CN111048603A - Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof - Google Patents
Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 46
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims description 12
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- 238000000151 deposition Methods 0.000 claims description 38
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- 229910052751 metal Inorganic materials 0.000 claims description 17
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- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010931 gold Substances 0.000 claims description 3
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- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 7
- 238000002834 transmittance Methods 0.000 abstract description 7
- 239000002131 composite material Substances 0.000 abstract description 5
- 239000005357 flat glass Substances 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 2
- 230000008859 change Effects 0.000 description 5
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 4
- 230000008033 biological extinction Effects 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 238000010549 co-Evaporation Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a colorful CIGS thin-film solar cell, which comprises a glass substrate, wherein a barrier layer, a back electrode layer, a CIGS absorption layer, a buffer layer and a transparent conductive film layer are sequentially laminated on the top surface of the glass substrate from bottom to top; sequentially preparing each film layer by a conventional sputtering process to obtain the colorful copper indium gallium selenide thin-film solar cell; the transparent conductive film layer is formed by adopting the structure of the composite film layer, the color of the CIGS thin-film solar cell module can be changed by only changing the material and the thickness of each film layer in the composite film layer, and the cover plate glass is not required to be changed, so that the reduction of the visible light transmittance is avoided, and the utilization efficiency of solar energy can be increased.
Description
Technical Field
The invention relates to the technical field of thin-film solar cells, in particular to a colorful copper indium gallium selenide thin-film solar cell and a preparation method thereof.
Background
With the increasing energy crisis and environmental pollution, how to increase the proportion of renewable energy sources and adjust the energy structure becomes the mainstream of social development. Solar energy has received much attention and has been rapidly developed in recent years as an important renewable energy source. The crystalline silicon photovoltaic module is used as a mainstream product in the photovoltaic industry, and the cell performance improving space is limited due to high energy consumption and high pollution in the production of crystalline silicon raw materials. The Copper Indium Gallium Selenide (CIGS) thin-film solar cell has good weak light (scattering) effect and low temperature coefficient, and has the characteristic of no attenuation for a long time, so that the power generation performance is good, and the power generation is stable. The production process is simple, has no pollution and other advantages, and is evaluated as the future of solar energy in the industry. By the end of 2016, the installed power generation capacity of the global accumulative photovoltaic module reaches 258.8GW, wherein the CIGS thin-film solar cell occupies more than 3GW, and the annual capacity exceeds 3 GW.
In addition, the CIGS thin-film solar cell module is attractive and elegant, has variable color and perfectly conforms to BIPV and roof power generation integrated with a photovoltaic building. At present, the industrial production method for the color copper indium gallium selenide thin-film solar cell module in the industry is mainly realized by adopting cover plate glass with different colors, so that the cost is increased, the transmittance of the cover plate glass is reduced, and the conversion efficiency of the copper indium gallium selenide thin-film solar cell module is reduced.
In order to easily change the color of the CIGS thin-film solar cell module, people try to change the thickness of each film layer in the CIGS thin-film solar cell structure, and the method is small in color change range and single in color variety.
Disclosure of Invention
The invention aims to provide a colorful CIGS thin-film solar cell and a preparation method thereof, wherein the cell can conveniently change the appearance color, has simple and stable preparation process and good repeatability, and is suitable for large-scale industrial production.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a colorful CIGS thin-film solar cell comprises a glass substrate, wherein a barrier layer, a back electrode layer, a CIGS absorption layer, a buffer layer and a transparent conductive film layer are sequentially laminated on the top surface of the glass substrate from bottom to top.
Further, the upper transparent insulating film and the lower transparent insulating film are transparent oxide films, transparent nitride films or transparent oxynitride films.
Furthermore, the upper transparent insulating film and the lower transparent insulating film are aluminum-doped zinc oxide, gallium-doped zinc oxide, fluorine-doped tin oxide, indium tin oxide, silicon dioxide, silicon nitride, titanium dioxide and titanium oxynitride.
Further, the metal conductive film is molybdenum, silver, copper, gold, cobalt, nickel, chromium, titanium, tantalum, aluminum, indium, platinum, palladium or a metal alloy of the above.
The invention also provides a preparation method of the color CIGS thin-film solar cell, which comprises the following steps:
s1, depositing a barrier layer on the glass substrate by adopting a sputtering process;
s2, depositing a back electrode layer on the barrier layer by adopting a sputtering process;
s3, scribing the back electrode layer by using a laser scribing process to separate the back electrode layer;
s4, preparing a copper indium gallium selenide absorption layer on the back electrode layer;
s5, preparing a buffer layer on the CIGS absorption layer to form a solar cell PN junction;
s6, scribing a second scribing line by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film by a sputtering process, wherein the lower transparent insulating film is a transparent oxide film or a transparent nitride film;
s8, depositing a metal conductive film by adopting a sputtering process;
s9, depositing an upper transparent insulating film by a sputtering process, wherein the upper transparent insulating film is a transparent oxide film or a transparent nitride film, and obtaining the color CIGS thin-film solar cell as claimed in claim 1.
