JPS59193075A - Manufacture of photoelectric conversion semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the generation of leakage in the junction part due to the remaining of the metal which constitutes an electrode by removing also a non single crystal semiconductor layer provided under the electrode, when the electrode on a non single crystal semiconductor is split by providing an open groove in every element. CONSTITUTION:A photo transmitting conductive film is formed over the entire upper surface of a photo transmitting insulation substrate 1 and irradiated with a laser light, thus forming the first open groove 13, and then first electrode 2 is formed in each region 31 and 11 between elements. Next, the non single crystal semiconductor layer 3 is formed thereon. Then, the second open groove 18 is formed by the irradiation with a laser light, thus exposing the side surfaces 8, 9 of the electrode 2. The second electrode 4 and a connector 30 are formed thereon. The third open groove 20 is formed in the region 31 with a laser light. In this case, not only the electrode 4 is removed, but the layer 3 thereunder is removed, resulting in the exposure of a part of the electrode 2, thereby preventing the generation of leakage in the junction part due to the remaining of a part of the electrode 4. Thus, the titled device wherein a plurality of the elements 31 and 11 are directly connected at the joint can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a non-single-crystal semiconductor including an amorphous semiconductor having at least one junction that generates a photovoltaic force upon irradiation with light, on a translucent scarlet substrate. A device in which multiple photoelectric conversion elements (also simply called elements) are electrically connected in series.
The present invention relates to a method for manufacturing a photoelectric conversion device capable of generating high voltage.

This invention uses a laser scribing method (hereinafter referred to as LS), which is a maskless process, in order to reduce the area required for connecting multiple elements to 1/10-1/100 of the conventional mask alignment method. It is characterized by

The arrangement, size, and shape of the elements in the device of the present invention are determined by design specifications.

However, in order to simplify the content of the present invention, in the following detailed description, the first electrode on the lower side (substrate side) of the first element and the second electrode of the second element disposed on the right side thereof will be described. electrode (
The description is based on the pattern when electrically connected in series on the semiconductor (that is, on the side away from the substrate).

In the present invention, when dividing the second electrode on a non-single crystal semiconductor by providing a third trench for each element using LS, not only this electrode but also the non-m crystal semiconductor Ji provided below the second electrode is divided. By removing a small portion of the first electrode and exposing a small portion of the first electrode, the metal portion of the second electrode is abnormally diffused into the semiconductor due to LS and remains, thereby preventing the junction of semiconductors, especially PIN. This is intended to prevent deterioration of the bonding characteristics at the interface and, by extension, a decrease in the manufacturing yield of LS.

In the present invention, instead of forming the second electrode with metal in close contact with the non-single crystal semiconductor, a conductive oxide film is provided, and a reflective metal is further formed in a 21-structure on this crotch. , during LS, to light da j1. 1, Su & i7. l;
or prevent abnormal diffusion into semiconductors.
A feature of this method is that even if some of the metal diffuses, it is instantly removed, including the semiconductor particles.

The present invention is further characterized in that when the third groove for forming the second electrode 4Qa is fabricated by LS, the leakage current between the electrodes is reduced to less than IOA/cm. It is said that

In the present invention, when integrating a plurality of elements on the same substrate,
In order to facilitate the division between the elements of the second electrode and to complete the division (isolation) with the divided region (third open groove), the The Bj characteristic is that it has been optimized not only to improve the characteristics as an electrode for cars, but also to improve productivity and yield even when integrated into composites. .

This invention is a maskless process using the LS force method.
In this manufacturing process, the open grooves formed in the previous process are
The image is enlarged up to 300 times and displayed on a television screen, etc., and the monitored opening groove is addressed into a microcomputer.

Furthermore, using this input information as a reference, the position of the open groove created by this -1- degree is defined by combining the amount of lift from there and the information stored in the memory.

Then, a laser beam for LS, for example, a YAG laser having a wavelength of 1.09 mm (focal length 40 mm, laser beam diameter 2 zo) is irradiated onto this defined position.

