CN112928175B - Preparation method of solar cell module - Google Patents
Preparation method of solar cell module Download PDFInfo
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- CN112928175B CN112928175B CN201911244978.1A CN201911244978A CN112928175B CN 112928175 B CN112928175 B CN 112928175B CN 201911244978 A CN201911244978 A CN 201911244978A CN 112928175 B CN112928175 B CN 112928175B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000011787 zinc oxide Substances 0.000 claims abstract description 52
- 238000005530 etching Methods 0.000 claims abstract description 43
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 42
- 239000011733 molybdenum Substances 0.000 claims abstract description 42
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 29
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 27
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 1
- 229910052951 chalcopyrite Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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Abstract
The invention provides a preparation method of a solar cell module, which comprises the steps of preparing a molybdenum layer on a glass substrate; carrying out first scribing on the molybdenum layer to form P1, wherein the 1 st sub-battery is connected with the molybdenum layer of the (n/2) +1 battery, and the n/2 th sub-battery is connected with the n sub-battery; sequentially preparing a copper indium gallium selenide layer, a cadmium sulfide layer and an intrinsic zinc oxide layer on the molybdenum layer subjected to the first etching; carrying out second scribing on the intrinsic zinc oxide layer to form P2, wherein the P2 is parallel to the P1; preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer after the second etching is finished; carrying out third etching on the aluminum-doped zinc oxide layer to form P3, wherein the P3 is parallel to the P1 and the P2; and scribing for the fourth time to form a scribing line M along the edge P3 at the right side of the n/2 th sub-cell. The solar cell module provided by the invention can reduce the voltage of the copper indium gallium selenide cell module, is beneficial to matching the copper indium gallium selenide cell module with the existing photovoltaic inverter, and reduces the BOS cost of a power station.
Description
Technical Field
The invention relates to a preparation method of a solar cell module.
Background
The current global photovoltaic market mainly comprises crystalline silicon solar cells, but the rapid consumption of energy resources caused by a high-energy-consumption production process cannot be borne by the society, and the photovoltaic industry is bound to develop on a larger scale. Therefore, the development of low-cost, new thin-film solar cells is a necessary trend in the future international photovoltaic industry. The CIGS (CuInxGa (1-x) Se 2) thin-film solar cell is a chalcopyrite crystalline thin-film solar cell which is composed of four elements of Cu (copper), in (indium), ga (gallium) and Se (selenium) In an optimal proportion, and the total thickness of the whole cell thin film is about 3-4 microns. The solar cell is low in cost, stable in performance and strong in radiation resistance, the photoelectric conversion efficiency of the solar cell is the first of various thin-film solar cells at present, the spectral response range is wide, the output power of the solar cell is higher than that of any other solar cell under the light intensity in rainy days, and the solar cell is called as one of the most promising solar cells of the next generation.
Currently, the industrial processes of CIGS at home and abroad comprise Mo layer sputtering, mo (molybdenum) layer laser scribing, CIGS absorption layer forming, cdS (cadmium sulfide) buffer layer forming, zinc oxide layer forming, CIGS layer mechanical scribing, aluminum-doped zinc oxide sputtering, CIGS absorption layer mechanical scribing and Transparent Conductive Oxide (TCO) layer forming, edge cleaning, packaging and testing. The method comprises the following steps of laser scribing a Mo layer, scribing a CIGS layer, cadmium sulfide CdS and ZnO, scribing an absorption layer and a transparent conducting layer, wherein the three scribing processes of the CIGS cell film surface are respectively called as follows: p1, P2 and P3. The panel is divided into sub-cells connected in series by scribing. And finally, laying bus bars on the sub-batteries on the two sides to lead out the current.
The CIGS battery has the characteristics that the working voltage is high, the current is low (lower than 2A) at about 100V, the voltage of a mainstream crystalline silicon battery assembly in the market is low, the current is high, the parameters of a mainstream inverter in the market are matched with the crystalline silicon battery assembly, the inverter is wasted for the CIGS battery assembly, and the power station cost is increased. In order to solve the problem, the voltage of the copper indium gallium selenide battery pack is reduced, the current is increased, and the solution is suitable for the parameters of the current mainstream inverter.
Disclosure of Invention
Aiming at the problem that the voltage and the current of the CIGS solar battery are not matched with the parameters of a market mainstream inverter in the prior art, the invention provides a novel CIGS solar battery assembly, which can reduce the voltage of the CIGS solar battery assembly, is beneficial to matching the CIGS solar battery assembly with a photovoltaic inverter and reduces the BOS cost of a power station.
