JP2001047549A - Transparent conductive film - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a transparent conductive film of superior durability and electromagnetic wave shielding properties. SOLUTION: A transparent conductive film is formed of a high reflectance transparent thin layer B composed of a metal oxide or a metal sulfide and a metal thin layer C containing at least a silver laminated together repeatedly by 3-5 times by using the B/C as the repeating unit, and another high reflectance transparent thin film layer B is formed on a laminate thus formed, all of which are formed on one main face of a transparent base A, and the abundance ratio between hydrogen atoms and metal atoms in the high reflectance transparent thin film layer B [the number of hydrogen atoms (H)/the number of metal atoms (M)] is 0.05-0.45.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a transparent conductive film. For details, see Plasma Display (PD
P), cathode ray tube (CRT), liquid crystal display (LCD)
The present invention relates to a transparent conductive film that can be suitably used as an electromagnetic wave filter that efficiently reduces electromagnetic waves generated from a display device such as a display device.

[0002]

2. Description of the Related Art With the advancement of information in recent social situations, the importance of a display device that plays a role of a man-machine interface is increasing. Among them, for television,
Large-screen display devices used for personal computers, for displaying guidance at stations and airports, and for providing various other types of information are also required to have high image quality, high efficiency, and thinness.

At present, a plasma display panel (hereinafter, referred to as a PDP) has attracted attention as one of representative candidates for a next-generation large-screen flat panel display, and a part thereof has already begun to enter the market. However,
The PDP has a problem of generating a strong leakage electromagnetic field due to a problem in principle. Leakage electromagnetic fields cause malfunctions of other electric and electronic devices, communication failures, etc.,
Recently, there are concerns about the effects on the human body. Especially PD
From the P device, near-infrared light generated from excited atoms in the plasma acts on electronic devices such as cordless phones and remote controllers.

[0004] Therefore, a display device, particularly a PDP, generally uses a filter (hereinafter, referred to as an electromagnetic wave filter) for shielding a leaked electromagnetic field and near-infrared light. A general configuration of an electromagnetic wave filter includes an electromagnetic wave shield layer formed on one surface of a support plate, and an antireflection layer formed on the other surface of the support plate and the film surface on which the electromagnetic wave shield layer is formed. These members are attached to each other by a method such as coating and used as a PDP optical filter.

At present, as a shielding material for near-infrared rays and an electromagnetic field of an electromagnetic wave filter, a metal mesh which is roughly divided into grounds, a mesh of synthetic resin or metal fiber coated with metal, and a dye which absorbs near-infrared rays are used. And a combination of a grounded transparent conductive thin film typified by indium-tin oxide (ITO) and (in some cases) a dye that absorbs near-infrared light.

[0006] As an example of Japanese Patent Application Laid-Open No. 9-330667,
In Japanese Patent Application Laid-Open Publication No. H10-209, there is an electromagnetic wave shield plate formed by applying a conductive paste in a mesh shape on a transparent resin plate and drying the paste.
Examples of the transparent conductive thin film formed on a substrate include a high refractive index transparent thin film layer (B) on one main surface of a transparent polymer film described in JP-A-10-73719. Dimming in which a metal thin film layer (C) is sequentially laminated four times or more with (B) / (C) as a repeating unit, and a high refractive index transparent thin film layer (B) and a transparent resin layer are further formed thereon. An optical filter for a display to which a film is attached is exemplified. When these electromagnetic wave filters are used, electromagnetic waves efficiently generated from a PDP (housing),
And shield near infrared rays. In particular, in the latter example, a transparent conductive thin film is used as the electromagnetic wave shielding layer, and there is no occurrence of a light-shielding portion or moiré due to the mesh as compared with the former. These electromagnetic wave shield layers themselves are used together with a support plate such as a glass plate or a plastic plate because of insufficient mechanical strength.