Further, it is moved at a speed of 05 to 10 m/min, for example, 5 m/min, to create an open groove in a dependent relationship with the previous step.

By combining the LS with a microcomputer, it is possible to produce grooves in the next step with high precision, with an error of less than 15% compared to the desired value, but experimentally less than 5%.

That is, the LS of the present invention has another feature that it is an ultra-high precision method that can perform a substantially computer-controlled self-line method.

For this reason, the conventional mask fitting method inevitably causes mask misalignment, warping, and part of the fitting 4'ii1. Dl tkosj-(-) All production 7 I+ such as decrease in production yield, etc.
'l'IIQ indicates that the causes of yield reduction were not eliminated all at once.

However, in these conventional inventions, although the longitudinal cross-sectional view is not shown in FIG. there was.

For example, when a metal mask is used, in a method of directly selectively producing a conductive layer or a semiconductor layer, the mask giving this selectivity is
There are cases where it gets lost.

In addition, the mask L is contaminated due to the formation of fracture components (a), and the peripheral edge of the coating formed on the mask is clear (disappeared, VA coalescence occurs, and the electrodes are exposed). It has many drawbacks, such as the generation of crosstalk (leakage current) between the two.

The present invention is a maskless process that does not use any masks in place of the conventional mask alignment process, and is extremely simple and highly accurate, resulting in a reduction in manufacturing costs of the equipment, and therefore costs less than 500 yen/ The purpose of the present invention is to provide an extremely innovative photoelectric conversion device that can now be manufactured using W, and by expanding its manufacturing scale, it has become possible to sell for 100 to 200 yen/W.

Hereinafter, structures of a conventional example and the present invention will be described according to the drawings.

FIG. 1 is a group of longitudinal sectional views showing the manufacturing process of a photoelectric conversion device of the present invention using a conventionally known mask alignment method.

In the drawing, the transparent group Mf! , (e.g. glass plate) (1
) A transparent conductive film (abbreviated as CTF) constituting the first electrode is selectively formed on the first mask by seven steps.

Furthermore, semiconductor 1m(3) is selectively formed in the same manner by using a second mask.

Furthermore, the second electrode (4) is formed by a third mask alignment process.
is provided.

In FIG. 1, a semiconductor layer (3) covers one side surface (16) of the CTF, and a semiconductor layer (3) covers one side surface (16) of the CTF at the connection portion. Since the semiconductor IW (3) does not cover the surface (14) of the CTF, a gap of 1 to 5111111 + UI 3 jnm is required between the CTFs (J3).

Furthermore, the first electrode (37) and the second electrode (38) are (1
4) Electrically connected on the surface of the first and second parts:! :
The second electrode of (39) is ζ light 41Jru1 from the mask 0 month
1 to 5 because it is not necessary to spread out or spread.
For example, a gap (6) of 3 mm is required.

In particular, this second electrode (39) is connected to the first electrode 447 (37
) to prevent short circuit with L.
The degree of bonding on the semiconductor surface (28) is extremely important for manufacturing yield, and as a result, the coupling rζ1iN2
) has become wider.

In addition, the first '8i pole (37) and the second 71ii suspension (
:1r)) should leak through the semiconductor surface (28) J'
< , (Iru・Q・1) This resulted in a decrease of 1.

The present invention provides the first 71i+'M (37
) and the second electrode (39), and cover the surface of the semiconductor between the first and second electrodes (39) with a panosolysis film, and By setting the distance (defined in this specification as the distance between
It was excellent in terms of manufacturing yield. In addition, particularly in the present invention, in order to prevent the distance between the second electrodes of the first and second elements from becoming metal or mibrate, the second electrode and the semiconductor layer thereunder are completely removed. This prevents the metal constituting the second electrode from remaining and causing leakage at the joint, and also makes it easier to carry out LS. This completes the response process.

The present invention meets this objective.

In the conventional example, the gap between the connecting parts is set to 3 mm, for example, 15 mm (20 cm) in the 20 cm x 60 cm.
If you try to make a 5mm element end (X 15mm), there will be 33 stages of connections, and the total connection area will be 10cm.
(area of 200 cm'), and as a result, the effective area remained at 75% considering the peripheral area.

In the present invention, by reducing the thickness of the multilayer layer in such a process, the self-area can be increased to 86 to 97%, for example, 92%, and in addition, the thickness can be changed to CO, and the depth can be further increased.

By increasing the manufacturing yield by 60% compared to conventional
The objective is to provide an epoch-making photoelectric conversion device that can increase the T-R to 87%.

The revision iI++ of the present invention is shown below according to the drawings.

FIG. 2 is a longitudinal sectional view showing the manufacturing process of the present invention.

In the drawings, a translucent substrate (1), for example, a glass plate (for example, thickness 0.6 to 2.2 mm, e.g. 1,211 m, IM size (left and right direction in the drawings) 60 cm, "1120 cm") was used.

In addition, the upper 6 surfaces are completely light-filled, v! '1
．． ii For example, ITO (M-formed insium soot oxide mixture, that is, tin oxide in indium oxide) (500-1500 people) +5nOL
(200-40OA) or a transparent conductive film (15
00 to 2000 Å) by vacuum evaporation method, LPCv1] method, plasma Cv1) method, FCVD method, or spray method.

After this, an output of 0.3 to 3 W (focal length 40 mm) is applied from the bottom or top of the substrate using YAG laser processing 1a (manufactured by Rohon Laser), and
Typically, the 397A is controlled by a microcomputer.
Then, a laser beam is irradiated from the output, and the first groove (13) for the short fly line is formed by scanning, and the first electrode is placed in each inter-element region (31), (11). (2) was produced.

The first opening a (13) formed by LS has a width of about 30 mm.
A length of 20 cm and a depth of each of the first electrodes were completely cut/separated.

For this reason, as is clear from the drawing, a portion of the substrate (1) is hollowed out at a depth of 300 to 1300A, and four parts (6
0)).

The width of the area constituting the first element (31) and the second element (11) is 5 to 40 mm, for example 1.5 m.
It was set as m.

Using the LS method described above, the transparent conductive film (CTF) (2) constituting the first electrode was cut and separated to form the first groove.

After this, plasma cvr+ on this top surface? 7;, Fumet CV
I) PN or PIN by method or LPCVD method
The lj joint was naturally formed to a thickness of 0.57.

A typical example! , t )) Q: 144 bodies (SixC1
-x ), a non-single crystal semiconductor with one PIN junction, 11 or 1) type semiconductor (
SixC) -1 type, N type, ■] type Si''I' foundation body -■
A tandenoid with two PTNfp junctions and one I'll junction made of type 5JxGeIJ conductor-N type S1 semiconductor.
Type PINFIN, , III junction semiconductor (3
).

Such a non-single crystal semiconductor (3) was formed to have a uniform thickness over the entire surface.

Furthermore, as shown in FIG. 2 (13), the first opening m
A second open groove (18) was formed over the left side (first element side) of (13) with a length of about the length of the second LS.

In this drawing, the first and second open grooves (13) (18
) are shifted by 20 to 30 degrees, for example, by 59 degrees.

The laser beam irradiation could be performed either from below the glass (1) or from above the substrate.

The second open groove (18) thus forms a side surface (8) of the first electrode.
, (9) were exposed.

The side surface (9) of this second open groove is to the left (!11, 10 to 1
The first electrode example was made to have a low temperature. It is characterized in that it is provided over the first electrode position of the first element.

As a typical example, the wire may enter the inside (9) of the first electrode (37) as shown in FIG. 2(B).

Further, in the present invention, as shown in the conventional example, only the surface (14) of the first @ pole (see Fig. 1) may be exposed. 2W was a little too strong, and the entire depth direction of this CTF (37) was removed by 1, and as a result, the side surface (8
), even if the connector with the second electrode (38) is brought into close contact with the second electrode (38) in FIG. In other words, manufacturing-1
It is extremely important to be able to provide a margin of

In FIG. 2, there is a second ? on the back side, as shown in FIG. 7, and a third 1. Cut at S...
ji7k the third open groove (20) for i separation.

