WO2008146693A1 - Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film - Google Patents
Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film Download PDFInfo
- Publication number
- WO2008146693A1 WO2008146693A1 PCT/JP2008/059416 JP2008059416W WO2008146693A1 WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1 JP 2008059416 W JP2008059416 W JP 2008059416W WO 2008146693 A1 WO2008146693 A1 WO 2008146693A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electroconductive film
- oxide
- oxide transparent
- transparent electroconductive
- near infrared
- Prior art date
Links
- 239000012789 electroconductive film Substances 0.000 title abstract 7
- 238000006243 chemical reaction Methods 0.000 title abstract 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 2
- 230000005355 Hall effect Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000010420 art technique Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000007790 solid phase Substances 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
This invention provides a low-resistance oxide transparent electroconductive film having excellent transparency in a visible and near infrared region by a low-temperature process at a temperature of 200°C or below. Further, the use of the oxide transparent elctroconductive film as a transparent electrode in a photoelectric conversion element can realize a high-efficiency solar cell having a high spectral sensitivity in a near infrared region which has been unattainable by the prior art technique or a high-performance photodetection element which can detect a very weak near infrared radiation. The oxide transparent electroconductive film is formed of an oxide electroconductive film containing hydrogen atoms. In this oxide electroconductive film, various conditions of a hydrogen atom content of not less than 1% and not more than 10%, an electron mobility of not less than 40 cm2/Vs as measured by Hall effect measurement, a carrier concentration of not more than 5 × 1020 cm-3, and a specific resistance of not more than 1 × 10-3 Ωcm are properly combined. The oxide electroconductive film is grown by solid phase growth using annealing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009516276A JP5229919B2 (en) | 2007-05-23 | 2008-05-22 | Photoelectric conversion element and photodetection element using oxide transparent conductive film |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-136643 | 2007-05-23 | ||
JP2007136643 | 2007-05-23 | ||
JP2007-299216 | 2007-11-19 | ||
JP2007299216 | 2007-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008146693A1 true WO2008146693A1 (en) | 2008-12-04 |
Family
ID=40074946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/059416 WO2008146693A1 (en) | 2007-05-23 | 2008-05-22 | Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film |
Country Status (2)
Country | Link |
---|---|
JP (2) | JP5229919B2 (en) |
WO (1) | WO2008146693A1 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009116580A1 (en) * | 2008-03-19 | 2009-09-24 | 三洋電機株式会社 | Solar cell and method for manufacturing the same |
JP2010186822A (en) * | 2009-02-10 | 2010-08-26 | National Institute Of Advanced Industrial Science & Technology | Photoelectric conversion device, and method of manufacturing the same |
WO2011034145A1 (en) * | 2009-09-18 | 2011-03-24 | 三洋電機株式会社 | Solar battery, solar battery module, and solar battery system |
WO2011034141A1 (en) * | 2009-09-18 | 2011-03-24 | 三洋電機株式会社 | Solar battery, solar battery module, and solar battery system |
WO2011043235A1 (en) * | 2009-10-06 | 2011-04-14 | Jx日鉱日石金属株式会社 | Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film |
EP2479763A1 (en) * | 2009-09-17 | 2012-07-25 | Sanyo Electric Co., Ltd. | Transparent conductive film and device comprising same |
JP2014082387A (en) * | 2012-10-17 | 2014-05-08 | Mitsubishi Electric Corp | Method for manufacturing photovoltaic element and photovoltaic element |
JP2014175441A (en) * | 2013-03-08 | 2014-09-22 | Kaneka Corp | Crystal silicon-based solar battery, and method for manufacturing the same |
WO2015037577A1 (en) * | 2013-09-13 | 2015-03-19 | 独立行政法人産業技術総合研究所 | Optical device |
JP2017092033A (en) * | 2015-11-09 | 2017-05-25 | 日東電工株式会社 | Light permeable conductive film and lighting control film |
TWI617041B (en) * | 2016-12-02 | 2018-03-01 | 財團法人金屬工業研究發展中心 | Silicon-based heterojunction solar cell and fabricating method thereof |