[0007] Among them, a laminate of a high refractive index thin film layer represented by a metal oxide such as ITO and a metal thin film layer containing silver as a main component has high transparency and high surface resistivity. It can be preferably used because it has a low and good electromagnetic wave shielding function. However, in the case of a substrate in which the high-refractive-index thin film layer and the metal thin film layer are laminated, I) the occurrence of reflective defects mainly due to the deterioration of the silver layer, and II) the surface resistance value is lower than that of the metal mesh. Since it is higher than an order of magnitude, problems such as insufficient electromagnetic wave shielding performance have occurred.

Various studies have been made to solve this problem, but no sufficient effect has been obtained. In order to solve the above I), for example, Japanese Patent Publication No. 59-44993
As shown in Japanese Patent Application Laid-Open Publication No. H07-107, deterioration of the silver layer could be improved by using the silver thin film layer as a silver-gold thin film layer. But,
In this case, since the resistivity of the silver-gold alloy is higher than that of silver, the surface resistivity becomes high, and the above-mentioned I) and II) cannot be achieved at the same time.

On the other hand, in order to solve the above problem II),
The present inventors have disclosed in Japanese Patent Application Laid-Open No. 10-73718 a method of reducing the thickness of each metal thin film layer in a transparent conductive layer composed of a laminate of a high refractive index transparent thin film layer and a metal thin film layer, and increasing the number of repetitions of lamination to increase transparency. It has been proposed that the resistivity can be further reduced while maintaining the above. However, when silver is used as the metal thin film layer, the problem of deterioration of the silver layer has not been solved. In addition, the publication proposes that the silver layer can be prevented from deteriorating by protecting the peripheral edge of the transparent conductive layer. However, by protecting the peripheral edge, most of the deterioration of the silver layer can be suppressed. However, it was not sufficient, and the problem of deterioration occurring from portions other than the peripheral end remained.

[0010]

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an electromagnetic wave shielding filter having excellent durability and electromagnetic wave shielding properties, which have been difficult to solve with the prior art. To provide a transparent conductive film that can be used.

[0011]

The present inventors have made intensive studies to solve the above-mentioned problems, and as a result, the deterioration of the silver layer of the transparent conductive layer occurs from the surface in contact with the outside air and goes to the inside. The present inventors have found that the degree of progress varies greatly depending on the structure of the high-refractive-index transparent thin film layer, particularly the content of hydrogen atoms in the high-refractive-index transparent thin film layer, and thus completed the present invention.

That is, the present invention provides a high refractive index transparent thin film layer (B) formed of a metal oxide or metal sulfide on one main surface of a transparent substrate (A), and a metal thin film layer containing at least silver. The transparent conductive layer formed from (C) is (B) /
(C) is a transparent conductive film that is repeatedly laminated three to five times with a high refractive index transparent thin film layer (B) formed thereon, wherein the high refractive index transparent thin film layer (B) is Wherein the ratio of the number of hydrogen atoms to the number of metal atoms [the number of hydrogen atoms (H) / the number of metal atoms (M)] is 0.05 to 0.45.

As a preferred embodiment of the transparent conductive film according to the present invention, the ratio of hydrogen atoms to metal atoms in the high refractive index transparent thin film layer (B) [number of hydrogen atoms (H) / number of metal atoms (M)] Is 0.1 to 0.2. In addition, the transparent conductive film in which the metal oxide of the high-refractive-index transparent thin film layer (B) is at least one oxide selected from indium oxide, indium-tin oxide, and tin oxide is exemplified.

The transparent conductive film according to the present invention has high electromagnetic wave shielding performance and excellent environmental resistance. Therefore, it can be suitably used as a filter for electromagnetic wave shielding of a display such as a plasma display (PDP), a cathode ray tube (CRT), and a liquid crystal display (LCD).

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in detail. The transparent conductive film of the present invention comprises a transparent substrate (A)
A transparent conductive thin film layer formed from a high refractive index transparent thin film layer (B) formed of a metal oxide or a metal sulfide and a metal thin film layer (C) containing at least silver. It is manufactured by repeatedly laminating 3 to 5 times with (B) / (C) as a repeating unit, and further laminating a high refractive index transparent thin film layer (B) on the uppermost layer.

