CN100524846C - Translucent type thin-film solar cell module and manufacturing method thereof - Google Patents
Translucent type thin-film solar cell module and manufacturing method thereof Download PDFInfo
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- CN100524846C CN100524846C CNB2007100081297A CN200710008129A CN100524846C CN 100524846 C CN100524846 C CN 100524846C CN B2007100081297 A CNB2007100081297 A CN B2007100081297A CN 200710008129 A CN200710008129 A CN 200710008129A CN 100524846 C CN100524846 C CN 100524846C
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Abstract
The invention provides a transparent thin-film solar battery module and manufacture method thereof. The manufacture method forms openings in two directions in a transparent eletrode material layer, thus avoiding a negative influence on the process yield rate due to the problem of short circuit caused by the laser cutting process at a high temperature. Additionally, the transparent thin-film solar battery module has the openings exposing a transparent substrate without covered transparent electrodes, thus improving the light transmittance of the battery.
Description
Technical field
The present invention relates to a kind of photovoltaic (photovoltaic) module and manufacture method thereof, and be particularly related to a kind of translucent thin-film solar cell module and manufacture method thereof.
Background technology
Solar energy be a kind of have never exhaust and the free of contamination energy, when solving pollution that present fossil energy faced and problem of shortage, be the focus that attracts most attention always.Wherein, can be electric energy directly with solar cell (solar cell) again, and become present considerable research topic solar energy converting.
At present, in solar cell market, use the battery of monocrystalline silicon and polysilicon to account for more than 90 percent.But these solar cells need about 150 microns to the 350 microns silicon wafer of used thickness as material, and its cost is higher.Moreover, because it is the raw material of solar cell adopt high-quality silicon wafer ingot, because of the obvious growth of use amount, day by day not enough in recent years.Therefore, the research and development of thin-film solar cells (thinfilm solar cell) are to become new developing direction.And thin-film solar cells has low cost, easily large tracts of land production, and advantage such as modularization technology is simple.
Please refer to Fig. 1, it is the schematic diagram that illustrates a kind of film solar battery module of prior art.Film solar battery module 150 comprises glass substrate 152, transparency electrode 154, photoelectric conversion layer 156 and metal electrode 158.Wherein, transparency electrode 154 is disposed on the glass substrate 152.Photoelectric conversion layer 156 is that the mode with corresponding transparency electrode 154 offsets one distance is disposed on the transparency electrode 154.In addition, metal electrode 158 is that the mode with corresponding photoelectric conversion layer 156 offsets one distance is disposed on the photoelectric conversion layer 156, and contacts with the transparency electrode 154 of below.In film solar battery module 150, photoelectric conversion layer normally stacks the structure that forms p-i-n by p N-type semiconductor N, intrinsic (intrinsic) semiconductor, n N-type semiconductor N, light is gone into to shine by glass substrate 152 belows, it is right to see through photoelectric conversion layer 156 absorption generation electronics and hole, via internal electric field electronics is formed voltage and electric current with the hole to separating, transfer to load via lead again and use.In order to promote the efficient of battery, prior art film solar battery module 150 can be made pyramid (pyramid) structure or coarse grooveization (textured) structure (not illustrating) with the surface of transparency electrode 154, to reduce the reflection of light amount.Photoelectric conversion layer uses amorphous (amorphous) silicon thin film usually; but because its energy gap is usually between 1.7 to 1.8eV; can only absorbing wavelength less than the sunlight of 800nm; in order to increase the utilization of light; usually can stack one deck crystallite (micro-crystalline or nano-crystalline) silicon thin film again; form the type that stacks (tandem) solar cell of p-i-n/p-i-n; the energy gap of microcrystal silicon usually between 1.1 to 1.2eV, can absorbing wavelength less than the sunlight of 1100nm.
In early days, involving great expense and making difficultly of solar cell and only can be applied in the special dimensions such as space.Now, the application of solar cell can extend to general private residence, high building building, even camper, portable mini-bar, can utilize the characteristic at large everywhere utilization of its convertible sunlight for electric energy.But above the application-specific, the Silicon Wafer solar cell also is not suitable at some, and the glass curtain of light transmission for example need be arranged, and combines building (building integratedphotovoltaic, application BIPV) with other solar cells.Translucent thin-film solar battery (thin film solar cell ofsee-through type) has advantages such as energy-conservation and attractive in appearance in the middle of these are used, and more meets the demand that human nature is lived.
At present, the existing correlation technique that discloses about the translucent thin-film solar Battery And Its Manufacturing Methods on some United States Patent (USP)s.
