CN205810834U - A kind of translucent film solar battery structure - Google Patents
A kind of translucent film solar battery structure Download PDFInfo
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- CN205810834U CN205810834U CN201620796548.6U CN201620796548U CN205810834U CN 205810834 U CN205810834 U CN 205810834U CN 201620796548 U CN201620796548 U CN 201620796548U CN 205810834 U CN205810834 U CN 205810834U
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- sputtering method
- film
- solar battery
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
This utility model discloses a kind of translucent film solar battery structure, including glass substrate and superposition TCO conductive glass layer on the glass substrate, it is superimposed upon the resistance buffer layer on TCO conductive glass layer, immersion method is used to be coated on resistance buffer layer, and be the CdS film of N type junction structure, galvanoplastic are used to electroplate in this CdS film, and be the CdTe thin film of p-type structure, use the ZnTe layer that RF sputtering method is deposited in CdTe thin film, use the Cu layer that magnetron sputtering method is deposited on ZnTe layer, use the Au layer that magnetron sputtering method is deposited on Cu layer, and the copper-gold alloy layer that employing magnetron sputtering method is deposited on Au layer equally.This utility model is reasonable in design, with low cost, it is effectively increased the transmitance of light so that the photoelectric transformation efficiency of battery and stability are increased dramatically and strengthen, and reduces the cost of manufacture, therefore, this utility model has higher practical value and promotional value.
Description
Technical field
This utility model relates to a kind of solaode, particularly relates to a kind of translucent thin-film solar cells knot
Structure.
Background technology
Thin-film solar cells is made translucent device and is used for the aspects such as vehicle glass, building glass, family's glaze, be
The most important application direction.Translucent solar cell requires while allowing visible ray pass through, and cuts off and has human body
The ultraviolet of evil also absorbs some visible light and near infrared light generates electricity.
At present, translucent thin-film solar cells is all based on the solaode of high-molecular organic material, but, by
In device architecture and the restriction of transparency electrode, the photoelectric transformation efficiency of existing translucent thin-film solar cells is all universal relatively
Low, and less stable, and manufacturing cost is higher, is unfavorable for large-scale promotion application.
Utility model content
The purpose of this utility model is to provide a kind of translucent film solar battery structure, solves existing semi-transparent
Bright thin-film solar cells exists that photoelectric transformation efficiency is low, poor stability and the high problem of manufacturing cost.
For achieving the above object, the technical solution adopted in the utility model is as follows:
A kind of translucent film solar battery structure, including glass substrate and the TCO being superimposed upon on this glass substrate
Conductive glass layer, also includes the resistance buffer layer being superimposed upon on TCO conductive glass layer, uses immersion method to be coated in this resistance buffering
On layer and be the CdS film of N type junction structure, use galvanoplastic plating in this CdS film and be the CdTe thin film of p-type structure,
Use the ZnTe layer that RF sputtering method is deposited in this CdTe thin film, use magnetron sputtering method to be deposited on the Cu layer on this ZnTe layer,
Magnetron sputtering method is used to be deposited on the Au layer on this Cu layer, and the same copper using magnetron sputtering method to be deposited on this Au layer gold
Alloy-layer.
As preferably, the thickness of described CdS film is 50～100nm.
As preferably, the thickness of described CdTe thin film is 200～500nm.
As preferably, the thickness of described ZnTe layer is 20nm.
As preferably, the thickness of described Cu layer is 2nm.
As preferably, the thickness of described Au layer is 30nm.
Compared with prior art, this utility model has the advantages that
(1) this practicality is new by arranging CdS film and the CdTe thin film of p-type structure of N type junction structure, and the PN junction constituted can
To absorb the light of extensive wavelength, and efficiently produce electric current and voltage, then by the ZnTe layer arranged, Cu layer, Au layer and copper gold
Alloy-layer, can make the light of certain wavelength be reflected back toward in absorbed layer quasiconductor (PN junction), and makes the light of other part wavelength saturating
Cross, it is achieved thereby that the printing opacity of light and the conduction of electric current.Consequently, it is possible to this utility model is while realizing generating, moreover it is possible to
Make visible light-transmissive, thus photoelectric transformation efficiency and the stability of battery are greatly improved.
(2) this utility model is provided with resistance buffer layer between TCO conductive glass layer and CdS film, can be used for reducing
Pin hole effect or weak diode effect, the luminous energy making the capture of CdTe thin film absorbed layer absorb increases, it is thus achieved that more polyelectron-sky
Cave, and make the transmission of these electron-holes be more prone to, and then make solaode can have higher electric current density.
(3) this utility model passes through each layer film of appropriate design and the thickness of metal level, after coordinating the design of its structure, and can
To improve photoelectric transformation efficiency and the stability of battery further, it is allowed to performance and application is further optimized.
