JPH0494174A - Compound thin film solar cell and its production - Google Patents
Compound thin film solar cell and its productionInfo
- Publication number
- JPH0494174A JPH0494174A JP2211950A JP21195090A JPH0494174A JP H0494174 A JPH0494174 A JP H0494174A JP 2211950 A JP2211950 A JP 2211950A JP 21195090 A JP21195090 A JP 21195090A JP H0494174 A JPH0494174 A JP H0494174A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- compound thin
- compound
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000010408 film Substances 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 7
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 8
- -1 chalcopyrite compound Chemical class 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 3
- 238000003475 lamination Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 11
- 239000011521 glass Substances 0.000 abstract description 6
- 238000004544 sputter deposition Methods 0.000 abstract description 6
- 230000001678 irradiating effect Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical class [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003337 fertilizer Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はカルコパイライト系化合物を活性層とする薄膜
半導体を用いた太陽電池のユニットセルを直列接続して
なる化合物薄膜太陽電池およびその製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a compound thin film solar cell formed by connecting in series unit cells of a solar cell using a thin film semiconductor having a chalcopyrite compound as an active layer, and a method for manufacturing the same. Regarding.
カルコパイライト系化合物のＣｕ Ｉｎｋｓ ！は、そ
の禁制帯幅が約１ｅＶであって、直接遷移形の帯構造を
持ち、ｐおよびｎの両型の導電型を示す。また禁制帯幅
２．４ｅＶのＣｄＳとは格子の不整合も１％程度であり
、したがって窓層のｎ型ＣｄＳとｐ型Ｃｕ１ｎＳｅ。Cu Inks of chalcopyrite compounds! has a forbidden band width of about 1 eV, has a direct transition type band structure, and exhibits both p and n conductivity types. Furthermore, the lattice mismatch with CdS, which has a forbidden band width of 2.4 eV, is about 1%, so the n-type CdS and p-type Cu1nSe of the window layer.
のヘテロ接合で高効率太陽電池を構成することが期待で
きることから、近年その研究、開発が盛んに進められて
いる。このような化合物薄膜太陽電池から発電した電力
を効率良く取り出すためには、非晶質Ｓｉ太陽電池にお
いても行われているように、例えば第２図に示すように
ユニットセルが直列接続されるような構造にするのが一
般的である。この構造は、ガラス、アルミナなどの絶縁
性基板１上にオーム性接触用の金属電極２１，２２．２
３・・・を−列に並んだ複数の短冊状に形成し、その上
に光起電力発生層であるｐ型ＣｕＩｎＳｅｚ層３１．３
２．３３−ｎ型ＣｄＳ層４１．４２．４３−・・ならび
にＺｎＯやＩＴＯなどからなる透明電極５１．５２．５
３・・・を順に積層する。そして、例えば金１ｉｔ極２
２の縁部近くにおいてＣｕｌｎＳｅｚ層３Ｌ３２および
ｎ型Ｃｄ５層４１．４２の間隙を満たす透明１Ｅｔｉ５
１の縁部が接触するようにして、一つのユニ・ノドセル
の金属電極が隣接するユニットセルの透明電極とが接続
される構造となるように画電極およびＣｕｌｎＳｅｉ層
、ＣｄＳ層のパターンを構成することにより各ユニット
セルを直列接続する。Since it is expected that high-efficiency solar cells can be constructed using heterojunctions, research and development have been actively conducted in recent years. In order to efficiently extract the power generated from such compound thin-film solar cells, unit cells should be connected in series, as shown in Figure 2, as is also done in amorphous Si solar cells. It is common to have a similar structure. This structure has metal electrodes 21, 22, 2 for ohmic contact on an insulating substrate 1 made of glass, alumina, etc.
3... are formed into a plurality of strips arranged in - rows, and a p-type CuInSez layer 31.3 serving as a photovoltaic generation layer is formed thereon.
2.33-n-type CdS layer 41.42.43-... and transparent electrode 51.52.5 made of ZnO, ITO, etc.
3... are laminated in order. For example, gold 1it pole 2
Transparent 1Eti5 filling the gap between CulnSez layer 3L32 and n-type Cd5 layer 41.42 near the edges of 2
The pattern of the picture electrode, the CulnSei layer, and the CdS layer is configured so that the metal electrode of one uni-node cell is connected to the transparent electrode of the adjacent unit cell so that the edges of the two cells are in contact with each other. This connects each unit cell in series.