The invention has the beneficial effects that:
the color of the CIGS thin-film solar cell module can be changed by changing the material and the thickness of each film layer in the composite film layer without changing cover plate glass, so that the reduction of the visible light transmittance is avoided, and the utilization efficiency of solar energy can be increased.
And secondly, the appearance color of the solar cell is easy to adjust, and the preparation is simple.
And thirdly, color cover plate glass is not needed, the thickness of the transparent conductive film can be reduced, the material consumption is reduced, the production cost is reduced, and the industrial popularization and application are facilitated.
Drawings
The invention is further illustrated with reference to the following figures and examples:
FIG. 1 is a schematic view of the present invention;
fig. 2 is a color indication diagram of a cigs thin-film solar cell according to a first embodiment of the invention;
fig. 3 is a color indication diagram of a copper indium gallium selenide thin-film solar cell manufactured according to a second embodiment of the invention;
fig. 4 is a color indication diagram of a copper indium gallium selenide thin-film solar cell manufactured by a third embodiment of the invention;
fig. 5 is a color indication diagram of a copper indium gallium selenide thin-film solar cell manufactured according to a fourth embodiment of the invention.
Detailed Description
As shown in fig. 1, the invention provides a color copper indium gallium selenide thin-film solar cell, which comprises a glass substrate 1, wherein a barrier layer 2, a back electrode layer 3, a copper indium gallium selenide absorption layer 4, a buffer layer 5 and a transparent conductive film layer are sequentially laminated on the top surface of the glass substrate 1 from bottom to top, the transparent conductive film layer is a composite film layer formed by three films, and the composite film layer is an upper transparent insulating film 8, a metal conductive film 7 and a lower transparent insulating film 6 from top to bottom.
The upper transparent insulating film 8 and the lower transparent insulating film 6 are transparent oxide films or transparent nitride films, preferably, the upper transparent insulating film 8 and the lower transparent insulating film 6 are aluminum-doped zinc oxide, silicon dioxide, silicon nitride or titanium dioxide, and the metal conductive film 7 is molybdenum, silver, copper, gold, cobalt, nickel or chromium.
Example one
The invention also provides a preparation method of the color CIGS thin-film solar cell, which comprises the following steps:
s1, depositing a barrier layer 2 on the soda-lime glass substrate 1 with the thickness of 2.1mm by adopting a sputtering process, wherein the barrier layer 2 is silicon nitride with the thickness of 90 nm;
s2, depositing a back electrode layer 3 on the barrier layer by adopting a sputtering process; the back electrode layer 3 is molybdenum with a thickness of 450 nm;
s3, scribing a first scribing line P1 by using a laser scribing process, and scribing the back electrode layer 3 to separate the back electrode layer;
s4, preparing the copper indium gallium selenide absorption layer 4 with the thickness of 1400nm on the back electrode layer 3 by using conventional methods such as a three-step co-evaporation method, selenization after electroplating, a co-sputtering selenization method or a selenization after sputtering and the like;
s5, depositing cadmium sulfide buffer layers by adopting a chemical water bath method in sequence, and then depositing a high-resistance intrinsic zinc oxide material by adopting a sputtering method to form a buffer layer 5 with the thickness of 100nm and form a solar cell PN junction;
s6, scribing a second scribing line P2 by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film 6 by adopting a sputtering process, wherein the lower transparent insulating film 6 is an aluminum-doped zinc oxide film with the thickness of 100 nm;
s8, depositing a metal conductive film 7 by a sputtering process, wherein the metal conductive film 7 is a silver film layer with the thickness of 5 nm;
s9, depositing the upper transparent insulating film 8 by adopting a sputtering process, wherein the upper transparent insulating film 8 is an aluminum-doped zinc oxide film with the thickness of 100nm, and obtaining the color CIGS thin-film solar cell.
For the prepared solar cell, the transmittance of the transparent conductive oxide thin film layer with the sandwich structure of aluminum-doped zinc oxide/metallic silver layer/aluminum-doped zinc oxide measured by a spectrophotometer reaches 83.8 percent (the wavelength is 380--4Ω · cm, measuring the optical performance of each film layer by an ellipsometer to obtain the refractive index n and extinction coefficient k value of each film layer, and obtaining the color of the copper indium gallium selenide thin-film solar cell by combining with an optical simulation software TFCalc 3.5 shown in fig. 2, wherein the international society for illumination (CIE) standard L = 53.7; a = 8.03; b = 10.61.