The transparent substrate used in the present invention is exemplified by a transparent plastic film. The transparent plastic film is not particularly limited as long as it is transparent, for example,
Homopolymers such as polyethylene terephthalate, polyethersulfone, polyarylate, polyacrylate, polycarbonate, polyetheretherketone, polyethylene, polyester, polypropylene, polyamide, polyimide, and copolymers of these resins with copolymerizable monomers Polymer film consisting of

As a method for forming the transparent plastic film, a known plastic film manufacturing method such as a melt extrusion method, a casting method, and a calendering method can be used. In addition, as described later, the transparent conductive film sometimes has an undesirable color in both transmission color and reflection color.
It is also possible to color the transparent plastic film for the purpose of correcting the color at that time. As a coloring method,
When forming the plastic film, a method of forming a film after mixing with a dye in advance, a method of dispersing the dye in a resin to form an ink, coating and drying, a method of bonding a colored plastic film, and the like can be used.

The total light transmittance of the transparent plastic film is preferably at least 70%, more preferably at least 75%, most preferably at least 80%. The total light transmittance of these transparent plastic films generally does not exceed 92%. However,
It is possible to exceed the above values by increasing the light transmittance by forming an antireflection layer or the like. The thickness of the transparent plastic film is preferably from 25 to 250 μm from the viewpoint of handling properties.

Further, for the purpose of improving the adhesiveness with the transparent conductive layer, an underlayer for improving the adhesiveness of, for example, an aqueous polyurethane-based or silicon-based coating agent on the surface on which the transparent conductive layer is to be formed. It is also possible to form

Unlike the case of the mesh, the transparent conductive film covers the entire electromagnetic wave shielding surface and does not lower the display resolution of the display. In addition, it has near-infrared reflectivity, and has many excellent features such as being capable of being processed in a roll form, which is well suited to the object of the present invention.

The transparent conductive layer is preferably formed on one side of a transparent plastic film. If it is formed on both surfaces, it is difficult to ground the transparent conductive layer, which is not preferable. Since the transparent conductive layer used in the present invention has high transparency and the electromagnetic wave shielding ability is proportional to the surface resistance, it should be formed from a high-refractive-index thin film layer (B) having a low resistivity and a metal thin film layer (C). Is preferred. In the case of a metal oxide-based transparent conductive thin film layer alone such as indium-tin oxide (ITO) or zinc oxide (ZnO) which is generally known as a transparent conductive thin film, in order to lower the surface resistance, the thin film layer is used. Needs to be thickened, in which case the total light transmittance is greatly reduced, which is not preferable. It is preferable that the high refractive index transparent thin film layer (B) and the metal thin film layer (C) are repeatedly laminated. In this case, the outermost layer is preferably a high refractive index transparent thin film layer (B). When the outermost surface layer is a metal thin film layer (C), a direct reflection interface is formed between the air layer or the resin layer and the metal layer, so that light reflection is increased and light transmittance is greatly reduced. Not preferred. In addition, the metal layer is directly exposed to the outside air, and the deterioration of the metal layer proceeds, which is not preferable from this viewpoint.

On one main surface of the transparent plastic film, a high-refractive-index transparent thin film layer (B) and a metal thin film layer (C) are successively laminated 3 to 5 times with (B) / (C) as a repeating unit. It is preferable that a high-refractive-index transparent thin film layer (B) is further formed thereon. If the number of repetitions is larger than the above range, the error in the film thickness of each layer greatly affects the accuracy of the entire optical characteristics, and the productivity is deteriorated. If the number of times of repeated lamination is small, the thickness of each metal thin film layer must be increased in order to effectively shield electromagnetic waves. In that case, the reflection intensity is increased, so that the total light transmittance is significantly reduced, and it becomes difficult to achieve the required optical characteristics, which is not preferable.

