CN103094408A - Solar cell and method for manufacturing solar cell and solar cell patterns - Google Patents
Solar cell and method for manufacturing solar cell and solar cell patterns Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims abstract description 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 88
- 239000011787 zinc oxide Substances 0.000 claims description 44
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 41
- 229910052750 molybdenum Inorganic materials 0.000 claims description 39
- 239000011733 molybdenum Substances 0.000 claims description 39
- 210000001142 back Anatomy 0.000 claims description 35
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000006096 absorbing agent Substances 0.000 claims description 14
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
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- 238000010297 mechanical methods and process Methods 0.000 description 3
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- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 2
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a back-contact type thin-film solar cell. The method for manufacturing the back-contact type thin-film solar cell includes the following steps that a substrate is provided, a back electrode layer is formed on the substrate and by using lasers, incidence is carried out on one side of the substrate so that scribing of the back electrode layer is carried out. The invention further discloses a back-contact type thin-film solar cell manufactured by adopting the method and thin-film solar cell patterns.
Description
The field
The application relates to the materialogy field, relates more specifically to solar cell and manufacture method thereof.
Background
Increasing sharply of energy resource consumption raises energy consumption to unprecedented level.Be accompanied by less than soaring energy consumption, people are also grown to even greater heights for the concern of alternative energy source, for example photovoltaic (PV) device.For a long time, solar cell is by making with silicon chip technology.Thin-film solar cells substitutes expensive silicon with cheap float glass substrate and thin layer makes up as functional layer, and this makes into the product cost and declines to a great extent, and therefore has the potentiality with the conventional energy resource competition on market.At present, thin-film solar cells is made with laser widely, and it provides the source for laser scribing with respect to the lasting demand of proprietary technology and technique.
General introduction
The application provides the method for making solar cell on the one hand, and comprising: (1) provides substrate; (2) form dorsum electrode layer in described substrate; And (3) use laser in described substrate one side incident, described dorsum electrode layer to be rule.
The application provides the back-contact thin-film solar cells on the other hand, substrate, at the dorsum electrode layer that forms in described substrate and the pattern that forms by the laser scribing in described substrate one side incident on described dorsum electrode layer.
The application's another aspect also provides back-contact thin-film solar cells pattern, and the circle that this pattern is 40-100 μ m by continuous diameter consists of, and there is lap in two adjacent circles, and the Breadth Maximum of described lap is 1/3 of described circular radius.
Description of drawings
Fig. 1 is illustrated in the principle that the laser of substrate of glass one side incident is rule.
Fig. 2 is illustrated in the principle that the laser of molybdenum thin layer one side incident is rule.
Fig. 3 represents the structure of the thin-film solar cells in the application's a execution mode.Pattern 1 (P1) wherein: sputter molybdenum thin layer on substrate of glass, then degrade patterning with nanosecond laser on the molybdenum thin layer; Pattern 2 (P2): rule by machinery and separate cadmium sulfide/native oxide zinc layer and Copper Indium Gallium Selenide layer (or copper indium selenium layer) formation; Pattern 3 (P3): rule by machinery cadmium sulfide/zinc oxide film (zinc oxide comprises conduction Al-Doped ZnO and native oxide zinc) and Copper Indium Gallium Selenide layer (or copper indium selenium layer) are carved downwards together to the surface of molybdenum thin layer.
Fig. 4 represents the cross section of the substrate of glass that applies with molybdenum in the application's a execution mode.
Fig. 5 represents the pattern of the laser spot in the application's a execution mode.
Fig. 6 represents the vacuum pump that is used for line in the application's a execution mode.
Wherein, 1, substrate; 2, thin metal layer; 3, cigs layer; 4, CdS/ZnO layer; 5, ZnO:Al layer; 6, P1 pattern; 7, P2 pattern; 8, P3 pattern; 9, useless region; 10, useful effect zone; 11, laser; 12, fusing and evaporation; 13, fragment; 14, lasing light emitter; 15, transparency window; 16, vacuum chamber; 17, battery sample; 18, sample stage; 19, pump; 20, lug boss.
Describe in detail
Below each execution mode in connection with accompanying drawing to the interconnective structure of solar cell in each execution mode of the application with and the method used be described in detail.
