JPS60100482A - Manufacture of photoelectric converting semicoductor device - Google Patents

Abstract

PURPOSE:To couple an element in series at the side end without shortcircuiting by forming a contact for electrically coupling at the side of the first electrode via a conductor lead extended from the second electrode by utilizing the second opened groove formed inside. CONSTITUTION:The second opened groove 18 is formed, and the sides 8, 9 of the first electrode are exposed. Further, part of the first electrode 37 of the first element is allowed to remain on the left side 9 of the second opened groove 18. If such a remaining region does not exist, the vicinity of the groove is deteriorated in the insulation due to laser annealed polycrystalline semiconductor due to high heat (-2,000 deg.C) of the laser light. Since this polycrystal is remarkably generated on the surface of a glass substrate, this crystallization is prevented by the projection 9, thereby preventing sides 9, 16 from electrically shortcircuiting. In other words, the same second electrode of the element as the first electrode 39 can be prevented from shortcircuiting.

Description

Detailed Description of the Invention The present invention provides a plurality of photoelectric conversion elements (also simply referred to as elements) in which a non-single crystal semiconductor including an amorphous semiconductor that generates photovoltaic force upon irradiation with light is provided on a substrate having an insulating surface. The present invention relates to a method (d) of manufacturing a connecting portion in a photoelectric conversion device that is electrically connected in series and is capable of generating a high voltage.

In the present invention, when a photoelectric conversion device is manufactured by laser scribing (hereinafter referred to as LS), a first conductive film on a substrate and a second conductive film on a semiconductor are connected to each other in a connecting portion connecting each element in series. In order to prevent the conductive films from shorting each other due to their size and not being electrically connected in series, open grooves for connection (hereinafter referred to as second open grooves) are placed on both sides of the semiconductor. “inside” rather than the edge
It is characterized by the fact that it is set in

This invention provides a method for connecting the peripheral part of a photoelectric conversion device panel (hereinafter simply referred to as a panel), particularly when this panel is rectangular or rectangular, also in the other two sides where no external extraction electrode is formed. The lower electrode of one element (
The first electrode made of the first conductive film) and the upper electrode of the adjacent element (second electrode made of the second conductive film) are connected by a conductor extending from the second electrode. The feature is that the first electrode and the second contact are connected.

Conventionally, the substrate generally has a concave or convex curvature of 1 μm to 0.1 mm at the side edges of the panel. Since the laser beam is out of focus at such side edges, the first
It is not possible to completely electrically separate the conductive film into the shape of the first electrode required for a predetermined element.

Furthermore, if this first electrode is CTl' whose main component is tin oxide or insium oxide, when it is formed on the side surface of the substrate by electron beam evaporation, the CTF rotates and the conductivity on that side surface is determined by LS. cannot be removed.

That is, it has been found that short circuits may occur at the connecting portions that connect the respective elements in series. That is,
If the connecting part forms an open groove (second open groove) that extends to the edge of the semiconductor, the second electrode at this connecting part is connected to the second electrode in the outer groove of the adjacent element. It is also electrically connected to the conductive film of No. 1. Furthermore, this conductive film is short-circuited with the first conductive layer 11Q under the second electrode due to leakage, resulting in a short circuit between the upper and lower electrodes of one element at the periphery. It becomes impossible to generate electricity. Therefore, it is extremely important to prevent the photovoltaic power from decreasing due to short circuits in the peripheral area.

Therefore, the present invention solves this problem and solves the second problem that is important for connection.
L is smaller on the inside than the semiconductor IJ in which an open groove is formed.
S, and the adjacent elements in one panel are connected in series without short-circuiting at the side ends.

Furthermore, in the present invention, in order to remove the edge of the substrate which is difficult to cut due to the defocus of the laser beam when forming the first conductive film to electrically open the groove (hereinafter referred to as the first groove), this side By forming an open groove (hereinafter referred to as the fourth open groove) inward from the end (generally 0.3 to 5 mm) using a laser beam, the first electrode for each element is formed into four open grooves. (Two first open grooves and two fourth open grooves) surround the circumference.