At United States Patent (USP) the 6th, 858, in No. 461 (US 6,858,461 B2), a kind of photovoltaic module (" PARTIALLY TRANSPARENT PHOTOVOLATIC MODULES ") of partially transparent is proposed.As shown in Figure 2, photovoltaic module 110 comprises transparency carrier 114, transparency conducting layer 118, backplate 122 and the photoelectric conversion layer between transparency conducting layer 118 and metal electrode 122.Similarly, light can be shone into by transparency carrier 114 belows.In this photovoltaic module 110, can utilize laser cutting (laser scribing) mode to remove part metals electrode 122 and photoelectric conversion layer, and form at least one groove (groove) 140, so that photovoltaic module 110 can reach the purpose of part printing opacity.But, because laser cutting method is at high temperature to carry out, therefore makes metal electrode 122 produce metallic particles or fusion easily and be deposited in groove inside, cause upper and lower electric pole short circuit (short); Perhaps the amorphous silicon photoelectric conversion layer produces crystallization again at trenched side-wall under high temperature, forms the microcrystal silicon of low resistance, makes leakage current increase, and then influences the efficient of technology yield (yield) and solar cell.On the other hand, can make pyramid structure or coarse groove surface texture usually,, so when light is shone into by transparency carrier 114 belows, can produce scattering, fail effectively to improve to cause light transmittance to promote the efficient of battery on transparency conducting layer 118 surfaces.
Hold above-mentionedly, reach the light transmittance of a certain degree, then need more metal electrode and photoelectric conversion layer and divested in order to make solar cell.Please refer to table 1, it is the product specification of the multiple translucent thin-film battery of Japanese MakMax TAIYO KOGYO company.As shown in Table 1,, clearly need remove quite large-area metal electrode and photoelectric conversion layer, make maximum output, efficient and fill up coefficient (fill factor FF) can descend thus in order to improve light transmittance.
Table 1
| Model | KN-38 | KN-45 | KN-60 |
| Size (mm) | 980×950 | 980×950 | 980×950 |
| Light transmittance (%) | 10 | 5 | <1 |
| Maximum output (W) | 38.0 | 45.0 | 58.0 |
| Vpm(V) | 58.6 | 64.4 | 68.0 |
| Ipm?a | 0.648 | 0.699 | 0.853 |
| Voc(V) | 91.8 | 91.8 | 91.8 |
| Isc?a | 0.972 | 1.090 | 1.140 |
| Efficient (%) | 4.1 | 4.8 | 6.2 |
| FF | 0.43 | 0.45 | 0.55 |
In addition, United States Patent (USP) the 4th, 795, No. 500 (US 4795500) propose a kind of photovoltaic element (" PHOTOVOLATIC DEVICE ").As shown in Figure 3, the photovoltaic element comprises transparency carrier 1, transparency conducting layer 3, photoelectric conversion layer 4, metal electrode 5 and photoresist 8.This photovoltaic element in metal electrode 5 and photoelectric conversion layer 4, or even be included in the transparency conducting layer 3, can form hole (hole) 6, to reach the purpose of printing opacity.Yet this patent need use gold-tinted technology, and its relevant device is quite expensive, so can increase cost.And, if this patent uses the laser cutting mode with direct formation hole 6, then can cause metallic particles to pollute and short circuit problem equally, and influence the technology yield.
Summary of the invention
In view of this, purpose of the present invention is providing a kind of translucent thin-film solar cell module and manufacture method thereof exactly, can improve the light transmittance of battery module, and can avoid the problem of short circuit that prior art processes causes and leakage current, and then can improve technology yield and solar battery efficiency.
The present invention proposes a kind of manufacture method of translucent thin-film solar cell module.At first, on transparency carrier, form first electrode material layer.Then, remove part first electrode material layer, to form many articles the one Y direction openings that first electrode material layer can be separated into a plurality of band electrode material layers, and many first directions X openings that intersect a Y direction opening, make first electrode material layer be separated into polylith first electrode of first comb-type electrode and two-dimensional arrangements.Then, form photoelectric conversion layer, cover transparency carrier, first electrode and part first comb-type electrode.Subsequently, remove the part photoelectric conversion layer, to form many articles the 2nd Y direction openings of opposing parallel the one Y direction opening in first electrode top.Afterwards, form second electrode material layer, cover photoelectric conversion layer, first electrode and transparency carrier.Continue it, remove part second electrode material layer and part photoelectric conversion layer, expose many articles the 3rd Y direction openings of first electrode surface with formation, and in the first directions X opening, form many second directions X openings, make second electrode material layer be separated into polylith second electrode of second comb-type electrode and two-dimensional arrangements.
In the manufacture method of above-mentioned translucent thin-film solar cell module, removing the part photoelectric conversion layer when forming the 2nd Y direction opening, more be included in and form many articles the 3rd directions X openings in the first directions X opening.First, second, third Y direction opening and first, second, third directions X opening are to utilize the laser cutting mode to prepare.And first electrode material layer of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.Photoelectric conversion layer is single layer structure or stack of layers structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.Second electrode material layer is a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.