For this second electrode (4), a conductive oxide film (Co) (45), which is particularly used in the present invention, was used. Its thickness is 50-15
It was formed to a thickness of 0.00A.

As this CO, ITO (a mixture whose main component is 1!tJ incininium tin oxide) (45) was formed here. This CO could be formed by intervening as a main component of indium oxide. As a result, (45) (45') were self-disconnected in close contact with the semiconductor. Furthermore, the upper surface is made of reflective metal (RM) (4(i), a metal whose main component is silver or aluminum. % doped aluminum was formed to a thickness of 300 to 3000.

This combination of CO and cabinet is also effective for promoting the reflection of long wavelength light on the back side and effectively photoelectrically converting long wavelength light of 600 to 800 nm.

Furthermore, this l? By forming nickel on MJ2, it is possible to improve the adhesion between the electrode portion (5) and the external lead electrode (23).

These include electron beam evaporation: 4 method or PCVD method, Tsume 1-CVD method, and CVD method including fumet plasma CVD method.
350'C to avoid deteriorating the semiconductor j- using the method
Formed at the following temperatures:

Particularly in LSO, the present invention provides a third open groove across the first element region (31), and the distance between the electrodes (39) and (38) where the open circuit voltage of the first element is generated is set to 20% of the laser diameter. ~599 Typically, it is about 3? In addition, the "crossing depth", which is the distance between the centers of the first open groove and the third open groove, is 20 to 40? Furthermore, it is characterized by having two or more large second open grooves. That is, the center of 1111+X+7 (20) of No. 1st
It is provided over the element side.

As mentioned in 1iii, the depth of this crossing is recorded in the memory of the 21 computer by means of an optical monitor and the first opening groove from the monitor shim.
Each time a third open groove is produced by LS, a high-precision computer:Z control is performed, and each time -I Nilfregistration is performed.

Furthermore, the depth of this third groove is increased by 1.
It is not necessary to remove ftt< by 1, but to remove half of that part (
By removing A-1- and exposing part of the first electrode, due to the variation in the LS irradiation intensity (P/N density) when forming the open groove, This prevents a portion of the second electrode from remaining and making it impossible to electrically separate the two elements. Especially the intensity of this laser light! ,S-
(scansbee-1 starts scanning, ends 11h)
As a result, the steady speed is slow compared to 1.
It will be irradiated with strong power. In such a region, when removing the second electrode, it is inevitable that the semiconductor layer on the -1 side of the second electrode would also be removed. Of course, if the first electrode is removed at this time, series connection will not be possible, so this is clearly prohibited. Furthermore, even if some parts of the semiconductor remain in areas where the scan speed is high (areas with low power density), the leakage rate is 10 (A/cm).
) In the following, the major feature was that it did not pose any practical problems.

This shows the case where the second electrode is cut and separated by irradiating laser light from the upper blade to form an open groove (20).

This laser light carved out and removed the semiconductor, especially the non-single crystal semiconductor that was in close contact with the lower surface of the second electrode, and reached the first electrode therebelow. For this reason, if the first electrode is made of heat-resistant tin oxide as its main component, since both are translucent,
The semiconductor, which easily absorbs the thermal energy of the laser beam, was removed together with the second electrode material, leaving the first electrode, to form a third groove. This leads to the biggest drawback of LS, the output (power density W/(learning1lill ia
This was done by essentially eliminating the disadvantage of L, which makes it difficult to perform l+.

Especially this semiconductor (3) or 1] 41 Geo exclusive 1ri (4
2, ■ type semiconductor 1-(43), N type semiconductor Iff
(44) For example, there is one I)IN junction, and this F'2ρ body layer has a microcrystalline or polycrystalline structure, so-called electrical conductivity is 1 to 200 (Acm
) and high conductivity, one of these semiconductors Jg at the same time.