In this way, it was possible to eliminate the electric show I- between the electrodes due to variations in laser processing due to substrate warping at the edge of the substrate as described above.

The present invention achieves such a stacked structure without using a mask, but during this integration, the side edges of the substrate, which tend to require extra steps, can be achieved in the same LSI as the integration process. It is something.

Furthermore, in the present invention, in addition to using this laser staglining process, it is important to have a degree of redundancy (margin) in the alignment accuracy of the scribe lines. Therefore, the first electrode wA (lower side) between adjacent elements and the second electrode (upper electrode) of another element are not connected to each other on the "outside" of this semiconductor, but on the "outside" of the semiconductor. L on internal j side
Utilizing the second groove formed by S, a contact is configured to be electrically connected to the side surface of the first electrode or the side surface and the upper surface of the first electrode by a conductor lead extending from the second electrode. This made it possible to provide redundancy in the position of the open groove of the scribe line.

Hereinafter, the present invention will be explained according to the embodiments shown in the drawings.

Figure 1 shows a panel (50) of a photoelectric conversion device using the present invention.
is shown from the top. That is, in the drawing, the photoelectric converter -j'-(31), (II) is the connecting part (12)
Connect in series through ! A photoelectric conversion device (50) which has been converted into a photovoltaic device (50) is installed in the top 6i; ) is provided.

Of the three grooves that make up this connecting part (12>), the second groove is shown as a representative in the drawing. Therefore, in the drawing, this groove does not reach the separation groove (36), but instead extends to the inside. It is arranged in a straight line.

In the panel shown in Figure 1, its size is 20cm x 6
0cm, 40cmX120cm, 40cmX6Qcm
Any size can be obtained by design.

FIG. 2 shows a vertical cross-sectional view taken along the line (AA') in FIG. 1. Furthermore, the vertical cross-sectional view of (B-B') is shown in Figure 3 (B).
3(C) is shown enlarged in FIG. 3(A). The numbers correspond to each other.

FIG. 2 shows a longitudinal sectional view of FIG. 1 along line AA'. That is, it is a longitudinal cross-sectional view showing the manufacturing process of the present invention.

In FIGS. 2(A) and 3, a substrate having an insulating surface, such as a transparent substrate (1), that is, a glass plate (for example, thickness 1.2 mm, length in the left and right direction in the drawings: 60 cm, middle 20 cm); A photosensitive organic resin (a substrate having a thickness of 100 μm or a silicon nitride film (thickness 0.1 to 1 μm) formed on a transparent organic resin film) was used. Furthermore, a transparent conductive film such as ITO (approximately 1,500 layers) is applied over the entire upper surface.
+SnO, (200-400 people) or a translucent conductive film whose main component is tin oxide added with a norogen element (3
500 to 10,000 people) using the vacuum MH method, 1. It was formed by a PCVD method, a plasma CVI method, or a spray method.

After this, from the top of this board, use a YAG laser processing machine (
(manufactured by Nippon Laser), add an average cutting edge of 0.5 to 3W, spot diameter 30 to 7oμφ, for example 5oμψ, frequency 7KI
Iz, 0.1 μsec during the pulse is irradiated by controlling the number of microcontacts, and the scanning groove (13) for the scribe line (<13') is formed between each element region and The external extraction electrode Iti castle (5) was divided.

Then, a first electrode (37), <39) was produced.

The first open groove (] 3 ) formed by this LS, <
13') was +13 about 50μ long and 20cm long, and the depth was δ11 by completely cutting each of the first electrodes. This length was determined by passing through from the top edge of the drawing in FIG.

In this way, the external extraction electrode region (5), the first element region (
3) and the second element region (Moon) were constructed. The middle of these elements was set to 0 to 20 mm.

In addition, as shown in FIG. 3, a fourth open groove (56) for the separation groove (36) on the side of the substrate was also fabricated by the same LS process. As a result, the element area (
31) The laser beam is out of focus due to the uneven unnecessary conductive film (15) in the peripheral area, that is, the warpage of the substrate in the concave and convex portions at the side edges,
It was electrically isolated from the region (17) where the open groove (13 03') could not be formed. The active region (1
4), the element (31) is formed by the open groove (13), <11
) were electrically isolated.