(4) this utility model is reasonable in design, cheap for manufacturing cost, is with a wide range of applications, and is especially suitable for extensive
Popularization and application.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Wherein, corresponding entitled of reference:
1-glass substrate, 2-TCO conductive glass layer, 3-resistance buffer layer, 4-CdS thin film, 5-CdTe thin film, 6-ZnTe
Layer, 7-Cu layer, 8-Au layer, 9-copper-gold alloy layer.
Detailed description of the invention
The utility model is described in further detail with embodiment in explanation below in conjunction with the accompanying drawings, and mode of the present utility model includes
But it is not limited only to following example.
Embodiment
As it is shown in figure 1, this utility model provides a kind of translucent thin-film solar cells, it includes being sequentially overlapped
Glass substrate 1, TCO conductive glass layer 2, resistance buffer layer 3, CdS film 4, CdTe thin film 5, ZnTe layer 6, Cu layer 7, Au layer 8,
Copper-gold alloy layer 9.Described CdS film 4 uses immersion method to be coated on resistance buffer layer 3, and thickness is 50～100nm；
Described CdTe thin film 5 uses galvanoplastic to be plated in CdS film 4, and thickness is 200～500nm.CdS film 4 and CdTe is thin
Film 5 forms PN (CdS film 4 is tied for N, and CdTe thin film 5 is tied for P) in the battery.Described ZnTe layer 6 uses RF sputtering method to sink
Amass in CdTe thin film 5；Described Cu layer 7, Au layer 8, copper-gold alloy layer 9 are all transparent, and all use magnetron sputtering method
It is deposited.Above-mentioned ZnTe layer 6, the thickness of Cu layer 7 and Au layer 8 are respectively 20nm, 2nm and 30nm.
This utility model, by improving the structure of thin-film solar cells, is effectively increased the transmitance of light so that battery
Photoelectric transformation efficiency and stability be increased dramatically and strengthen, and reduce the cost of manufacture, therefore, this utility model phase
For prior art, there is substantial feature and progress.
Above-described embodiment is only one of preferred implementation of the present utility model, should not be taken to limit of the present utility model
Protection domain, all in body design thought of the present utility model and the change having no essential meaning made mentally or polishing,
It is solved the technical problem that still consistent with this utility model, all should be included in protection domain of the present utility model it
In.
Claims (6)
1. a translucent film solar battery structure, including glass substrate (1) be superimposed upon on this glass substrate (1)
TCO conductive glass layer (2), it is characterised in that also include the resistance buffer layer (3) being superimposed upon on TCO conductive glass layer (2), adopt
It is coated on this resistance buffer layer (3) and is the CdS film (4) of N type junction structure with immersion method, use galvanoplastic to electroplate at this CdS
The CdTe thin film (5) of p-type structure is gone up and be to thin film (4), uses RF sputtering method to be deposited on the ZnTe layer in this CdTe thin film (5)
(6), use magnetron sputtering method to be deposited on the Cu layer (7) on this ZnTe layer (6), use magnetron sputtering method to be deposited on this Cu layer (7)
On Au layer (8), and same use magnetron sputtering method to be deposited on the copper-gold alloy layer (9) on this Au layer (8).
The translucent film solar battery structure of one the most according to claim 1, it is characterised in that described CdS is thin
The thickness of film (4) is 50～100nm.
The translucent film solar battery structure of one the most according to claim 2, it is characterised in that described CdTe is thin
The thickness of film (5) is 200～500nm.
The translucent film solar battery structure of one the most according to claim 3, it is characterised in that described ZnTe layer
(6) thickness is 20nm.
The translucent film solar battery structure of one the most according to claim 4, it is characterised in that described Cu layer
(7) thickness is 2nm.
The translucent film solar battery structure of one the most according to claim 5, it is characterised in that described Au layer
(8) thickness is 30nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620796548.6U CN205810834U (en) | 2016-07-26 | 2016-07-26 | A kind of translucent film solar battery structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620796548.6U CN205810834U (en) | 2016-07-26 | 2016-07-26 | A kind of translucent film solar battery structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205810834U true CN205810834U (en) | 2016-12-14 |
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ID=57507443
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620796548.6U Expired - Fee Related CN205810834U (en) | 2016-07-26 | 2016-07-26 | A kind of translucent film solar battery structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN205810834U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068788A (en) * | 2016-12-28 | 2017-08-18 | 成都中建材光电材料有限公司 | A kind of translucent thin-film solar cells and preparation method thereof |
-
2016
- 2016-07-26 CN CN201620796548.6U patent/CN205810834U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068788A (en) * | 2016-12-28 | 2017-08-18 | 成都中建材光电材料有限公司 | A kind of translucent thin-film solar cells and preparation method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161214 Termination date: 20190726 |