The transparent conductive film used in the present invention preferably has a surface resistivity of 0.5 to 8 Ω / □. 0.
More preferably, it is 7 to 4 Ω / □. When the surface resistivity is within the above range, it is possible to achieve both good shielding characteristics and optical characteristics. If the surface resistivity is lower than the above range, the electromagnetic wave shielding characteristics themselves are good, but the light transmittance is undesirably reduced, which is not preferable. On the other hand, if the surface resistivity is higher than the above range, the optical characteristics are good, but the electromagnetic wave shielding characteristics are poor, which is not preferable.

The total light transmittance of the transparent conductive film is preferably 40% or more. It is more preferably at least 50%, most preferably at least 55%. It is not preferable to mount an electromagnetic wave filter using a transparent conductive film having a total light transmittance lower than the above value on a display because a screen becomes dark.

In the present invention, a metal thin film layer (C) is partially used as the transparent conductive layer. Therefore, even if the thicknesses of the metal thin film layer (C) and the transparent refractive index thin film layer (B) are optically optimized, light absorption and reflection by the metal thin film layer cannot be avoided. Therefore, in general, the total light transmittance of the transparent conductive layer used in the present invention does not exceed 80%.

High refractive index transparent thin film layer (B) used in the present invention
Is preferably formed of a material having a refractive index of 1.8 or more. Specific materials which can form such a high refractive index transparent thin film layer (B) include indium, titanium, zirconium, bismuth, tin, zinc, antimony,
Examples include oxides such as tantalum, cerium, neodymium, lanthanum, thorium, magnesium, and gallium, mixtures of these oxides, composite oxides, and zinc sulfide. These oxides or sulfides may have a difference in the stoichiometric composition between the metal and oxygen or sulfur as long as the optical characteristics are not significantly changed. Among these materials, indium oxide and indium-tin oxide (IT
O) and tin oxide can be preferably used because they have high transparency and a high refractive index, as well as a high deposition rate and good adhesion to the metal thin film layer (C).

The thickness of the high-refractive-index transparent thin film layer (B) is determined from required optical characteristics and is not particularly limited, but the thickness of each layer is preferably 2 to 600 nm. 5-200 nm is more preferred. As described above, the high-refractive-index transparent thin film layer (B) is repeatedly laminated and used with the metal thin-film layer (C), but each high-refractive-index transparent thin film layer (B) needs to be made of the same material. There is no need to have the same thickness. As a method for forming the high-refractive-index transparent thin film layer (B), known methods such as a sputtering method, an ion plating method, an ion beam assist method, a vacuum evaporation method, and a wet coating method can be used. Of these,
Sputtering is most preferred.

The ratio of hydrogen atoms to metal atoms in the metal oxide of the high refractive index transparent thin film layer (B) obtained by the above film formation method [(number of hydrogen atoms (H) / number of metal atoms (M)] In order to obtain good electromagnetic wave shielding performance, transparency and durability within the above ranges, a high refractive index formed from a metal oxide or a metal sulfide is preferable. The abundance ratio of hydrogen atoms and metal atoms in the transparent thin film layer (B) [number of hydrogen atoms (H) / number of metal atoms (M)] is 0.1 to
More preferably, it is 0.2. Inclusion of an appropriate amount of hydrogen in the metal oxide of the high-refractive-index transparent thin film layer (B) in the above range increases the stability of the high-refractive-index transparent thin film layer (B) against external factors and increases the chlorine content. This prevents the silver layer from deteriorating due to an active substance represented by Further, when hydrogen is added in the above range, good transparency of the high refractive index transparent thin film layer (B) cannot be obtained.