The present invention proposes a kind of translucent thin-film solar cell module in addition, and it has many batteries that are one another in series, and exposes many directions X openings and the Y direction opening of transparency carrier between these batteries.Translucent thin-film solar cell module comprises ground floor electrode, second layer electrode and photoelectric conversion layer.Wherein, the ground floor electrode is configured on the transparency carrier, and the ground floor electrode is made up of polylith first electrode of first comb-type electrode and two-dimensional arrangements.Second layer electrode is configured in ground floor electrode top, and second layer electrode is made up of polylith second electrode of second comb-type electrode and two-dimensional arrangements, wherein this Y direction opening is between this second comb-type electrode and adjacent this second electrode, and this directions X opening is between this polylith second electrode.Above-mentioned, second comb-type electrode is relative two opposite side that are disposed at this transparency carrier along the Y direction with first comb-type electrode, and each piece first electrode and each piece second electrode are to be disposed on this transparency carrier in the mode of overlapping.In addition, photoelectric conversion layer is disposed between ground floor electrode and the second layer electrode.Photoelectric conversion layer is made up of a plurality of light-converting material layers of two-dimensional arrangements.
First electrode of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.Photoelectric conversion layer is single layer structure or stack of layers structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.In addition, second electrode is a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.
The present invention proposes a kind of manufacture method of translucent thin-film solar cell module again.At first, on transparency carrier, form first electrode material layer.Then, remove part first electrode material layer, to form many articles the one Y direction openings that first electrode material layer can be separated into a plurality of band electrode material layers, and intersect these Y direction openings and be many first directions X openings of two-dimensional arrangements, make first electrode material layer become a plurality of first window type electrodes.Then, form photoelectric conversion layer, to cover first window type electrode and the transparency carrier.Subsequently, remove the part photoelectric conversion layer, to form many articles the 2nd Y direction openings of opposing parallel the one Y direction opening in first window type electrode top.Afterwards, on photoelectric conversion layer, form second electrode material layer.Continue it, remove part second electrode material layer and part photoelectric conversion layer, expose many articles the 3rd Y direction openings of the first window type electrode surface with formation, and in the first directions X opening, form many second directions X openings, make second electrode material layer become a plurality of second window type electrodes.
In the manufacture method of above-mentioned translucent thin-film solar cell module,, can further in the first directions X opening, form many articles the 3rd directions X openings in removing this photoelectric conversion layer of part when forming the 2nd Y direction opening.
In the manufacture method of above-mentioned translucent thin-film solar cell module, first, second, third Y direction opening and first, second, third directions X opening are to utilize the laser cutting mode to prepare.And first electrode material layer of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.Photoelectric conversion layer is single layer structure or stack of layers structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.Second electrode material layer is a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.
The present invention reintroduces a kind of translucent thin-film solar cell module, and it has many batteries that are one another in series and are connected in parallel to each other in the Y direction at directions X, and has many Y direction openings and a plurality of directions X openings that expose transparency carrier between these batteries.Translucent thin-film solar cell module comprises first electrode, second electrode and photoelectric conversion layer.Wherein, first electrode is configured on the transparency carrier, and first electrode is made up of the polylith first window type electrode.Second electrode is configured in first electrode top, and second electrode is made up of the polylith second window type electrode.Above-mentioned, this directions X opening is that opening, this Y direction opening of every second window type electrode then is disposed between this polylith second window type electrode, and the second window type electrode and the first window type electrode are overlapped, and the aperture position of this second window type electrode is to be configured in the opening of this first window type electrode.In addition, photoelectric conversion layer is disposed between first electrode and second electrode.Photoelectric conversion layer is made up of a plurality of window type light-converting material layers.
First electrode of above-mentioned translucent thin-film solar cell module is an including transparent conducting oxide layer, and its material for example is zinc oxide, tin ash, tin indium oxide or indium oxide.Photoelectric conversion layer is single layer structure or stack of layers structure.The material of photoelectric conversion layer for example is amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride or organic material.In addition, second electrode is a metal level, and its material for example is aluminium, silver, copper, molybdenum or other metal or alloy that is fit to.
Translucent thin-film solar cell module of the present invention and manufacture method thereof, when making first electrode, form the opening of both direction simultaneously, therefore can make prepared translucent thin-film solar cell module can not have the laser cutting parameter of Yin Gaowen and cause the problem of short circuit and leakage current, and then can improve technology yield and solar battery efficiency.In addition, compared to the prior art translucent thin-film solar cell module, translucent thin-film solar cell module of the present invention has the opening that can expose transparency carrier, can not make pyramid structure or coarse structure because of the transparent oxide electrode surface, cause light scattering, therefore can greatly improve the light transmittance of element.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the schematic diagram that illustrates a kind of film solar battery module of prior art.
Fig. 2 is the schematic diagram that illustrates a kind of photovoltaic module of prior art.
Fig. 3 is the schematic diagram that illustrates a kind of photovoltaic element of prior art.
Fig. 4 a to Fig. 9 c is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that one embodiment of the present of invention illustrated.Wherein, Fig. 4 a, 5a, 6a, 7a, 8a, 9a illustrate to look schematic diagram, and Fig. 4 b, 5b, 6b, 7b, 8b, 9b, 9b ' are the generalized sections that illustrates along hatching I-I ', and Fig. 9 c is the generalized section that illustrates along hatching II-II '.