The application provides the method for making the back-contact thin-film solar cells on the one hand, and comprising: (1) provides substrate; (2) form dorsum electrode layer in described substrate; And (3) use laser in described substrate one side incident, described dorsum electrode layer to be rule.
In some execution mode of the application, said method comprising the steps of: (1) provides substrate; (2) form dorsum electrode layer in described substrate; (3) use laser in described substrate one side incident, described dorsum electrode layer to be rule; (4) form absorber layers on described dorsum electrode layer; (5) form Window layer on described absorber layers; And (6) form on described Window layer before electrode layer.
In some execution mode of the application, use in a vacuum laser to rule.
In some execution mode of the application, carry out laser scribing after after described step (2), described substrate and dorsum electrode layer being placed in vacuum cavity.
In some execution mode of the application, described dorsum electrode layer is thin metal layer, described absorber layers is CIGS (Copper Indium Gallium Selenide) layer, and described Window layer is CdS/ZnO (cadmium sulfide/zinc oxide) layer, and described front electrode layer is ZnO:Al (zinc oxide of aluminium doping) layer.
In some execution mode of the application, described metal is selected from molybdenum, gold, silver, copper, aluminium.
In some execution mode of the application, described metal is molybdenum.
In some execution mode of the application, the spot diameter of described laser is 40-100 μ m.
In some execution mode of the application, adopt the distance between out of focus technology adjusting lasing light emitter and thin layer.
In some execution mode of the application, regulate the distance between lasing light emitter and thin layer in the step of carrying out laser scribing, making the diameter of luminous point on described thin layer of described laser is 40-100 μ m, is the pattern of 40-100 μ m in order to form width on described thin layer.
In some execution mode of the application, in the step of carrying out laser scribing, regulate the energy of laser spot to removing the required least energy of described dorsum electrode layer fully.
In some execution mode of the application, described least energy is 3-4W.
In some execution mode of the application, there is lap in continuous two luminous points formed pattern on dorsum electrode layer of described laser, and the Breadth Maximum of described lap is that spot radius is to 1/3 of spot radius.
In some execution mode of the application, be wherein 5 * 10 in vacuum degree
-7-1 * 10
-3In the vacuum chamber of Torr, sputter molybdenum thin layer as dorsum electrode layer, then is fixed on this substrate of glass on the sample stage of vacuum chamber on the substrate of glass that provides; Distance between adjusting lasing light emitter and described molybdenum thin layer is so that the diameter of laser spot on described molybdenum thin layer is 40-100 μ m; Regulate the laser spot energy to removing the required least energy of institute's molybdenum thin layer fully; With laser from substrate of glass one side incident and the molybdenum thin layer is rule, make on the molybdenum thin layer and have lap between two continuous laser spots in formed pattern, and the Breadth Maximum of lap is 1/3 of spot radius, degrades to form pattern 1 (P1).
In some execution mode of the application, after forming pattern 1, in succession electroplate successively on the molybdenum thin layer as the cigs layer of absorber layers with as the CdS/ZnO layer of Window layer, then use mechanical method of scoring that cigs layer and CdS/ZnO layer are rule together, form pattern 2 (P2); After forming pattern 2, electroplate the ZnO:Al layer as front electrode layer on the CdS/ZnO layer, then use the machinery line that ZnO:Al layer, CdS/ZnO layer and cigs layer are rule together, form pattern 3 (P3).
The application provides the back-contact thin-film solar cells on the other hand, and it comprises substrate, at the dorsum electrode layer that forms in described substrate and the pattern that forms by the laser scribing in described substrate one side incident on described dorsum electrode layer.
In some execution mode of the application, described solar cell also comprises: absorber layers, and it forms on described dorsum electrode layer; Window layer, it forms on described absorber layers; Front electrode layer, it forms on described Window layer.
In some execution mode of the application, the pattern on described dorsum electrode layer is that laser is rule in a vacuum and formed.
In some execution mode of the application, the width of described pattern is 40-100 μ m.
In some execution mode of the application, the lug boss height at the marking groove edge of described pattern is less than 0.2 μ m.
In some execution mode of the application, the width of laser scribing and the formed useless region of machinery line is equal to or less than 300 μ m.
