JPS6184074A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6184074A
JPS6184074A JP59206084A JP20608484A JPS6184074A JP S6184074 A JPS6184074 A JP S6184074A JP 59206084 A JP59206084 A JP 59206084A JP 20608484 A JP20608484 A JP 20608484A JP S6184074 A JPS6184074 A JP S6184074A
Authority
JP
Japan
Prior art keywords
substrate
layer
film
grains
connector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59206084A
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP59206084A priority Critical patent/JPS6184074A/en
Publication of JPS6184074A publication Critical patent/JPS6184074A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/548Amorphous silicon PV cells

Abstract

PURPOSE:To provide a photoelectric transducer which does not result in optical deterioration, by forming in an I type layer a number of column grains vertical to an insulating substrate, in the case where a semiconductor device is manufactured which has laminations of a first electrode, a non-single-crystalline semiconductor film with a PIN junction containing hydrogen or halogen elements, and a second electrode on the substrate. CONSTITUTION:A conductive film 2 such as SnO2 or ITO having unevenness with a height difference of - 0.1mum formed on the back and front surfaces is formed on a glass substrate1. On one end of the film 2, a connector is mounted, and from over the film 2 spaced away from the connector to the other end, PIN non-single- crystalline semiconductor layer 3 containing hydrogen or halogen elements is coated with a plasma CVD method. At this time, a number of column grains 40 vertical to the substrate are formed in the I type layer constituting the PIN junction. From over the layer 3 to the exposed portion of the substrate 1, a conductive layer 5 having the similar unevenness is coated, at the end of which a connector 30 is mounted. Thereafter, the back face of the substrate 1 is scanned by irradiating light 25. Thus current flowing transversely can be prevented by the column grains and extension of a depletion layer can be increased.
JP59206084A 1984-10-01 1984-10-01 Semiconductor device Pending JPS6184074A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59206084A JPS6184074A (en) 1984-10-01 1984-10-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59206084A JPS6184074A (en) 1984-10-01 1984-10-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6184074A true JPS6184074A (en) 1986-04-28

Family

ID=16517552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59206084A Pending JPS6184074A (en) 1984-10-01 1984-10-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6184074A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5534716A (en) * 1993-08-27 1996-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction
US5962871A (en) * 1993-05-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP2001358350A (en) * 2000-06-12 2001-12-26 Canon Inc Photovoltaic element
US6475840B1 (en) * 1993-06-12 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2013149951A (en) * 2011-12-21 2013-08-01 Panasonic Corp Thin-film solar cell and manufacturing method thereof

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61231771A (en) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd Manufacture of semiconductor device
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US6337231B1 (en) 1993-05-26 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5824573A (en) * 1993-05-26 1998-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5962871A (en) * 1993-05-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6090646A (en) * 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6121076A (en) * 1993-05-26 2000-09-19 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US6475840B1 (en) * 1993-06-12 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8133770B2 (en) 1993-08-27 2012-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US6194254B1 (en) 1993-08-27 2001-02-27 Semiconductor Energy Laboratories Co., Ltd. Semiconductor device and method for manufacturing the same
US5616506A (en) * 1993-08-27 1997-04-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a crystallized silicon thin film in which the crystallization direction is oriented either vertically or horizontally to the current flow direction
US5534716A (en) * 1993-08-27 1996-07-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistors with different orientations of crystal channel growth with respect to current carrier direction
US6482686B1 (en) 1993-08-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7045819B2 (en) 1993-08-27 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7410849B2 (en) 1993-08-27 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US7875508B2 (en) 1993-08-27 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2001358350A (en) * 2000-06-12 2001-12-26 Canon Inc Photovoltaic element
JP2013149951A (en) * 2011-12-21 2013-08-01 Panasonic Corp Thin-film solar cell and manufacturing method thereof

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