CN103346173A - Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof - Google Patents
Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof Download PDFInfo
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Abstract
The invention provides a flexible copper indium gallium selenium thin film solar cell module which is composed of a flexible substrate, a double-layer Mo metal back electrode, a copper indium gallium selenium thin film absorbing layer, a CdS buffering layer, an intrinsic ZnO thin film barrier layer and a transparent conductive aluminum-doped ZnO thin film window layer, wherein the flexible substrate, the double-layer Mo metal back electrode, the copper indium gallium selenium thin film absorbing layer, the CdS buffering layer, the intrinsic ZnO thin film barrier layer and the transparent conductive aluminum-doped ZnO thin film window layer sequentially form a laminated structure. In the preparation process of the solar cell module, three carving grooves are respectively formed in the different layer faces in a marking mode. The flexible copper indium gallium selenium thin film solar cell module has the advantages of being suitable for the reel-to-reel process to prepare the flexible copper indium gallium selenium thin film solar cell module of a large area in a large-scale mode, meeting the requirements for voltage and currents of a photovoltaic module in the practical application, and achieving internal series connection of a flexible copper indium gallium selenium thin film solar cell. Moreover, the module is free from the short circuit and large in effective area, improves production efficiency and lowers production cost.
Description
Technical field
The present invention relates to technical field of solar cells, particularly relate to a kind of flexible CIGS thin-film solar cell assembly and preparation method thereof.
Background technology
CIGS thin-film solar cell has high conversion efficiency, anti-irradiation ability is strong, and the is unattenuated feature performance benefit of Denging is the focus of the research of international photovoltaic circle and investment, is one of thin film solar cell of tool development prospect.The CIGS thin film solar cell belongs to second generation photovoltaic cell, be the absorbed layer of battery with polycrystalline CIGS material, since the seventies, obtained development rapidly, the highest laboratory efficient of CIGS thin film solar cell has reached 20.4% at present, approaching with the conversion efficiency of polycrystal silicon cell, is that conversion is most effective in all hull cells.The flexible CIGS hull cell has the high-quality power ratio, be fit to advantages such as volume to volume large-scale production and monolithic be integrated; has flexibility, collapsible and be not afraid of to fall and physical characteristic such as bump in addition; can be used for fields such as space flight and aviation, ground curved-surface building thing and mobile power station, its business development prospect is subjected to extensive concern.
Small size CIGS thin film solar cell adopts Ni/Al gate electrode collected current, and for area battery, in order to eliminate the shading loss that grid line brings, improve the aesthetic measure of photovoltaic cell, adapt in the practical application requirement to supply voltage and electric current, the general mode of line that adopts is divided into the sub-battery of monomer with large tracts of land CIGS hull cell, and the mode by internal series-connection forms the CIGS thin film solar battery module.Glass substrate CIGS film battery assembly adopts the mode of laser scribing to cut back electrode from the back side, form the basis of film battery assembly, but polyimides or flexible metallic material are opaque, laser is difficult to pass flexible base, board, can not adopt the method line of back side cutting back electrode, and adopt the mode of positive machinery line to cut back electrode, mechanical cutter head can be absorbed in flexible base, board inside, produce a large amount of fragments simultaneously and remain in the cutting, cause the sub-battery short circuit of assembly.Therefore need be at the characteristics of flexible base, board CIGS thin film solar battery module, research and development novel flexible CIGS thin film solar cell module and preparation method thereof.
Summary of the invention
The objective of the invention is the problem at above-mentioned existence, a kind of flexible CIGS thin-film solar cell assembly and preparation method thereof is provided.
Technical scheme of the present invention:
A kind of flexible CIGS thin-film solar cell assembly, by flexible base, board, double-deck Mo metal back electrode, the CIGS thin-film absorbed layer, the CdS resilient coating, intrinsic ZnO film barrier layer and electrically conducting transparent are mixed aluminium ZnO film Window layer composition and are formed laminated construction successively, and the thickness of each layer is: ground floor Mo film thickness is 200-300nm in the double-deck Mo metal back electrode, second layer Mo film thickness is 300-1200nm, CIGS thin-film absorbed layer 1-3 μ m, CdS resilient coating 50-100nm, intrinsic ZnO film barrier layer 50-100nm, electrically conducting transparent is mixed aluminium ZnO film Window layer 300-800nm.
