JPH06263442A - Production of powdery agins2 and agins2 film - Google Patents
Production of powdery agins2 and agins2 filmInfo
- Publication number
- JPH06263442A JPH06263442A JP5079014A JP7901493A JPH06263442A JP H06263442 A JPH06263442 A JP H06263442A JP 5079014 A JP5079014 A JP 5079014A JP 7901493 A JP7901493 A JP 7901493A JP H06263442 A JPH06263442 A JP H06263442A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- agins
- film
- agins2
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、太陽電池に代表される
光電変換素子の材料として使用されるＡｇＩｎＳ2 （銀
インジウム硫化物）の粉末およびその膜の製造方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a powder of AgInS 2 (silver indium sulfide) used as a material for a photoelectric conversion element represented by a solar cell and a method for producing a film thereof.
【０００２】[0002]
【従来の技術】光電変換素子に使用される半導体材料
は、一般にチョクラルスキー法や引上げ法などに代表さ
れる結晶成長法によって製造されてきた。2. Description of the Related Art Semiconductor materials used for photoelectric conversion elements have generally been manufactured by a crystal growth method represented by the Czochralski method and the pulling method.
【０００３】これは、ＣｕＩｎＳｅ2 、ＡｇＩｎＳ2 な
どに代表されるＩ−ＩＩＩ−ＶＩ属材料についても同様
であり、例えば“１９９２年秋季応用物理学会予稿集
ｐ．１１２５”によれば、何件かの固相結晶成長法の試
みが報じられている。This also applies to I-III-VI group materials represented by CuInSe 2 , AgInS 2 and the like. For example, according to "Autumn Society of Applied Physics, 1992 Proceedings, p. 1125", there are several cases. The solid phase crystal growth method has been reported.
【０００４】しかし、それらは、いずれも、結晶の成長
条件の抑制を厳密にしなければならなかったり、ワンバ
ッチで製造できる量が少なかったりで、実用化がむつか
しいという問題があった。However, each of them has a problem that it is difficult to put them into practical use because it is necessary to strictly control the growth conditions of crystals and the amount that can be produced in one batch is small.
【０００５】また、特開昭６４−６４３６９号公報に
は、各成分粉末または化合物を機械的に混合することに
よってＣｕＩｎＳｅ2 粉末を得ることが報告されてい
る。しかし、それはＣｕＩｎＳｅ2 に限られていて、Ａ
ｇＩｎＳ2 についてはまったく触れられておらず、した
がって、ＡｇＩｎＳ2 については実用性に優れた製造方
法が確立されていない。Further, Japanese Patent Laid-Open No. 64-64369 reports that CuInSe 2 powder is obtained by mechanically mixing each component powder or compound. However, it is limited to CuInSe 2 and
not mention at all about the GINS 2, therefore excellent production method for practical use has not been established for AgInS 2.
【０００６】[0006]
【発明が解決しようとする課題】本発明は、従来のＡｇ
ＩｎＳ2 の製造方法における問題点を解決し、生産性の
優れたＡｇＩｎＳ2 粉末およびＡｇＩｎＳ2 膜の製造方
法を提供することを目的とする。The present invention is based on the conventional Ag method.
It is an object of the present invention to solve the problems in the method for producing InS 2 and to provide a method for producing an AgInS 2 powder and an AgInS 2 film having excellent productivity.
【０００７】[0007]
【課題を解決するための手段】本発明は、Ａｇ（銀）粉
末またはＡｇ硫化物粉末と、Ｉｎ（インジウム）粉末ま
たはＩｎ硫化物粉末と、硫黄粉末とを混合し、得られた
混合物を熱処理することによってＡｇＩｎＳ2 粉末を製
造し、また得られたＡｇＩｎＳ2 粉末を溶剤と混合して
ペースト状にし、そのペースト状混合物を基板上に塗布
し、熱処理することによってＡｇＩｎＳ2 膜を製造する
ことにより、上記目的を達成したものである。According to the present invention, Ag (silver) powder or Ag sulfide powder, In (indium) powder or In sulfide powder, and sulfur powder are mixed, and the resulting mixture is heat treated. by manufacture AgInS 2 powder, also AgInS 2 powder was mixed with a solvent into a paste, coating the paste mixture onto a substrate to produce a AgInS 2 film by heat treatment by The above-mentioned object is achieved.
【０００８】上記製造方法を詳細に説明すると、ＡｇＩ
ｎＳ2 粉末の製造にあたっては、まず、各成分を製造し
たいＡｇＩｎＳ2 の組成と同一組成になるように秤量
し、それらを混合する。その際の混合方法としては、あ
る程度のエネルギーを有する方法でないと充分に均一な
混合が行なわれず、熱処理による合成が円滑に進行しな
くなるので、ボールミルやサンドミルなどの機械的な混
合方法を採用することが好ましい。The above manufacturing method will be described in detail.
In producing the nS 2 powder, first, each component is weighed so as to have the same composition as AgInS 2 to be produced, and they are mixed. As a mixing method at that time, unless the method has a certain amount of energy, sufficiently uniform mixing cannot be performed, and the synthesis by heat treatment will not proceed smoothly.Therefore, use a mechanical mixing method such as a ball mill or a sand mill. Is preferred.
【０００９】混合時の回転速度を一定にすると、混合時
間に伴って混合物の粒径は小さくなるので、混合時間は
長いほどよいが、通常は５０〜２００時間程度が採用さ
れる。If the rotation speed during mixing is kept constant, the particle size of the mixture becomes smaller with the mixing time, so the longer the mixing time is, the better, but usually about 50 to 200 hours is adopted.
【００１０】混合直後の粉末はＡｇＩｎＳ2 以外にＡｇ
Ｉｎ5 Ｓ8 が生成していたり、Ｉｎ硫化物が残存してい
ることがあるが、それらは次の熱処理によって消滅す
る。Immediately after mixing, the powder was AgInS 2 as well as Ag.
In 5 S 8 may be generated or In sulfide may remain, but they disappear by the next heat treatment.
【００１１】熱処理時の温度は高温になるほどＡｇＩｎ
Ｓ2 の合成に好適となり、７００℃以上ではＸ線回折に
よってもＡｇ硫化物、Ｉｎ硫化物、ＡｇＩｎ5 Ｓ8 など
がまったく観察されなくなり、通常７００〜８５０℃程
度の温度で熱処理される。また、熱処理時間は熱処理温
度にもよるが１〜１０時間程度が好ましい。As the temperature during heat treatment increases, the AgIn
It is suitable for the synthesis of S 2 , and Ag sulfide, In sulfide, AgIn 5 S 8 and the like are not observed at all by X-ray diffraction at 700 ° C. or higher, and heat treatment is usually performed at a temperature of 700 to 850 ° C. The heat treatment time is preferably about 1 to 10 hours, though it depends on the heat treatment temperature.
【００１２】そして、この熱処理は、ＡｇＩｎＳ2 やそ
の原料成分の酸化を防止するために、例えばＮ2 （窒
素）雰囲気、Ｈ2 （水素）雰囲気、あるいはＡｒ（アル
ゴン）雰囲気などの不活性ガス雰囲気など、酸素を含ま
ない雰囲気中で行なうのが好ましい。In order to prevent the oxidation of AgInS 2 and its raw material components, this heat treatment is carried out in an inert gas atmosphere such as N 2 (nitrogen) atmosphere, H 2 (hydrogen) atmosphere or Ar (argon) atmosphere. It is preferable to carry out in an atmosphere containing no oxygen.
【００１３】ＡｇＩｎＳ2 の製造にあたり、Ａｇ（銀）
成分としてはＡｇ粉末またはＡｇ硫化物粉末が用いられ
るが、そのＡｇ硫化物としては例えばＡｇ2 Ｓなどが挙
げられる。また、Ｉｎ（インジウム）成分としてはＩｎ
粉末またはＩｎ硫化物粉末が用いられるが、そのＩｎ硫
化物としては例えばＩｎＳ、Ｉｎ2 Ｓ3 などが挙げられ
る。In manufacturing AgInS 2 , Ag (silver)
Ag powder or Ag sulfide powder is used as the component, and examples of the Ag sulfide include Ag 2 S and the like. In addition, as the In (indium) component, In
Powder or In sulfide powder is used, and examples of the In sulfide include InS and In 2 S 3 .
【００１４】Ａｇ粉末またはＡｇ硫化物粉末と、Ｉｎ粉
末またはＩｎ硫化物粉末と、硫黄粉末との混合割合は、
化学量論的にＡｇＩｎＳ2 になるのが最も適正である
が、１０％程度ずれてもよい。The mixing ratio of Ag powder or Ag sulfide powder, In powder or In sulfide powder, and sulfur powder is
The most suitable is stoichiometrically AgInS 2 , but it may be shifted by about 10%.
【００１５】上記のようにして得られたＡｇＩｎＳ2 粉
末を用いてのＡｇＩｎＳ2 膜の製造は、上記ＡｇＩｎＳ
2 粉末に適当な溶剤、例えばプロピレングリコールなど
を加えて混合してペースト状にし、そのペースト状混合
物を例えばガラス板、Ａｌ2Ｏ3 セラミックスなどに代
表されるように７００℃以上で成分がＡｇＩｎＳ2 に拡
散しない基板上にスクリーン印刷法などにより塗布し、
熱処理することによって行なわれる。そして、基板上に
形成されたＡｇＩｎＳ2 は基板から剥がして使用に供し
てもよいし、また基板上に形成した状態でその基板と共
に使用に供してもよい。The AgInS 2 film is produced by using the AgInS 2 powder obtained as described above.
2 powder in a suitable solvent, for example, mixed with the propylene glycol to form a paste, the paste mixture, for example a glass plate, Al 2 O 3 component 700 ° C. or higher, as typified by ceramics AgInS 2 It is applied by a screen printing method on a substrate that does not diffuse into
It is performed by heat treatment. The AgInS 2 formed on the substrate may be peeled off from the substrate for use, or may be formed on the substrate for use together with the substrate.
【００１６】上記溶剤との混合にあたってＡｇＩｎＳ2
粉末は、粒径が小さいほどペースト状混合物の塗布性が
良好になり、平均粒径５μｍ以下になると平滑な塗布膜
が得られるようになる。In mixing with the above solvent, AgInS 2
The smaller the particle size of the powder, the better the coatability of the paste mixture, and when the average particle size is 5 μm or less, a smooth coating film can be obtained.
【００１７】塗布後の熱処理は、ＡｇＩｎＳ2 と基板と
の密着性を高めたり、ＡｇＩｎＳ2を焼結させて膜強度
を高めるためのものであるが、この塗布後の熱処理温度
がＡｇＩｎＳ2 粉末製造時の熱処理温度より高い場合は
ＡｇＩｎＳ2 が結晶成長して粒子形状が大きく変化し膜
内応力が大きくなって膜剥がれが生じるようになるた
め、塗布後の熱処理温度はＡｇＩｎＳ2 粉末の製造時の
熱処理温度以下、つまりＡｇＩｎＳ2 粉末製造時の熱処
理温度と同温かまたはそれより低い温度であることが必
要である。The heat treatment after coating is intended to enhance the adhesion between AgInS 2 and the substrate or to sinter AgInS 2 to enhance the film strength. The heat treatment temperature after coating is the AgInS 2 powder production. If the temperature is higher than the heat treatment temperature at that time, the crystal growth of AgInS 2 causes a large change in the particle shape and the stress in the film increases, causing film peeling. Therefore, the heat treatment temperature after coating is the same as that at the time of manufacturing AgInS 2 powder. It is necessary that the temperature is equal to or lower than the heat treatment temperature, that is, the same as or lower than the heat treatment temperature at the time of producing the AgInS 2 powder.
【００１８】この塗布後の熱処理温度、つまりＡｇＩｎ
Ｓ2 膜製造時の熱処理温度は７００℃以上であることが
好ましく、また基板が熱に耐え、かつＡｇＩｎＳ2 粉末
製造時の熱処理温度以下であることが必要である。そし
て、この際の熱処理時間としては１〜１０時間が好まし
い。The heat treatment temperature after coating, that is, AgIn
The heat treatment temperature during the production of the S 2 film is preferably 700 ° C. or higher, and it is necessary that the substrate withstand the heat and be equal to or lower than the heat treatment temperature during the production of AgInS 2 powder. The heat treatment time at this time is preferably 1 to 10 hours.
【００１９】上記したようなＡｇＩｎＳ2 粉末やＡｇＩ
ｎＳ2 膜の製造方法によれば、混合に用いるミル（混合
装置）や熱処理装置は容易に大型化でき、またＡｇＩｎ
Ｓ2膜の形成にあたってのスクリーン印刷などが固相結
晶成長法による場合のスパッタリングなどの乾式膜形成
方法とは異なり設備が簡単で、生産性に富んでいるの
で、その結果として、安価なＡｇＩｎＳ2 粉末やＡｇＩ
ｎＳ2 膜を提供することができる。As described above, AgInS 2 powder and AgI
According to the nS 2 film manufacturing method, the mill (mixing device) and the heat treatment device used for mixing can be easily increased in size, and AgIn
Unlike the dry film forming method such as sputtering in which the solid-phase crystal growth method is used for the screen printing for forming the S 2 film, the equipment is simple and the productivity is high. As a result, the inexpensive AgInS 2 film is formed. Powder and AgI
An nS 2 film can be provided.
【００２０】上記のようにして得られたＡｇＩｎＳ2 粉
末やＡｇＩｎＳ2 膜は、主として光電変換素子の材料と
して用いられるが、同じ３元系のＣｕＩｎＳ2 などに比
べると融点が８７０℃と低いため（ＣｕＩｎＳ2 は１０
９０℃）、低温で加工しやすいというメリットがある。The AgInS 2 powder or AgInS 2 film obtained as described above is mainly used as a material for a photoelectric conversion element, but its melting point is 870 ° C. lower than that of the same ternary CuInS 2 ( CuInS 2 is 10
90 ° C), which has the advantage of being easy to process at low temperatures.
【００２１】また、現在盛んに研究されているｐ型Ｃｕ
ＩｎＳｅ2 との積層として太陽電池を形成する場合、Ｃ
ｕＩｎＳ2 がｐ型、ｎ型のコントロールがむつかしいの
に対して、ＡｇＩｎＳ2 は良好なｎ型を示すというメリ
ットがあり、またバンドキャップの点からもＣｕＩｎＳ
ｅ2 の１．１ｅＶと最も高効率が期待される１．７〜
１．９ｅＶのバンドキャップ（ＡｇＩｎＳ2 は１．９ｅ
Ｖ）を有しており、同じＡｇ系のＡｇＩｎＳｅ2 （１．
２ｅＶ）、ＡｇＧａＳ2 （２．８ｅＶ）に比べても有利
である。Further, p-type Cu, which is currently being actively studied,
When forming a solar cell as a stack with InSe 2 , C
UInS 2 is p-type, whereas the n-type controls are Mutsukashii, there is a merit that AgInS 2 shows a good n-type, also in terms of band gap CuInS
The highest efficiency of 1.1 eV of e 2 is expected to be 1.7 to
1.9 eV band cap (AgInS 2 is 1.9 eV)
V), and the same Ag-based AgInSe 2 (1.
2 eV) and AgGaS 2 (2.8 eV) are also advantageous.
【００２２】[0022]
【実施例】つぎに、実施例を挙げて本発明をより具体的
に説明する。ただし、本発明はそれらの実施例のみに限
定されるものではない。EXAMPLES Next, the present invention will be described more specifically with reference to examples. However, the present invention is not limited to only those examples.
【００２３】実施例１ Ａｇ粉末、Ｉｎ粉末、硫黄粉末をそれぞれ０．０５ｍｏ
ｌ、０．０５ｍｏｌ、０．１ｍｏｌ用意し、それらをボ
ールミル容器に仕込み、該容器をボールミルにセットし
た。１００時間混合後、ミルから取り出し、得られた混
合物粉末を乳鉢で軽く粉砕した後、７５０℃に設定した
Ｎ2 雰囲気中で２時間熱処理し、熱処理後、乳鉢で再度
粉砕してＡｇＩｎＳ2 粉末を得た。Example 1 Ag powder, In powder, and sulfur powder were each added in an amount of 0.05 mo.
