment has a conversion efficiency of 10.6, the panel will have a conversion efficiency of 9.7% (AMI (1oo
mw/Cm) K, it was possible to have an output power of 11.6W.

This is 55% (
(In the case of 40 stages) The effect is extremely significant compared to K. Moreover, since no mask is used, there is no industrial problem in the manufacturing process of large-area panels, making it extremely suitable for large-area, low-cost mass production for generating large amounts of power.

Furthermore, in FIG. 2(D), when the laser output is increased, the peripheral part of the groove can be cut better, but there is no practical problem even if the lower part is slightly damaged.

In particular, since the first electrode and the second electrode can be electrically connected at the side of the first electrode, the area of the contact portion can be sufficiently reduced.

In addition, as shown in FIG. 2(B) K, if the laser scribe of the semiconductor layer (3) is one groove line, the electrode will be (3
2), but this 1i conceptually does not support 1d(3).
It is also possible to use the current in 3) more effectively.

FIGS. 3, 4, and 5 are a vertical sectional view and a plan view showing the positional relationship of three laser scribes. Numbers etc. are the same as in FIG. 2.

Fig. 3 shows that the second laser scribing process is performed from above the substrate at the connecting part αJ, and the open groove 0QK is the same as the first electrode (2) and the second electrode as well. The first electrode is covered or combed to prevent leakage current between the electrodes.

Figure 4 shows that the first open groove part 0 and the second open groove part α have the minimum loss area ((), and it is possible to have a connecting part with an LOC of 1μ or 60μ. did it.

FIG. 5 is located midway between FIGS. 3 and 4, and shows a vertical sectional view of a typical connecting portion. In this figure, the width of the connecting portion was 150μ to 100μ in the first and second opening grooves 50 to 30μ and the third opening groove 75 to 50μ.

By making the spot layer of the YAG laser as described above smaller than the connecting portion between its outputs 3 and 3, it was possible to improve the effective area as a photoelectric conversion device.

FIG. 6 is an enlarged view of the external lead electrode section.

FIG. 6(A) corresponds to FIG. 2, but the external lead-out electrode (5) is connected to the upper electrode (4) through soldering 02). Furthermore, in FIG. 6(B), a joint 04) connected to the first electrode on the lower side is provided by a second electrode material, and is provided by an external lead electrode α3) via a solder (42). The original second electrode (4) is cut by the third groove (c), and the cut surface is etched with a silicon nitride film.

One corner (resin mold (a) has lead electrodes (5), (43)
) is covered for fixation, and this panel, for example 4
It is possible to package 0 cm x 20 cm '4 or 60 cm x 20 cm with 6 or 4 straight tKl+K aluminum sash frames, and provide a 120 cm x 40 crn NED O standard panel.

In addition, the NEDO standard panel is made of laminated glass made by laminating another glass plate on the top of the slow x, and a photoelectric conversion device is placed between them to increase the strength against cages etc. That is valid.

In FIGS. 2 to 6, light was incident through the lower glass plate. However, the present invention does not limit the light incident side to the lower side.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view of a conventional photoelectric conversion device. FIG. 2 is a vertical cross-sectional view showing the manufacturing process of the photoelectric conversion device of the present invention. Tomoki Izuru b'1'1 person order 4 (A)
CB 6 hammers

Claims (1)

[Claims] 1. A step of forming a first transparent conductive film constituting a first electrode on a transparent insulating substrate, and cutting and separating the first conductive film into a plurality of segments using a K laser beam. Step 1 of forming an open groove, and forming a KP process on the conductive film and the groove.
a step of cutting and separating a non-single crystal conductive film having at least one t or PN junction into a plurality of segments using a laser beam to form a second open groove; ``The step of forming a second conductive film on the surface of the non-single crystal semiconductor and the first conductive film, and the step of forming the second conductive film, or the conductive film and the non-single crystal semiconductor below it with a laser. A plurality of photoelectric conversion elements are formed by cutting and separating with light to form a third open groove, and the plurality of photoelectric conversion elements are electrically connected in series to each other and formed on the same insulating substrate. A method for manufacturing a photoelectric conversion device, characterized in that: