CN112635585A - Colorful CIGS thin-film solar cell and preparation method thereof - Google Patents
Colorful CIGS thin-film solar cell and preparation method thereof Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 189
- 238000000034 method Methods 0.000 claims abstract description 75
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 51
- 238000000151 deposition Methods 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 230000008569 process Effects 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 238000013329 compounding Methods 0.000 claims abstract description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 16
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 12
- 229910001120 nichrome Inorganic materials 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 10
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000013084 building-integrated photovoltaic technology Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 239000003086 colorant Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 161
- 239000007789 gas Substances 0.000 description 19
- 238000000411 transmission spectrum Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
The invention discloses a colorful CIGS thin-film solar cell which comprises a glass substrate, wherein a back electrode, an absorption layer, a buffer layer, a high-resistance layer and a window layer which are arranged in a stacked mode are sequentially arranged on the top surface of the glass substrate from bottom to top; the window layer is characterized by being formed by compounding and overlapping a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 in sequence. The preparation method comprises the following steps: 1. taking the high-resistance layer as a starting point; 2. depositing a TCO transparent conductive film F1 on the top surface of the high-resistance layer by adopting a magnetron sputtering process; 3. depositing an interfacial film F2 layer atop the F1 layer; 4. depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer; 5. depositing an interfacial film F4 layer atop the F3 layer; 6. a TCO transparent conductive film F5 was deposited on top of the F4 layer. The front electrode for the color CIGS thin-film solar cell is obtained, so that the cell structure can carry colors, and the overall structure and performance of the thin-film solar cell are guaranteed.
Description
Technical Field
The invention relates to the technical field of thin film solar cells, in particular to a CIGS thin film solar cell front electrode capable of realizing multiple colors and a preparation method thereof.
Background
CIGS thin-film solar cells are one of the most promising solar cells recognized internationally due to their advantages of excellent overall power generation efficiency, easy integration with buildings, and the like.
With the rapid reduction of the cost of a photovoltaic industry chain in recent years, the photovoltaic industry is enabled to move from a photovoltaic power station to the fields of BIPV, new energy automobiles, household power generation, smart agriculture, electronic products and the like, brand-new energy is combined with other industries to present strong advantages and development potentials, the photovoltaic industry moves from policy dependence to the non-subsidy era, and the spontaneous market demand rises to open a wide space for the development of the photovoltaic industry.
The traditional CIGS is only single black, the installation of colorful BIPV can solve the problems of energy conservation and emission reduction, the external image of a building can be improved, the aesthetic appreciation of a commercial building is better met, and the photovoltaic products are required to have diversity in the fields of new energy automobiles, household power generation, smart agriculture, electronic products and the like, so that the photovoltaic products are more distinctive for improving the overall brand image of an enterprise. Therefore, CIGS high conversion solar modules of multiple colors are becoming a market demand.
At the present stage, the installation of colored CIGS is mainly the natural color of thin film solar and glass after combination, and colored BIPV existing in the market is characterized in that a single-layer or multi-layer colored functional layer is added inside or outside a thin film solar cell cover plate or a chemical coloring method is adopted, so that the manufacturing steps are obviously increased, the cost is improved, and the photoelectric conversion efficiency of the cell is lost; the method endows the CIGS thin-film solar cell with a color front electrode structure layer, and simultaneously guarantees the overall performance of the thin-film solar cell.
Disclosure of Invention
The invention aims to provide a colorful CIGS thin-film solar cell and a preparation method thereof.
The technical scheme adopted by the invention for solving the technical problems is as follows:
a color CIGS thin-film solar cell comprises a glass substrate, wherein a back electrode, an absorption layer, a buffer layer, a high-resistance layer and a window layer are sequentially laminated on the top surface of the glass substrate from bottom to top, and the window layer is the front electrode;
the window layer is prepared by compounding and overlapping a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 in sequence, and the thickness of the window layer is 45-175 nm;
the TCO transparent conductive film F1 in the window layer is made of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO films, and the thickness of the F1 layer is 20-70 nm;
the interface film F2 layer is NiCr, ZnO, Zn2O、TiO2、TiO、PbO2A PbO, ZnS or InS film, wherein the thickness of the interfacial film F2 layer is 1-5 nm;
the transparent metal conductive film F3 layer is an Au, Ag, Cu, Zn, Pt, Ti, Ga, In or Al film, and the thickness of the F3 layer is 3-25 nm;
the interface film F4 layer is NiCr, ZnO, Zn2O、TiO2、TiO、PbO2A PbO, ZnS or InS film, the thickness of the F4 layer being 1-5 nm;
the TCO transparent conductive film F5 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO thin films, and the thickness of the F5 layer is 20-70 nm.
Furthermore, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 composite stacked structure are repeatedly prepared on the top surface of the TCO transparent conductive film F5 layer, so that the CIGS thin-film solar cell presents better and full color.