1, 0.05 mol, 0.1 mol were prepared, these were charged in a ball mill container, and the container was set in a ball mill. After mixing 100 hours, removed from the mill, was lightly grinding the mixture powder obtained in a mortar, then heat-treated for 2 hours in a N 2 atmosphere was set to 750 ° C., after heat treatment, the AgInS 2 powder was ground again in a mortar Obtained.
【００２４】上記のようにして得られたＡｇＩｎＳ2 粉
末を１ｇ秤量し、それを４００ｋｇ／ｃｍ2 の圧力でコ
ールドプレスし、直径８ｍｍ、厚さ１ｍｍのＡｇＩｎＳ
2 ペレットを得た。1 g of the AgInS 2 powder obtained as described above was weighed and cold pressed at a pressure of 400 kg / cm 2 to obtain AgInS having a diameter of 8 mm and a thickness of 1 mm.
2 pellets were obtained.
【００２５】このＡｇＩｎＳ2 ペレットの一方の面に溶
融したＩｎ−Ｇａ（重量比１：１）合金を塗布し、Ａｇ
ペーストでニッケル線を固定し、最後に他面側からガラ
ス基板にエポキシ樹脂で固定した。Molten In-Ga (weight ratio 1: 1) alloy was applied to one surface of the AgInS 2 pellet to form Ag.
A nickel wire was fixed with a paste, and finally, a glass substrate was fixed with an epoxy resin from the other surface side.
【００２６】このようにして得られた半導体電極を用
い、対極には白金板を用い、電解液には０．０５ｍｏｌ
／ｌの水酸化カリウム水溶液を用いてセルを作製した。The semiconductor electrode thus obtained is used, a platinum plate is used as the counter electrode, and the electrolyte solution is 0.05 mol.
A cell was prepared using a potassium hydroxide aqueous solution of 1 / l.
【００２７】光源には３００Ｗキセノンランプを用い、
上記セルに光照射し、その照射時の電流と電圧を測定し
た。その結果を非照射時に測定した電流値および電圧値
と併せて図１に示す。A 300 W xenon lamp is used as a light source,
The cell was irradiated with light and the current and voltage during the irradiation were measured. The result is shown in FIG. 1 together with the current value and voltage value measured during non-irradiation.
【００２８】図１において、「光オン」とは光照射時を
示し、「光オフ」とは非照射時を示すが、この図１に示
すように、＋側の同電圧で比較したときの光照射時（光
オン）の電流値は非照射時（光オフ）の電流値より大き
く、得られたＡｇＩｎＳ2 粉末を用いて作製した半導体
電極から光電流が取り出せることが判明した。In FIG. 1, “light on” indicates the time when light is irradiated, and “light off” indicates the time when light is not irradiated. As shown in FIG. 1, when comparing at the same voltage on the + side, The current value during light irradiation (light on) was larger than the current value during non-irradiation (light off), and it was found that a photocurrent can be extracted from the semiconductor electrode manufactured using the obtained AgInS 2 powder.
【００２９】なお、得られたＡｇＩｎＳ2 の結晶性はＸ
線回折で調べたところ（１２１）主配向の斜方晶であっ
た。The crystallinity of the obtained AgInS 2 is X.
When examined by line diffraction, it was an orthorhombic crystal with a (121) main orientation.
【００３０】実施例２ Ａｇ粉末、Ｉｎ粉末、硫黄粉末をそれぞれ０．０５ｍｏ
ｌ、０．０５ｍｏｌ、０．１ｍｏｌ用意し、それらをボ
ールミル容器に仕込み、該容器をボールミルにセットし
た。１００時間混合後、ミルから取り出し、得られた混
合物粉末を乳鉢で軽く粉砕した後、８００℃に設定した
Ｎ2 雰囲気中で２時間熱処理し、熱処理後、乳鉢で再度
粉砕してＡｇＩｎＳ2 粉末を得た。Example 2 Ag powder, In powder, and sulfur powder were each added in an amount of 0.05 mo.
