JPS6393169A - Manufacture of photovoltaic element - Google Patents
Manufacture of photovoltaic elementInfo
- Publication number
- JPS6393169A JPS6393169A JP61239510A JP23951086A JPS6393169A JP S6393169 A JPS6393169 A JP S6393169A JP 61239510 A JP61239510 A JP 61239510A JP 23951086 A JP23951086 A JP 23951086A JP S6393169 A JPS6393169 A JP S6393169A
- Authority
- JP
- Japan
- Prior art keywords
- film
- cdte
- sintered
- cds
- photovoltaic element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910004613 CdTe Inorganic materials 0.000 abstract description 38
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 16
- 239000013078 crystal Substances 0.000 abstract description 11
- 229910052799 carbon Inorganic materials 0.000 abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 8
- 238000001704 evaporation Methods 0.000 abstract description 6
- 230000008020 evaporation Effects 0.000 abstract description 5
- 238000005245 sintering Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003292 diminished effect Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000004952 furnace firing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 101100062772 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) dcl-2 gene Proteins 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は太陽電池などに使用可能な印刷形の薄膜ＣｄＳ
／ＣｄＴｅ構造の光起電力素子の製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to printed thin film CdS that can be used for solar cells, etc.
The present invention relates to a method of manufacturing a photovoltaic element having a /CdTe structure.
従来の技術
従来、ＣｄＳ／ＣｄＴｅ構造の光起電力素子の製造技術
の一つとしてスクリーン印刷とベルトコンベア炉による
焼成を利用した製造方法がある。この方法の特徴は簡単
に実施でき、かつ量産性に富み、大面積化が可能な安価
な光起電力素子が得られることにある。BACKGROUND OF THE INVENTION Conventionally, as one of the manufacturing techniques for photovoltaic elements having a CdS/CdTe structure, there is a manufacturing method using screen printing and firing in a belt conveyor furnace. The feature of this method is that it is easy to implement, has high mass productivity, and can produce inexpensive photovoltaic elements that can be made into a large area.
以下図面を参照しながら、上述した従来のＣｄＳ／Ｃｄ
Ｔｅ構造の光起電力素子の一例について説明する。The conventional CdS/Cd described above will be described below with reference to the drawings.
An example of a photovoltaic element having a Te structure will be described.
第２図Ａ−Ｄは、スクリーン印刷とベルト炉焼成法によ
って作製された太陽電池の平面図と断面図である。FIGS. 2A-2D are a plan view and a cross-sectional view of a solar cell fabricated by screen printing and belt furnace firing.
まず、粒径数ミクロンの高純度ＣｄＳに融剤として適量
のＣｄＣｌ２を加えプロピレングリコール（ＰＧ）を溶
媒としてバーストを作製する。次に、このペーストをガ
ラス基板１上にスクリーン印刷し、所定の容器に収納後
連続ベルト炉で焼成することによりＣｄＳ焼結膜２を製
造する。次に、このＣｄＳ焼結膜２上に微粉末にしたＣ
ｄ、Ｔｅ粉末に適量のＣｄＣｌ２を加えＰＧを溶媒とし
て作製したペーストを同様にスクリーン印刷法でｉ望（
７）パターンに塗布し、ベルトコンベア炉で焼成するこ
とによりＣｄＴｅ焼結膜３を形成する。この上にＣｄＴ
ｅ焼結膜３をＰ型化すると同時にＣｄＴｅ焼結膜３とオ
ーミック接触するカーボンペーストを所望のパターンで
印刷し、熱処理を行うことによりカーボン膜４を得、Ｃ
ｄＳ／ＣｄＴｅヘテロ接合を形成する。First, a burst is prepared by adding an appropriate amount of CdCl2 as a flux to high-purity CdS with a particle size of several microns and using propylene glycol (PG) as a solvent. Next, this paste is screen printed on the glass substrate 1, stored in a predetermined container, and then fired in a continuous belt furnace to produce the CdS sintered film 2. Next, finely powdered C is placed on this CdS sintered film 2.
d. A paste prepared by adding an appropriate amount of CdCl2 to Te powder and using PG as a solvent was similarly screen-printed (
7) Form a CdTe sintered film 3 by applying it in a pattern and firing it in a belt conveyor furnace. On top of this, CdT
At the same time as converting the e-sintered film 3 into a P-type, print carbon paste in a desired pattern that makes ohmic contact with the CdTe sintered film 3, and heat-treat it to obtain a carbon film 4.
Form a dS/CdTe heterojunction.
更にＣｄＳ焼結膜２とオーミック接触するＡｇＩｎ電極
６と、カーボン膜４上のＡｑ電極６をスクリーン印刷し
コンベア炉焼成法によって焼成して太陽電池素子を製造
している。Further, an AgIn electrode 6 in ohmic contact with the CdS sintered film 2 and an Aq electrode 6 on the carbon film 4 are screen printed and fired by a conveyor furnace firing method to produce a solar cell element.