Figure 10 a to Figure 15 c is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that another embodiment of the present invention illustrated.Wherein, Figure 10 a, 11a, 12a, 13a, 14a, 15a illustrate to look schematic diagram, Figure 10 b, 11b, 12b, 13b, 14b, 15b are the generalized sections that illustrates along hatching I-I ', and Figure 11 c, 12c, 13c, 14c, 15c are the generalized sections that illustrates along hatching II-II '.
Figure 16 is that the transparency electrode with different-thickness places the light transmittance on the glass substrate and the graph of a relation of wavelength.
Description of reference numerals
1,114,402,502: transparency carrier 3,118: transparency conducting layer
4,156: photoelectric conversion layer 5,158: metal electrode
6: hole 8: photoresist
110: photovoltaic module 122: backplate
140: groove 150: film solar battery module
152: glass substrate 154: transparency electrode
400,500: translucent thin-film solar cell module
401,501: battery 404,418,504,520: electrode material layer
406,416,420,506,514,522:Y direction opening
408,422,508,516,524:X direction opening
410,424: electrode 412,426: comb-type electrode
414,512: photoelectric conversion layer 510,526: window type electrode
600,610,620,630,640: curve
Embodiment
Fig. 4 a to Fig. 9 c is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that one embodiment of the present of invention illustrated.Wherein, Fig. 4 a, 5a, 6a, 7a, 8a, 9a illustrate to look schematic diagram, and Fig. 4 b, 5b, 6b, 7b, 8b, 9b, 9b ' are the generalized sections that illustrates along hatching I-I ', and Fig. 9 c is the generalized section that illustrates along hatching II-II '.
At first, please refer to Fig. 9 a, Fig. 9 b, Fig. 9 b ' and Fig. 9 c, the translucent thin-film solar cell module 400 of present embodiment is made up of 401 of plurality of batteries connected in series (cell).And many directions X openings 422 that expose transparency carrier 402 between these batteries 401 open 420 with the Y direction.Therefore, when light (sunlight) is shone into by transparency carrier 402 belows, can pass through directions X opening 422 and Y direction opening 420, and make translucent thin-film solar cell module 400 reach the purpose of printing opacity.
Transparency electrode, metal electrode and photoelectric conversion layer 414 that translucent thin-film solar cell module 400 comprises transparency carrier 402 and is disposed at its top.Wherein, transparency electrode is directly to be configured on the transparency carrier 402, and it is made up of the comb-type electrode 412 and the polylith electrode 410 of two-dimensional arrangements.Metal electrode is to be configured in the transparency electrode top, and it is made up of the comb-type electrode 426 and the polylith electrode 424 of two-dimensional arrangements.And comb-type electrode the 412, the 426th dispose in left and right sides mode, and electrode the 410, the 424th disposes in the translation mode.In addition, photoelectric conversion layer 414 is to be disposed between transparency electrode and the metal electrode, and photoelectric conversion layer 414 is made up of a plurality of photoelectric conversion material layers of two-dimensional arrangements.
Be noted that especially it can make battery module reach higher light transmission features because the translucent thin-film solar cell module 400 of present embodiment has the opening (directions X opening 422) that can expose transparency carrier 402.Therefore, compared to the prior art translucent thin-film solar cell module, the translucent thin-film solar cell module 400 of present embodiment can greatly improve the light transmittance of element.
On the other hand, shown in Fig. 9 c, owing to transparency electrode can be coated by photoelectric conversion layer 414, when therefore forming directions X opening 422, the laser cutting parameter of high temperature can't make metal electrode produce metallic particles or fusion and contact with transparency electrode, and then causes short circuit (short) problem; Perhaps the amorphous silicon photoelectric conversion layer produces crystallization again at trenched side-wall under high temperature, forms the microcrystal silicon of low resistance, makes leakage current increase, and then influences the efficient of technology yield (yield) and solar cell.
Below, describe the manufacture method of the translucent thin-film solar cell module 400 of present embodiment in detail with Fig. 4 a to Fig. 9 c.
At first, please refer to Fig. 4 a and Fig. 4 b, transparency carrier 402 is provided.The material of this transparency carrier 402 for example is glass or other suitable transparent materials.Then, on transparency carrier 402, form electrode material layer 404.Electrode material layer 404 is that (its material for example is zinc oxide (ZnO), tin ash (SnO to transparent conductive oxide for transparent conductive oxide, TCO) film
2), tin indium oxide (indium tinoxide, ITO) or indium oxide (In
2O
3).The formation method of electrode material layer 404 for example is to utilize chemical vapour deposition technique (CVD method), sputtering method (sputtering method) or other suitable methods to prepare.
Certainly,, also can carry out coarse grooveization (textured) surface treatment, to reduce the reflection of light amount to electrode material in order to promote the efficient of battery.The coarse groove surface is comprehended to make and is caused rough surface to make light produce scattering (scattering); reduce reflection of incident light; with the travel distance of increase incident light in photoelectric conversion layer, it can make the surface of electrode material V-shape groove, pyramid (pyramid) structure (not illustrating) or contrary pyramid usually.