1, 0.05 mol, 0.1 mol were prepared, these were charged in a ball mill container, and the container was set in a ball mill. After mixing 100 hours, removed from the mill, was lightly grinding the mixture powder obtained in a mortar, then heat-treated for 2 hours in a N 2 atmosphere was set to 800 ° C., after heat treatment, the AgInS 2 powder was ground again in a mortar Obtained.
【００３１】得られたＡｇＩｎＳ2 粉末の粒径を測定し
たところ平均粒径４μｍであった。このＡｇＩｎＳ2 粉
末を４ｇ秤量し、これにポリプロピレングリコールを
０．８ｍｌ添加し、充分に混合してペースト状にした。
得られたペースト混合物をスクリーン印刷法によってガ
ラス基板〔Ｃｏｒｎｉｎｇ７０５９（商品名）ガラス〕
上に塗布した。The particle size of the obtained AgInS 2 powder was measured and found to be 4 μm in average particle size. 4 g of this AgInS 2 powder was weighed, 0.8 ml of polypropylene glycol was added thereto, and they were mixed sufficiently to form a paste.
The paste mixture thus obtained was screen-printed onto a glass substrate [Corning 7059 (trade name) glass].
Applied on top.
【００３２】塗布膜を焼結させるため、８００℃に設定
したＮ2 雰囲気中で２時間熱処理した。熱処理温度はＡ
ｇＩｎＳ2 の結晶性とガラス基板との密着性を考慮して
決定されるが、本実施例のようにガラス基板としてＣｏ
ｒｎｉｎｇ７０５９（商品名）ガラスを用いた場合には
８００℃が最適であった。In order to sinter the coating film, it was heat-treated in an N 2 atmosphere set at 800 ° C. for 2 hours. Heat treatment temperature is A
It is determined in consideration of the crystallinity of gInS 2 and the adhesiveness with the glass substrate.
When using running7059 (trade name) glass, 800 ° C. was optimum.
【００３３】ＡｇＩｎＳ2 膜の製造にあたって使用した
ＡｇＩｎＳ2 粉末の結晶構造は（１２１）主配向の斜方
晶であったが、ＡｇＩｎＳ2 膜におけるＡｇＩｎＳ2 の
結晶構造は膜製造時の熱処理によって（１１２）主配向
の正方晶（カルコパイライト構造）に変化していた。[0033] AgInS 2 crystal structure of AgInS 2 powder used in the production of film was the orthorhombic main orientation (121), the crystal structure of AgInS 2 in AgInS 2 film by heat treatment during film production (112 ) It changed into the tetragonal crystal (chalcopyrite structure) of the main orientation.
【００３４】[0034]
【発明の効果】以上説明したように、本発明では、Ａｇ
粉末またはＡｇ硫化物粉末と、Ｉｎ粉末またはＩｇ硫化
物粉末と、硫黄粉末を混合し、得られた混合物を熱処理
することによって、ＡｇＩｎＳ2 粉末を容易に製造する
ことができるようになった。As described above, according to the present invention, Ag
By mixing powder or Ag sulfide powder, In powder or Ig sulfide powder, and sulfur powder, and heat-treating the obtained mixture, AgInS 2 powder can be easily manufactured.
【００３５】このような本発明の方法によれば、従来の
固相結晶成長法に比べて生産性が優れており、太陽電池
などの光電変換素子用の材料として有望なＡｇＩｎＳ2
粉末を安価に提供することができるようになった。According to the method of the present invention as described above, the productivity is excellent as compared with the conventional solid phase crystal growth method, and AgInS 2 which is promising as a material for photoelectric conversion elements such as solar cells.
The powder can now be provided at low cost.
【００３６】また、上記ＡｇＩｎＳ2 粉末を用いて製造
したＡｇＩｎＳ2 膜を光電変換素子に用いることによ
り、太陽電池の最も重要課題である低コストが可能にな
る。Further, by using the AgInS 2 film produced by using the above AgInS 2 powder for the photoelectric conversion element, it becomes possible to reduce the cost which is the most important issue of the solar cell.