一般に、このような直列接続型化合物薄膜太陽電池の形
成は、金属電極層の形成、金ｘｉｓのバターニング、
ＣｕｌｎＳｅｉ層の形成、 ＣｄＳ層の形成Ｃｕ１ｎＳ
ｅｔ層とＣｄＳ層のパターニング、透明電極の形成、透
明電極のパターニングの！唾序で行われ、各層のバター
ニングには、レーザスクライブ法機械的スクライプ法、
フォトエンチング法などのプロセス技術が用いられる。Generally, the formation of such a series-connected compound thin film solar cell involves forming a metal electrode layer, patterning gold xis,
Formation of CulnSei layer, Formation of CdS layer Cu1nS
Patterning of ET layer and CdS layer, formation of transparent electrode, patterning of transparent electrode! The buttering of each layer is done by laser scribing, mechanical scribing,
Process techniques such as photo-etching are used.
［発明が解決しようとする課題〕
直列接続型化合物薄膜太陽電池において良好な性能を得
るためには、金属電極とこれに接触する隣接するユニッ
トセルの透明電極間の抵抗が小さいこと、一つのユニッ
トセル内の金属電極とＣｕｌｎＳｅｉ眉間およびＣｄＳ
層と透明電極間の接触が良好であること、ならびに、特
に傷等によるＣｕｌｎＳｅｚ層やＣｄＳ層の一部欠落に
より、金属電極の一部と透明電極の一部がオーム性接触
する、いわゆるシッートがないことが重要である。[Problems to be Solved by the Invention] In order to obtain good performance in series-connected compound thin film solar cells, it is necessary that the resistance between the metal electrode and the transparent electrode of the adjacent unit cell in contact with the metal electrode be small, and that one unit Metal electrode and CulnSei glabella and CdS in the cell
Good contact between the layer and the transparent electrode, as well as a so-called sheet, in which part of the metal electrode and part of the transparent electrode come into ohmic contact, especially due to part of the CulnSez layer or CdS layer missing due to scratches, etc. It is important that there is no
しかしながら、前記従来方法のように、ＣｕｌｎＳｅｘ
層およびＣｄＳ層の形成と透明電極の形成の間にＣｕｒ
ｎＳｅ、層およびＣｄＳ層のバターニング工程が入るプ
ロセス構成にすると、機械的スクライブ法が主に用いら
れるパターニング工程において、発生する微小な破片や
雰囲気中のほこり等により、ＣｕＩｎＳｅｚ層やＣｄＳ
層に傷がついてシッートが発生したり、表面が汚染され
て透明電極との良好な接触が妨げられることが起こる０
表面の汚染を除去するためには、透明電極の形成前に表
面の清浄化を行うことになるが、この清浄化工程を入れ
ると、ＣｄＳ層やＣｕｌｎＳｅｚ層をさらに傷つけ、シ
ッート発生の確率が高くなり、また当然太陽電池の製造
工数が増すという欠点があった。However, like the conventional method, CulnSex
Cur layer and between the formation of the CdS layer and the formation of the transparent electrode.
If the process is configured to include a patterning step for the CuInSez layer and the CdS layer, the CuInSez layer or CdS layer may be damaged by minute fragments or dust in the atmosphere during the patterning step where mechanical scribing is mainly used.
The layer may be scratched, causing sheets, or the surface may be contaminated, preventing good contact with the transparent electrode.
In order to remove surface contamination, the surface must be cleaned before forming the transparent electrode, but adding this cleaning step will further damage the CdS layer and CulnSez layer, increasing the probability of sheet generation. Naturally, this also has the disadvantage of increasing the number of man-hours required to manufacture the solar cell.
本発明の目的は、上記の欠点を除き、パターニング工程
や清浄化工程によるシッート発生のおそれがなく、少な
い製造工数で製造できる化合物薄膜太陽電池および製造
方法を提供することにある。An object of the present invention is to provide a compound thin-film solar cell and a manufacturing method that eliminate the above-mentioned drawbacks, can be manufactured with fewer man-hours, and are free from the risk of sheet generation during patterning or cleaning steps.
上記の目的を達成するために、本発明は、金属電極、少
なくともカルコパイライト系化合物よりなる膜を含む光
起電力発生層および透明電極を積層してなるユニットセ
ルの複数個を絶縁性基板上に金属電極を基板側にして一
列に配置し、各ユニットセルを直列接続してなる化合物
薄膜太陽電池において、一つのユニットセルの金ｉｔ極
がｌ！Ｊ接するユニットセルの透明電極と光起電力発生
層の低抵抗化された縁部を介して接続されたものとする
。また、本発明の化合物薄膜太陽電池の製造方法は、絶
縁性基板上に複数の金属電極を間隔を介して一列に配置
する工程と、その上に光起電力発生層となる少なくとも
カルコパイライト系化合物よりなる膜を含む化合物ｍ膜
および透明導電膜を積層する工程と、各金属電極の一方
の側の縁部に近接した領域の上の化合物薄膜および透明
導電膜に、ビーム幅方向に中心に対して非対称で金属電
極縁部側へは次第に低下し１．他側へは急激に低下する
強度分布をもつレーザビームを照射し、レーザビームの
中心が照射された領域の化合物薄膜および透明導電膜を
飛散させて複数の光起電力発生層および透明電極に分割
し、その分割部より金属電極の縁部に近い領域の化合物
薄膜を低抵抗化する工程とを含むものとする。In order to achieve the above object, the present invention provides a plurality of unit cells formed by stacking a metal electrode, a photovoltaic generation layer including a film made of at least a chalcopyrite compound, and a transparent electrode on an insulating substrate. In a compound thin film solar cell in which the metal electrodes are arranged in a row with the substrate side and each unit cell is connected in series, the gold IT electrode of one unit cell is l! It is assumed that the transparent electrode of the unit cell in J contact with the photovoltaic force generation layer is connected via the low resistance edge. Further, the method for manufacturing a compound thin film solar cell of the present invention includes a step of arranging a plurality of metal electrodes in a row at intervals on an insulating substrate, and adding at least a chalcopyrite compound to be a photovoltaic generation layer thereon. The step of laminating a compound film and a transparent conductive film including a film consisting of It is asymmetrical and gradually decreases toward the edge of the metal electrode.1. The other side is irradiated with a laser beam with a rapidly decreasing intensity distribution, and the center of the laser beam scatters the compound thin film and transparent conductive film in the irradiated area, dividing it into multiple photovoltaic generation layers and transparent electrodes. The method also includes a step of lowering the resistance of the compound thin film in a region closer to the edge of the metal electrode than the divided portion.
積層された化合物薄膜および透明導電膜にレーザビーム
を、照射する場合、レーザビーム照射の効果はビーム強
度により異なる。強度が十分小さい場合は何も変化が起
こらず、強度を増していくと化合物薄膜により形成され
ているｐ−ｎ接合が破壊されて低抵抗化し、透明導電膜
と金属電極が電気的にショート状態となる。さらに強度
を増すと、カルコパイライト系化合物膜が吸収したレー
ザ光エネルギーにより溶融、飛散し、この時カルコパイ
ライト系化合物膜上の他の化合物薄膜および透明導電膜
も除去される。レーザビームをスリットやミラー等の光
学系によりビーム幅方向の出力強度分布が中心に対して
非対称となるように調整すれば、化合物１膜と透明導電
膜を分割して各ユニットセルの光起電力発生層および透
明電極を形成し、その分割部の一方で透明電極と金属電
極がショートし、他方で絶縁状態を維持し、その結果１
本のレーザビーム照射でユニットセルの直列接続構造を
形成することが可能である。When a laminated compound thin film and a transparent conductive film are irradiated with a laser beam, the effect of the laser beam irradiation varies depending on the beam intensity. If the strength is small enough, no change will occur; if the strength is increased, the p-n junction formed by the compound thin film will be destroyed and the resistance will become low, causing an electrical short between the transparent conductive film and the metal electrode. becomes. When the strength is further increased, the chalcopyrite compound film melts and scatters due to the absorbed laser beam energy, and at this time, other compound thin films and the transparent conductive film on the chalcopyrite compound film are also removed. If the laser beam is adjusted using an optical system such as a slit or mirror so that the output intensity distribution in the beam width direction is asymmetric with respect to the center, the photovoltaic power of each unit cell can be increased by dividing the compound 1 film and the transparent conductive film. A generation layer and a transparent electrode are formed, and the transparent electrode and metal electrode are short-circuited on one side of the divided part, and the insulating state is maintained on the other side, resulting in 1
It is possible to form a series connection structure of unit cells by laser beam irradiation.
