CN203232875U

CN203232875U - Building integrated photovoltaic product

Info

Publication number: CN203232875U
Application number: CN 201320182621
Authority: CN
Inventors: 金琳虎; 王华磊; 柴士磊; 胡居涛; 庄春泉
Original assignee: JIANGSU WUJIN HANNENG PHOTOVOLTAIC CO Ltd
Current assignee: Hanergy Mobile Energy Holdings Group Co Ltd
Priority date: 2013-04-11
Filing date: 2013-04-11
Publication date: 2013-10-09
Anticipated expiration: 2023-04-11

Abstract

The utility model discloses a building integrated photovoltaic product comprising a plane transparent substrate, a transparent conductive layer, an electricity generation layer, a back electrode layer, a protection layer and a backboard layer. The transparent conductive layer is plated on the plane transparent substrate and first insulation grooves are engraved in the transparent conductive layer; the electricity generation layer is plated on the transparent conductive layer and second insulation grooves are engraved in the electricity generation layer; the back electrode layer comprises a first AZO film layer plated on the electricity generation layer, a conductive metal layer plated on the first AZO film layer and a second AZO film layer plated on the conductive metal layer; laser line grooves interconnected from top to bottom are etched in the electricity generation layer and the back electrode layer; the second AZO film layer is encapsulated on the protection layer and the backboard layer is encapsulated on the protection layer. According to the building integrated photovoltaic product, light transmission ability and better conductivity are ensured, the thickness of an AZO film is controlled, processing time is short and series resistance will not be too large.

Description

A kind of BIPV product

Technical field

The utility model relates to a kind of BIPV product.

Background technology

Adopt at present thin-film solar cells to prepare the BIPV product, it is that to adopt plating AZO(AZO be the abbreviation of the ZnO transparent conductive glass that mixes of aluminium to back electrode that a kind of method is wherein arranged) rete, reach the effect of conduction and printing opacity.In order to guarantee conductivity and light transmission preferably, this method need increase the AZO thickness and reduce resistance, and the influence that brings thus is: increased the processing procedure time, and resistance is excessive.

The utility model content

Technical problem to be solved in the utility model provides a kind ofly has light transmission and conductivity preferably, and the BIPV product that AZO also can be controlled.

In order to solve the problems of the technologies described above, technical scheme provided by the utility model is: a kind of BIPV product comprises planar transparent substrate, transparency conducting layer, electric layer, dorsum electrode layer, protective layer and backsheet layer; Described transparency conducting layer is plated on the planar transparent substrate, and transparency conducting layer is carved with first insulation tank; Described electric layer is plated on the transparency conducting layer, is carved with second insulation tank on the electric layer; Described dorsum electrode layer comprises the AZO rete that is plated on the electric layer, be plated in the conductive metal layer on the AZO rete and be plated in the 2nd AZO rete on the conductive metal layer; Etching has the laser wire casing that is communicated with up and down on described electric layer and the dorsum electrode layer; Described protective layer is encapsulated on the 2nd AZO rete; Described backsheet layer is encapsulated on the protective layer.

The thickness of the one AZO rete of described dorsum electrode layer is 70 to 80nm.

It is 10 to 20nm that the conductive metal layer of described dorsum electrode layer adopts the thickness of aluminium or silver.

The thickness of the 2nd AZO rete of described dorsum electrode layer is 60 to 100nm.

After having adopted technique scheme, the utlity model has following beneficial effect: the AZO rete control thickness of (1) dorsum electrode layer of the present utility model, and guarantee the unabsorbed light generation of main wavelength total reflection, thus guarantee photoelectric conversion efficiency; The back electrode conductive metal layer adopts aluminium or silver, and thickness is 10 to 20nm, guarantees that conductance guarantees light transmission simultaneously; The 2nd AZO rete plays the effect of protection conductive metal layer, guarantees light transmittance simultaneously; Therefore, the utility model can also guarantee conductivity preferably when guaranteeing light transmission, and the AZO thickness also is under control simultaneously, and the processing procedure time is short, and series resistance can be not excessive.