In some execution mode of the application, there is lap in continuous two formed patterns of luminous point of described laser, and the Breadth Maximum of described lap is that spot radius is to 1/3 of spot radius.
In some execution mode of the application, described substrate is substrate of glass, the dorsum electrode layer of sputter is the molybdenum thin layer on described substrate of glass, form pattern 1 (P1) by ruling on described molybdenum thin layer at the laser of described substrate one side incident, the width of described pattern 1 is 40-100 μ m, there is lap in continuous two formed patterns of luminous point of described laser, and the Breadth Maximum of described lap is 1/3 of spot radius.
In some execution mode of the application, the pattern on described dorsum electrode layer is by forming in the laser scribing of described substrate one side incident, and the pattern on other thin layer is by the machinery formation of ruling.
In some execution mode of the application, described solar cell comprises substrate of glass and the molybdenum thin layer as dorsum electrode layer of sputter on described substrate of glass, form pattern 1 (P1) by ruling on described molybdenum thin layer at the laser of described substrate one side incident, the width of described pattern is 40-100 μ m, there is lap in continuous two formed patterns of luminous point of described laser, and the Breadth Maximum of described lap is 1/3 of spot radius; Also be formed with successively cigs layer as absorber layers on described molybdenum thin layer, as the CdS/ZnO layer of Window layer with as the ZnO:Al layer of front electrode layer, wherein CdS/ZnO layer and cigs layer are rule by machinery together and are formed pattern 2 (P2), and ZnO:Al layer, CdS/ZnO layer and cigs layer are rule by machinery together and formed pattern 3 (P3).
The application's another aspect provides the thin-film solar cells pattern, and the circle that this pattern is 40-100 μ m by continuous diameter consists of, and there is lap in two adjacent circles, and the Breadth Maximum of described lap is that the radius of described circle is to 1/3 of radius.
Sputter molybdenum thin layer as dorsum electrode layer, then adopts laser scribing to form pattern on this thin layer on substrate of glass.
In this embodiment, the inventor has adopted two kinds of methods to rule.First method is that laser is rule in substrate of glass one side incident, and second method is that laser is rule in thin layer one side incident.
The resulting difference as a result of these two kinds of methods is very large.The line of glass-based bottom side is than thin layer side line better effects if.In fact, these two kinds of scribble methods have different principles, describe below in conjunction with Fig. 1 and Fig. 2.
Laser is in substrate of glass one side incident line (adopting the nanosecond pulse irradiation) experience three steps (referring to Fig. 1).In first step, the optical lasers pulse energy is absorbed at the interface substrate of glass and thin layer, has caused like this temperature sharply to raise.In second step, the rising of temperature causes the localized heat strain and finally causes thin layer to melt and evaporate.In third step, evaporation fully produces breaks, and this thin layer just can brokenly also come off subsequently.After laser scribing, found some molybdenum fragments that are scattered on thin layer, this has proved above-mentioned three steps.
Laser is in one side incident when line (referring to Fig. 2) of molybdenum thin layer, and the laser beam direct irradiation is on the surface of thin layer, and only can be with the part removal of thin layer from its top to substrate of glass of part by fusing and evaporation.Therefore, do not observe fragment on thin layer.
The base side line has advantages of at least a as follows than the line of thin layer side.The first, than thin layer side line, by the direct thin layer that plates of evaporation in the interface between thin layer and substrate, in the substrate in marking groove, institute's residue that produces is less, thereby the residue of having avoided producing causes the energy loss of shunting and causing between battery.The second, because it is lower to remove the threshold value of film in the base side method of scoring, thus can earlier control laser energy, thus the damage of avoiding substrate to cause due to the irradiation light of hyperabsorption.The 3rd, as fired basis bottom side method of scoring, the thin layer dispersion of fragment that produces drops on thin layer; And use thin layer side method of scoring, the thin layer fragment that produces will be stayed in substrate.Cause short circuit thereby cause damage if fragment residue embedding substrate surface will make rough surface, and it is very difficult removing these residues.Base side line rule has been avoided such defective.
In other embodiment of present embodiment, other metal of gold, silver, copper, aluminium has also been carried out corresponding experiment, result shows the effect that can reach same with the molybdenum thin layer.