ここでのＣｄＴｅ膜の焼結プロセスはＣｄＳに較べて複
雑である。ベースとなるＣｃｌＳ、ＣｄＳ表面に存在す
る微量のＣｄＣｌ２、前記微粉末中に含まれるＣｄやＴ
ｅ、無定形ＣｄＴｅおよび同微粉末中に添加するＣｄＣ
ｌ２が微妙に影響しあいＣｄＴｅ膜を形成する（例えば
、特開昭５６−３２３１０号公報）。The sintering process of the CdTe film here is more complicated than that of CdS. CclS as a base, a trace amount of CdCl2 present on the CdS surface, Cd and T contained in the fine powder.
e, amorphous CdTe and CdC added to the same fine powder
The CdTe film is formed by the slight influence of l2 (for example, Japanese Patent Application Laid-Open No. 56-32310).
発明が解決しようとする問題点
しかしながら上記のような構造では、ＣｄＣｌ２および
Ｃｄ、Ｔｅの蒸発速度がＣｄＴｅ結晶の粒径を大幅に左
右している。すなわちＣｄＣｌ２及びＣｄ 、 Ｔｅの
蒸発速度が速いと結晶粒径が小さくなる。同一素子のＣ
ｄＴｅ膜において、周辺と中央とでは、焼成時のＣｄＣ
ｌ２蒸発速度が異なり、周辺の結晶粒径が中央に比較し
て大幅に低下する。Problems to be Solved by the Invention However, in the structure described above, the evaporation rate of CdCl2, Cd, and Te greatly influences the grain size of the CdTe crystal. That is, the faster the evaporation rate of CdCl2, Cd, and Te, the smaller the crystal grain size. C of the same element
In the dTe film, CdC at the periphery and center during firing
The l2 evaporation rate is different, and the crystal grain size at the periphery is significantly reduced compared to the center.
本発明は、焼結後のＣｄＴｅ膜の周辺と中央の結晶粒径
バラツキを減少させた光起電力素子の製造方法を提供す
るものである。The present invention provides a method for manufacturing a photovoltaic device in which variation in crystal grain size between the periphery and the center of a CdTe film after sintering is reduced.
問題点を解決するための手段
上記問題点を解決するために本発明の光起電力素子の製
造方法は、ＣｄＴｅ膜を素子部分とともに、これとは分
離して基板の周辺部分にも形成するものである。Means for Solving the Problems In order to solve the above problems, the method for manufacturing a photovoltaic device of the present invention includes forming a CdTe film on the device portion as well as on the peripheral portion of the substrate separately from this. It is.
作 用
本発明は上記した構成によって、素子周辺に印刷された
ＣｄＴｅ層中のＣｄＣｌ２およびＣｄ 、 Ｔｏの蒸発
により、素子自身のＣｄＴｅ層周辺からのＣｄＣｌ２お
よびＣｄ 、 Ｔｏの蒸発量が大幅に減少でき、基板周
辺部分の結晶粒径を増加させることができる。すなわち
、ＣｄＴａ膜の中央と周辺との差をなくすことができる
ものである。Effect of the Invention With the above-described configuration, the present invention can greatly reduce the amount of evaporation of CdCl2, Cd, To from around the CdTe layer of the element itself by evaporating CdCl2, Cd, To in the CdTe layer printed around the element. , it is possible to increase the crystal grain size in the peripheral portion of the substrate. That is, it is possible to eliminate the difference between the center and the periphery of the CdTa film.
実施例
以下発明の一実施例の光起電力素子の製造方法九ついて
、図面を参照しながら説明する。EXAMPLE Hereinafter, a method for manufacturing a photovoltaic device according to an example of the present invention will be described with reference to the drawings.
第１図Ａ、Ｂは本発明の実施例における光起電力素子の
平面図及び断面図を示すものである。粒径数ミクロンの
高純度ＣｄＳに５重量％のＺｎＳおよび１０重量％のＣ
ｄＣｌ２を加えＰＧを溶媒として作製したペーストを図
面に示すように、アルカリ含有量０．３重量％以下のバ
リウム硼珪酸ガラス基板１上にスクリーン印刷する。次
に印刷したＣｄＳ層をベルトコンベア炉にて焼成するこ
とによりＺｎＳとの固溶体であるＣｄＳ焼結膜２を製造
する。FIGS. 1A and 1B show a plan view and a sectional view of a photovoltaic device according to an embodiment of the present invention. 5 wt% ZnS and 10 wt% C in high purity CdS with a particle size of several microns.