A kind of preparation method of described flexible CIGS thin-film solar cell assembly, step is as follows:
1) the flexible base, board ultrasonic cleaning is dried up after, adopt direct current magnetron sputtering process plated metal back electrode, launch laser beam at a distance from back electrode is positive then, laser beam foucing is fallen the back electrode surface, marks article one cutting under inert nitrogen gas or argon shield;
2) be carved with article one cutting the back electrode ultrasonic cleaning, dry up after, adopt multi-source coevaporation method or sputter preformed layer after the selenizing legal system be equipped with the CIGS thin-film absorbed layer, the substrate heating-up temperature is 350-550
oC;
3) then adopt the chemical bath legal system to be equipped with the CdS resilient coating;
4) adopt the high frequency magnetron sputtering method to prepare intrinsic ZnO film barrier layer again, adopt mechanical cutter head to mark the second cutting on article one cutting side then, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry gas air or nitrogen to blow off simultaneously to produce in the scratching process;
5) adopt twin to target direct current magnetron sputtering process deposit transparent conductive film formation Window layer at existing multilayer film and second cutting, adopt mechanical cutter head to mark the 3rd cutting on second cutting next door then, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry gas air or nitrogen to blow off simultaneously to produce in the scratching process.
Described flexible base material is polyimides, stainless steel foil, Mo paper tinsel, Cu paper tinsel, Al paper tinsel or Ti paper tinsel.
The width of described article one cutting is 30-50 μ m, and laser source power is 9W or 25W, and laser beam wavelength is 532nm or 1064nm, and frequency is 14-30kHz, and electric current is 20-28A, and laser scribing speed is 200-300mm/s; The width of second and the 3rd cutting is 50-100 μ m, and mechanical line speed is 150-300mm/s.
Described article one and second, second and the 3rd 's cutting spacing is 50-200 μ m.
Advantage of the present invention: 1) be fit to the volume to volume process scaleization and prepare the large area flexible CIGS thin film solar cell module, satisfy in the practical application the requirement of photovoltaic module voltage and current, enhance productivity simultaneously, reduce production costs; 2) under inert gas shielding, adopt the mode of the positive cutting of laser beam back electrode to scratch article one cutting, inert gas can reduce laser to the damage of substrate, remove the slag in article one cutting simultaneously, guarantee that cutting is scratched fully in the metal back electrode, the insulating properties between back electrode is good; When 3) second and the 3rd cutting were rule, the high pressure dry gas can blow down residue and the fragment in the cutting, cutting width uniformity, and the electrical insulation between the sub-battery of assembly is good.
Description of drawings
Fig. 1 is the structural representation of flexible CIGS thin-film solar cell assembly.
Among the figure: 1. flexible base, board 2. metal back electrodes 3. CIGS thin-film absorbed layers
4.CdS resilient coating 5. intrinsic ZnO film barrier layers 6. transparent conductive film Window layer
7. the 3rd cutting of article one cutting 8. second cuttings 9.
Fig. 2 is the optical microphotograph picture of flexible CIGS thin-film solar cell assembly article one cutting.
Fig. 3 is the optical microphotograph picture of flexible CIGS thin-film solar cell assembly.
Embodiment
The invention provides the preparation method of a kind of low cost, the good flexible CIGS thin-film solar cell assembly of technology succession property, in order further to set forth content of the present invention and characteristics, now describe in detail with embodiment by reference to the accompanying drawings.
Embodiment 1:
A kind of flexible CIGS thin-film solar cell assembly, as shown in Figure 1, by polyimides flexible base, board 1, double-deck Mo metal back electrode 2, CIGS thin-film absorbed layer 3, CdS resilient coating 4, intrinsic ZnO film barrier layer 5 and electrically conducting transparent are mixed aluminium ZnO film Window layer 6 compositions and are formed laminated construction successively, and the thickness of each layer is: the polyimides flexible base, board is 25 μ m, ground floor Mo film thickness is 300nm in the double-deck Mo metal back electrode, second layer Mo film thickness is 600nm, CIGS thin-film absorbed layer 2 μ m, CdS resilient coating 60nm, intrinsic ZnO film barrier layer 80nm, electrically conducting transparent is mixed aluminium ZnO film Window layer 500nm.
