CN106449793A - Method of preparing back electrode of thin film solar cell - Google Patents
Method of preparing back electrode of thin film solar cell Download PDFInfo
- Publication number
- CN106449793A CN106449793A CN201610808412.7A CN201610808412A CN106449793A CN 106449793 A CN106449793 A CN 106449793A CN 201610808412 A CN201610808412 A CN 201610808412A CN 106449793 A CN106449793 A CN 106449793A
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- China
- Prior art keywords
- solar cell
- film solar
- thin film
- back electrode
- electrode
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- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000010408 film Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims description 14
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910001120 nichrome Inorganic materials 0.000 claims description 6
- 229910004613 CdTe Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 238000010408 sweeping Methods 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method of preparing a back electrode of a thin film solar cell. The method comprises the following steps of (A) providing a substrate; (B) depositing a transparent conductive oxide film serving as the front electrode of the thin film solar cell on the substrate; (C) depositing the thin film solar cell on the surface of the transparent conductive oxide film; (D) depositing a layer of a metal back electrode on the thin film solar cell; and (E) generating a layer of non-conductive or low-conductivity thin film on the metal back electrode to form a new back electrode. The layer of non-conductive thin film is deposited on the current metal back electrode for covering, and after laser scribing P3 and edge sweeping, particles filling P3 are non-conductive thin films, so that the electrical property of the thin film solar cell is effectively prevented from being lowered after edge sweeping.
Description
Technical field
The present invention relates to photovoltaic solar cell technical field, especially a kind of back electrode of thin film solar cell preparation side
Method.
Background technology
With the worsening shortages of the energy, people pay attention to increasingly to the development and utilization of solar energy.Bigger to area on market,
In hgher efficiency, and the demand of the lower novel solar battery of production cost increasingly increases.In photovoltaic cell field, silicon substrate is thin
Film, cadmium telluride（CdTe）Film, CIGS thin film solar cell because of itself intrinsic material property and his development process, be easy to
The advantages of large area continuous prodution, receive significant attention.
Back electrode for thin-film solar cells performance most important it is desirable to back electrode has good electric property, many
The electric current of thin-film solar cells has good transport capacity, and existing technology typically adopts TCO（Transparent conductive oxide）Plus
Upper metal back electrode, the structure such as AZO/Ag/NiCr/Al of metal back electrode, AZO/Mo, Cu, Mo/Al/Cr etc..Such film
It is high that battery back electrode has a reflectivity, the advantage conducting electricity very well, but the complete P3 of laser grooving and scribing with sweep side after, so the back of the body is electric
The fine dusts that pole produces can be filled in the short circuit causing solar cell local inside the gap of P3, the performance of impact battery.
Content of the invention
For solving above-mentioned technical problem, it is an object of the present invention to provide a kind of thin-film solar cells preventing from sweeping short circuit behind side
Back electrode preparation method.
The technical solution used in the present invention is：
A kind of back electrode of thin film solar cell preparation method, comprises the following steps：（A）Substrate is provided；（B）On the substrate
The transparent conductive oxide film as electrode before hull cell for the deposition；（C）Sink on described transparent conductive oxide film surface
Long-pending thin-film solar cells；（D）Layer of metal back electrode is deposited on described thin-film solar cells；（E）In metal back electrode
Upper generate that one layer non-conductive or the film of low conductivity is to constitute new back electrode.
Described thin-film solar cells is amorphous silicon thin-film solar cell, microcrystalline silicon film solar cell, CIGS are thin
Film solar cell or CdTe thin film solar cell.
Described transparent conductive oxide is ITO, FTO or BZO.
Described back electrode is Mo/Al/Cr electrode, Ag/NiCr/Al electrode, Mo electrode, Al electrode or Au electrode.
Described step（E）Generated in film be AZO or BZO.
Described step（E）Generated in film thickness be 10nm-1000nm.