Then, please refer to Fig. 5 a and Fig. 5 b, remove partial electrode material layer 404, to form many Y direction openings 406 and many directions X openings 408 that intersect these Y direction openings 406.Wherein, when only forming Y direction opening 406, electrode material layer 404 can be separated into a plurality of band electrode material layers (not illustrating).After forming Y direction opening 406 and directions X opening 408, can make electrode material layer 404 be separated into the polylith electrode 410 of comb-type electrode 412 and two-dimensional arrangements.Hold above-mentionedly, the formation method of Y direction opening 406 and directions X opening 408 for example is to utilize laser cutting (laser scribing) technology to remove partial electrode material layer 404 and form.
Afterwards, please refer to Fig. 6 a and Fig. 6 b, cambium layer photoelectric conversion layer 414 above transparency carrier 402.This photoelectric conversion layer 414 can cover transparency carrier 402, electrode 410 and part comb-type electrode 412.Photoelectric conversion layer 414 can be single layer structure or stack of layers structure.The material of photoelectric conversion layer 414 for example is amorphous silicon and alloy thereof, cadmium sulfide (CdS), copper indium callium diselenide (CIGS) (CuInGaSe
2, CIGS), copper indium two selenium (CuInSe
2, CIS), the sandwich construction that stacks of cadmium telluride (CdTe), organic material (organic material) or above-mentioned material.The formation method of photoelectric conversion layer 414 for example is to utilize chemical vapour deposition technique, sputtering method or other suitable methods to prepare.In addition, be noted that above-mentioned amorphous silicon alloy is meant, in amorphous silicon, add hydrogen atom (H), fluorine atom (F), chlorine atom (Cl), germanium atom (Ge), oxygen atom (O), carbon atom (C) or nitrogen-atoms atoms such as (N).If in amorphous silicon, add hydrogen atom, fluorine atom, chlorine atom, can repair the defective in the silicon thin film, and obtain preferred membrane quality; If in amorphous silicon, add germanium atom, the silicon thin film energy gap is diminished, absorb the sunray of longer wavelength; If in amorphous silicon, add oxygen atom, carbon atom, nitrogen-atoms, then can make the silicon thin film energy gap become big, absorb the sunray of shorter wavelength.
Then, please refer to Fig. 7 a and Fig. 7 b, remove part photoelectric conversion layer 414, to form many Y direction openings 416.These Y direction openings 416 are to be formed at electrode 410 tops, and opposing parallel Y direction opening 406.Above-mentioned, the formation method of Y direction opening 416 for example is to utilize laser cutting parameter to remove part photoelectric conversion layer 414 and form.
Subsequently, please refer to Fig. 8 a and Fig. 8 b, above transparency carrier 402, form one deck electrode material layer 418.This electrode material layer 418 can cover photoelectric conversion layer 414, electrode 410 and transparency carrier 402.Electrode material layer 418 is a metal level, and its material for example is aluminium (Al), silver (Ag), molybdenum (Mo), copper (Cu) or other metal or alloy that is fit to.The formation method of electrode material layer 418 for example is to utilize chemical vapour deposition technique, sputtering method or other suitable methods to prepare.
Continue it, please refer to Fig. 9 a, Fig. 9 b, Fig. 9 b ' and Fig. 9 c, form many Y direction openings 420 and many directions X openings 422 that intersect these Y direction openings 420, so that electrode material layer 418 is separated into the polylith electrode 424 of comb-type electrode 426 and two-dimensional arrangements.Wherein, directions X opening 422 is, removes partial electrode material layer 418 and part photoelectric conversion layer 414 in the directions X opening 408, forms to exposing transparency carrier 402 surfaces.In addition, Y direction opening 420 is by the partial electrode material layer 418 that removes in the Y direction opening 416, to form until exposing electrode 410 surfaces.Shown in Fig. 9 b ', Y direction opening 420 can also be, removes partial electrode material layer 418 and photoelectric conversion layer 414, until exposing electrode 410 surfaces, and is formed at 416 offsets place of relative Y direction opening.Similarly, Y direction opening 420 can utilize laser cutting parameter with directions X opening 422, removes partial electrode material layer 418 and forms with part photoelectric conversion layer 414.Hold above-mentionedly, after each step on carry out, can finish the translucent thin-film solar cell module 400 of present embodiment.
In addition, the translucent thin-film solar cell module 400 of present embodiment also can utilize other modes to prepare.Hold above-mentionedly, when forming Y direction opening 416 (shown in Fig. 7 a and Fig. 7 b) in the photoelectric conversion layer 414, can form many directions X openings (not illustrating) of crossing Y direction opening 416 in the lump, so that photoelectric conversion layer 414 becomes polylith photoelectric conversion layer (not illustrating).Next, follow-up step is same as the previously described embodiments, does not give unnecessary details in this.
The present invention still has other enforcement kenel except the foregoing description.