After this, this active region (14), the first open groove and the fourth
Plasma CVD method or LPCVD method is applied to the upper surface to cover the open groove.
method, optical CVD method, optical plasma 7CVD method, [,T CVD
A non-single crystal semiconductor, especially PN or P, which generates photovoltaic force by light irradiation using
Non-single crystal semiconductor FJ (3) with IN junction from 0.2 to
It was formed to a thickness of 1.0 μm, typically 0.4 to 0.6 μm. A typical example is a P-type semiconductor (SixC1-Xx
= 0.850 to 150 people x 23) - Type I amorphous or semi-amorphous silicon semiconductor (0.4 to
0.6 μ) < 24) -N type microcrystalline (100-200) or a non-conductor with one PIN junction consisting of a semiconductor (25) of 5ixC+-x (0 < x < 1 e.g. x = 0.9). A single crystal semiconductor (3) was used. As this semiconductor, a P type semiconductor (SixC1-)<) -1 type Si semiconductor -N type Si semiconductor -P type Si semiconductor -■ type 5jXGc
A tandem type PIN pin having two PIN junctions and one PN junction made of l-x semiconductor-N type semiconductor.
...It may be used as an IIIN junction semiconductor (3). The non-fl'L crystalline semiconductor (3) is used as the active region (14) of the CTF.
) and open grooves (13), <13') were formed by uniform removal over the entire surface of J2.

Further, as shown in FIG. 2(B), the first open groove (1
3) On the left side, make a second open groove (]8) with a diameter of 100μ
~200μ distance 1i11t(7) to the second L
Formed by SI process.

Thus, the second open groove (111) is located on the side surface (8) of the first electrode.
), <9> was exposed. At this time, when the scanning speed of LS is 60 cm 7 minutes or less, the side eyes are exposed. However, this speed is 10 (1cm 7
250 cm for 7 minutes, it was possible to simultaneously expose the upper surface of the side surface with a volume of 0.5 μ to 5 μ. That is, the semiconductor is melted and removed at 1420°C by LS, but the sublimation temperature is several times stronger than this, that is, the sublimation temperature is 18°C.
CTF such as SnO, which is 50"C, tends to remain. In addition, since the laser beam is stronger in the center due to Gaussian distribution, both the semiconductor and CTF are removed in the center of the open groove, and the peripheral part of the open groove is removed. This is because only the semiconductor is removed.Furthermore, after this, the remaining material was eluted with 1/10 of the amount.A conductor made of the same material as the second electrode was extended, and the contact was constructed by laminating the second conductor. I let it happen.

As shown in FIG. 3(A), this second opening m (1B) terminates at the end (2) inside the end (27) of the semiconductor (3).
6). During LS, the substrate or laser light source was scanned, and after reaching a constant speed, irradiation was started at (26), or irradiation was stopped at (26) and synchronized. By setting the second open groove end (26) inside the end (27) of the semiconductor, the first electrode (37) of the element (31) and the second electrode ( 38), it was possible to prevent short circuits at the side edges (17) of the board.

Furthermore, even if the second electrode on this semiconductor is larger than this semiconductor, pattern misalignment will occur again, and the edge of the semiconductor (
27) Even if it is shifted further outward, it can also be prevented from coming into contact with the first electrode of the element via the connecting portion.

Further, as is clear from FIG. 2(B), a part of the first electrode (37) of the first element remains on the right side (9) of the second groove.

If there is no such residual area, the height of the laser beam jHJ>(~
2000° C.), the vicinity of this open region is laser annealed and becomes a polycrystalline semiconductor, resulting in deterioration of insulation properties. Since this polycrystal is extremely likely to occur on the surface of the glass substrate, this convex portion (9) prevents this crystallization.
This prevents the side surfaces (9) and (16) from being electrically shorted. That is, it was possible to prevent the first electrode (39) and the second electrode (38) of the same element from being exposed in FIG. 2(C). This (9)
The CTF remaining in the portion was 20 to 2 (jOμ).

