JPS6393170A - Photovoltaic element and manufacture thereof - Google Patents
Photovoltaic element and manufacture thereofInfo
- Publication number
- JPS6393170A JPS6393170A JP61239511A JP23951186A JPS6393170A JP S6393170 A JPS6393170 A JP S6393170A JP 61239511 A JP61239511 A JP 61239511A JP 23951186 A JP23951186 A JP 23951186A JP S6393170 A JPS6393170 A JP S6393170A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- cdte
- cds
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 38
- 239000011148 porous material Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims 7
- 238000005245 sintering Methods 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
- 238000010304 firing Methods 0.000 abstract description 8
- 229910052799 carbon Inorganic materials 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 6
- 239000011521 glass Substances 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 27
- 230000000694 effects Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、太陽電池などに使用可能な薄膜型ＣｄＳ／Ｃ
ｄＴｅ構造の光起電力素子およびその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention is directed to thin film type CdS/C which can be used in solar cells, etc.
The present invention relates to a photovoltaic device having a dTe structure and a method for manufacturing the same.
従来の技術
従来、ＣｄＳ／ＣｄＴｅ構造の光起電力素子の製造技術
の一つとしてスクリーン印刷と、ベルトコンベア炉によ
る焼成を利用した製造方法がある。この方法の特徴は簡
単に実施でき、かつ量産性に富み、大面積化が可能な安
価な光起電力素子が得られることにある。2. Description of the Related Art Conventionally, as one of the manufacturing techniques for photovoltaic elements having a CdS/CdTe structure, there is a manufacturing method using screen printing and firing in a belt conveyor furnace. The feature of this method is that it is easy to implement, has high mass productivity, and can produce inexpensive photovoltaic elements that can be made into a large area.
以下図面を参照しながら、上述した従来のＣｄＳ／Ｃｄ
Ｔｅ構造の光起電力素子の一例について説明する。The conventional CdS/Cd described above will be described below with reference to the drawings.
An example of a photovoltaic element having a Te structure will be described.
第２図は、これまでの製造方法により得られている薄膜
型太陽電池の断面図である。ガラス基板１上にスクリー
ン印刷法でＣｃｉＳ層を塗布し、焼成してＣｄＳ膜２を
形成し、ついで同様にＣｄＴｅペーストを印刷塗布しベ
ルトコンベア炉にて焼成することにより平担で気孔の少
ないＣｄＴｅ焼結膜３を得、ＣｄＳ／ＣｄＴｅヘテロ接
合を形成する。この上にＣｄＴｅ膜とオーミック接触す
るカーボン膜４、およびＣｄＳ膜２とオーミック接触す
る電極層５をそれぞれ形成し、それらにリード線６を取
りつけて、薄膜太陽電池を得ていた（例えば特開昭５７
−１３７７５号公報）。FIG. 2 is a cross-sectional view of a thin film solar cell obtained by a conventional manufacturing method. A CciS layer is coated on a glass substrate 1 by screen printing and fired to form a CdS film 2. Then, a CdTe paste is similarly printed and fired in a belt conveyor furnace to form a flat CdTe layer with few pores. A sintered film 3 is obtained to form a CdS/CdTe heterojunction. A carbon film 4 in ohmic contact with the CdTe film and an electrode layer 5 in ohmic contact with the CdS film 2 were formed thereon, and lead wires 6 were attached to them to obtain a thin film solar cell (for example, 57
-13775).
発明が解決しようとする問題点
しかしながら、このようにして作られたＣｄＳ／ＣｄＴ
ｅ太陽電池の出力特性を制限する要因としては、ＣｄＳ
層とＣｄＴｅ層の膜厚がある。一般に異種の半導体材料
により接合を形成したヘテロ接合型太陽電池の光電変換
特性を制限する要因の一つに、この半導体層の厚みの問
題がある。Problems to be Solved by the Invention However, the CdS/CdT produced in this way
The factors that limit the output characteristics of e-solar cells include CdS
There is a film thickness of the CdTe layer and the CdTe layer. In general, one of the factors that limits the photoelectric conversion characteristics of heterojunction solar cells in which junctions are formed using different types of semiconductor materials is the problem of the thickness of this semiconductor layer.