The preparation method of described flexible CIGS thin-film solar cell assembly, step is as follows:
1) be after the polyimides flexible base, board ultrasonic cleaning of 25 μ m dries up with thickness, adopt direct current magnetron sputtering process to prepare double-deck Mo back electrode successively, ground floor Mo thin film sputtering air pressure is 2Pa, second layer Mo thin film sputtering air pressure is 0.2Pa, then from the positive laser beam of launching at a distance of back electrode, laser beam foucing is fallen the back electrode surface, marking width under nitrogen protection is article one cutting of 40 μ m, article one, the resistance between the adjacent back electrode in cutting both sides is greater than 40M Ω, laser source power is 9W, and laser beam wavelength is 532nm, and frequency is 18kHz, electric current is 28A, and laser scribing speed is 200mm/s;
2) will be carved with article one cutting the back electrode ultrasonic cleaning, dry up after, adopt the multi-source coevaporation method to prepare the CIGS thin-film absorbed layer, the substrate heating-up temperature is 450
oC;
3) then adopt the chemical bath legal system to be equipped with the CdS resilient coating, bath temperature is 80
oC;
4) adopt the high frequency magnetron sputtering method to prepare intrinsic ZnO film barrier layer again, adopt mechanical cutter head to mark the second cutting with the line speed of 300mm/s in the position of distance article one cutting 100 μ m then, the width of second cutting is 60 μ m, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry air to blow off simultaneously to produce in the scratching process;
5) adopt twin to target direct current magnetron sputtering process deposit transparent conductive film formation Window layer at existing multilayer film and second cutting, adopt mechanical cutter head to mark the 3rd cutting with the line speed of 300mm/s in the position of distance second cutting 150 μ m then, article three, the width of cutting is 70 μ m, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry air to blow off simultaneously to produce in the scratching process.
Fig. 2 is the optical microphotograph picture of flexible CIGS thin-film solar cell assembly article one cutting, among the figure as seen: the edge-smoothing of cutting, degree of depth unanimity, width are even, reduced the space wastage of battery component, realized the front line of flexible substrates back electrode, the reliability of technology height, easy to operate feasible, improved the production efficiency of flexible CIGS thin-film solar cell assembly.
Embodiment 2:
A kind of flexible CIGS thin-film solar cell assembly, as shown in Figure 1, by stainless steel foil flexible base, board 1, double-deck Mo metal back electrode 2, CIGS thin-film absorbed layer 3, CdS resilient coating 4, intrinsic ZnO film barrier layer 5 and electrically conducting transparent are mixed aluminium ZnO film Window layer 6 compositions and are formed laminated construction successively, and the thickness of each layer is: stainless steel foil flexible base, board thickness is 100 μ m, ground floor Mo film thickness is 100nm in the double-deck Mo metal back electrode, second layer Mo film thickness is 900nm, CIGS thin-film absorbed layer 1.5 μ m, CdS resilient coating 80nm, intrinsic ZnO film barrier layer 60nm, electrically conducting transparent is mixed aluminium ZnO film Window layer 350nm.
The preparation method of described flexible CIGS thin-film solar cell assembly, step is as follows:
1) be after the polyimides flexible base, board ultrasonic cleaning of 25 μ m dries up with thickness, adopt direct current magnetron sputtering process to prepare double-deck Mo back electrode successively, ground floor Mo thin film sputtering air pressure is 5Pa, second layer Mo thin film sputtering air pressure is 0.2Pa, then from the positive laser beam of launching at a distance of back electrode, laser beam foucing is fallen the back electrode surface, marking width under nitrogen protection is article one cutting of 35 μ m, article one, the resistance between the adjacent back electrode in cutting both sides is greater than 40M Ω, laser source power is 25W, and laser beam wavelength is 1064nm, and frequency is 30kHz, electric current is 20A, and laser scribing speed is 300mm/s;
2) will be carved with article one cutting the back electrode ultrasonic cleaning, dry up after, adopt the multi-source coevaporation method to prepare the CIGS thin-film absorbed layer, the substrate heating-up temperature is 400
oC;
3) then adopt the chemical bath legal system to be equipped with the CdS resilient coating, bath temperature is 80
oC;
4) adopt the high frequency magnetron sputtering method to prepare intrinsic ZnO film barrier layer again, adopt mechanical cutter head to mark the second cutting with the line speed of 200mm/s in the position of distance article one cutting 50 μ m then, the width of second cutting is 60 μ m, groove depth is to the back electrode surface, the residue and the fragment that adopt the high pressure drying nitrogen to blow off simultaneously to produce in the scratching process;
5) adopt twin to target direct current magnetron sputtering process deposit transparent conductive film formation Window layer at existing multilayer film and second cutting, adopt mechanical cutter head to mark the 3rd cutting with the line speed of 200mm/s in the position of distance second cutting 100 μ m then, article three, the width of cutting is 70 μ m, groove depth is to the back electrode surface, the residue and the fragment that adopt the high pressure drying nitrogen to blow off simultaneously to produce in the scratching process.