Example two
The invention provides a preparation method of a colorful CIGS thin-film solar cell, which comprises the following steps:
s1, depositing a barrier layer 2 on the soda-lime glass substrate 1 with the thickness of 2.1mm by adopting a sputtering process, wherein the barrier layer 2 is silicon nitride with the thickness of 90 nm;
s2, depositing a back electrode layer 3 on the barrier layer by adopting a sputtering process; the back electrode layer 3 is molybdenum with a thickness of 450 nm;
s3, scribing a first scribing line P1 by using a laser scribing process, and scribing the back electrode layer 3 to separate the back electrode layer;
s4, preparing the copper indium gallium selenide absorption layer 4 with the thickness of 1400nm on the back electrode layer 3 by using conventional methods such as a three-step co-evaporation method, selenization after electroplating, a co-sputtering selenization method or a selenization after sputtering and the like;
s5, depositing cadmium sulfide buffer layers by adopting a chemical water bath method in sequence, and then depositing a high-resistance intrinsic zinc oxide material by adopting a sputtering method to form a buffer layer 5 with the thickness of 100nm and form a solar cell PN junction;
s6, scribing a second scribing line P2 by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film 6 by adopting a sputtering process, wherein the lower transparent insulating film 6 is an aluminum-doped zinc oxide film with the thickness of 100 nm;
s8, depositing a metal conductive film 7 by a sputtering process, wherein the metal conductive film 7 is a copper film layer with the thickness of 5 nm;
s9, depositing the upper transparent insulating film 8 by adopting a sputtering process, wherein the upper transparent insulating film 8 is an aluminum-doped zinc oxide film with the thickness of 100nm, and obtaining the color CIGS thin-film solar cell.
For the prepared solar cell, the transmittance of the transparent conductive oxide thin film layer with the sandwich structure of aluminum-doped zinc oxide/metal copper layer/aluminum-doped zinc oxide measured by a spectrophotometer reaches 82.4 percent (the wavelength is 380-1200nm), and the resistivity measured by a Hall effect tester is 8.3 multiplied by 10-5Ω · cm, measuring the optical performance of each film layer by an ellipsometer to obtain the refractive index n and extinction coefficient k value of each film layer, and obtaining the color of the copper indium gallium selenide thin-film solar cell by combining with the optical simulation software TFCalc 3.5 shown in fig. 3, wherein the international society for illumination (CIE) standard L = 46.65; a = 17.51; b = -2.4.
EXAMPLE III
The invention provides a preparation method of a colorful CIGS thin-film solar cell, which comprises the following steps:
s1, depositing a barrier layer 2 on the soda-lime glass substrate 1 with the thickness of 2.1mm by adopting a sputtering process, wherein the barrier layer 2 is silicon nitride with the thickness of 90 nm;
s2, depositing a back electrode layer 3 on the barrier layer by adopting a sputtering process; the back electrode layer 3 is molybdenum with a thickness of 450 nm;
s3, scribing a first scribing line P1 by using a laser scribing process, and scribing the back electrode layer 3 to separate the back electrode layer;
s4, preparing the copper indium gallium selenide absorption layer 4 with the thickness of 1400nm on the back electrode layer 3 by using conventional methods such as a three-step co-evaporation method, selenization after electroplating, a co-sputtering selenization method or a selenization after sputtering and the like;
s5, depositing cadmium sulfide buffer layers by adopting a chemical water bath method in sequence, and then depositing a high-resistance intrinsic zinc oxide material by adopting a sputtering method to form a buffer layer 5 with the thickness of 100nm and form a solar cell PN junction;
s6, scribing a second scribing line P2 by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film 6 by adopting a sputtering process, wherein the lower transparent insulating film 6 is an aluminum-doped zinc oxide film with the thickness of 50 nm;
s8, depositing a metal conductive film 7 by a sputtering process, wherein the metal conductive film 7 is an aluminum film layer with the thickness of 1 nm;
s9, depositing the upper transparent insulating film 8 by adopting a sputtering process, wherein the upper transparent insulating film 8 is an aluminum-doped zinc oxide film with the thickness of 50nm, and obtaining the color CIGS thin-film solar cell.
For the prepared solar cell, the transmittance of the transparent conductive oxide thin film layer with the sandwich structure of aluminum-doped zinc oxide/metal aluminum layer/aluminum-doped zinc oxide measured by a spectrophotometer reaches 81.7 percent (the wavelength is 380-1200nm), and the resistivity measured by a Hall effect tester is 1.92 multiplied by 10-4Ω · cm, measuring the optical performance of each film layer by an ellipsometer to obtain the refractive index n and extinction coefficient k value of each film layer, and obtaining the color of the copper indium gallium selenide thin-film solar cell by combining with the optical simulation software TFCalc 3.5 shown in fig. 4, wherein the international society for illumination (CIE) standard L = 14.74; a = 38.26; b = -46.1.