In FIG. 2, a second conductive film (4) on the back side is further formed on this top surface as shown in FIG. 2<C>, and the same material as the conductive film is extended to form the first electrode. The side surface or the side surface and the upper surface (18) constituted a contact.

By doing so, it was possible to achieve a low contact resistance of 1.5 Ω/cm or less in the contact between the side surface or the side surface and the upper surface. That is, the connecting part in the present invention is characterized in that the "same conductor" extends from the second electrode to the contact area and is brought into close contact with the side surface of the first electrode or the exposed surface of the side surface and the upper surface. It is.

This second conductive film (4) has a translucent conductive film of 100 to 14
It was formed of ITO (indium tin oxide) to a thickness of 0.00 mm, and titanium (10 to 50 mm), silver (100 to 500 mm), and chromium were further formed to a thickness of 300 to 3000 mm on its upper surface. Or 300 ~ chromium on ITO
It was formed to a thickness of 3,000 people. For example, ITO is 1050
2N structure with 1500 people and chromium.

In this way, the ITO formed a contact (oxide-oxide contact) to the CTF.

It is also possible to form nickel or other metal on the chromium, or to use nichrome instead of chromium.

The size 57) of this second conductive film is at the side of the second open groove end (26) as shown in FIG. 3(A).
It is preferable that it be larger than b), and that it be located inside the side part (27) of the semiconductor (3).

The end portion (57) of the second conductive film is manufactured using a substrate holder (frame) when the second conductive film is manufactured by electron beam evaporation.
The surrounding area 1113 was masked and 10 studies were carried out.

Furthermore, by the third LS method, a third opening groove (20) for separation was provided.

This open groove completely extends through the conductive film (4). Irradiation with this laser light made it possible to select and remove sublimable conductors ITO and chromium. At this time, since the laser beam is focused on this second conductive film, an open/1 negative is formed in the half 2η body below it on the side of the panel (15 bars in Figure 3). It was difficult.

Further, the upper part of the semiconductor under the third trench was oxidized (6) to prevent crosstalk (leakage current) between the respective second electrodes.

Thus, as shown in FIG. 2(C), <in number of elements (
31), < 11) were connected in series at the connecting part (12).

FIG. 2(D) shows the attempt to further complete the present invention as a photoelectric conversion device, that is, a silicon nitride film (21) with a thickness of 500 to
It was formed to a thickness of 5,000 mm to prevent leakage current between each element. Furthermore, an external drawer band (49) was provided at the peripheral part (5).

These were filled with an organic resin (22) such as polyimide, polyamide, carboxylic acid, or epoxy.

FIG. 3 is an enlarged view of (BB') and (C) in FIG. 1.

In FIG. 3(A), two elements (31), < 11
) and a connecting portion (12). Side edge (17
), as shown in Figure 3 (B) < , CTF (
59) will remain. Therefore, even if these conductors remain, in order to prevent the element (31,) <11) from becoming inoperable, even if this conductor (59) remains, the panel is The structure that can be fixed to the outer frame (46) is shown on the right.

That is, the first conductive film (
2) is separated by forming a fourth open groove (56). Furthermore, a semiconductor (3) is formed to cover this fourth trench.

Thereafter, a second trench (18) is formed in this semiconductor on the inside (26) side of the semiconductor.

Even if the 1st Q) conductive films of adjacent elements are connected to each other by this separation groove (36), the inner contact (2G) of the second open groove (18) allows the separation of each other. It was possible to prevent short circuits between the electrodes. Further, due to the carbon fiber frame (46), even if the conductor (17) is pressurized and short-circuited, the elements (31), 01) will not suffer any characteristic deterioration. That is, the side part (15) has an open groove (56) and a side 17f11f (5
The separation groove (36) provided by 7) enables stable fixation to the outer frame (46), etc. Furthermore, even if the frame and photoelectric conversion device are fixed with resin (41), it is possible to obtain a sufficiently reliable device.