以下、本発明の実施例を第２図と共通の部分に同一の符
号を付した図を引用して説明する。第１図（ａｊは本発
明であるレーザ光線によるユニットセル間の分割および
電気的接続を行う直前の化合物薄膜太陽電池の状態を示
す図である。この状態の構造は次のようにして得られる
。即ち、まずガラス基板１上にＭｏ膜をスパッタ法によ
り１−の暑さで形成し、これをレーザスクライブ法によ
りパタニングして短冊状の金属電極２１．２２．２３・
・・を形成する。次に、この上にｐ型ＣｕＩｎＳｅｚ膜
３０およびｎ型ＣｄＳ膜４０をスパッタ法により各々１
．５ ｔｎｓ、０．２ｔｎａの厚さで形成し、これらの
層のバターニングを行うことなく、その上にＺｎＯ層か
らなる透明導電膜５０を１−の厚さでスパッタ法により
積層する。Embodiments of the present invention will be described below with reference to figures in which parts common to those in FIG. 2 are denoted by the same reference numerals. FIG. 1 (aj is a diagram showing the state of a compound thin film solar cell immediately before division and electrical connection between unit cells by a laser beam according to the present invention. The structure in this state can be obtained as follows. That is, first, a Mo film is formed on a glass substrate 1 by sputtering at a temperature of 1-1, and then patterned by a laser scribing method to form strip-shaped metal electrodes 21, 22, 23, and 23.
... to form. Next, a p-type CuInSez film 30 and an n-type CdS film 40 are each formed on top of this by sputtering.
．． 5 tns and 0.2 tna, and without patterning these layers, a transparent conductive film 50 made of a ZnO layer is laminated thereon to a thickness of 1 - by sputtering.
ユニットセル間の分割および電気的接続にはＮｄ：ＹＡ
Ｇレーザを利用した。第３図（ａｌはＮｄ：ＹＡＧレー
ザのＴ Ｅ Ｍ ａ。モードでのビーム幅方向の出力強
度分布を、第３図（ｂ）はこのレーザビームを化合物薄
膜太陽電池に照射した状態を示す図である。ｂ−ｃ−ｄ
の強度範囲の領域では門０膜２０上のＣｕ１ｎＳｅｚ
１１３０． ＣｄＳ膜４０．ＺｎＯ膜５０が除去される
。Nd:YA for division and electrical connections between unit cells
G laser was used. Figure 3 (al is the output intensity distribution in the beam width direction in the T E M a mode of the Nd:YAG laser, and Figure 3 (b) is a diagram showing the state in which this laser beam is irradiated to a compound thin film solar cell. It is.b-c-d
Cu1nSez on the gate 0 membrane 20 in the region of intensity range of
1130. CdS film 40. ZnO film 50 is removed.
一方ａ−ｂ間、ｄ−ｓ間の強度範囲の領域ではＣｕ１ｎ
Ｓｓｌ膜とＣｄＳ膜のｐ−ｎ接合が破壊されて低抵抗化
し、透明電極と金属電極が電気的にショート状態となる
接続部６０が形成される。ユニットセル間の分割および
電気的接続には、このビーム幅のうち、スリットを通し
て中心に対して非対称なａ−ｂ−ｃｄの範囲を利用する
。この強度範囲のレーザビームを、第１図ｆａ）に示し
た積層構造にガラス基板１を通して照射して得られる構
造を第１図（ｂｌに示す、第１図（ｂｌのように照射部
の一方の第３図のａ−ｂに相当する領域では、低抵抗接
続部６Ｌ６２−・・が形成されて透明電極５１，５２．
５３・・・と隣接するユニットセルの金属量ｉ２２，２
３・・・とが電気的に接続され、照射部の他方の第３図
のｂ−ｃｄに相当する領域では、隣接するユニットセル
の透明電極間が電気的に絶縁される。On the other hand, in the region of the intensity range between a-b and d-s, Cu1n
The p-n junction between the Ssl film and the CdS film is destroyed, resulting in a low resistance, and a connection portion 60 is formed in which the transparent electrode and the metal electrode are electrically shorted. For division and electrical connection between unit cells, the a-b-cd range of this beam width, which is asymmetrical with respect to the center through the slit, is utilized. The structure obtained by irradiating a laser beam in this intensity range through the glass substrate 1 shown in Fig. 1 fa) is shown in Fig. 1 (bl). In the region corresponding to a-b in FIG. 3, low-resistance connecting portions 6L62-... are formed, and transparent electrodes 51, 52, .