Fig. 3 is the optical microphotograph picture of flexible CIGS thin-film solar cell assembly, among the figure as seen: no residue fragment in second and the 3rd cutting, the width basically identical, the degree of depth does not have significant change, the cutting spacing is less, the invalid of assembly is lower, has realized the internal series-connection of flexible CIGS thin-film solar cell.
Above case study on implementation is several implementation method of the present invention, is intended in detail and specifies content of the present invention, can not be interpreted as the restriction of scope of patent protection.Should indicate simultaneously, for the person of ordinary skill of the art, on design of the present invention basis, the various modifications and variations of carrying out are all at the protection range of this patent.
Claims (5)
1. flexible CIGS thin-film solar cell assembly, it is characterized in that: by flexible base, board, double-deck Mo metal back electrode, the CIGS thin-film absorbed layer, the CdS resilient coating, intrinsic ZnO film barrier layer and electrically conducting transparent are mixed aluminium ZnO film Window layer composition and are formed laminated construction successively, and the thickness of each layer is: ground floor Mo film thickness is 200-300nm in the double-deck Mo metal back electrode, second layer Mo film thickness is 300-1200nm, CIGS thin-film absorbed layer 1-3 μ m, CdS resilient coating 50-100nm, intrinsic ZnO film barrier layer 50-100nm, electrically conducting transparent is mixed aluminium ZnO film Window layer 300-800nm.
2. preparation method of flexible CIGS thin-film solar cell assembly according to claim 1 is characterized in that step is as follows:
1) the flexible base, board ultrasonic cleaning is dried up after, adopt direct current magnetron sputtering process plated metal back electrode, launch laser beam at a distance from back electrode is positive then, laser beam foucing is fallen the back electrode surface, marks article one cutting under inert nitrogen gas or argon shield;
2) be carved with article one cutting the back electrode ultrasonic cleaning, dry up after, adopt multi-source coevaporation method or sputter preformed layer after the selenizing legal system be equipped with the CIGS thin-film absorbed layer, the substrate heating-up temperature is 350-550
oC;
3) then adopt the chemical bath legal system to be equipped with the CdS resilient coating;
4) adopt the high frequency magnetron sputtering method to prepare intrinsic ZnO film barrier layer again, adopt mechanical cutter head to mark the second cutting on article one cutting side then, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry gas air or nitrogen to blow off simultaneously to produce in the scratching process;
5) adopt twin to target direct current magnetron sputtering process deposit transparent conductive film formation Window layer at existing multilayer film and second cutting, adopt mechanical cutter head to mark the 3rd cutting on second cutting next door then, groove depth is to the back electrode surface, the residue and the fragment that adopt high pressure dry gas air or nitrogen to blow off simultaneously to produce in the scratching process.
3. according to the preparation method of the described flexible CIGS thin-film solar cell assembly of claim 2, it is characterized in that: described flexible base material is polyimides, stainless steel foil, Mo paper tinsel, Cu paper tinsel, Al paper tinsel or Ti paper tinsel.
4. according to the preparation method of the described flexible CIGS thin-film solar cell assembly of claim 2, it is characterized in that: the width of described article one cutting is 30-50 μ m, laser source power is 9W or 25W, laser beam wavelength is 532nm or 1064nm, frequency is 14-30kHz, electric current is 20-28A, and laser scribing speed is 200-300mm/s; The width of second and the 3rd cutting is 50-100 μ m, and mechanical line speed is 150-300mm/s.
5. according to the preparation method of the described flexible CIGS thin-film solar cell assembly of claim 2, it is characterized in that: described article one and second, second and the 3rd 's cutting spacing is 50-200 μ m.