In a first aspect, the present invention provides a method for manufacturing a solar cell module, comprising:
step A: a molybdenum layer prepared on a glass substrate;
and B: carrying out first scribing on the molybdenum layer to form a first scribing line (P1), wherein the 1 st sub-cell is connected with the molybdenum layer of the (n/2) +1 cell, and the n/2 th sub-cell is connected with the n sub-cell, wherein n is the total number of the sub-cells, and n is an even number;
step C: sequentially preparing a copper indium gallium selenide layer, a cadmium sulfide layer and an intrinsic zinc oxide layer on the molybdenum layer subjected to the first etching;
step D: performing second etching on the intrinsic zinc oxide layer, and breaking the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer to form a second etching line (P2), wherein the second etching line (P2) is parallel to the first etching line (P1);
and E, step E: preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer after the second etching is finished;
step F: carrying out third etching on the aluminum-doped zinc oxide layer, breaking the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a third etching line (P3), thereby completing the interconnection of the solar cell module subcell, wherein the third etching line (P3) is parallel to the first etching line (P1) and the second etching line (P2);
step G: and fourth scribing is carried out, and a scribing line M is scribed along a third scribing line (P3) on the right side of the nth/2 sub-cell.
According to some embodiments of the invention, the method further comprises: in the step B, the molybdenum layer is also subjected to edge cleaning treatment.
According to some embodiments of the invention, the method further comprises: in step G, the solar cell module after the third etching is subjected to edge cleaning, and the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer on the outer edge of the cell region are simultaneously removed to expose the molybdenum layer.
According to some embodiments of the present invention, the first scribe line (P1) is scribed down to the surface of the glass substrate, completely insulating the subcells on both sides of the first scribe line (P1).
According to some embodiments of the invention, the second scribe line (P2) completely cuts off the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer, exposes the molybdenum layer, and does not damage the surface of the molybdenum layer.
According to some embodiments of the invention, the third scribe line (P3) completely cuts off the al-doped zno layer, the intrinsic zno layer, the cds layer, and the cigs layer, exposing the mo layer, and does not damage the mo layer surface.
According to some embodiments of the present invention, the first scribe line (P1) has a width of 50 to 200 μm.
According to some embodiments of the present invention, the second scribe line (P2) has a width of 50 to 200 μm.
According to some embodiments of the present invention, the third scribe line (P3) has a width of 50 to 200 μm.
According to some embodiments of the invention, the width of the scribe line M is 50 to 200 micrometers.
According to one embodiment of the present invention, the width of the first scribe line (P1) is 90 μm.
According to one embodiment of the present invention, the width of the second scribe line (P2) is 70 μm.
According to one embodiment of the present invention, the third scribe line has a width of 50 μm.
According to some embodiments of the present invention, the first scribe line (P1) and the second scribe line (P2) are spaced apart by 100 to 500 micrometers.
According to some embodiments of the present invention, the second scribe line (P2) and the third scribe line (P3) are spaced apart by 100 to 500 micrometers.
According to one embodiment of the present invention, the first scribe line (P1) and the second scribe line (P2) are spaced apart by 120 microns, and the second scribe line (P2) and the third scribe line (P3) are spaced apart by 100 microns.
According to some embodiments of the invention, in step a, the molybdenum layer has a thickness of 300 nm to 1200 nm.
According to some embodiments of the invention, in step C, the copper indium gallium selenide layer is 1.0 to 3.0 microns thick.
According to some embodiments of the invention, in step C, the cadmium sulfide layer has a thickness of 30 to 80 nanometers.
According to some embodiments of the invention, in step C, the intrinsic zinc oxide film layer thickness is 30-80 nm.
According to some embodiments of the invention, in step E, the aluminum-doped zinc oxide film layer has a thickness of 300 to 1000 nm.
According to some embodiments of the invention, the first, second and third scribes use mechanical or laser scribing.
According to a preferred embodiment of the invention, the first, second and third scribes are laser scribes.
According to a preferred embodiment of the present invention, the first scribing, the second scribing and the third scribing are laser scribing with at least one wavelength selected from 1064nm, 532nm and 355 nm.
In a second aspect, the invention provides a solar cell module obtained by the preparation method according to the first aspect, wherein the solar cell module comprises two sub-cells connected in parallel.
According to some embodiments of the invention, the solar cell module is a copper indium gallium selenide thin-film solar cell module.