本発明は、薄膜形成技術により生じる膜厚による光電変
換特性の制限を改善することを目的とするものである。The present invention aims to improve the limitations on photoelectric conversion characteristics caused by film thickness caused by thin film formation techniques.
問題点を解決するための手段
上記問題点を解決するために本発明の光起電力素子は、
ＣｄＴｅ膜を、薄い帯状の気孔の少ない膜部分と、多孔
質の膜部分とから構成し、印刷後の膜厚は同じであって
も、焼成後の膜厚を実質的に減少させたものである。Means for Solving the Problems In order to solve the above problems, the photovoltaic device of the present invention includes:
The CdTe film is composed of a thin band-shaped film part with few pores and a porous film part, and even though the film thickness after printing is the same, the film thickness after firing is substantially reduced. be.
作 用
本発明は、上記した構成によってカーボンの印刷塗布時
にＣｄＴｅ膜の多孔質層へ入れ込み、実質上ＣｄＴａ層
との接触面積を増やす働きをする。またカーボンが気孔
の少ないＣｄＴｅ層の近傍まで入れ込むことによって実
質的にＣｄＴｅ層が薄くなった働きをし、キャリアの集
収効率の向上に役立つ。Function The present invention has the above-described structure, and when carbon is printed and coated, it is introduced into the porous layer of the CdTe film, thereby substantially increasing the contact area with the CdTa layer. Further, by introducing carbon into the vicinity of the CdTe layer, which has few pores, the CdTe layer substantially becomes thinner, which helps improve the carrier collection efficiency.
実施例
以下本発明の実施例の光起電力素子とその製造方法につ
いて図面を参照しながら説明する。EXAMPLES Hereinafter, photovoltaic devices and methods of manufacturing the same according to examples of the present invention will be described with reference to the drawings.
第１図は、本発明の実施例における光起電力素子の断面
図を示すものである。粒径数ミクロンの高純度ＣｄＳに
６重量％のＺｎＳおよび融剤として２０重量％のＣｄＣ
ｌ２を加え、プロピノングリコール（ＰＧ）を溶媒とし
て作製したペーストを、ガラス基板上７に２５０メノン
ユのステンレススクリーンを用いて印刷し、アルミナ製
焼成容器に入れてベルト式焼成炉にて焼成温度６９０ｔ
で約１時間焼成した。このＣｄＳ膜８上に２００メツシ
ユのステンレススクリーンを用い、適量のＣｄＣｌ２量
を添加したＣｄＴｅ層を塗布形成する。このｑｄＴｅ層
を焼成温度５４０１：〜７００℃で１時間焼成した。FIG. 1 shows a cross-sectional view of a photovoltaic element in an example of the present invention. High purity CdS with a particle size of several microns, 6% by weight of ZnS and 20% by weight of CdC as a flux.
A paste prepared by adding l2 and using propinone glycol (PG) as a solvent was printed on a glass substrate 7 using a stainless steel screen of 250 mm, placed in an alumina firing container, and fired at a temperature of 690 t in a belt-type firing furnace.
It was baked for about 1 hour. On this CdS film 8, a CdTe layer doped with an appropriate amount of CdCl2 is formed by applying a 200-mesh stainless steel screen. This qdTe layer was fired at a firing temperature of 5401:-700°C for 1 hour.
このようＫして得られたＣｄＴｅ層９は、ＣｄＳ膜と接
して薄い帯状の気孔の少ないＣｄＴｅ層（その膜厚をＤ
１μｍとする）と、その上に形成された多孔質なＣｄＴ
ｅ層（その膜厚をＤ ２ ｐｒｒｓとする）からなる。The CdTe layer 9 obtained by K in this way is a thin strip-like CdTe layer with few pores (its film thickness is D) in contact with the CdS film.