53... and the metal amount i22,2 of the adjacent unit cell
3... are electrically connected, and in the other region of the irradiation section corresponding to b-cd in FIG. 3, the transparent electrodes of adjacent unit cells are electrically insulated.
上記の実施例では、レーザビームをガラス基板１を通し
て照射したが、セラミック基板を用いる場合には、レー
ザビームを基板の反対側から照射する。なお、金属電極
形成のバターニングをレーザスクライブ法で行う場合は
出力強度は第３図における強度よりも高くする。In the above embodiment, the laser beam was irradiated through the glass substrate 1, but when a ceramic substrate is used, the laser beam is irradiated from the opposite side of the substrate. Note that when patterning for forming metal electrodes is performed by a laser scribing method, the output intensity is set higher than the intensity shown in FIG. 3.
本発明は、光起電力発生層がｐ型Ｃｕ１ｎＳｅ２膜とｎ
型ＣｄＳ膜とからなる場合に限らず、Ｃｕ１ｎＳｅｚ
ｌＩｌによるｐｎ接合、あるいは他のカルコパイライト
系化合物を用いたｐｎ接合によって形成されるときにも
実施できる。In the present invention, the photovoltaic force generation layer is a p-type Cu1nSe2 film and an n-type Cu1nSe2 film.
Cu1nSez film is not limited to the case where it is composed of
It is also possible to form a pn junction using lIl or a pn junction using other chalcopyrite compounds.
本発明によれば、バターニングされた金属電極上に光起
電力発生層のための化合物薄膜を形成後、これらの層の
バターニングを行うことなくその上に透明導電膜を積層
し、ビーム幅方向の出力強度分布が中心に対して非対称
となるレーザ光を照射することにより、隣接するユニッ
トセル間の透明電極−金属電極の接続と隣接するユニー
／ トセル間の分離とを同時に行う方法を適用したので
、以下の効−果がある。According to the present invention, after forming a compound thin film for a photovoltaic generation layer on a patterned metal electrode, a transparent conductive film is laminated thereon without patterning these layers, and the beam width is A method is applied that simultaneously connects transparent electrodes and metal electrodes between adjacent unit cells and separates adjacent units/tocells by irradiating a laser beam whose output intensity distribution in the direction is asymmetric with respect to the center. Therefore, it has the following effects.
何）化合物薄膜の形成と透明電極の形成の間に化合物薄
膜のパターニング工程が入らないため、化合物薄膜に傷
がついてシッートが発生し、太陽電池の性能が低下する
ことを防ぐことができる。What) Since there is no patterning process for the compound thin film between the formation of the compound thin film and the formation of the transparent electrode, it is possible to prevent the compound thin film from being scratched, causing spots, and reducing the performance of the solar cell.
（ロ）バターニング工程の数が一つ減るため製造コスト
が低減する。(b) Manufacturing costs are reduced because the number of buttering steps is reduced by one.
第１図は本発明の一実施例の製造工程を（ａｌ、（ｂ）
の順に示す断面図、第２図は従来の化合物薄膜太陽電池
の断面図、第３図はレーザビーム照射効果を示し、その
うち（４）は出力強度分布図、（ｂＪはｆａ）に示した
レーザビームを化合物薄膜太陽電池に照射した状態の断
面図である。
１ニガラス基板、２１．２２．２３ ：金属電極、３０
．３１３２．３３ ： ｐ型ＣｕＩｎＳｅｚ膜、４０，
４１，４２．４３ ： １１型ｄＳ
６２：
膜、５０ ： ＺｎＯ層、
低抵抗接続部。
Ｌ５２
５３：
イ（１人升Ｊ１士
透明電極、
曾厘ψ沖
第２肥
第１図FIG. 1 shows the manufacturing process of an embodiment of the present invention (al, (b)
Figure 2 is a cross-sectional diagram of a conventional compound thin film solar cell, Figure 3 shows the laser beam irradiation effect, of which (4) is an output intensity distribution diagram, (bJ is fa) FIG. 2 is a cross-sectional view of a compound thin film solar cell irradiated with a beam. 1. Glass substrate, 21.22.23: Metal electrode, 30
．． 3132.33: p-type CuInSez film, 40,
41, 42.43: 11 type dS 62: Film, 50: ZnO layer, low resistance connection. L52 53: I (1 person square J1 person transparent electrode, Zengling ψ offing No. 2 fertilizer Figure 1)
Claims (1)
りなる膜を含む光起電力発生層および透明電極を積層し
てなるユニットセルの複数個を絶縁性基板上に金属電極
を基板側にして一列に配置し、各ユニットセルを直列接
続してなるものにおいて、一つのユニットセルの金属電
極が隣接するユニットセルの透明電極と光起電力発生層
の低抵抗化された縁部を介して接続されたことを特徴と
する化合物薄膜太陽電池。 ２）光起電力発生層がｐ型ＣｕＩｎＳｅ＿ｚ膜およびｎ
型ＣｄＳ膜である請求項１記載の化合物薄膜太陽電池。 ３）絶縁性基板上に複数の金属電極を間隔を介して一列
に配置する工程と、その上に光起電力発生層となる少な
くともカルコパイライト系化合物よりなる膜を含む化合
物薄膜および透明導電膜を積層する工程と、各金属電極