(referring to Fig. 3) in the present embodiment, sputter molybdenum thin layer as dorsum electrode layer, then uses nanosecond laser to shine line in substrate one side on substrate of glass, degrades patterning on the molybdenum thin layer, forms pattern 1 (P1).
After forming P1, adopt the method for thermal evaporation or sputtering and selenization technique to form CIGS (Cu (InGa) Se on the molybdenum thin layer
2, i.e. Copper Indium Gallium Selenide) layer (or the CIS layer, comprise Cu, In, Se) as absorber layers.Then form the CdS layer at the upper chemical solution method that adopts of cigs layer (or CIS layer), then adopt sputtering method to form the ZnO layer on the CdS layer, formed CdS/ZnO (cadmium sulfide/native oxide zinc) layer is as Window layer.Then use mechanical method of scoring that CdS/ZnO layer and cigs layer (or CIS layer) are rule together, form pattern 2 (P2).
After forming P2, electroplate the ZnO:Al (zinc oxide of aluminium doping on the CdS/ZnO layer, wherein the ratio of Al is about 2%) layer is as front electrode layer, and then the line of use machinery is rule ZnO:Al layer, CdS/ZnO layer and cigs layer (or CIS layer) together, forms pattern 3 (P3).
In the present embodiment, the thickness of formed Mo layer, cigs layer, CdS layer, ZnO layer, ZnO:Al layer is respectively 1 μ m, 2 μ m, 50-100nm, 50-100nm, 600nm.
Present embodiment is constructed the P1 layer with laser scribing.Usually, the current resistor of P1 layer should be high so that the shunt current between the reduction battery as much as possible.And P1-P3 formed zone will cause damage to photovoltaic generation, and this zone just is called " useless region (dead area) ", and the zone beyond line is called " useful effect zone (active area) " (referring to Fig. 3).Therefore, should reduce the width of laser scribing to reduce the area of useless region; Simultaneously, be connected to each other between line and will battery pack be produced loss.Therefore, line itself should be narrow as much as possible in theory.But in the middle of reality, line also must keep certain width so that each pattern can separate fully.In each embodiment of present embodiment, adopt the metal of molybdenum, gold, silver, copper, aluminium also to carry out corresponding experiment.Its experimental result maximum likelihood preferably is to be distributed in 70 about μ m, and not lower than 40 μ m, rare occasion is greater than 100 μ m.Therefore, the scope of determining the formed pattern width of thin metal layer (width of P1) is 40-100 μ m.
It is pointed out that in each execution mode of this paper, the width of pattern refers to the width of the widest part in the formed pattern of laser spot.
The inventor finds that also the pattern width of ruling depends primarily on the size of laser spot (diameter) but not the energy density of laser spot.Therefore correspondingly, the diameter of the luminous point of laser on described thin layer is 40-100 μ m.
For the diameter that makes laser spot be required line width (as mentioned above, 40-100 μ m), present embodiment adopts out of focus technology (out-focus technique), that is the distance of, regulating between lasing light emitter and thin layer (object) departs from the laser focal plane so that the diameter of luminous point on this thin layer reaches above-mentioned width.
Complete P1 laser ablation and P2, after P3 machinery line, the width of total useless region can be controlled in 300 μ m, and between two groups of adjacent etched line, all the other zones are the useful effect zone.
Execution mode 4
Known edge in marking groove will form respectively lug boss (referring to Fig. 4).These lug bosses cause shunting and the short circuit of the part on upper strata higher than the edge.These lug bosses also are subject to mainly from being heated and the driving of the reverse momentum of the plume that expands, and this makes and melts both sides ejection in opposite directions and solidify in edge.
The inventor of this paper finds, the height of lug boss is caused forming by intensity gradient, thus the laser spot energy density too high be disadvantageous.So in manufacture process, also should be optimized energy density.
In order effectively to reduce the laser intensity gradient, in the present embodiment energy adjustment to the threshold value of laser spot (is removed the required least energy of metal level fully, be 3～4W), so just can will cause the height of the lug boss of the local marking groove surrounding edge of shunting to be reduced to less than 0.2 μ m significantly.