Described step（E）Middle method for manufacturing thin film includes PVD sputtering method or LPCVD.
Beneficial effects of the present invention：
The present invention by being covered in current metal back electrode one layer of nonconducting film deposited above, in laser grooving and scribing P3
And after sweeping side, the particle being filled into P3 is nonconducting film, efficiently solves thin-film solar cells and sweeps electrical property behind side
Reduction.
Brief description
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further.
Fig. 1 does not carry out back electrode of thin film solar cell structural representation during anti-short circuit for the present invention.
Fig. 2 is the structural representation of back electrode of thin film solar cell during the present invention anti-short circuit.
Specific embodiment
A kind of back electrode of thin film solar cell preparation method of the present invention, including following necessary step：
（A）Substrate is provided；
（B）The transparent conductive oxide film as electrode before hull cell for the deposition on the substrate；This transparent conductive oxide
Thing is ITO, FTO or BZO.
（C）In described transparent conductive oxide film surface deposition film solar cell；Thin-film solar cells is non-
Polycrystal silicon film solar cell, microcrystalline silicon film solar cell, CIGS thin film solar cell or CdTe thin film solar-electricity
Pond.
（D）Layer of metal back electrode is deposited on described thin-film solar cells；This back electrode be Mo/Al/Cr electrode,
Ag/NiCr/Al electrode, Mo electrode, Al electrode or Au electrode.
（E）Metal back electrode generates one layer non-conductive or the film of low conductivity is to constitute new back electrode.Wherein,
The film being generated be AZO or BZO, film thickness be 10nm-1000nm, method for manufacturing thin film include PVD sputtering method or
LPCVD.New back electrode is Mo/Al/Cr/AZO, Ag/NiCr/Al/AZO, Mo/AZO, Al/AZO, Au/AZO；Mo/Al/Cr/
BZO, Ag/NiCr/Al/BZO, Mo/BZO, Al/BZO, Au/BZO etc..
In order to more specifically contrast the present invention implement anti-short circuit before and after situation, first introduce do not carry out anti-short circuit when the film sun
The structural representation of energy battery back electrode.As shown in Figure 1：CVD is adopted to deposit the SnO2 of 800nm first on glass substrate 1:
F film 2, as the transparent front electrode of battery.Then on transparent front electrode 2 deposition film battery electric layer 3, described generating
Layer deposited metal back electrode 4 above hull cell electric layer 3, is then carrying out laser P3 delineation and is sweeping side technique, completing
The preparation of hull cell；
Above-mentioned prior art, during laser completes to sweep side, has dust arrester and collects the molecule producing, part
Particle cannot be collected and stay thin-film solar cells surface, and these molecules can be filled in and make inside the gap of laser scribing
Become the short circuit of solar cell local.
Show that the present invention is the embodiment overcoming the short circuit problem swept in crack approach to be adopted by concrete below：
As shown in Figure 2：CVD is adopted to deposit the SnO2 of 800nm first on glass substrate 1:F film 2（FTO）, as battery
Transparent front electrode.Then VTD method is adopted to deposit the electric layer 3 of 100nm-10um hull cell, thin on transparent front electrode 2
Deposit the Mo/Al/Cr metal back electrode 4 of 50-1000nm above film battery electric layer 3, then adopt on metal back electrode 4
PVD sputtering method deposits the BZO film 5 of 10nm-1000nm, then carries out laser P3 delineation and sweeps side technique, completes hull cell
Preparation；
As described above, the present invention is by being covered in current metal back electrode one layer of nonconducting film deposited above,
Laser grooving and scribing P3 and after sweeping side, the particle being filled into P3 is nonconducting film, efficiently solves thin-film solar cells and sweeps
The reduction of electrical property behind side.
The foregoing is only the preferred embodiments of the present invention, the present invention is not limited to above-mentioned embodiment, as long as with
The technical scheme that essentially identical means realize the object of the invention broadly falls within protection scope of the present invention.