In order to include hydrogen atoms in the metal oxide of the high-refractive-index transparent thin film layer (B) obtained by the above-described film forming method, for example, a hydrogen gas source such as hydrogen gas is used in the sputtering gas. Mixing is preferred. Also,
In order to obtain a metal oxide having a desired ratio of hydrogen atoms to metal atoms, it is preferable to control a mixing ratio of a hydrogen gas supply source such as a hydrogen gas in a sputtering gas. In order to obtain a high-refractive-index transparent thin film layer (B) that prevents deterioration of the silver layer, when hydrogen gas is used as a supply source, the mixing ratio of hydrogen gas to the main sputtering gas is maintained at 3 to 20% by volume. Is preferred. 7 to 10% by volume is more preferred.

The material of the metal thin film layer (C) is preferably a simple silver metal or a metal layer containing silver. Silver has low surface resistivity, good infrared reflection characteristics,
When laminated with the high-refractive-index transparent thin film layer (B), it can be preferably used because of excellent visible light transmission characteristics.

As in the case of the high-refractive-index transparent thin film layer (B), the thickness of each metal thin film layer (C) is determined from required optical characteristics and surface resistivity. Is preferably not more than 4 nm since it is preferably not an island structure, and preferably 30 nm or less from the viewpoint of transparency. As described above, the metal thin film layer (C) is repeatedly laminated and used with the high refractive index transparent thin film layer (B), but each metal thin film layer (C) does not need to be made of the same material. It does not have to be the same thickness. As a method for forming the metal thin film layer, known methods such as a sputtering method, an ion plating method, an ion beam assist method, a vacuum evaporation method, and a wet coating method can be used. Of these, the sputtering method is most preferred.

The transparent conductive layer is preferably a metal thin film layer (C).
It is also possible to seal the peripheral end of the transparent conductive layer for the purpose of preventing deterioration of the transparent conductive layer. For example, triazine amine compounds,
It is possible to use a thiodipropionate-based compound or a benzimidazole-based compound alone or a transparent resin containing these compounds for the above purpose.

The transparent conductive film thus obtained generally has an absorption in the visible light range, and may exhibit undesirable transmission colors and reflection colors in some cases. For the purpose of the correction, the above-described method of coloring the transparent substrate can be used.

[0034] The transparent conductive film according to the present invention produced as described above preferably has a total light transmittance of 40% or more. It is more preferably at least 50%, most preferably at least 60%. When the total light transmittance is lower than the above value, when this is used as a filter for shielding electromagnetic waves, the display screen becomes dark, which is not preferable. In addition, since a metal thin film layer is used for the transparent conductive thin film used in the present invention, the total light transmittance does not generally exceed 78%. The overall thickness is about 25 to 250 μm, and the surface resistivity is 0.5 to 8
It is about Ω / □.

[0035]

The present invention will be described below with reference to examples. Evaluation items and evaluation methods were performed as follows.

(1) Total light transmittance (%) Using a spectrophotometer [manufactured by Hitachi, Ltd., product name: U-3500 type], arbitrary five points of each of the obtained samples were measured. Calculate the average value.

(2) Surface resistivity (Ω / □) Using a four-probe surface resistivity measuring device [manufactured by Mitsubishi Chemical Co., Ltd., product name: Loresta SP], an arbitrary 10 samples were obtained. Measure the points and calculate the average value.

(3) Environmental resistance (hr) The time until the occurrence of a reflective defect in salt water is measured.
As the salt water, a solution in which 1.8 g of sodium chloride (manufactured by Wako Pure Chemical Industries, Ltd.) was dissolved in 1,000 ml of pure water was used. Each obtained sample is cut out to 100 mm × 100 mm, stored in the above-mentioned salt water at 23 ° C., and the time until a reflective defect having a diameter of 0.1 mm is measured.