The inventor has studied the form of line, that is, with which kind of pattern line better effects if, and find by after the laser spot propagation that produced heat will increase the height of lug boss and original laser spot metal is on every side come off.Therefore, should make a little with dot spacing from maximization, not have the thin metal layer that is connected but also will guarantee simultaneously to rule between rear formed each battery.Present embodiment has been studied the best pattern (referring to Fig. 5) that is used for laser spot.
In each embodiment of present embodiment, adopt respectively 1.7 times of spot radius, 1.5 times of spot radius, 1.3 times of spot radius, spot radius, spot radius 2/3, spot radius 1/2, spot radius 1/3,1/5 Breadth Maximum as the lap between two continuous laser luminous points in line of spot radius.Experiment shows, at the Breadth Maximum of lap when spot radius is to 1/3 the scope of spot radius, all can make have between adjacent spot enough overlapping to guarantee electrical insulation after etching, make simultaneously a little and dot spacing from maximization, so also exceed the waste laser energy.
Execution mode 6
Use the device of inventor's design, can carry out in a vacuum the laser scribing of solar cell.Make the vacuum degree of vacuum chamber reach 5 * 10 with pump
-7-1 * 10
-3Torr, solar cell that will be to be rule in vacuum chamber is fixed on the sample stage of adjustable position.
The device that present embodiment is used comprises nanosecond laser source, vacuum chamber and pump, and this pump is connected and is used to vacuum chamber and vacuumizes.One side of described vacuum chamber is provided with transparency window, and the inside of vacuum chamber is provided with sample stage, and sample stage is connected with the inwall of vacuum chamber by transfer arm.Lasing light emitter is aimed at the sample stage forward by transparency window.
Arrive 5 * 10 in vacuum degree
-7-1 * 10
-3Carry out the laser scribing operation in the vacuum chamber of Torr, solar panel to be rule is fixed on sample stage, distance between adjusting lasing light emitter and thin layer is regulated the laser spot energy to threshold value (removing the required least energy of metal level fully) so that the diameter of laser spot on this thin layer is 40-100 μ m.After completing above-mentioned parameter and setting, open lasing light emitter, make laser pass the transparency window (watch window) of vacuum chamber, and regulate transfer arm solar panel is moved according to predetermined pattern trace, and then complete laser scribing.
Carrying out in a vacuum laser scribing has advantages of at least a as follows.The first, therefore because other preparation technology of thin-film solar cells carries out in high vacuum, the laser scribing chamber can be incorporated in preparation system, can avoid like this solar cell owing to being exposed in air and contaminated.The second, when all preparation process carry out in a vacuum, do not need the Halfway Stopping vacuum to take out for the battery sample of laser scribing and again with system's vacuum again.Therefore, can significantly improve the productivity ratio of thin-film solar cells, the energy loss that reduces simultaneously the transfer process in the battery manufacture process and caused by shunting.The 3rd, if carry out in a vacuum the glass side line, as implement as described in mode 1, pressure differential that molybdenum steam at place, vacuum environment median surface produces is much larger than producing in atmosphere, result is that such pressure official post steam has formed strong jet-stream wind so that the molybdenum residue that is carried in the P1 pattern breaks away from, thereby has therefore improved the shunting of the resistance minimizing solar cell of P1.In the preparation of thin-film solar cells before the application, the resistance of P1 only reaches tens of M Ω, and it is still not high enough and will significantly reduce the efficient of battery pack.The method of present embodiment can make the resistance of P1 reach 200M Ω or higher.The 4th, pressure differential has reduced is evaporating the necessary laser energy of molybdenum at the interface, has reduced like this possibility of damaging substrate of glass.
Execution mode 7
In this embodiment, whole manufacture processes of back-contact thin-film solar cells are 9 * 10 in vacuum degree
-7Carry out in the vacuum chamber of Torr.
Sputter molybdenum thin layer as dorsum electrode layer, then is fixed on this substrate of glass on the sample stage of vacuum chamber on substrate of glass, makes substrate of glass one side towards transparency window and lasing light emitter.Distance between adjusting lasing light emitter and molybdenum thin layer is regulated the laser spot energy to removing the required least energy 3.5W of molybdenum thin layer fully so that the diameter of laser spot on described molybdenum thin layer is 50 μ m.Open lasing light emitter, laser is from substrate of glass one side incident and the molybdenum thin layer is rule, regulate the frequency of laser pulse and the translational speed of transfer arm, make in the molybdenum thin layer and have lap between two continuous laser spots in line, and the Breadth Maximum of lap is 1/3 of spot radius.Like this, line forms pattern 1 (P1) on the molybdenum thin layer.