Claims (7)
1. a kind of back electrode of thin film solar cell preparation method is it is characterised in that comprise the following steps：（A）Substrate is provided；
（B）The transparent conductive oxide film as electrode before hull cell for the deposition on the substrate；（C）In described electrically conducting transparent oxygen
Compound film surface deposition film solar cell；（D）Layer of metal back electrode is deposited on described thin-film solar cells；
（E）Metal back electrode generates one layer non-conductive or the film of low conductivity is to constitute new back electrode.
2. a kind of back electrode of thin film solar cell preparation method according to claim 1 it is characterised in that:Described film
Solar cell be amorphous silicon thin-film solar cell, microcrystalline silicon film solar cell, CIGS thin film solar cell or
CdTe thin film solar cell.
3. a kind of back electrode of thin film solar cell preparation method according to claim 1 it is characterised in that:Described transparent
Conductive oxide is ITO, FTO or BZO.
4. a kind of back electrode of thin film solar cell preparation method according to claim 1 it is characterised in that:Described back of the body electricity
Extremely Mo/Al/Cr electrode, Ag/NiCr/Al electrode, Mo electrode, Al electrode or Au electrode.
5. a kind of back electrode of thin film solar cell preparation method according to claim 1 it is characterised in that:Described step
（E）Generated in film be AZO or BZO.
6. according to claim 1 or 5 a kind of back electrode of thin film solar cell preparation method it is characterised in that:Described
Step（E）Generated in film thickness be 10nm-1000nm.
7. a kind of back electrode of thin film solar cell preparation method according to claim 1 it is characterised in that:Described step
（E）Middle method for manufacturing thin film includes PVD sputtering method or LPCVD.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610808412.7A CN106449793A (en) | 2016-09-07 | 2016-09-07 | Method of preparing back electrode of thin film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610808412.7A CN106449793A (en) | 2016-09-07 | 2016-09-07 | Method of preparing back electrode of thin film solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449793A true CN106449793A (en) | 2017-02-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610808412.7A Pending CN106449793A (en) | 2016-09-07 | 2016-09-07 | Method of preparing back electrode of thin film solar cell |
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| Country | Link |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232058A (en) * | 2007-01-26 | 2008-07-30 | 财团法人工业技术研究院 | Translucent type thin-film solar cell module and manufacturing method thereof |
| CN102097507A (en) * | 2009-12-15 | 2011-06-15 | 比亚迪股份有限公司 | Glass and preparation method thereof |
| CN202363460U (en) * | 2011-11-18 | 2012-08-01 | 深圳市创益科技发展有限公司 | Low-light thin-film solar cell |
| CN203232875U (en) * | 2013-04-11 | 2013-10-09 | 江苏武进汉能光伏有限公司 | Building integrated photovoltaic product |
| CN105023985A (en) * | 2015-07-28 | 2015-11-04 | 聚灿光电科技股份有限公司 | LED (Light Emitting Diode) chip and preparation method thereof |
-
2016
- 2016-09-07 CN CN201610808412.7A patent/CN106449793A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101232058A (en) * | 2007-01-26 | 2008-07-30 | 财团法人工业技术研究院 | Translucent type thin-film solar cell module and manufacturing method thereof |
| CN102097507A (en) * | 2009-12-15 | 2011-06-15 | 比亚迪股份有限公司 | Glass and preparation method thereof |
| CN202363460U (en) * | 2011-11-18 | 2012-08-01 | 深圳市创益科技发展有限公司 | Low-light thin-film solar cell |
| CN203232875U (en) * | 2013-04-11 | 2013-10-09 | 江苏武进汉能光伏有限公司 | Building integrated photovoltaic product |
| CN105023985A (en) * | 2015-07-28 | 2015-11-04 | 聚灿光电科技股份有限公司 | LED (Light Emitting Diode) chip and preparation method thereof |
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Application publication date: 20170222 |
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