Figure 10 a to Figure 15 c is the schematic flow sheet according to the manufacture method of the translucent thin-film solar cell module that another embodiment of the present invention illustrated.Wherein, Figure 10 a, 11a, 12a, 13a, 14a, 15a illustrate to look schematic diagram, Figure 10 b, 11b, 12b, 13b, 14b, 15b are the generalized sections that illustrates along hatching I-I ', and Figure 11 c, 12c, 13c, 14c, 15c are the generalized sections that illustrates along hatching II-II '.In Figure 10 a to Figure 15 c, the member identical with Fig. 4 a to Fig. 9 c omits the explanation that may repeat.
At first, please refer to Figure 15 a, Figure 15 b and Figure 15 c, the translucent thin-film solar cell module 500 of present embodiment has many batteries 501 that are one another in series and are connected in parallel to each other in the Y direction at directions X.And, between these batteries 501, have many directions X openings 524 that expose transparency carrier 502.When light (sunlight) is shone into by transparency carrier 502 belows, can pass through directions X opening 524, and make translucent thin-film solar cell module 500 reach the purpose of printing opacity.
Transparency electrode, metal electrode and photoelectric conversion layer 512 that translucent thin-film solar cell module 500 comprises transparency carrier 502 and is disposed at its top.Wherein, transparency electrode is directly to be configured on the transparency carrier 502, and it is made up of polylith window type electrode 510.Metal electrode is to be configured in the transparency electrode top, and it is made up of polylith window type electrode 526.And comb-type electrode the 510, the 526th disposes in the translation mode.In addition, photoelectric conversion layer 512 is to be disposed between transparency electrode and the metal electrode, and photoelectric conversion layer 512 is made up of a plurality of window type light-converting material layers.
Because the translucent thin-film solar cell module 500 of present embodiment has the opening (directions X opening 524) that can expose transparency carrier 402, it can make battery module increase light transmittance.Therefore, compared to the prior art translucent thin-film solar cell module, the translucent thin-film solar cell module of present embodiment can greatly improve the light transmittance of element.In addition; shown in Figure 15 c; because transparency electrode can be coated by photoelectric conversion layer 512; therefore can avoid when forming directions X opening 524; the laser cutting parameter of high temperature can make metal electrode produce metallic particles or fusion and contact with transparency electrode and to cause short circuit and leakage problem, and then influences the efficient of technology yield and solar cell.
Below, describe the manufacture method of the translucent thin-film solar cell module 500 of present embodiment in detail with Figure 10 a to Figure 15 c.
At first, please refer to Figure 10 a and Figure 10 b, transparency carrier 502 is provided.The material of this transparency carrier 502 for example is glass or other suitable transparent materials.Then, on transparency carrier 502, form electrode material layer 504.Electrode material layer 504 is an including transparent conducting oxide layer.
Then, please refer to Figure 11 a, Figure 11 b and Figure 11 c, in electrode material layer 504, formation can be separated into electrode material layer 504 many Y direction openings 506 of a plurality of band electrode material layers, and crossing Y direction opening 506 and be many directions X openings 508 of two-dimensional arrangements.Y direction opening 506 can become electrode material layer 504 a plurality of window type electrodes 510 with directions X opening 508.
Then, please refer to Figure 12 a, Figure 12 b and Figure 12 c, above transparency carrier 502, form one deck photoelectric conversion layer 512.This photoelectric conversion layer 512 can cover transparency carrier 502 and window type electrode 510.
Afterwards, please refer to Figure 13 a, Figure 13 b and Figure 13 c, remove part photoelectric conversion layer 512, to form many Y direction openings 514 and many directions X openings 516.Wherein, many Y direction openings 514 are to be formed at window type electrode 510 tops, and opposing parallel Y direction opening 506; Directions X opening 516 is to be formed in the directions X opening 508, and is two-dimensional arrangements.
In this process, can also remove part photoelectric conversion layer 512, and only form many Y direction openings 514, but not form the directions X opening 516 of Figure 13 a, Figure 13 b and Figure 13 c.The figure of the foregoing description is not illustrated in this, because of its be those skilled in the art as can be known.
Continue it, please refer to Figure 14 a, Figure 14 b and Figure 14 c, above transparency carrier 502, form one deck electrode material layer 520.This electrode material layer 520 is a metal level, and it can cover photoelectric conversion layer 512, window type electrode 510 and transparency carrier 502.
Subsequently, please refer to Figure 15 a, Figure 15 b and Figure 15 c, form many Y direction openings 522 and many directions X openings 524, so that electrode material layer 520 becomes a plurality of window type electrodes 526.Wherein, Y direction opening 522 is by removing partial electrode material layer 520 and part photoelectric conversion layer 512, forming until exposing exit window type electrode 510 surfaces.Directions X opening 524 is to form by removing the partial electrode material layer 520 in the directions X opening 516.After each step on carry out, can finish the translucent thin-film solar cell module 500 of present embodiment.Hold above-mentionedly, if previous step is rapid for only forming many Y direction openings 514, then directions X opening 524 needs to form to remove partial electrode material layer 520 in the directions X opening 516 and part photoelectric conversion layer 512 in this process.