Example four
The invention provides a preparation method of a colorful CIGS thin-film solar cell, which comprises the following steps:
s1, depositing a barrier layer 2 on the soda-lime glass substrate 1 with the thickness of 2.1mm by adopting a sputtering process, wherein the barrier layer 2 is silicon nitride with the thickness of 90 nm;
s2, depositing a back electrode layer 3 on the barrier layer by adopting a sputtering process; the back electrode layer 3 is molybdenum with a thickness of 450 nm;
s3, scribing a first scribing line P1 by using a laser scribing process, and scribing the back electrode layer 3 to separate the back electrode layer;
s4, preparing the copper indium gallium selenide absorption layer 4 with the thickness of 1400nm on the back electrode layer 3 by using conventional methods such as a three-step co-evaporation method, selenization after electroplating, a co-sputtering selenization method or a selenization after sputtering and the like;
s5, depositing cadmium sulfide buffer layers by adopting a chemical water bath method in sequence, and then depositing a high-resistance intrinsic zinc oxide material by adopting a sputtering method to form a buffer layer 5 with the thickness of 100nm and form a solar cell PN junction;
s6, scribing a second scribing line P2 by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film 6 by adopting a sputtering process, wherein the lower transparent insulating film 6 is an aluminum-doped zinc oxide film with the thickness of 30 nm;
s8, depositing a metal conductive film 7 by a sputtering process, wherein the metal conductive film 7 is a molybdenum film layer with the thickness of 15 nm;
s9, depositing the upper transparent insulating film 8 by adopting a sputtering process, wherein the upper transparent insulating film 8 is an aluminum-doped zinc oxide film with the thickness of 30nm, and obtaining the color CIGS thin-film solar cell.
For the prepared solar cell, the transmittance of the transparent conductive oxide thin film layer with the sandwich structure of the aluminum-doped zinc oxide/metal molybdenum layer/aluminum-doped zinc oxide measured by a spectrophotometer reaches 80 percent (the wavelength is 380--5Ω · cm, measuring the optical performance of each film layer by an ellipsometer to obtain the refractive index n and extinction coefficient k value of each film layer, and obtaining the color of the copper indium gallium selenide thin-film solar cell by combining with the optical simulation software TFCalc 3.5 shown in fig. 5, wherein the international society for illumination (CIE) standard L = 37.88; a = 16; b = -5.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (5)
1. A colorful CIGS thin-film solar cell comprises a glass substrate, wherein a barrier layer, a back electrode layer, a CIGS absorption layer, a buffer layer and a transparent conductive film layer are sequentially laminated on the top surface of the glass substrate from bottom to top.
2. The CIGS thin-film solar cell of claim 1, wherein the upper and lower transparent insulating films are transparent oxide, nitride or oxynitride films.
3. The color copper indium gallium selenide thin-film solar cell according to claim 1 or 2, wherein the upper transparent insulating film and the lower transparent insulating film are aluminum-doped zinc oxide, gallium-doped zinc oxide, fluorine-doped tin oxide, indium tin oxide, silicon dioxide, silicon nitride, titanium dioxide, and titanium oxynitride.
4. The color copper indium gallium selenide thin-film solar cell according to claim 3, wherein the metal conductive film is molybdenum, silver, copper, gold, cobalt, nickel, chromium, titanium, tantalum, aluminum, indium, platinum, palladium or a metal alloy thereof.
5. A preparation method of a colorful CIGS thin-film solar cell is characterized by comprising the following steps:
s1, depositing a barrier layer on the glass substrate by adopting a sputtering process;
s2, depositing a back electrode layer on the barrier layer by adopting a sputtering process;
s3, scribing the back electrode layer by using a laser scribing process to separate the back electrode layer;
s4, preparing a copper indium gallium selenide absorption layer on the back electrode layer;
s5, preparing a buffer layer on the CIGS absorption layer to form a solar cell PN junction;
s6, scribing a second scribing line by using a laser scribing process, separating PN junctions and providing front and rear electrode connecting channels;
s7, depositing a lower transparent insulating film by a sputtering process, wherein the lower transparent insulating film is a transparent oxide film or a transparent nitride film;
s8, depositing a metal conductive film by adopting a sputtering process;
s9, depositing an upper transparent insulating film by a sputtering process, wherein the upper transparent insulating film is a transparent oxide film or a transparent nitride film, and obtaining the color CIGS thin-film solar cell as claimed in claim 1.
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