1 μm) and porous CdT formed on it.
It consists of an e layer (its film thickness is D 2 prrs).
両者の膜厚Ｄ１．Ｄ２は、バースト中のＣｄＣＡ２量及
び焼成温度によって決定される。表面部分の多孔質Ｃｄ
Ｔｅ層の下の気孔のない均質なＣｄＴｅ層によりＣｄＳ
／ＣｄＴｅ接合の接合特性が決まるため、この多孔質層
を表面にもつＣｄＴｅ層９を用いても接合特性が悪くな
ることはなく、逆に有効に働くＣｄＴｅ層の厚みが減少
した効果をもたらし、素子の直列抵抗を減少させている
。このＣｄＴｅ層９の上にカーボンを印刷塗布し焼成す
ることによってオーミック電極１０を形成する。Both film thicknesses D1. D2 is determined by the amount of CdCA2 in the burst and the firing temperature. Porous Cd on the surface
A homogeneous CdTe layer without pores under the Te layer allows CdS
Since the bonding characteristics of the /CdTe bond are determined, the use of the CdTe layer 9 having this porous layer on the surface does not deteriorate the bonding characteristics; on the contrary, it brings about the effect of reducing the thickness of the effective CdTe layer, This reduces the series resistance of the element. An ohmic electrode 10 is formed by printing carbon onto the CdTe layer 9 and firing it.
この電極１ｏは印刷時にＣｄＴｅ層９の多孔質の表面層
へ入れ込み、実質上ＣｄＴｅ層との接触面積を増す働き
をする。一方ＣｄＳ膜８上にオーミック電極としてＡｇ
Ｉｎ電極１１を形成し太陽電池素子とする。This electrode 1o is inserted into the porous surface layer of the CdTe layer 9 during printing, and serves to substantially increase the contact area with the CdTe layer. On the other hand, Ag is used as an ohmic electrode on the CdS film 8.
An In electrode 11 is formed to form a solar cell element.
以上のように構成された太陽電池素子のＣｄＴｅ膜作製
条件と、ＣｄＴｅ膜中に形成された２つの１の厚みＤｌ
とＤ２との関係及びその素子の白色帯光灯２００ルック
ス下の最大出力を第１表に示す。Conditions for producing the CdTe film of the solar cell element configured as described above, and the thickness Dl of the two 1s formed in the CdTe film.
Table 1 shows the relationship between D2 and the maximum output of the element under 200 lux of white band light.
表に示す通り気孔の少ないＣｄＴｅ層の膜厚が０．５〜
６ｆｉｍであり、多孔質層の膜厚が２メｍ以上であると
き高い特性が得られた。As shown in the table, the thickness of the CdTe layer with few pores is 0.5~
6 fim, and high characteristics were obtained when the thickness of the porous layer was 2 mm or more.
発明の効果
以上のように本発明の光起電力素子は、ＣｄＴｅ膜を薄
い帯状で気孔の少ない膜部分と、多孔質膜部分とからな
ることにより、この多孔質層が実質的Ｃｄ Ｔｅ層を薄
くさせた効果を発揮し、ＣｄＳ／ＣｄＴｅヘテロ接合の
太陽電池の効率向上をもたらす。Effects of the Invention As described above, the photovoltaic device of the present invention consists of a thin band-shaped CdTe film with few pores and a porous film part, so that this porous layer substantially covers the CdTe layer. It exhibits the effect of thinning and improves the efficiency of CdS/CdTe heterojunction solar cells.