KR20180095884A (en) | 2016-03-29 | 2018-08-28 | 가부시키가이샤 아루박 | A method of manufacturing a substrate having a transparent conductive film, a manufacturing apparatus of a substrate having a transparent conductive film, a substrate having a transparent conductive film, |
JP2018139329A (en) * | 2018-06-11 | 2018-09-06 | 株式会社カネカ | Manufacturing method for crystalline silicon-based solar battery |
JP2018150613A (en) * | 2017-03-13 | 2018-09-27 | 東ソー株式会社 | Composite oxide transparent conductive film, and substrate with transparent conductive film |
JP2019178403A (en) * | 2018-03-30 | 2019-10-17 | 東ソー株式会社 | Composite oxide transparent conductive film, method for manufacturing the same, and base material having transparent conductive film |
CN115413257A (en) * | 2021-03-31 | 2022-11-29 | 法国圣戈班玻璃厂 | Vehicle glazing with near infrared detection system and associated device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5680386B2 (en) * | 2010-11-29 | 2015-03-04 | ジオマテック株式会社 | Transparent conductive film and substrate with transparent conductive film |
WO2017057556A1 (en) * | 2015-09-30 | 2017-04-06 | 積水化学工業株式会社 | Light-transmissive conductive film and manufacturing method for annealed light-transmissive conductive film |
KR101999894B1 (en) * | 2017-08-03 | 2019-07-12 | 주식회사 나노신소재 | Composite oxide sintered body, sputtering target, transparent conductive oxide film and method for producing same |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0494174A (en) * | 1990-08-10 | 1992-03-26 | Fuji Electric Co Ltd | Compound thin film solar cell and its production |
JPH10226598A (en) * | 1997-02-13 | 1998-08-25 | Sanyo Electric Co Ltd | Transparent conductive titanium oxide film and its production |
JPH10294482A (en) * | 1997-04-17 | 1998-11-04 | Kanegafuchi Chem Ind Co Ltd | Silicon-based thin film photoelectric converter |
JP2001047549A (en) * | 1999-08-06 | 2001-02-20 | Mitsui Chemicals Inc | Transparent conductive film |
JP2004014401A (en) * | 2002-06-10 | 2004-01-15 | Konica Minolta Holdings Inc | Transparent conductive substrate for organic electroluminescent display device |
JP2004095240A (en) * | 2002-08-30 | 2004-03-25 | Mitsui Chemicals Inc | Transparent electrode |
JP2004207221A (en) * | 2002-10-04 | 2004-07-22 | Sumitomo Metal Mining Co Ltd | Oxide transparent electrode film, its manufacturing method, transparent conductive substrate, solar battery, and photo detecting element |
WO2004105054A1 (en) * | 2003-05-20 | 2004-12-02 | Idemitsu Kosan Co. Ltd. | Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display |
JP2005259628A (en) * | 2004-03-15 | 2005-09-22 | Konica Minolta Holdings Inc | Method for forming transparent conductive film, transparent conductive film formed thereby, and article having the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004207721A (en) * | 2000-04-19 | 2004-07-22 | Murata Mfg Co Ltd | Surface acoustic wave filter |
-
2008
- 2008-05-22 JP JP2009516276A patent/JP5229919B2/en active Active
- 2008-05-22 WO PCT/JP2008/059416 patent/WO2008146693A1/en active Application Filing
-
2012
- 2012-09-18 JP JP2012205023A patent/JP5510849B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0494174A (en) * | 1990-08-10 | 1992-03-26 | Fuji Electric Co Ltd | Compound thin film solar cell and its production |
JPH10226598A (en) * | 1997-02-13 | 1998-08-25 | Sanyo Electric Co Ltd | Transparent conductive titanium oxide film and its production |
JPH10294482A (en) * | 1997-04-17 | 1998-11-04 | Kanegafuchi Chem Ind Co Ltd | Silicon-based thin film photoelectric converter |
JP2001047549A (en) * | 1999-08-06 | 2001-02-20 | Mitsui Chemicals Inc | Transparent conductive film |
JP2004014401A (en) * | 2002-06-10 | 2004-01-15 | Konica Minolta Holdings Inc | Transparent conductive substrate for organic electroluminescent display device |
JP2004095240A (en) * | 2002-08-30 | 2004-03-25 | Mitsui Chemicals Inc | Transparent electrode |
JP2004207221A (en) * | 2002-10-04 | 2004-07-22 | Sumitomo Metal Mining Co Ltd | Oxide transparent electrode film, its manufacturing method, transparent conductive substrate, solar battery, and photo detecting element |
WO2004105054A1 (en) * | 2003-05-20 | 2004-12-02 | Idemitsu Kosan Co. Ltd. | Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display |
JP2005259628A (en) * | 2004-03-15 | 2005-09-22 | Konica Minolta Holdings Inc | Method for forming transparent conductive film, transparent conductive film formed thereby, and article having the same |
Cited By (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009116580A1 (en) * | 2008-03-19 | 2009-09-24 | 三洋電機株式会社 | Solar cell and method for manufacturing the same |