A paste prepared by adding dCl2 and using PG as a solvent is screen printed on a barium borosilicate glass substrate 1 having an alkali content of 0.3% by weight or less, as shown in the drawing. Next, the printed CdS layer is fired in a belt conveyor furnace to produce a CdS sintered film 2 which is a solid solution with ZnS.
次にＣｄＳ焼結膜２上に同じくスクリーン印刷法で所望
のパターンのＣｄＴｅ層を塗布する。この時図に示す様
に光起電力素子の外形を決定する膜（この場合はＣｄＳ
膜）の周辺における不要ガラス基板上にＣｄＳ膜から距
離Ｄ （ｒｍ ）だけ離して、幅Ｑｍｍ）のＣｄＴｅ層
を同時に印刷する。次に印刷したＣｄＴ ｅ層をベルト
コンベア炉で焼成することによってＣｄＴａ膜３を形成
する。この上に、ＣｄＴｅ焼結膜 ３をＰ型化すると
同時にＣｄＴｅ焼結膜３とオーミックな接触をするカー
ボンペーストを所Ｗのパターンで印刷し、熱処理を行う
ことによりカーボン膜４を得、Ｃｄ Ｓ ／Ｃｄ Ｔ
ｅヘテロ接合を形成する。Next, a CdTe layer with a desired pattern is applied onto the CdS sintered film 2 by the same screen printing method. At this time, as shown in the figure, the film (in this case, CdS) that determines the external shape of the photovoltaic element
A CdTe layer of width Q mm) is simultaneously printed on the unnecessary glass substrate in the periphery of the CdS film at a distance D (rm ) from the CdS film. Next, the CdTa film 3 is formed by firing the printed CdTe layer in a belt conveyor furnace. On top of this, a carbon paste that makes ohmic contact with the CdTe sintered film 3 is printed in a pattern W at the same time as the CdTe sintered film 3 is made into a P type, and a carbon film 4 is obtained by heat treatment. T
e to form a heterojunction.
更にＣｄＳ焼結膜２とオーミック接触するＡｑＩｎ電匝
５電力５ボン膜４上のＡｑ電極６をスクリーン印刷しコ
ンベア炉焼成法によって焼成して太陽電池素子を製造し
た。Further, an Aq electrode 6 on the AqIn electrode 5, power 5, and carbon film 4 which was in ohmic contact with the CdS sintered film 2 was screen printed and fired by a conveyor furnace firing method to produce a solar cell element.
以上のように構成された光起電力素子周辺のガラス基板
上に形成したＣｄＴｅ膜のＤおよびＷの値とその素子の
白色帯光灯２００ルックス下の最大出力を第１表に示す
。ただし、素子におけるＣｄＴｅ膜はＣｄＳ膜の周囲か
ら０．２ｍだけ小さい。Table 1 shows the values of D and W of the CdTe film formed on the glass substrate around the photovoltaic element constructed as described above and the maximum output of the element under 200 lux of a white band lamp. However, the CdTe film in the element is smaller by 0.2 m from the periphery of the CdS film.
表に示す通り、不要ガラス基板上にＣｄＴｅ膜を印刷す
ることによって特性の向上が見られる。特に光起電力素
子の周辺から３６以内の距離に位置し、その膜の幅Ｗが
３ｗ以上ある時、その効果が大きいことがわかる。As shown in the table, the characteristics are improved by printing a CdTe film on an unnecessary glass substrate. It can be seen that the effect is particularly great when the film is located within 36 cm from the periphery of the photovoltaic element and the width W of the film is 3 w or more.
この素子特性の向上は、周辺部分のＣｄＴｅ結晶粒径の
増大によるもの°と思われる。周辺のＣｄＴｅ結晶粒径
もＤを小さくＷを大きくすると増大することが、金属顕
微鏡観察で確認できた。This improvement in device characteristics is thought to be due to an increase in the CdTe crystal grain size in the peripheral portion. It was confirmed by observation using a metallurgical microscope that the diameter of the surrounding CdTe crystal grains also increases when D is decreased and W is increased.
第１表
以上のように本実施例によれば、ＣｄＴｅ膜を基板周辺
の部分にも形成することによって、ＣｄＴｅ膜周辺の結
晶粒径が増大し、光電変換特性を向上させることができ
る。As shown in Table 1 and above, according to this example, by forming the CdTe film also in the peripheral portion of the substrate, the crystal grain size around the CdTe film increases, and the photoelectric conversion characteristics can be improved.
なお実施例において１個の光起電力素子をＣｄＴｅ膜で
かこんだが、数個の光起電力素子をＣｄＴｅ膜で−まと
めにかこんでもよい。その場合基板周辺に位置する光起
電力素子の特性が向上し、基板位置によるバラツキが減
少できる。In the embodiment, one photovoltaic element is surrounded by a CdTe film, but several photovoltaic elements may be surrounded by a CdTe film. In this case, the characteristics of the photovoltaic elements located around the substrate are improved, and variations depending on the substrate position can be reduced.