Then, please refer to Figure 16, it is that transparency electrode with different-thickness places the light transmittance on the glass substrate and the graph of a relation of wavelength.Figure 16 is that the tin indium oxide (ITO) with different-thickness is used as transparency electrode and is placed on the glass substrate, and shines to obtain the Computer simulation results of light transmittance with the light of different wave length.Wherein, curve 610,620,630,640 is respectively to be that the ITO of 300nm, 500nm, 1000nm, 2000nm tests with thickness, and curve 600 is not place transparency electrode to test in glass substrate.As shown in Figure 16, the light transmittance of curve 600 is about about 95%, and the light transmittance of curve 610,620,630,640 is relevant with ITO thickness, and the thick more then light transmittance of ITO thickness is low more.By The above results as can be known, translucent thin-film solar cell module of the present invention has the opening that can expose transparency carrier, so when light was shone by the transparency carrier below, the present invention can have higher light transmittance compared to the prior art translucent thin-film solar cell module.
In sum, translucent thin-film solar cell module of the present invention and manufacture method thereof, when making transparency electrode, form the opening of both direction simultaneously, therefore can make prepared translucent thin-film solar cell module can not have the laser cutting parameter of Yin Gaowen and cause the problem of short circuit and leakage current, and influence technology yield and solar battery efficiency.In addition, compared to the prior art translucent thin-film solar cell module, translucent thin-film solar cell module of the present invention has the opening that can expose transparency carrier, can greatly improve the light transmittance of battery module.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those skilled in the art, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when by being as the criterion that claim defined.
Claims (25)
1. the manufacture method of a translucent thin-film solar cell module comprises:
On transparency carrier, form first electrode material layer;
Remove this first electrode material layer of part, to form many articles the one Y direction openings that this first electrode material layer can be separated into a plurality of band electrode material layers, and many first directions X openings that intersect a Y direction opening, make this first electrode material layer be separated into polylith first electrode of first comb-type electrode and two-dimensional arrangements;
Form photoelectric conversion layer, cover this transparency carrier, this first electrode and this first comb-type electrode of part;
Remove this photoelectric conversion layer of part, to form many articles the 2nd Y direction openings of opposing parallel the one Y direction opening in this first electrode top;
Form second electrode material layer, cover this photoelectric conversion layer, this first electrode and this transparency carrier; And
Remove this second electrode material layer of part and this photoelectric conversion layer of part, expose many articles the 3rd Y direction openings of this first electrode surface with formation, and in this first directions X opening, form many second directions X openings, make this second electrode material layer be separated into polylith second electrode of second comb-type electrode and two-dimensional arrangements.
2. the manufacture method of translucent thin-film solar cell module as claimed in claim 1 wherein removing this photoelectric conversion layer of part when forming the 2nd Y direction opening, more is included in and forms many articles the 3rd directions X openings in this first directions X opening.
3. the manufacture method of translucent thin-film solar cell module as claimed in claim 2, wherein the 3rd directions X opening is to utilize the laser cutting mode to prepare.
4. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this first, second, third Y direction opening and this first, second directions X opening are to utilize the laser cutting mode to prepare.
5. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this first electrode material layer is an including transparent conducting oxide layer.
6. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this photoelectric conversion layer is single layer structure or stack of layers structure.
7. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein the material of this photoelectric conversion layer is the sandwich construction that amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride, organic material or above-mentioned material stack.
8. the manufacture method of translucent thin-film solar cell module as claimed in claim 1, wherein this second electrode material layer is a metal level.
9. translucent thin-film solar cell module, it has many batteries that are one another in series, and exposes many directions X openings and the Y direction opening of transparency carrier between this battery, and this module comprises:
The ground floor electrode is configured on this transparency carrier, and this ground floor electrode is made up of polylith first electrode of first comb-type electrode and two-dimensional arrangements;
Second layer electrode, be configured in this ground floor electrode top, and this second layer electrode is made up of polylith second electrode of second comb-type electrode and two-dimensional arrangements, wherein this Y direction opening is between this second comb-type electrode and adjacent this second electrode, this directions X opening is between this polylith second electrode
Wherein this second comb-type electrode is relative two opposite side that are disposed at this transparency carrier along the Y direction with this first comb-type electrode,
And each piece first electrode and each piece second electrode are to be disposed on this transparency carrier in the mode of overlapping; And
Photoelectric conversion layer is disposed between this ground floor electrode and this second layer electrode, and this photoelectric conversion layer is made up of a plurality of light-converting material layers of two-dimensional arrangements.
10. translucent thin-film solar cell module as claimed in claim 9, wherein this first electrode is an including transparent conducting oxide layer.
11. translucent thin-film solar cell module as claimed in claim 9, wherein this photoelectric conversion layer is single layer structure or stack of layers structure.
12. translucent thin-film solar cell module as claimed in claim 9, wherein the material of this photoelectric conversion layer is the sandwich construction that amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride, organic material or above-mentioned material stack.