In a third aspect, the invention provides a solar cell module obtained by the preparation method according to the first aspect or an application of the solar cell module according to the second aspect in the photovoltaic industry.
The scribing method of the CIGS solar cell module can reduce the voltage of the CIGS solar cell module, is beneficial to matching the CIGS solar cell module with the conventional photovoltaic inverter, and reduces the BOS cost of a power station.
Drawings
Fig. 1 is a structural diagram of a conventional copper indium gallium selenide thin-film solar cell.
Fig. 2 shows three scribe lines of a conventional copper indium gallium selenide thin film solar cell.
Fig. 3 shows a schematic representation of the cigs thin-film solar cell module according to example 1 after a first scribing on the mo layer.
Fig. 4 is a diagram of the cigs thin-film solar cell module according to embodiment 1 after a second scribing on the mo layer.
Fig. 5 is a diagram of the cigs thin-film solar cell module according to embodiment 1 after a third scribing on the mo layer.
Fig. 6 is a diagram of the cigs thin-film solar cell module according to embodiment 1 after a fourth scribing on the mo layer.
Detailed Description
The present invention will be further illustrated by the following examples, but is not limited to these examples.
Example 1
The method comprises the following steps of:
(1) Preparing a molybdenum layer on a soda-lime glass substrate;
(2) And B: carrying out first scribing on the molybdenum layer to form a first scribing line (P1), carrying out edge cleaning treatment on the molybdenum layer, keeping the connection between the 1 st sub-cell and the Mo layer of the (n/2) +1 cell, and connecting the n/2 th sub-cell and the n th sub-cell, wherein n is the total number of the sub-cells, and n is an even number (shown in figure 3);
(3) Preparing a copper indium gallium selenide film layer on the molybdenum layer;
(4) Preparing a cadmium sulfide layer on the copper indium gallium selenide film layer;
(5) Preparing an intrinsic zinc oxide layer on the cadmium sulfide layer;
(6) Carrying out second etching, and cutting off the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a second etching line (P2); the second scribe line (P2) and the first scribe line (P1) are parallel (as shown in fig. 4);
(7) Preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer;
(8) Carrying out third etching, namely cutting off the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a third etching line (P3), so that the interconnection of the solar cell module sub-cell is completed, wherein the third etching line (P3) is parallel to the first etching line (P1) and the second etching line (P2); forming a third scribe line (P3) (shown in fig. 5);
(9) And performing fourth scribing, performing edge cleaning treatment on the solar cell module after the third scribing, simultaneously removing the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the outer edge of the cell area to expose the molybdenum layer, and scribing along a third scribing line (P3) at the right side of the nth/2 sub-cell to form a scribing line M (shown in figure 6).
Wherein the thickness of the soda-lime glass is 3mm, the thickness of the Mo back electrode is 0.5 μm, the thickness of the CIGS is 2 μm, the thicknesses of the CdS and the i-ZnO are 50nm, and the thickness of the AZO is 800nm. Each subcell was 4mm wide and 20mm long. The open circuit voltage of the cigs thin-film solar cell module prepared in example 1 is 54V.
Comparative example 1
The method comprises the following steps of:
(1) Preparing a molybdenum layer on a soda-lime glass substrate;
(2) Carrying out first etching on the molybdenum layer to completely etch the molybdenum layer to form a first etching line (P1);
(3) Preparing a copper indium gallium selenide film layer on the molybdenum layer;
(4) Preparing a cadmium sulfide layer on the copper indium gallium selenide film layer;
(5) Preparing an intrinsic zinc oxide layer on the cadmium sulfide layer;
(6) Carrying out second etching, and cutting off the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a second etching line (P2); the second scribing line (P2) is parallel to the first scribing line (P1);
(7) Preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer;
(8) Carrying out third etching, namely cutting off the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a third etching line (P3), so that the interconnection of the solar cell module sub-cell is completed, wherein the third etching line (P3) is parallel to the first etching line (P1) and the second etching line (P2); a third scribe line (P3) is formed.
Wherein the thickness of the soda-lime glass is 3mm, the thickness of the Mo back electrode is 0.5 μm, the thickness of the CIGS is 2 μm, the thicknesses of the CdS and the i-ZnO are 50nm, and the thickness of the AZO is 800nm. Each subcell was 4mm wide and 20mm long. The open circuit voltage of the cigs thin-film solar cell module (shown in fig. 1 and 2) prepared in comparative example 1 is 108V.