(2) thickness of an AZO rete of dorsum electrode layer of the present utility model is 70 to 80nm, and this thickness can guarantee the total reflection performance of good light.

Description of drawings

Content of the present utility model is easier to be expressly understood in order to make, and according to specific embodiment also by reference to the accompanying drawings, the utility model is described in further detail, wherein below

Fig. 1 is structural representation of the present utility model.

Label in the accompanying drawing is:

Planar transparent substrate 1, transparency conducting layer 2, first insulation tank 21, electric layer 3, second insulation tank 31, dorsum electrode layer 4, an AZO rete 41, conductive metal layer 42, the 2nd AZO rete 43, laser wire casing 3-4, protective layer 5, backsheet layer 6.

Embodiment

(embodiment 1)

See Fig. 1, the BIPV product of present embodiment comprises planar transparent substrate 1, transparency conducting layer 2, electric layer 3, dorsum electrode layer 4, protective layer 5 and backsheet layer 6.

Transparency conducting layer 2 is plated on the planar transparent substrate 1, and transparency conducting layer 2 is carved with first insulation tank 21.Electric layer 3 is plated on the transparency conducting layer 2, is carved with second insulation tank 31 on the electric layer 3.Dorsum electrode layer 4 comprises the AZO rete 41 that is plated on the electric layer 3, be plated in the conductive metal layer 42 on the AZO rete 41 and be plated in the 2nd AZO rete 43 on the conductive metal layer 42.The thickness of the one AZO rete 41 of dorsum electrode layer 4 is 70 to 80nm.It is 10 to 20nm that the conductive metal layer 42 of dorsum electrode layer 4 adopts the thickness of aluminium or silver.The thickness of the 2nd AZO rete 43 of dorsum electrode layer 4 is 60 to 100nm.Etching has the laser wire casing 3-4 that is communicated with up and down on electric layer 3 and the dorsum electrode layer 4.Protective layer 5 is encapsulated on the 2nd AZO rete 43.Backsheet layer 6 is encapsulated on the protective layer 5.

The one AZO rete 41 control thickness, and guarantee that unabsorbed light all reflects, thus guarantee photoelectric conversion efficiency.The 2nd AZO rete 43 plays the effect of protection conductive metal layer 42, guarantees light transmittance simultaneously.When guaranteeing light transmission, can also guarantee conductivity preferably, the AZO thickness also is under control simultaneously, and the processing procedure time is short, and series connection-resistance can be not excessive.

Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.

Claims

1. a BIPV product is characterized in that: comprise planar transparent substrate (1), transparency conducting layer (2), electric layer (3), dorsum electrode layer (4), protective layer (5) and backsheet layer (6); Described transparency conducting layer (2) is plated on the planar transparent substrate (1), and transparency conducting layer (2) is carved with first insulation tank (21); Described electric layer (3) is plated on the transparency conducting layer (2), is carved with second insulation tank (31) on the electric layer (3); Described dorsum electrode layer (4) comprises the AZO rete (41) that is plated on the electric layer (3), be plated in the conductive metal layer (42) on the AZO rete (41) and be plated in the 2nd AZO rete (43) on the conductive metal layer (42); Described electric layer (3) and dorsum electrode layer (4) are gone up etching the laser wire casing (3-4) that is communicated with up and down; Described protective layer (5) is encapsulated on the 2nd AZO rete (43); Described backsheet layer (6) is encapsulated on the protective layer (5).

2. a kind of BIPV product according to claim 1 is characterized in that: the thickness of an AZO rete (41) of described dorsum electrode layer (4) is 70 to 80nm.

3. a kind of BIPV product according to claim 1 is characterized in that: it is 10 to 20nm that the conductive metal layer (42) of described dorsum electrode layer (4) adopts the thickness of aluminium or silver.

4. a kind of BIPV product according to claim 1 is characterized in that: the thickness of the 2nd AZO rete (43) of described dorsum electrode layer (4) is 60 to 100nm.