(4) Hydrogen atom content (at%) Preparation of standard sample A 1.3 μm thick indium oxide (ITO) film is formed on a silicon wafer. After evacuating to a pressure of 0.01 Pa, the sputtering gas flow (volume) ratio is set to argon gas / oxygen gas / hydrogen gas: 92/5/3, and the gas is introduced until the total pressure becomes 0.5 Pa. In this state, a film is formed by a magnetron DC sputtering method. Measurement of the amount of released hydrogen atoms per unit area of a standard sample by thermal desorption gas mass spectrometry (TDS-MS) Thermal desorption gas mass spectrometer [manufactured by Electronic Science, product name: EM
D-WA100S type]. The heating rate of the sample stage is 60 ° C./min, and the heating range of the sample stage is 60 to 1100 ° C. Standard sample film thickness measurement using a stylus-type profilometer, a stylus-type profilometer [Product name: Decktak, manufactured by Sloan Company]
3030] is used to measure the level difference between the masked portion and the unmasked portion at the time of film formation. From the above results, the average hydrogen concentration in the standard sample ITO film is calculated. SIMS intensity measurement of standard sample by secondary ion mass spectrometry Quadrupole secondary ion mass spectrometer [CAMECA / RI
BER Co., product name: MIQ-256 type] under the following conditions. The primary ion species is Cs ⁺ , the primary ion acceleration voltage is 5 kV, the primary ion current is 100 nA, and the primary ion incident angle is 60 degrees with respect to the perpendicular. The hydrogen / indium intensity ratio of each sample is measured by secondary ion mass spectrometry. Calculation of hydrogen atom content from the above and results The molecular weight and density of the laminated film of each sample were calculated as the molecular weight of ITO:
Calculate as 277.64, density: 7.18 g / cm ³ .

Example 1 Polyethylene terephthalate (PET) having a thickness of 75 μm
Film (Toyobo Co., Ltd., product name: A-410
0) has a laminated structure of indium oxide thin film / silver thin film / indium oxide thin film / silver thin film / indium oxide thin film / silver thin film / indium oxide thin film on one main surface from the PET film side, each having a thickness of 40/10. / 80/10
A transparent conductive film having a thickness of / 80/10/40 nm was obtained. Note that the indium oxide thin film was formed by using indium oxide as a target, evacuating to a pressure of 0.01 Pa, and then adjusting the sputtering gas flow ratio to argon gas / oxygen gas / hydrogen gas = 92/5/3 (volume). Ratio), and were introduced until the total pressure reached 0.5 Pa. In this state, a film was formed by a magnetron DC sputtering method. The silver thin film is formed by using silver as a target, evacuating to a pressure of 0.01 Pa, and then increasing the total pressure to 0.5 P
Ar was introduced until a. In this state, a film was formed by a magnetron DC sputtering method. The total light transmittance, the surface resistivity, the environmental resistance, and the hydrogen atom content in the indium oxide layer of the obtained transparent conductive film were measured by the above methods. The results obtained are summarized in [Table 1].

Example 2 The sputtering gas flow ratio at the time of forming the indium oxide thin film was changed to argon gas / oxygen gas / hydrogen gas = 88/5/7.
A transparent conductive film was obtained in the same manner as in Example 1 except that the volume ratio was changed. The total light transmittance, the surface resistivity, the environmental resistance, and the hydrogen atom content in the indium oxide layer of the obtained transparent conductive film were measured in the same manner as in Example 1. The results are shown in Table 1.

Example 3 The sputtering gas flow ratio at the time of forming the indium oxide thin film was changed to argon gas / oxygen gas / hydrogen gas = 85/5/10.
A transparent conductive film was obtained in the same manner as in Example 1 except that the volume ratio was changed. The total light transmittance, surface resistivity, environmental resistance, and hydrogen atom content in the indium oxide layer of the obtained transparent conductive film were measured in the same manner as in Example 1. The results are shown in Table 1.

COMPARATIVE EXAMPLE 1 The sputtering gas flow ratio at the time of forming an indium oxide thin film was changed to argon gas / oxygen gas / hydrogen gas = 75/5/20.
A transparent conductive film was obtained in the same manner as in Example 1 except that the volume ratio was changed. The total light transmittance, the surface resistivity, the environmental resistance, and the hydrogen atom content in the indium oxide layer of the obtained transparent conductive film were measured in the same manner as in Example 1. The results are shown in Table 1.