第１図は、本発明の実施例における光起電力素子の断面
図、第２図は従来の光起電力素子の断面図である。
７・・・・・・ガラス基板、８・・・・・・ＣｄＳ膜、
９・・・・・・ＣｄＴ ｅ膜、１０・・・・・・カーボ
ン膜、１１・・・・・・電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名７−
−−カ゛う２肪
１０−−一カ−Ｋｌ！
＋＋−−−（し丁４に
／−一一つ゛う又基不え
４−・−カーボンル麹FIG. 1 is a sectional view of a photovoltaic device according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional photovoltaic device. 7...Glass substrate, 8...CdS film,
9...CdTe film, 10...Carbon film, 11...Electrode. Name of agent: Patent attorney Toshio Nakao and 1 other person7-
--Ka-2 fat 10--1 Ka-Kl! ＋＋－－－（Shicho 4/－11 ゛Matamotofue 4－・－Carbon koji
Claims (6)
合物半導体からなる第１の層と、この第１の層と接した
薄い帯状で気孔の少ないＣｄＴｅもしくはＣｄ、Ｔｅを
含む化合物半導体からなる第２の層を有し、さらにこの
第２の層の上に多孔質なＣｄＴｅもしくは、Ｃｄ、Ｔｅ
を含む化合物半導体からなる第３の層を設けたことを特
徴とする光起電力素子。(1) A first layer made of CdS or a compound semiconductor containing Cd, S on a transparent substrate, and a thin band-shaped CdTe or compound semiconductor containing Cd, Te that is in contact with this first layer and has few pores. It has a second layer of porous CdTe or Cd, Te.
A photovoltaic device comprising a third layer made of a compound semiconductor containing.
ｄ、Ｔｅを含む化合物半導体からなる第２の層の膜厚が
０．５〜５μｍである特許請求の範囲第１項記載の光起
電力素子。(2) The thin strip-like CdTe or C with few pores
2. The photovoltaic device according to claim 1, wherein the second layer made of a compound semiconductor containing d and Te has a thickness of 0.5 to 5 μm.
化合物からなる第３の層の膜厚が２μｍ以上である特許
請求の範囲第１項記載の光起電力素子。(3) The photovoltaic device according to claim 1, wherein the third layer made of porous CdTe or a compound containing Cd and Te has a thickness of 2 μm or more.
合物半導体からなる第１の層を形成する工程と、この第
１の半導体層に接してＣｄＴｅもしくはＣｄ、Ｔｅを含
む化合物からなり薄い帯状で気孔の少ない第２の層と多
孔質な第３の層とを同時に形成する工程とを有する光起
電力素子の製造方法。(4) Forming a first layer made of CdS or a compound semiconductor containing Cd, S on a transparent substrate, and forming a thin strip made of CdTe or a compound containing Cd, Te in contact with this first semiconductor layer. A method for producing a photovoltaic device, comprising the step of simultaneously forming a second layer with few pores and a third porous layer.
時に形成する工程が、それぞれ薄膜をスクリーン印刷す
る工程と、焼結する工程とからなる特許請求の範囲第（
４）項記載の光起電力素子の製造方法。(5) The step of forming the first layer and the step of simultaneously forming the second and third layers each include a step of screen printing a thin film and a step of sintering.
4) The method for manufacturing a photovoltaic device according to item 4).
求の範囲第（４）項記載の光起電力素子の製造方法。(6) The method for manufacturing a photovoltaic device according to claim (4), wherein the first layer is a CdS-ZnS solid solution film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61239511A JPS6393170A (en) | 1986-10-08 | 1986-10-08 | Photovoltaic element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61239511A JPS6393170A (en) | 1986-10-08 | 1986-10-08 | Photovoltaic element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6393170A true JPS6393170A (en) | 1988-04-23 |
Family
ID=17045880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61239511A Pending JPS6393170A (en) | 1986-10-08 | 1986-10-08 | Photovoltaic element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6393170A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730379A (en) * | 1980-07-31 | 1982-02-18 | Agency Of Ind Science & Technol | Thin film solar battery |
-
1986
- 1986-10-08 JP JP61239511A patent/JPS6393170A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730379A (en) * | 1980-07-31 | 1982-02-18 | Agency Of Ind Science & Technol | Thin film solar battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013222762A (en) * | 2012-04-13 | 2013-10-28 | Sharp Corp | Compound semiconductor layer and manufacturing method of the same, and compound thin film solar cell and manufacturing method of the same |
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