JP5279814B2 (en) * | 2008-03-19 | 2013-09-04 | 三洋電機株式会社 | Solar cell and manufacturing method thereof |
JP2010186822A (en) * | 2009-02-10 | 2010-08-26 | National Institute Of Advanced Industrial Science & Technology | Photoelectric conversion device, and method of manufacturing the same |
EP2479763A4 (en) * | 2009-09-17 | 2013-11-13 | Sanyo Electric Co | Transparent conductive film and device comprising same |
EP2479763A1 (en) * | 2009-09-17 | 2012-07-25 | Sanyo Electric Co., Ltd. | Transparent conductive film and device comprising same |
US20120167982A1 (en) * | 2009-09-18 | 2012-07-05 | Sanyo Electric Co., Ltd | Solar cell, solar cell module and solar cell system |
CN102473760A (en) * | 2009-09-18 | 2012-05-23 | 三洋电机株式会社 | Solar battery module, and solar battery system |
CN102473761A (en) * | 2009-09-18 | 2012-05-23 | 三洋电机株式会社 | Solar battery, solar battery module, and solar battery system |
JP5533878B2 (en) * | 2009-09-18 | 2014-06-25 | 三洋電機株式会社 | Solar cell, solar cell module and solar cell system |
WO2011034141A1 (en) * | 2009-09-18 | 2011-03-24 | 三洋電機株式会社 | Solar battery, solar battery module, and solar battery system |
EP2479797A1 (en) * | 2009-09-18 | 2012-07-25 | Sanyo Electric Co., Ltd. | Solar battery, solar battery module, and solar battery system |
EP2479796A1 (en) * | 2009-09-18 | 2012-07-25 | Sanyo Electric Co., Ltd. | Solar battery, solar battery module, and solar battery system |
US20120192914A1 (en) * | 2009-09-18 | 2012-08-02 | Sanyo Electric Co., Ltd. | Solar cell, solar cell module and solar cell system |
WO2011034145A1 (en) * | 2009-09-18 | 2011-03-24 | 三洋電機株式会社 | Solar battery, solar battery module, and solar battery system |
EP2479797A4 (en) * | 2009-09-18 | 2013-08-07 | Sanyo Electric Co | Solar battery, solar battery module, and solar battery system |
EP2479796A4 (en) * | 2009-09-18 | 2013-08-07 | Sanyo Electric Co | Solar battery, solar battery module, and solar battery system |
JP5349587B2 (en) * | 2009-10-06 | 2013-11-20 | Jx日鉱日石金属株式会社 | Indium oxide sintered body, indium oxide transparent conductive film, and method for producing the transparent conductive film |
US10037830B2 (en) | 2009-10-06 | 2018-07-31 | Jx Nippon Mining & Metals Corporation | Indium oxide transparent conductive film |
CN102471160A (en) * | 2009-10-06 | 2012-05-23 | 吉坤日矿日石金属株式会社 | Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film |
WO2011043235A1 (en) * | 2009-10-06 | 2011-04-14 | Jx日鉱日石金属株式会社 | Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film |
US8771557B2 (en) | 2009-10-06 | 2014-07-08 | Jx Nippon Mining & Metals Corporation | Indium oxide sintered compact, indium oxide transparent conductive film, and manufacturing method of indium oxide transparent conductive film |
CN105439541A (en) * | 2009-10-06 | 2016-03-30 | 吉坤日矿日石金属株式会社 | Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film |
US9589695B2 (en) | 2009-10-06 | 2017-03-07 | Jx Nippon Mining & Metals Corporation | Indium oxide transparent conductive film |
KR101274279B1 (en) | 2009-10-06 | 2013-06-13 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Indium oxide sintered body, indium oxide transparent conductive film, and method for manufacturing the transparent conductive film |
JP2014082387A (en) * | 2012-10-17 | 2014-05-08 | Mitsubishi Electric Corp | Method for manufacturing photovoltaic element and photovoltaic element |
JP2014175441A (en) * | 2013-03-08 | 2014-09-22 | Kaneka Corp | Crystal silicon-based solar battery, and method for manufacturing the same |
WO2015037577A1 (en) * | 2013-09-13 | 2015-03-19 | 独立行政法人産業技術総合研究所 | Optical device |
JPWO2015037577A1 (en) * | 2013-09-13 | 2017-03-02 | 国立研究開発法人産業技術総合研究所 | Optical device |
JP2017092033A (en) * | 2015-11-09 | 2017-05-25 | 日東電工株式会社 | Light permeable conductive film and lighting control film |
US10720264B2 (en) | 2015-11-09 | 2020-07-21 | Nitto Denko Corporation | Light transmitting conductive film and light control film |
KR20180095884A (en) | 2016-03-29 | 2018-08-28 | 가부시키가이샤 아루박 | A method of manufacturing a substrate having a transparent conductive film, a manufacturing apparatus of a substrate having a transparent conductive film, a substrate having a transparent conductive film, |
US11674217B2 (en) | 2016-03-29 | 2023-06-13 | Ulvac, Inc. | Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell |
TWI617041B (en) * | 2016-12-02 | 2018-03-01 | 財團法人金屬工業研究發展中心 | Silicon-based heterojunction solar cell and fabricating method thereof |