Thus, for the irradiation light (10), each element on the substrate (60 cm x 20 cm) as in this example is
．． The effective area (1
92mm x 14.35mm x 40 stages 1102
cn! That is, 91.8%) was able to be obtained. As a result, if segment 1- has a conversion efficiency of 9.3%, the panel has a conversion efficiency of 7.6% (AMI (100mW/cal)
), it was possible to have an output power of 9.3 o'clock.

Furthermore, since no metal mask is used, there is no industrial hindrance in the manufacturing process of large-area panels, making it extremely suitable for large-area, low-cost mass production for generating large amounts of power.

[Flannel made according to the present invention] (for example, 40cm x 20cm or 60cm x 20cm)
Packaged by combining 6 pieces or 4 pieces in series in an aluminum sash frame, 120cm x 40cm.
It is possible to provide a high power panel of NEDO standard of m.

In addition, this NEDO standard panel can be made into a composite by gluing another glass plate or other mechanical substrate onto the reflective surface side (the upper side in Figure 2) of the photoelectric conversion device of the present invention using a laminating adhesive such as Schiffle Nox. It is also necessary to increase mechanical strength against wind pressure, rain, etc.

In the present invention, the second open lil'j is αj1 of the semiconductor
°, the case where the inner side (inside) of the first part is one groove is shown.

However, LS has the disadvantage that the contact resistance increases; however, by discontinuously irradiating pulsed laser light during scanning, a plurality of open grooves in the form of bows or broken lines are created.
It may be configured as a plurality of contacts 1-U.

In FIG. 3, the second conductive film is formed as shown in FIG.
5th open groove Niyo/) (57) (D position ji'J 6w
Board 11! +l 6. It may be provided separately from the i and i parts.

In FIGS. 1 to 3, light was incident from the glass plate on the 11th side. However, the present invention does not limit the large MJ side of the light to the lower side.

In addition, what about the present invention? No need to install 112 open grooves,
Furthermore, it does not include a structure in which a contact is formed on the upper surface of the first electrode of an adjacent element using a semiconductor-metal mixed conductor in which a second electrode material is abnormally diffused into the one semiconductor. This is because, in such a structure, the semiconductor and the diffused metal, such as aluminum, react with each other and tend to become poor conductors. Furthermore, an oxidation reaction occurs at the interface between the metal and the first electrode of the oxide conductor, forming an aluminum oxide insulator, which is impossible.

[Brief explanation of the drawing]

FIG. 1 shows a panel of a photoelectric conversion device of the present invention. FIG. 2 is a longitudinal sectional view showing the manufacturing process of the photoelectric conversion device of the present invention. FIG. 3 is an enlarged longitudinal sectional view of the photoelectric conversion device of FIG. 1 according to the present invention. Patent applicant Representative of Semiconductor Energy Research Institute Co., Ltd. Shun Yamazaki 3 + 12 = (r3) Ashi 3 (2)

Claims (1)

[Claims] 1. A step of forming a plurality of first electrodes on a substrate having an insulating surface, and generating a photovoltaic force by irradiating light covering the electrodes and the first electrode between the electrodes. a step of forming a non-single crystal semiconductor; a step of exposing the first electrode by irradiating the non-single crystal semiconductor with a laser beam to form a second groove inward from a side edge of the semiconductor; A second electrode is formed on the second groove and the non-single crystal semiconductor in correspondence with the first electrode, and a conductor of the second electrode is extended to the exposed surface of the first electrode. 1. A method for manufacturing a photoelectric conversion semiconductor device, characterized in that adjacent elements are electrically connected in series. 2. In claim 1, the side surface or the side surface and the upper flat surface of the first electrode are exposed by forming the second groove, and the second conductive film of the element adjacent to the core portion is closely attached. A method for manufacturing a photoelectric conversion semiconductor device, characterized in that a contact is formed. 3. The photoelectric conversion according to claim 1, characterized in that the second groove synchronizes the start and end of laser beam irradiation with constant scanning of the substrate or laser beam and laser beam irradiation. A method for manufacturing a semiconductor device.