It is possible to completely eliminate the possibility that metal atoms remain in the body without forming the element Y, and in addition, it is possible to completely eliminate the possibility that metal atoms remain in the body. It was extremely difficult to completely prevent the desorption of silicon (34) by infrared photothermal oxidation in order to achieve high reliability.

Furthermore, regarding semi-defective devices (5 to 10% of the total) with a leakage rate of 10 to 10Δ/cm in terms of manufacturing yield, 2.
After this, 1 part hydrofluoric acid and 3 parts nitric acid. # Add 5 acid to water G and add 5 to 10
It was effective in reducing leakage to chemically reduce the silicon in the open grooves to 500 to 2000 by diluting the silicon layer twice and lightly esotinking only the surface area, and to remove metal impurities in the pores.

Thus, as shown in FIG. 2(C), a plurality of elements (
31) We were able to create a photoelectric conversion device that directly connects (11) at the connecting part.

FIG. 2(D) shows an attempt to further complete the present invention as a photoelectric conversion device. That is, 500% of the silicon nitride film (21) was deposited using a plasma vapor phase method as a film.
It is formed uniformly to a thickness of ~2,000 mm, further preventing leakage current between each element from occurring due to adsorption of moisture, etc.

Furthermore, an external lead-out terminal (23) was provided at the peripheral portion (5).

These were filled with an in-house resin (22) such as polyimide, polyamide, Kapton or epoxy.

In this way, the irradiation light (10) is applied to each element on a substrate (60 cm by 20 cm) as in this example.
It is installed on a strip of 5 mm x 192 mm, and further has 40 stages within 580 mm K 192 mm due to rll 150 of the connecting part, 10 mm inside of the external extraction electrode part, and 4 + nm of the peripheral part, and has an effective area (192 m + n x 14.3
5mm, 40 steps, 1102cmLIll, 8%) was obtained.

As a result, segment I was 10.8% (1, [)5q1n
), the panel has a conversion efficiency of 6.8% (theoretically it is 9.7%, but due to the 40-stage tooth row connection, the effective upstream conversion efficiency has decreased) (8Ml (]O
OmW/cm')), it was possible to achieve an output power of 73.8W.

Furthermore, when this panel is left at a high temperature for 1500 hours, the percentage decreases to less than 10% after 1000 hours, for example, when the number of panels is 20.
At worst, the output image was 4% at 1 da, and the output image of -1.7% could not be seen.

This is due to the fact that when we used the conventional mass-scattering method to perform the Shinto Old No. 1 under the same conditions, 17 defective panels were generated in 10 hours.Z) t: , which was an amazing value.

FIG. 3 is a vertical cross-sectional view and a plan view (end) showing the most typical positional relationship of each opening to create an opening groove in three LSI cycles.

The numbers and steps are the same as in FIG.

FIG. 3(A) shows the first open groove (13) and the first element (31).
), a second element (11-), and a connecting portion (12).

As is clear from the drawing, the first groove (13) is located on the substrate (
I) is slightly hollowed out.

Furthermore, the second opening m (30) is provided across the first electrode (2) side of the semiconductor (3) that should constitute the first element (3), and also removes the semiconductor (3), The first electrode below it remains.

Therefore, the first electrode (37) of this first element (31)
) and the second electrode of the second element (11) are connected to the connecting portion (12
) at the top surface (8) of the first electrode (2) by means of a CO connector (30) extending from this second electrode (38).
The two elements are connected in series.

Further in the drawing, a semiconductor (3) with at least one PN or I'IN junction, here one 5ixC1
((0<x<1) A semiconductor having one PIN junction consisting of P-type-I-type S1-microcrystallized N-type Si (44) is provided.

This third open groove (20) is shifted to the first element (31) side to a depth of about 207 mm.

For this reason, the "A" end 6,1, :I of the third open groove (20)
It is provided by hollowing out a part of the connector part (30).