It should be noted that the above-mentioned embodiments are only for explaining the present invention, and do not constitute any limitation to the present invention. The present invention has been described in relation to an exemplary embodiment, and it is understood that the words which have been used herein are words of description and illustration, rather than words of limitation. The invention can be modified, as prescribed, within the scope of the claims and without departing from the scope and spirit of the invention. Although the invention has been described herein with reference to particular means, materials and embodiments, the invention is not intended to be limited to the particulars disclosed herein, but rather extends to all other methods and applications having the same functionality.
Claims (12)
1. A method of making a solar cell module, comprising:
step A: preparing a molybdenum layer on a glass substrate;
and B: performing first scribing on the molybdenum layer to form a first scribing line (P1), wherein the 1 st sub-cell is connected with the molybdenum layer of the (n/2) +1 cell, and the n/2 th sub-cell is connected with the nth sub-cell, wherein n is the total number of the sub-cells, and n is an even number;
and C: sequentially preparing a copper indium gallium selenide layer, a cadmium sulfide layer and an intrinsic zinc oxide layer on the molybdenum layer subjected to the first etching;
step D: performing second etching on the intrinsic zinc oxide layer, and breaking the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer to form a second etching line (P2), wherein the second etching line (P2) is parallel to the first etching line (P1);
step E: preparing an aluminum-doped zinc oxide layer on the intrinsic zinc oxide layer after the second etching is finished;
step F: carrying out third etching on the aluminum-doped zinc oxide layer, breaking the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer at the same time to expose the molybdenum layer and form a third etching line (P3), thereby completing the interconnection of the solar cell module subcell, wherein the third etching line (P3) is parallel to the first etching line (P1) and the second etching line (P2);
step G: and fourth scribing is carried out, and a scribing line M is scribed along a third scribing line (P3) on the right side of the nth/2 sub-cell.
2. The method of manufacturing according to claim 1, further comprising: in step B, the molybdenum layer is also subjected to edge cleaning treatment, and/or
In step G, the solar cell module after the third etching is subjected to edge cleaning, and the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer on the outer edge of the cell region are simultaneously removed to expose the molybdenum layer.
3. The manufacturing method according to claim 1 or 2, wherein the first scribe line (P1) is scribed up to the surface of the glass substrate, so that the sub-cells on both sides of the first scribe line (P1) are completely insulated; and/or
The intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer are completely cut off by the second scribing line (P2), the molybdenum layer is exposed, and the surface of the molybdenum layer is not damaged; and/or
And the third scribing line (P3) completely cuts off the aluminum-doped zinc oxide layer, the intrinsic zinc oxide layer, the cadmium sulfide layer and the copper indium gallium selenide layer to expose the molybdenum layer without damaging the surface of the molybdenum layer.
4. The production method according to claim 1 or 2, wherein the width of the first scribe line (P1) is 50 to 200 μm; and/or the width of the second scribe line (P2) is 50-200 microns; and/or the width of the third scribing line is 50-200 microns; and/or the width of the score line M is 50-200 microns.
5. The production method according to claim 1 or 2, wherein the first score line (P1) is spaced from the second score line (P2) by 100 to 500 microns, and the second score line (P2) is spaced from the third score line (P3) by 100 to 500 microns.
6. The production method according to claim 1 or 2, wherein in step a, the molybdenum layer has a thickness of 300 nm to 1200 nm; and/or
In the step C, the thickness of the CIGS layer is 1.0-3.0 microns; the thickness of the cadmium sulfide layer is 30-80 nanometers; the thickness of the intrinsic zinc oxide film layer is 30-80 nanometers; and/or
In step E, the thickness of the aluminum-doped zinc oxide film layer is 300-1000 nanometers.
7. A production method according to claim 1 or 2, characterized in that the first scribing, the second scribing and the third scribing use mechanical scribing or laser scribing.
8. The method of manufacturing of claim 7, wherein the first, second and third scribes use laser scribes.
9. The method of manufacturing according to claim 8, wherein the first scribing, the second scribing and the third scribing are performed by laser scribing using at least one wavelength selected from 1064nm, 532nm and 355 nm.
10. A solar cell module obtained by the preparation method according to any one of claims 1 to 9, wherein the solar cell module comprises two sub-cells connected in parallel.
11. The solar cell module of claim 10, wherein the solar cell module is a copper indium gallium selenide thin film solar cell module.
12. Use of a solar cell module obtained according to the preparation method of any one of claims 1 to 9 or according to claim 10 or 11 in the photovoltaic industry.
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