【図１】ＡｇＩｎＳ2 ペレットを用いた半導体電極と、
白金板からなる対極を備え、電解液として０．０５ｍｏ
ｌ／ｌの水酸化カリウム水溶液を用いたセルの電流−電
圧特性を示す図である。FIG. 1 is a semiconductor electrode using AgInS 2 pellets,
Equipped with a counter electrode consisting of a platinum plate, with an electrolyte of 0.05mo
It is a figure which shows the current-voltage characteristic of the cell which used the 1 / l potassium hydroxide aqueous solution.
Claims (8)
粉末またはＩｎ硫化物粉末と、硫黄粉末とを混合し、得
られた混合物を熱処理することを特徴とするＡｇＩｎＳ
2 粉末の製造方法。1. Ag powder or Ag sulfide powder and In
Powder or In sulfide powder, and sulfur powder are mixed, and the obtained mixture is heat-treated.
2 Powder manufacturing method.
械的混合によって行なうことを特徴とする請求項１記載
のＡｇＩｎＳ2 粉末の製造方法。 2. The method for producing AgInS 2 powder according to claim 1, wherein the mixing is performed by mechanical mixing such as a ball mill or a sand mill.
うことを特徴とする請求項１記載のＡｇＩｎＳ2 粉末の
製造方法。3. The method for producing AgInS 2 powder according to claim 1, wherein the heat treatment is performed in an atmosphere containing no oxygen.
徴とする請求項１記載のＡｇＩｎＳ2 粉末の製造方法。4. The method for producing AgInS 2 powder according to claim 1, wherein the heat treatment is performed at 700 ° C. or higher.
と混合してペースト状にし、そのペースト状混合物を基
板上に塗布し、熱処理することを特徴とするＡｇＩｎＳ
2 膜の製造方法。5. The AgInS 2 powder according to claim 1, which is mixed with a solvent to form a paste, and the paste mixture is applied onto a substrate and heat-treated.
2 Membrane manufacturing method.
を特徴とする請求項５記載のＡｇＩｎＳ2 膜の製造方
法。6. The method for producing an AgInS 2 film according to claim 5, wherein the solvent is propylene glycol.
ｇＩｎＳ2 粉末製造時の熱処理温度以下であることを特
徴とする請求項５記載のＡｇＩｎＳ2 膜の製造方法。7. The heat treatment temperature at the time of manufacturing the AgInS 2 film is A
The method for producing an AgInS 2 film according to claim 5, wherein the temperature is not higher than the heat treatment temperature at the time of producing the gInS 2 powder.
粒径が５μｍ以下であることを特徴とする請求項５記載
のＡｇＩｎＳ2 膜の製造方法。8. The method for producing an AgInS 2 film according to claim 5, wherein the AgInS 2 powder mixed with the solvent has an average particle size of 5 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5079014A JPH06263442A (en) | 1993-03-12 | 1993-03-12 | Production of powdery agins2 and agins2 film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5079014A JPH06263442A (en) | 1993-03-12 | 1993-03-12 | Production of powdery agins2 and agins2 film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06263442A true JPH06263442A (en) | 1994-09-20 |
Family
ID=13678097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5079014A Withdrawn JPH06263442A (en) | 1993-03-12 | 1993-03-12 | Production of powdery agins2 and agins2 film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06263442A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6852657B2 (en) | 2001-08-22 | 2005-02-08 | Schott Glas | Optical colored glasses |
| US7960306B2 (en) | 2008-05-28 | 2011-06-14 | Industrial Technology Research Institute | Photo-energy transformation catalysts and methods for fabricating the same |
-
1993
- 1993-03-12 JP JP5079014A patent/JPH06263442A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6852657B2 (en) | 2001-08-22 | 2005-02-08 | Schott Glas | Optical colored glasses |
| US7960306B2 (en) | 2008-05-28 | 2011-06-14 | Industrial Technology Research Institute | Photo-energy transformation catalysts and methods for fabricating the same |
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