Thus, the first and second elements 1'-(31) (Ii
) of each of the second electrodes (4) by electrically cutting portion l'
lit, and the leakage between the electrodes is also 4oΔ/l:m
(meaning the order of IOA per Icrnrlj).

Manufactured based on this value of 10A/cm! When evaluating L retention, II
As a result, we were able to achieve high productivity.

Figure 3 (B) shows the flat view, M+: i part (
(lower side in the drawing) No. 1 No. 2133 open groove (13)
, (18), (20) have been established.

Would you like to reduce the leakage in this direction? 1
The first conductor (3) covers the first electrode (2).
It is characterized by a U loop that reduces short circuits between the second electrodes.

In addition, at the end of the element, the first electrode (2), the semiconductor, and the second electrode (4) were scribed (50) at the same time by LS.

In this drawing, the first, second, and third open grooves +1 are 60
~20 mm, with 450 ~ 8074 typically 12 mm in the connecting portion.

The output of the YAG laser is 0.4
(2(p') ~ 4W (7shi) is used, or the spot diameter is further reduced based on the technical concept,
Furthermore, by setting the focal length to 50 mm or more at the longest, the area required for this connection can be reduced, and the effective area (effective efficiency) of the photoelectric conversion device can be further increased. have.

FIG. 4 is an enlarged view of the externally drawn electrodes ij when a small photoelectric conversion device 6' is mass-produced at the same time instead of a large panel for a calculator or the like.

The fourth nut 1 (Δ) corresponds to FIG. ) is connected to the second electrode (upper electrode) (4).

At this time, the pressure on the electrode (47) is very strong.
(49) pokes the semiconductor (3) below it (10th
' City] An open groove (13) is provided so that even when 9 meters (2) and the show are combined, (49) and (2) are not 1...11-L. 5 degrees and the outer part is The first electrode, the semiconductor, the second [
2) i-, i:i 1. ``Iλ was scribed at the same time with one force LS 7:l (!'I (1) cut 1I
It has been 1 liter for 1 minute.

Furthermore, FIG. 4(B) shows another pano +=' (48) or the second electrode +4 connected to the lower first electrode (2).
l! It is connected and installed at (30).

Furthermore, the pano l" (48) has conductive r horns, electrodes (4
G) and is electrically connected to the outside.

Again, in the open groove (30) (20) (50), j
, Ripano 1) 2 (48) is completely electrically isolated from the adjacent photoelectric conversion device) 1t, and after the Karasuri J141i between this device,
By making separate cuts 11 and 11i in the culm, it is possible to install a large number of light conversion devices in one pile without using a mask for ζ'i.
& whiten the signs.

For example, a panel of 20cm x 60cm is 6cmA1.
If we try to make a 5cm photoelectric conversion device (for η bar 1), we can see that 130 solar cells for calculators can be made at one time.

In other words, the photoelectric conversion device is covered with organic resin molding F' (22) except for the electrode parts (5) and (45), and if a small power solar cell is to be made after this, it can be cut with a glass cutter.

Furthermore, it is possible to package this panel by combining three or four panels in series, for example, 40 cm x 740 cm or (iocm x 20 cm) in an aluminum frame, to provide a high power panel of 120 cm % 40 cm 2 according to the NIEDO standard. .

In addition, this N+:OO standard panel is made by laminating a fluorine-based protective film on the reflective surface side (upper side in the drawing) of the photoelectric conversion device of the present invention using Schiefle and glue to increase mechanical strength against wind pressure, rain, etc. It is also effective to aim for this.

In the present invention, the substrate is made of glass, especially the back side of the transparent insulating substrate.

However, this substrate can be used as a flexible organic resin or an organic resin.
This is true because a composite substrate made of silicon nitride or silicon nitride is used to form a valve with a thickness of O, l·=-〇.

In particular, silicon oxide or silicon nitride damages this 11/+i correction to create a mixture of the substrate and CTF. The so-called Flo, King 9J), which prevents this from happening, was in a state of erectile dysfunction.