After forming P1, in succession electroplate successively Copper Indium Gallium Selenide (CIGS, i.e. Cu (InGa) Se on the molybdenum thin layer
2) layer (as absorber layers) and cadmium sulfide/zinc oxide (CdS/ZnO) layer (as Window layer), then use mechanical method of scoring to rule on CdS/ZnO layer and cigs layer, form pattern 2 (P2).
After forming P2, then zinc oxide (ZnO:Al) layer (as front electrode layer) of Electroplating Aluminum doping on the CdS/ZnO layer uses the machinery line that ZnO:Al layer, CdS/ZnO layer and cigs layer are rule together, forms pattern 3 (P3).
The thickness of formed Mo layer, cigs layer, CdS layer, ZnO layer, ZnO:Al layer is respectively 1 μ m, 2 μ m, 50nm, 50nm, 600nm.The height of the lug boss of marking groove surrounding edge is 0.1 μ m.The width of total useless region is 300 μ m.
Completed the manufacturing of back contact solar battery after formation P3, then battery can have been shifted out from vacuum chamber.
In the present embodiment, adopting respectively gold, silver, copper, aluminium deposit thickness on substrate of glass is the metallic film of 1 μ m, then adopt laser scribing, the condition of line and above-mentioned execution mode identical, wherein spot diameter is about 50 μ m, the laser spot energy is 3W, and the Breadth Maximum of the lap of adjacent two luminous points is 1/3 of spot radius, and identical line speed; The width of the line pattern of gained is 50-70 μ m, and the lug boss height at marking groove edge is less than 0.2 μ m.
Above experimental data shows, adopts ruling as the common metal of back electrode material or functional material layer in the preparation solar cell of other, can access the experiment effect identical with molybdenum.
In order to improve the Voltage-output of photovoltaic device, the solar battery group of battery and above-mentioned execution mode is cascaded.In film photovoltaic cell, the battery monomer integrated circuit enters battery pack by line.
Above execution mode or embodiment limit the present invention; those skilled in the art can make any change and modification to above-mentioned execution mode or embodiment within the scope of the invention under purport of the present invention, these changes and modification are in protection scope of the present invention.
Those skilled in the art can be applied to the technical characterictic in above-mentioned embodiment or embodiment in other one or more execution modes or embodiment to form improved technical scheme; perhaps above-mentioned a plurality of execution modes or embodiment are reconfigured to form improved technical scheme, these improved technical schemes are also in protection range of the present invention.
Claims (16)
1. make the method for back-contact thin-film solar cells, comprising:
(1) provide substrate;
(2) form dorsum electrode layer in described substrate; And
(3) use laser in described substrate one side incident, described dorsum electrode layer to be rule.
2. method according to claim 1, wherein said method is further comprising the steps of:
(4) form absorber layers on described dorsum electrode layer;
(5) form Window layer on described absorber layers; And
(6) form on described Window layer before electrode layer.
3. method according to claim 1 and 2, wherein use laser to rule in a vacuum; Preferably, carry out laser scribing after after described step (2), described substrate and dorsum electrode layer being placed in vacuum cavity.
4. the described method of arbitrary claim according to claim 1-3, wherein said dorsum electrode layer is thin metal layer, described absorber layers is CIGS (Copper Indium Gallium Selenide) layer, described Window layer is CdS/ZnO (cadmium sulfide/zinc oxide) layer, and described front electrode layer is ZnO:Al (zinc oxide of aluminium doping) layer; More preferably, described metal is selected from molybdenum, gold, silver, copper, aluminium; More preferably, described metal is molybdenum.
5. the described method of arbitrary claim according to claim 1-4, the spot diameter of wherein said laser is 40-100 μ m.
