JPS55102279A - Method of fabricating photovoltaic element - Google Patents

Method of fabricating photovoltaic element

Info

Publication number
JPS55102279A
JPS55102279A JP875079A JP875079A JPS55102279A JP S55102279 A JPS55102279 A JP S55102279A JP 875079 A JP875079 A JP 875079A JP 875079 A JP875079 A JP 875079A JP S55102279 A JPS55102279 A JP S55102279A
Authority
JP
Japan
Prior art keywords
film
paste
cdte
substrate
cds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP875079A
Other languages
Japanese (ja)
Other versions
JPS5633870B2 (en
Inventor
Nobuo Nakayama
Hitoshi Matsumoto
Akihiko Nakano
Seiji Ikegami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP875079A priority Critical patent/JPS55102279A/en
Publication of JPS55102279A publication Critical patent/JPS55102279A/en
Publication of JPS5633870B2 publication Critical patent/JPS5633870B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To readily obtain a photovoltaic element having high photoelectric conver sion rate by forming a photosensitive surface of an n-type CdS sintered film using a CdTe sintered film for a substrate, coating a carbon film on the opposite surface to the photosensitive surface, and diffusing the impurity within the film in the substrate.
CONSTITUTION: 6wt% of CdCl2 and suitable amount of propylene glycol are added to CdS powder to prepare a CdS paste. After this paste is screen printed on a glass substrate 1, the substrate is calcined in N2 atmosphere containing infinitesimal amount of O2 to form an n-type CdS sintered film 2 having excessive Cd as compared with its chemical equivalent ratio. Then, a CdTe paste obtained by adding CdCl2 and propylene glycol to CdTe powder is printed on the film 2, calcined in N2 atmosphere to form a CdTe sintered crystal 3. Then, an organic binder is added to graphite carbone powder containing Cu ion to become an accepter to form carbon paste. This paste is printed on the film 3, calcined in N2 atmosphere to diffuse Cu within the film 3 and to thus form a carbon electrode 4.
COPYRIGHT: (C)1980,JPO&Japio
JP875079A 1979-01-30 1979-01-30 Method of fabricating photovoltaic element Granted JPS55102279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP875079A JPS55102279A (en) 1979-01-30 1979-01-30 Method of fabricating photovoltaic element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP875079A JPS55102279A (en) 1979-01-30 1979-01-30 Method of fabricating photovoltaic element

Publications (2)

Publication Number Publication Date
JPS55102279A true JPS55102279A (en) 1980-08-05
JPS5633870B2 JPS5633870B2 (en) 1981-08-06

Family

ID=11701598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP875079A Granted JPS55102279A (en) 1979-01-30 1979-01-30 Method of fabricating photovoltaic element

Country Status (1)

Country Link
JP (1) JPS55102279A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115567A (en) * 1982-12-22 1984-07-04 Agency Of Ind Science & Technol Manufacture of photovoltaic element
JPS59115568A (en) * 1982-12-22 1984-07-04 Agency Of Ind Science & Technol Manufacture of solar battery
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US5472910A (en) * 1991-11-07 1995-12-05 Bp Solar Limited Process for making OHMIC contacts and photovoltaic cell with ohmic contact
US5636437A (en) * 1995-05-12 1997-06-10 Regents Of The University Of California Fabricating solid carbon porous electrodes from powders
CN1295765C (en) * 2004-03-04 2007-01-17 上海交通大学 Photovoltaic semiconductor thin film plating liquid and its preparation method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59115567A (en) * 1982-12-22 1984-07-04 Agency Of Ind Science & Technol Manufacture of photovoltaic element
JPS59115568A (en) * 1982-12-22 1984-07-04 Agency Of Ind Science & Technol Manufacture of solar battery
JPS6357951B2 (en) * 1982-12-22 1988-11-14 Kogyo Gijutsuin
US4650921A (en) * 1985-10-24 1987-03-17 Atlantic Richfield Company Thin film cadmium telluride solar cell
US4909857A (en) * 1986-05-06 1990-03-20 Standard Oil Company Electrodeposited doped II-VI semiconductor films and devices incorporating such films
US5472910A (en) * 1991-11-07 1995-12-05 Bp Solar Limited Process for making OHMIC contacts and photovoltaic cell with ohmic contact
US5636437A (en) * 1995-05-12 1997-06-10 Regents Of The University Of California Fabricating solid carbon porous electrodes from powders
CN1295765C (en) * 2004-03-04 2007-01-17 上海交通大学 Photovoltaic semiconductor thin film plating liquid and its preparation method

Also Published As

Publication number Publication date
JPS5633870B2 (en) 1981-08-06

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