Further, the present invention will be described below with examples and if'n.
Completed 1l11.

Embodiment 1 This embodiment was prepared according to the drawings of 2nd [Mr. 'Length 1.1mm, JK height 60cm, llJ 20c
+n was used.

Apply silicon oxide 11A to 111I of 01 on this soil surface (・
], professional) King layer.

Furthermore, add CTF on top of that IT 01600 A +sn
O, NijiooA was cropped using the photo plasma C1, ID method.

Furthermore, after this, the first open groove is connected to Subono IM407', and the output IW YAG laser is connected to Microphone! The scanning speed was 1 to 5 m/min (average 3 m/min) and controlled by the Ambino and Yu.

The element area (31) (II) was 15 mm 1 lJ.

After this, the known pcvo method, four-CVD method or four-λ
1. P shown in FIG. 2 by plasma CVl)t
A non-single crystal semiconductor having one (42)1 (43) N (44) junction was fabricated.

Its total thickness was about 0.53A.

After this, the first open groove was monitored on the TV and the L
A second opening a (18) was prepared by oxidizing the surface of the opening groove with S.

Further, ITO, which is CO, was formed on the entire structure to have an average thickness of 1050Δ by photo-plasma CVD method, thereby forming the second electrode (45) and connector (30).

In addition, aluminum to which 0.5% by weight of silicon was added was similarly formed to a thickness of 1000 A by electron beam evaporation to form an RM.

Furthermore, the third open groove (20) is similarly placed in an oxidizing atmosphere.
The second open groove (18) is formed by knotting on the first element (31) side at the depth of the second open groove (18).
Figure 2 (C) was obtained.

The third opening at this time? The depth of +'lj is as shown in the drawing, and its bottom is on the surface of the first electrode, as shown in the figure.
, -J Tenoko.

For this reason, C, 0, RM and ''Guidebook+=r' were 14:00% dead money.

The output of the laser beam was IW, and the other conditions were the same as those for the second open groove made of bamboo.

In this way, FIG. 2(C) was produced.

After the process shown in Figure 2 (C), connect the ends 7HB of PA' and / to the first 7H poles with a laser light output of a little less than 1, the conductor to A, and the second conductor to all from the glass end. 4n+m (scan regularly in a force shape to prevent electrical short circuit with the panel frame).

This f&, Banoshiheinyo IIQ (2i > I
A silicon nitride aggregate was fabricated to a thickness of +oooX at a temperature of 250'C by ICv11L or Fume FCvD method.

As a result, it was possible to create 110 stages of 15 mm elements on a 20 cm x 60 cm panel.

The effective efficiency of the panel is 8Ml (100InW
/cm'), I was able to achieve a power output of 6.8% and a cuff output of 4.3W (4).

The effective area is 1102c+H, and the total area of the panel is 91.
We were able to make effective use of 8%.

Example 2 As a substrate glass, thickness 1.1 mm and size 20 cm W
60 cm was used. Furthermore, a plurality of photoelectric conversion devices for calculators each having a size of 5 cm and a width of 1.5 cm were fabricated on the same substrate. Here, the element shape was a 5-stage continuous array of 9 mm x 13 mm.

First electrode striped ITO (400λ) +5nOt (20
OA), the second electrode of a non-single crystal semiconductor with a PIN junction was made as ITO (300A) + metal (500A). The rest is the same as in Example 1.

The connecting part is 10p, and the external electrode is shown in Fig. 4 (A) (B).
It was set up as a W# structure.

As a result, he was able to make 160 calculator devices at once.

Tests were conducted with a fluorescent knife 200Ix with an effective conversion efficiency of 4.5%.

As a result, a final manufacturing yield of 83% could be obtained.

In the conventional method, this cost only 40 to 50 kilos from the stomach.
! Considering that the effective conversion efficiency could only be obtained up to 3.2% due to the required area of the connecting portion, this was extremely significant.

The rest is the same as in Example 1.