13. translucent thin-film solar cell module as claimed in claim 9, wherein this second electrode is a metal level.
14. the manufacture method of a translucent thin-film solar cell module comprises:
On transparency carrier, form first electrode material layer;
Remove this first electrode material layer of part, to form many articles the one Y direction openings that this first electrode material layer can be separated into a plurality of band electrode material layers, and intersect a Y direction opening and be many first directions X openings of two-dimensional arrangements, make this first electrode material layer become a plurality of first window type electrodes;
Form photoelectric conversion layer, to cover this first window type electrode and this transparency carrier;
Remove this photoelectric conversion layer of part, to form many articles the 2nd Y direction openings of opposing parallel the one Y direction opening in this first window type electrode top;
On this photoelectric conversion layer, form second electrode material layer; And
Remove this second electrode material layer of part and this photoelectric conversion layer of part, expose many articles the 3rd Y direction openings of this first window type electrode surface with formation, and in this first directions X opening, form many second directions X openings, make this second electrode material layer become a plurality of second window type electrodes.
15. the manufacture method of translucent thin-film solar cell module as claimed in claim 14 is wherein removing this photoelectric conversion layer of part when forming the 2nd Y direction opening, more comprises: form many articles the 3rd directions X openings in this first directions X opening.
16. the manufacture method of translucent thin-film solar cell module as claimed in claim 14, wherein this first, second, third Y direction opening and this first, second, third directions X opening are to utilize the laser cutting mode to prepare.
17. the manufacture method of translucent thin-film solar cell module as claimed in claim 14, wherein this first electrode material layer is an including transparent conducting oxide layer.
18. the manufacture method of translucent thin-film solar cell module as claimed in claim 14, wherein this photoelectric conversion layer is single layer structure or stack of layers structure.
19. the manufacture method of translucent thin-film solar cell module as claimed in claim 14, wherein the material of this photoelectric conversion layer is the sandwich construction that amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride, organic material or above-mentioned material stack.
20. the manufacture method of translucent thin-film solar cell module as claimed in claim 14, wherein this second electrode material layer is a metal level.
21. a translucent thin-film solar cell module, it has many batteries that are one another in series and are connected in parallel to each other in the Y direction at directions X, and has many Y direction openings and a plurality of directions X openings that expose transparency carrier between this battery, and this module comprises:
First electrode is configured on this transparency carrier, and this first electrode is made up of the polylith first window type electrode;
Second electrode is configured in this first electrode top, and this second electrode is made up of the polylith second window type electrode,
Wherein this directions X opening is that opening, this Y direction opening of every second window type electrode then is disposed between this polylith second window type electrode,
And this second window type electrode and this first window type electrode are overlapped, and the aperture position of this second window type electrode is to be configured in the opening of this first window type electrode; And
Photoelectric conversion layer is disposed between this first electrode and this second electrode, and this photoelectric conversion layer is made up of a plurality of window type light-converting material layers.
22. translucent thin-film solar cell module as claimed in claim 21, wherein this first electrode is an including transparent conducting oxide layer.
23. translucent thin-film solar cell module as claimed in claim 21, wherein this photoelectric conversion layer is single layer structure or stack of layers structure.
24. translucent thin-film solar cell module as claimed in claim 21, wherein the material of this photoelectric conversion layer is the sandwich construction that amorphous silicon and alloy, cadmium sulfide, copper indium callium diselenide (CIGS), copper indium two selenium, cadmium telluride, organic material or above-mentioned material stack.
25. translucent thin-film solar cell module as claimed in claim 21, wherein this second electrode is a metal level.
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| CNB2007100081297A CN100524846C (en) | 2007-01-26 | 2007-01-26 | Translucent type thin-film solar cell module and manufacturing method thereof |
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| CN102544127B (en) * | 2011-12-27 | 2014-04-23 | 鸿富锦精密工业（深圳）有限公司 | Solar power supply device and solar battery of solar power supply device |
| TWI499059B (en) * | 2013-03-06 | 2015-09-01 | Neo Solar Power Corp | Solar cell with doping blocks |
| KR101440607B1 (en) * | 2013-04-15 | 2014-09-19 | 광주과학기술원 | Solar cell module and method of manufacturing the same |
| KR20150093291A (en) * | 2014-02-06 | 2015-08-18 | 주성엔지니어링(주) | Photovoltaic with improved visibility and method for manufacturing thereof |
| CN106449793A (en) * | 2016-09-07 | 2017-02-22 | 中山瑞科新能源有限公司 | Method of preparing back electrode of thin film solar cell |
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| CN108400646A (en) * | 2018-01-23 | 2018-08-14 | 华南理工大学 | Lifting tables platform and its charging method with film electricity generation system |
| CN110361898B (en) | 2018-11-27 | 2023-03-14 | 友达光电股份有限公司 | Display panel, driving circuit and display panel manufacturing method |
| PL3783658T3 (en) * | 2019-08-23 | 2022-10-03 | Saule Spółka Akcyjna | A translucent photovoltaic device and a method for manufacturing thereof |
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