の一方の側の縁部に近接した領域の上の化合物薄膜およ
び透明導電膜に、ビーム幅方向に中心に対して非対称で
金属電極縁部側へは次第に低下し、他側へは急激に低下
する強度分布をもつレーザビームを照射し、レーザビー
ムの中心が照射された領域の化合物薄膜および透明導電
膜を飛散させて複数の光起電力発生層および透明電極に
分割し、その分割部より金属電極の縁部に近い領域の化
合物薄膜を低抵抗化する工程とを含むことを特徴とする
化合物薄膜太陽電池の製造方法。 ４）化合物薄膜がｐ型ＣｕＩｎＳｅ＿ｚ膜およびｎ型Ｃ
ｄＳ膜である請求項３記載の化合物薄膜太陽電池の製造
方法。[Scope of Claims] 1) A plurality of unit cells formed by stacking a metal electrode, a photovoltaic generation layer including a film made of at least a chalcopyrite compound, and a transparent electrode are placed on an insulating substrate, with the metal electrode on the substrate side. In a device in which unit cells are arranged in a row and connected in series, the metal electrode of one unit cell is connected to the transparent electrode of the adjacent unit cell through the low-resistance edge of the photovoltaic generation layer. A compound thin film solar cell characterized in that the compound thin film solar cell is connected to 2) The photovoltaic generation layer is a p-type CuInSe_z film and an n
The compound thin film solar cell according to claim 1, which is a type CdS film. 3) A step of arranging a plurality of metal electrodes in a line at intervals on an insulating substrate, and a transparent conductive film and a compound thin film containing at least a film made of a chalcopyrite compound and a transparent conductive film are formed thereon to serve as a photovoltaic generation layer. During the lamination process, the thin compound film and transparent conductive film on the area close to the edge on one side of each metal electrode are asymmetrical with respect to the center in the beam width direction and gradually decrease toward the edge of the metal electrode. , the other side is irradiated with a laser beam with an intensity distribution that rapidly decreases, and the center of the laser beam scatters the compound thin film and transparent conductive film in the irradiated area, forming multiple photovoltaic generation layers and transparent electrodes. 1. A method for manufacturing a compound thin film solar cell, comprising the steps of: dividing the thin compound film, and lowering the resistance of the compound thin film in a region closer to the edge of the metal electrode than the divided portion. 4) Compound thin film is p-type CuInSe_z film and n-type C
4. The method for manufacturing a compound thin film solar cell according to claim 3, wherein the compound thin film solar cell is a dS film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2211950A JPH0494174A (en) | 1990-08-10 | 1990-08-10 | Compound thin film solar cell and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2211950A JPH0494174A (en) | 1990-08-10 | 1990-08-10 | Compound thin film solar cell and its production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0494174A true JPH0494174A (en) | 1992-03-26 |
Family
ID=16614384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2211950A Pending JPH0494174A (en) | 1990-08-10 | 1990-08-10 | Compound thin film solar cell and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0494174A (en) |
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|---|---|---|---|---|
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| JP2002528888A (en) * | 1998-09-17 | 2002-09-03 | シーメンス ソーラー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for structuring a transparent electrode layer |
| WO2005064693A1 (en) * | 2003-12-25 | 2005-07-14 | Showa Shell Sekiyu K.K. | Integrated thin-film solar cell and its manufacturing method |
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-
1990
- 1990-08-10 JP JP2211950A patent/JPH0494174A/en active Pending
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