JP2018150613A (en) * | 2017-03-13 | 2018-09-27 | 東ソー株式会社 | Composite oxide transparent conductive film, and substrate with transparent conductive film |
JP2019178403A (en) * | 2018-03-30 | 2019-10-17 | 東ソー株式会社 | Composite oxide transparent conductive film, method for manufacturing the same, and base material having transparent conductive film |
JP7119507B2 (en) | 2018-03-30 | 2022-08-17 | 東ソー株式会社 | COMPOSITE OXIDE TRANSPARENT CONDUCTIVE FILM, MANUFACTURING METHOD THEREOF AND SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM |
JP2018139329A (en) * | 2018-06-11 | 2018-09-06 | 株式会社カネカ | Manufacturing method for crystalline silicon-based solar battery |
CN115413257A (en) * | 2021-03-31 | 2022-11-29 | 法国圣戈班玻璃厂 | Vehicle glazing with near infrared detection system and associated device |
Also Published As
Publication number | Publication date |
---|---|
JP5510849B2 (en) | 2014-06-04 |
JP5229919B2 (en) | 2013-07-03 |
JP2013229283A (en) | 2013-11-07 |
JPWO2008146693A1 (en) | 2010-08-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008146693A1 (en) | Oxide transparent electroconductive film, and photoelectric conversion element and photodetection element using the oxide transparent electroconductive film | |
Qian et al. | Mg-doped p-type β-Ga2O3 thin film for solar-blind ultraviolet photodetector | |
Zhang et al. | Enhanced photoresponse of ZnO nanorods-based self-powered photodetector by piezotronic interface engineering | |
Oshima et al. | Vertical solar-blind deep-ultraviolet Schottky photodetectors based on β-Ga2O3 substrates | |
Tak et al. | Wearable gallium oxide solar-blind photodetectors on muscovite mica having ultrahigh photoresponsivity and detectivity with added high-temperature functionalities | |
Al-Hardan et al. | Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination | |
Hu et al. | Influence of oxygen pressure on the structural and electrical properties of CuO thin films prepared by pulsed laser deposition | |
Ismail et al. | A new route for fabricating CdO/c-Si heterojunction solar cells | |
WO2009037121A8 (en) | Organic photodetector for the detection of infrared radiation, method for the production thereof, and use thereof | |
Gupta et al. | Improvement of photoresponse properties of NiO/p-Si photodiodes by copper dopant | |
Mamat et al. | Fabrication of thin, dense and small-diameter zinc oxide nanorod array-based ultraviolet photoconductive sensors with high sensitivity by catalyst-free radio frequency magnetron sputtering | |
Selman et al. | Fabrication of Cu2O nanocrystalline thin films photosensor prepared by RF sputtering technique | |
Athira et al. | SnO2-NiO heterojunction based self-powered UV photodetectors | |
Hsu et al. | Fabrication of fully transparent indium-doped ZnO nanowire field-effect transistors on ITO/glass substrates | |
Baturay et al. | The effect of Gd doping on the electrical and photoelectrical properties of Gd: ZnO/p-Si heterojunctions | |
Yan et al. | Investigating the single crystal OFET and photo-responsive characteristics based on an anthracene linked benzo [b] benzo [4, 5] thieno [2, 3-d] thiophene semiconductor | |
Ok et al. | All oxide ultraviolet photodetectors based on a p-Cu2O film/n-ZnO heterostructure nanowires | |
Hong et al. | Cupric and cuprous oxide by reactive ion beam sputter deposition and the photosensing properties of cupric oxide metal–semiconductor–metal Schottky photodiodes | |
Zhang et al. | Anion engineering enhanced response speed and tunable spectral responsivity in gallium-oxynitrides-based ultraviolet photodetectors | |
Kim et al. | Fully transparent InZnSnO/β-Ga2O3/InSnO solar-blind photodetectors with high schottky barrier height and low-defect interfaces | |
de Araújo et al. | Reliable Tin dioxide based nanowire networks as ultraviolet solar radiation sensors | |
Bo et al. | Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering | |
Chen et al. | High stability flexible deep-UV detector based on all-oxide heteroepitaxial junction | |
Hädrich et al. | CdTe–CdS solar cells—production in a new baseline and investigation of material properties | |
Huang et al. | Dual functional modes for nanostructured p-Cu2O/n-Si heterojunction photodiodes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08764489 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009516276 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08764489 Country of ref document: EP Kind code of ref document: A1 |