Example 3 This example is Example 2, and the substrate was made of Boliimi I resin, which is a translucent organic resin and has a thickness of one layer.

Furthermore, as a blocking layer, silicon oxide of 0.2274 was made at a temperature of 250'C by the reaction of silane and carbonate scum by plasma vapor phase method, and this self-produced resin was
In order to prevent damage from S, a blocking layer was used.

The rest is the same as in Example 2.

In this method, it was possible to reduce the cost of the substrate (which was 30 yen in Example 2) to 2 yen/'l for the vehicle element.

In addition, since each calculator element can be separated from Sea 1 by cutting or using scissors, it is extremely easy to work with and is easy to use.

Furthermore, when cutting from this sea 1-, automatic cutting is possible using LS using strong pulsed light of 10 to 15 W).

In this embodiment, as shown in FIG. 2(I)), the photoelectric conversion device is sandwiched between the organic 4R4 resin sheets 1- by overlapping the protective organic resin (22) on the north side. It has flexibility and can be mass-produced at an extremely low cost.

The yield in this example was 72% of the 160 pieces produced, with a J conversion efficiency of 4.5% as the lower limit.

In FIGS. 2 to 4, light was incident from the lower translucent insulating substrate.

However, the present invention does not limit the light incident side to the lower side.

In addition, in the present invention, I''IN junctions are stacked from the substrate side.However, conversely, NIP junctions are formed from the substrate side,
This l)-type semiconductor has a SnO coefficient of 50 to 1,500.

RM of 300 to 3000 on the L side.
It may be formed to have a thickness of A.

In the detailed explanation of H'F above, ■ Light from the side! ! 4
44, 7 is written based on the photoelectric conversion device when performing 1.

However, the insulating substrate is non-light-transmitting, and the light of a laminated structure where Y light is irradiated? Ja transformation: 1ζ:yo award)
-C is also effective in the present invention. In such a case, the first electrode is in close contact with the insulating substrate.
', a reflective 4j1' metal whose main component is tIJ, and a transparent conductive film of 500 A is provided first') 't: 4 J)'y4 and 7. A transparent conductive layer ++X may be formed as a second electrode on a non-single crystal semiconductor.

[Brief explanation of drawings]

Figure 1 is a side view of a conventional photoelectric conversion device.
3). FIG. 2 is a longitudinal cross-sectional view showing the manufacturing process of the photoelectric conversion device of the present invention. FIG. 3 shows the photoelectric conversion device 0) l+i(1lJi
1lii 121-CJ). FIG. 4 shows another photoelectric conversion device of the present invention: i! 1:41: This is a vertical cross-sectional view of the Tsumu people. Patent applicant 3 horns 2 // h?ぢtme37 12 1+ (A) CB)
(A)
(Bunsho 4 (2)

Claims (1)

[Claims] 1. A first electrode of a conductive film on an insulating substrate, a non-single crystal semiconductor that can generate a photovoltaic force when irradiated with light closely on the electrode, and a second electrode closely on the semiconductor. In the method for manufacturing a photoelectric conversion device in which a plurality of photoelectric conversion elements having a plurality of photoelectric conversion elements are electrically connected to each other in series and disposed on the insulating substrate, a first conductive film on the insulating substrate is irradiated with a laser beam. forming a first groove and dividing the conductive film into a plurality of predetermined shapes to form a first electrode; and forming the non-single crystal semiconductor in the first electrode and the groove. a step of irradiating the semiconductor with a laser beam to form a second groove; and a step of forming a second groove on the semiconductor and the second groove.
a step of forming a conductive film, step 1& of the step, and a third step of irradiating the conductive film with a laser beam to remove at least a portion of the second conductive film and the semiconductor under the conductive film. 2. Method 2 for manufacturing a photoelectric conversion semiconductor device 15, which comprises the step of forming the second electrode each time the first conductive film is exposed. The opening Iη is 20 to 4094 compared to the first opening groove.
1. A method for manufacturing a photoelectric conversion semiconductor device, characterized in that the device is formed with a spanning depth.