6. the described method of arbitrary claim according to claim 1-5, wherein regulate the distance between lasing light emitter and thin layer in the step of carrying out laser scribing, making the diameter of luminous point on described thin layer of described laser is 40-100 μ m, is the pattern of 40-100 μ m in order to form width on described thin layer; Preferably, employing out of focus technology is regulated the distance between lasing light emitter and thin layer.
7. the described method of arbitrary claim according to claim 1-6, wherein in the step of carrying out laser scribing, regulate the energy of laser spot to removing the required least energy of described dorsum electrode layer fully, and more preferably described least energy is 3-4W.
8. the described method of arbitrary claim according to claim 1-7, there is lap in continuous two luminous points formed pattern on dorsum electrode layer of wherein said laser, and the Breadth Maximum of described lap is that spot radius is to 1/3 of spot radius.
9. the back-contact thin-film solar cells, comprise substrate, pass through the pattern in the laser scribing formation of described substrate one side incident at the dorsum electrode layer that forms in described substrate and on described dorsum electrode layer.
10. solar cell according to claim 9, wherein said solar cell also comprises:
Absorber layers, it forms on described dorsum electrode layer;
Window layer, it forms on described absorber layers; And
Front electrode layer, it forms on described Window layer.
11. according to claim 9 or 10 described solar cells, the pattern on wherein said dorsum electrode layer are laser rules in a vacuum and forms.
12. the described solar cell of arbitrary claim according to claim 9-11, the width of wherein said pattern are 40-100 μ m.
13. the described solar cell of arbitrary claim according to claim 9-12, the lug boss height at the marking groove edge of wherein said pattern is less than 0.2 μ m.
14. the described solar cell of arbitrary claim according to claim 9-13, wherein the width of laser scribing and the formed useless region of machinery line is equal to or less than 300 μ m.
15. the described solar cell of arbitrary claim according to claim 9-14, there is lap in continuous two formed patterns of luminous point of wherein said laser, and the Breadth Maximum of described lap is that spot radius is to 1/3 of spot radius.
16. the thin-film solar cells pattern, its circle that is 40-100 μ m by continuous diameter consists of, and there is lap in two adjacent circles, and the Breadth Maximum of described lap is that the radius of described circle is to 1/3 of radius.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346173A (en) * | 2013-06-18 | 2013-10-09 | 南开大学 | Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof |
| CN106258012A (en) * | 2014-01-31 | 2016-12-28 | 弗里索姆股份公司 | The method of the thin film through hole section in photovoltaic device |
| CN113113503A (en) * | 2019-12-24 | 2021-07-13 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin-film solar cell module and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101980377A (en) * | 2010-09-09 | 2011-02-23 | 中国科学院深圳先进技术研究院 | Method for preparing copper indium gallium selenide thin film battery |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101980377A (en) * | 2010-09-09 | 2011-02-23 | 中国科学院深圳先进技术研究院 | Method for preparing copper indium gallium selenide thin film battery |
Non-Patent Citations (3)
| Title |
|---|
| A.D.COMPAAN .ET AL: "Laser scribing of polycrystalline thin films", 《OPTICS AND LASERS IN ENGINEERING》, 1 September 2000 (2000-09-01) * |
| J. BOVATSEK .ET AL: "Thin film removal mechanism in ns-laser processing of photovolatic material", 《THIN SOLID FILMS》, 29 October 2009 (2009-10-29) * |
| STEFAN HAAS .ET AL: "High Speed Laser Processing For Monolithical Series Connection of Silicon Thin-film Modules", 《RESEARCH AND APPLICATIONS》, 19 November 2007 (2007-11-19) * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346173A (en) * | 2013-06-18 | 2013-10-09 | 南开大学 | Flexible copper indium gallium selenium thin film solar cell module and preparation method thereof |
| CN106258012A (en) * | 2014-01-31 | 2016-12-28 | 弗里索姆股份公司 | The method of the thin film through hole section in photovoltaic device |
| CN106258012B (en) * | 2014-01-31 | 2018-07-17 | 弗里索姆股份公司 | Method for the film through hole section in photovoltaic device |
| CN113113503A (en) * | 2019-12-24 | 2021-07-13 | 中国建材国际工程集团有限公司 | Copper indium gallium selenide thin-film solar cell module and preparation method thereof |
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