発明の効果
以上のように本発明は、ガラス基板の周辺上にＣｄＴｅ
膜を印刷焼成することによって光起電力素子の光電特性
を向上させることができる。Effects of the Invention As described above, the present invention provides CdTe on the periphery of a glass substrate.
By printing and baking the film, the photoelectric properties of the photovoltaic device can be improved.
第１図（ぺは本発明の実施例における光起電力素子の平
面図、同図（Ｂ）はＡのＢ −Ｂ’線に沿った断面図、
第２図に）は従来の光起電力素子の平面図、第２図（勾
、Ｇｌ：）、（Ｉｌｌは（３）のＢ−Ｂ’線、ｃ−ｃ’
線、Ｄ−Ｄ′線に沿った各断面図である。
１・・・・・・ガラス基板、２・・・・・・ＣｄＳ膜、
３・・・・・・ＣｄＴｅ膜、４・・・・・・カーボン膜
、６・・・・・・ＡｇＩｎ電極、６・・・・・・Ａｑ電
極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名３−
−−ＣｄＴｅ膜
牛−一−カーご）謄FIG. 1 (P is a plan view of a photovoltaic device in an embodiment of the present invention, FIG. 1 (B) is a sectional view taken along the line B-B' of A,
Figure 2) is a plan view of a conventional photovoltaic element, Figure 2 (angle, Gl:), (Ill is line BB' of (3), c-c'
FIG. 1...Glass substrate, 2...CdS film,
3...CdTe film, 4...Carbon film, 6...AgIn electrode, 6...Aq electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person3-
--CdTe membrane cow-1-cargo)
Claims (4)
導体からなる第１の焼結膜を形成し、さらにその上にＣ
ｄＴｅよりなる第２の焼結膜を形成した後、前記２つの
焼結膜に電極を形成して光起電力素子を製造するに際し
、前記第２の焼結膜を前記素子をとり囲むよう基板の周
辺部分にも形成することを特徴とする光起電力素子の製
造方法。(1) A first sintered film made of CdS or a compound semiconductor containing Cd and S is formed on the substrate, and then CdS is formed on the first sintered film.
After forming a second sintered film made of dTe, when manufacturing a photovoltaic device by forming electrodes on the two sintered films, the second sintered film is attached to a peripheral portion of the substrate so as to surround the device. A method for manufacturing a photovoltaic element, characterized in that it also forms a photovoltaic element.
１項記載の光起電力素子の製造方法。(2) The method for manufacturing a photovoltaic device according to claim 1, wherein a glass plate is used as the substrate.
子の周辺から３ｍｍ以内の距離に位置し、かつその膜の
幅は３ｍｍ以上ある特許請求の範囲第１項記載の光起電
力素子の製造方法。(3) The photovoltaic device according to claim 1, wherein the film formed on the periphery of the substrate is located within 3 mm from the periphery of the photovoltaic element, and has a width of 3 mm or more. Method of manufacturing elements.
トをスクリーン印刷する工程からなり、光起電力素子用
膜と基板の周辺部分に形成する膜とを同時にスクリーン
印刷する特許請求の範囲第１項記載の光起電力素子の製
造方法。(4) Claims in which the step of forming the second sintered film comprises a step of screen printing a thin film forming paste, and the photovoltaic element film and the film to be formed on the peripheral portion of the substrate are simultaneously screen printed. 2. A method for manufacturing a photovoltaic device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61239510A JPS6393169A (en) | 1986-10-08 | 1986-10-08 | Manufacture of photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61239510A JPS6393169A (en) | 1986-10-08 | 1986-10-08 | Manufacture of photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6393169A true JPS6393169A (en) | 1988-04-23 |
| JPH055384B2 JPH055384B2 (en) | 1993-01-22 |
Family
ID=17045863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61239510A Granted JPS6393169A (en) | 1986-10-08 | 1986-10-08 | Manufacture of photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6393169A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922891A (en) * | 1972-06-21 | 1974-02-28 | ||
| JPS5237785A (en) * | 1975-09-20 | 1977-03-23 | Agency Of Ind Science & Technol | Process for production of photovoltaic elements |
| JPS60100482A (en) * | 1983-11-05 | 1985-06-04 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converting semicoductor device |
-
1986
- 1986-10-08 JP JP61239510A patent/JPS6393169A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922891A (en) * | 1972-06-21 | 1974-02-28 | ||
| JPS5237785A (en) * | 1975-09-20 | 1977-03-23 | Agency Of Ind Science & Technol | Process for production of photovoltaic elements |
| JPS60100482A (en) * | 1983-11-05 | 1985-06-04 | Semiconductor Energy Lab Co Ltd | Manufacture of photoelectric converting semicoductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH055384B2 (en) | 1993-01-22 |
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