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| CN104576823A (en) * | 2013-10-25 | 2015-04-29 | 台积太阳能股份有限公司 | Transparent cover for solar cells and modules |
| CN105449037A (en) * | 2015-12-08 | 2016-03-30 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible thin-film solar cell module |
| CN105552164A (en) * | 2015-12-08 | 2016-05-04 | 中国电子科技集团公司第十八研究所 | Internal pole connection method of flexible copper indium gallium selenium film solar cell |
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| CN110534610A (en) * | 2018-05-24 | 2019-12-03 | 北京铂阳顶荣光伏科技有限公司 | Hull cell preparation facilities and preparation method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN102231411A (en) * | 2011-07-11 | 2011-11-02 | 中国科学院深圳先进技术研究院 | Method for manufacturing self aligned electrode on surface of thin-film type solar battery |
| CN102388465A (en) * | 2009-09-29 | 2012-03-21 | 京瓷株式会社 | Solar cell element and solar cell module |
| CN102791419A (en) * | 2009-11-30 | 2012-11-21 | Esi-派罗弗特尼克斯雷射股份有限公司 | Method and apparatus for scribing a line in a thin film using a series of laser pulses |
| CN103094408A (en) * | 2011-10-31 | 2013-05-08 | 香港中文大学 | Solar cell and method for manufacturing solar cell and solar cell patterns |
-
2013
- 2013-06-18 CN CN2013102410449A patent/CN103346173A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102388465A (en) * | 2009-09-29 | 2012-03-21 | 京瓷株式会社 | Solar cell element and solar cell module |
| CN102791419A (en) * | 2009-11-30 | 2012-11-21 | Esi-派罗弗特尼克斯雷射股份有限公司 | Method and apparatus for scribing a line in a thin film using a series of laser pulses |
| CN101820008A (en) * | 2009-12-15 | 2010-09-01 | 江苏华创光电科技有限公司 | Monocrystalline film solar cell and preparation method thereof |
| CN102231411A (en) * | 2011-07-11 | 2011-11-02 | 中国科学院深圳先进技术研究院 | Method for manufacturing self aligned electrode on surface of thin-film type solar battery |
| CN103094408A (en) * | 2011-10-31 | 2013-05-08 | 香港中文大学 | Solar cell and method for manufacturing solar cell and solar cell patterns |
Cited By (16)
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|---|---|---|---|---|
| CN105814696A (en) * | 2013-10-10 | 2016-07-27 | Lg伊诺特有限公司 | Solar battery |
| CN105814696B (en) * | 2013-10-10 | 2018-08-24 | Lg伊诺特有限公司 | Solar cell |
| CN104576823A (en) * | 2013-10-25 | 2015-04-29 | 台积太阳能股份有限公司 | Transparent cover for solar cells and modules |
| CN104517804B (en) * | 2014-07-29 | 2017-10-24 | 上海华虹宏力半导体制造有限公司 | The decyclization method of too bulging reduction process |
| CN106024969A (en) * | 2015-11-27 | 2016-10-12 | 上海空间电源研究所 | Flexible substrate silicon-based thin-film solar cell periphery laser insulation preparation method |
| CN105449037A (en) * | 2015-12-08 | 2016-03-30 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible thin-film solar cell module |
| CN105552164A (en) * | 2015-12-08 | 2016-05-04 | 中国电子科技集团公司第十八研究所 | Internal pole connection method of flexible copper indium gallium selenium film solar cell |
| CN106898665A (en) * | 2017-02-09 | 2017-06-27 | 北京四方创能光电科技有限公司 | A kind of tandem flexible thin-film solar cell component and preparation method thereof |
| CN108598193A (en) * | 2018-05-24 | 2018-09-28 | 圣晖莱南京能源科技有限公司 | A kind of flexible CIGS solar battery component |
| CN110534610A (en) * | 2018-05-24 | 2019-12-03 | 北京铂阳顶荣光伏科技有限公司 | Hull cell preparation facilities and preparation method |
| WO2019232904A1 (en) * | 2018-06-08 | 2019-12-12 | 汉能新材料科技有限公司 | Solar cell and manufacturing method thereof |
| CN110277463A (en) * | 2019-07-10 | 2019-09-24 | 中威新能源(成都)有限公司 | A kind of solar battery structure production method |
| CN110277463B (en) * | 2019-07-10 | 2024-03-15 | 通威太阳能（成都）有限公司 | Solar cell structure manufacturing method |
| CN112928175A (en) * | 2019-12-06 | 2021-06-08 | 重庆神华薄膜太阳能科技有限公司 | Preparation method of solar cell module |
| CN111048603A (en) * | 2019-12-16 | 2020-04-21 | 凯盛光伏材料有限公司 | Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof |
| CN111048603B (en) * | 2019-12-16 | 2022-05-17 | 凯盛光伏材料有限公司 | Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof |
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Application publication date: 20131009 |