Comparative Example 2 The sputtering gas flow ratio at the time of forming an indium oxide thin film was changed to argon gas / oxygen gas / hydrogen gas = 95/5/0.
A transparent conductive film was obtained in the same manner as in Example 1 except that the volume ratio was changed. The total light transmittance, the surface resistivity, the environmental resistance, and the hydrogen atom content in the indium oxide layer of the obtained transparent conductive film were measured in the same manner as in Example 1. The results are shown in Table 1.

[0045]

[Table 1]

[0046]

The transparent conductive film according to the present invention comprises:
Has excellent durability and electromagnetic wave shielding properties. Therefore, it can be suitably used as a filter for electromagnetic wave shielding which has high electromagnetic wave shielding ability which was impossible with the conventional one and is excellent in environmental resistance.

Continued on the front page (51) Int.Cl. ⁷ Identification symbol FI Theme coat II (Reference) H01B 5/14 H05K 9/00 V 5J020 H01Q 17/00 G02B 1/10 A H05K 9/00 Z (72) Inventor Yoshikai Masaaki Aichi 2-1, 1-1 Tango-dori, Minami-ku, Nagoya-shi, Mitsui Chemicals Co., Ltd. 2-1-1 Tango-dori, Minami-ku, Nagoya-shi F-term in Mitsui Chemicals, Inc. (reference) 2K009 BB14 BB24 CC03 CC14 DD03 DD04 EE03 4F100 AA09B AA09D AA17B AA17D AA28B AA28D AA33B AA33D AB01C AB01E EH66 GB41 JA20 JA20A JA20B JA20C JA20D JA20E JD08 JG01 JG04 JL01 JM01E JM02B JM02C JM02D JN01 JN01A JN01B JN01D JN18B JN18D YY00 YY00A YY00B YY00C YY00D YY00E 5E321 AA04 BB23 BB25 GG05 GH01 5G307 FA02 FB01 FB02 FB04 FC02 FC10 5G435 AA14 AA16 FF02 GG33 HH02 HH12 KK07 LL 04 LL08 5J020 BD01 EA04 EA05 EA10

Claims (7)

[Claims] 1. A high refractive index transparent thin film layer (B) formed of a metal oxide or metal sulfide on one main surface of a transparent substrate (A) and a metal thin film layer (C) containing at least silver. A transparent conductive film in which the formed transparent conductive layer is repeatedly laminated 3 to 5 times with (B) / (C) as a repeating unit, and further a high refractive index transparent thin film layer (B) is formed thereon. And the abundance ratio of hydrogen atoms to metal atoms in the high refractive index transparent thin film layer (B) [number of hydrogen atoms (H) / number of metal atoms (M)] is 0.05 to 0.45. Transparent conductive film. 2. The transparent substrate (A) has a thickness of 25 to 250.
The transparent conductive film according to claim 1, wherein the transparent conductive film is a transparent plastic film having a total light transmittance of at least 70%. 3. The metal oxide of the high refractive index transparent thin film layer (B) is at least one oxide selected from indium oxide, indium-tin oxide, and tin oxide. Item 7. The transparent conductive film according to Item 1. 4. The high refractive index transparent thin film layer (B) has a ratio of hydrogen atoms to metal atoms [number of hydrogen atoms (H) / number of metal atoms (M)] of 0.1 to 0.2. The transparent conductive film according to claim 1, wherein: 5. The high-refractive-index transparent thin film layer (B) has a thickness of 5 to 5.
2. The transparent conductive film according to claim 1, wherein the thickness is 200 nm. 6. The metal thin film layer (C) has a thickness of 4 to 30 nm.
The transparent conductive film according to claim 1, wherein 7. The transparent conductive film has a thickness of 25 to 25.
The transparent conductive film according to claim 1, wherein the transparent conductive film has a surface resistivity of 0.5 to 8 Ω / □.