The invention also provides a preparation method of the color CIGS thin-film solar cell structure, which is characterized by comprising the following steps: the method comprises the following steps:
s1, taking ultra-white float glass as a glass substrate, removing dirt on the surface of the glass substrate, and activating the surface S of the glass substrate;
s2, depositing a TCO transparent conductive film F1 on the top surface of the glass substrate by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO thin films;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is NiCr, ZnO and Zn2O、TiO2、TiO、PbO2PbO, ZnS or InS thin film;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Au, Ag, Cu, Zn, Pt, Ti, Ga, In or Al film;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is NiCr, ZnO and Zn2O、TiO2、TiO、PbO2PbO, ZnS or InS thin film;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO films;
further, when the TCO transparent conductive film F1 in step S2 is a BZO, AZO, GZO, IGZO, IZO, CTO, ZTO, or ITO thin film, the thickness of the F1 layer is 20 to 70 nm; one of direct current, radio frequency or direct current radio frequency coupling magnetron sputtering process can be adopted;
further, in the step S3, the thickness of the interface film F2 layer is 1-5 nm, and direct current or radio frequency magnetron sputtering is adopted;
further, in the step S4, the thickness of the transparent metal conductive film F3 layer is 3-25 nm, and direct current or radio frequency magnetron sputtering is adopted;
further, in the step S5, the thickness of the interface film F4 layer is 1-5 nm, and direct current or radio frequency magnetron sputtering is adopted;
further, in the step S6, the thickness of the TCO transparent conductive film F5 layer is 20 to 70 nm; one of direct current, radio frequency or direct current radio frequency coupling magnetron sputtering process can be adopted;
further, the operations S3-S6 are repeated on the top surface of the TCO transparent conductive film F5 layer, so that the CIGS thin-film solar cell presents better and full color, and finally, a colorful BIPV thin-film solar cell is obtained.
The mechanism of the technical scheme of the invention is as follows:
1. according to the theory of thin film interference, when the thickness of the film is equal to 1/4 of the wavelength of the incident light in the medium, the optical path of the reflected light on the two surfaces of the film is exactly equal to half the wavelength, so that the light is interfered and counteracted, the reflection loss of the light is greatly reduced, the intensity of the transmitted light is enhanced, and the antireflection effect is achieved. The proper refractive index n and thickness d of the film are selected to play a good role in anti-reflection. Therefore, each layer of the nano-multilayer film exerts its advantages by utilizing the high conductivity of the metal film and the antireflection action of the transparent film. Therefore, the TCO transparent conductive film F1 layer, the metal transparent conductive film F3 layer and the TCO transparent conductive film F5 layer have excellent structural electrical properties, and have an anti-reflection effect and high light transmittance.
2. Due to the different composition of the TCO transparent conductive film F1, F5 layers, different refractive indices, in combination with the different composition of the metallic transparent conductive film F3 layer, the multilayer interference stack changes the reflection spectrum of the composite film, allowing the CIGS cell to exhibit a variety of color appearances.
3. Due to the fact that the TCO transparent conductive film F1 and F5 layers with different film thicknesses are combined with the metal transparent conductive film F3 layer with different film thicknesses, the refractive index is changed, the reflection spectrum of the front electrode can be adjusted after interference stacking, and the CIGS cell can show various color appearances.
4. S3 interfacial film F2 layer: 1. the protective effect is achieved, the TCO transparent conductive film F1 layer is isolated from the metal transparent conductive film F3 layer, and the metal film is prevented from being oxidized by the TCO film to influence the conductivity; 2. the buffer layer is grown under the metal layer, which is beneficial to the growth of the metal film and the improvement of the optical characteristic.
5. The S4 metal transparent conductive film F3 is small in thickness, so that the film has high conductivity and light transmittance, the overall conductivity of the front electrode is improved, and the transmission of current carriers is facilitated.
6. Interfacial film F4 layer: 1. the protective effect is achieved, the TCO transparent conductive film F1 layer is isolated from the metal transparent conductive film F3 layer, and the metal film is prevented from being oxidized by the TCO film to influence the conductivity; 2. the buffer layer is grown on the metal layer, so that the thin island-shaped growth discontinuity of the metal film is prevented, and the buffer layer is favorable for the growth of the metal film and the improvement of the optical characteristic.
The invention has the beneficial effects that:
1. so that the CIGS cell can exhibit a desired colored appearance.
2. The prior front electrode mainly adopts an AZO film, the thickness of the AZO film is as high as 1200nm, so that the better photoelectric performance index can be realized, a large amount of high-purity Zn and Al materials are required to be consumed, the manufacturing cost is higher, and the coating time is longer. The total thickness of the front electrode prepared by the method is less than or equal to 175nm, the front electrode can be obtained at room temperature, the film coating time is shortened, and the manufacturing cost is reduced;
3. the TCO transparent conductive film F1 layer, the metal transparent conductive film F3 layer and the TCO transparent conductive film F5 layer have excellent structural electrical properties, have an anti-reflection effect and high light transmittance, and improve the overall conductivity of the front electrode.
Drawings
FIG. 1 is a schematic view of a colored front electrode prepared according to the present invention;
FIG. 2 is a sample of a light blue CIGS thin film solar cell front electrode and transmission spectrum in accordance with example 1 of the present invention;
FIG. 3 is a light gray CIGS thin film solar cell front electrode sample and transmission spectrum of example 2 of the present invention;
fig. 4 is a CIGS thin film solar cell front electrode sample and transmission spectrum for green color in example 3 of the present invention.
Detailed Description
A color CIGS thin-film solar cell structure is shown in figure 1 and comprises a glass substrate, wherein a back electrode, an absorption layer, a buffer layer, a high-resistance layer and a window layer (front electrode) are sequentially laminated on the top surface of the glass substrate from bottom to top;
the back electrode is formed by overlapping a Mo film layer/a MoN film layer; the absorption layer is a CIGS thin film; the buffer layer is a CdS, ZnS or InS film; the high-resistance layer is an intrinsic ZnO film; the thickness of the Mo film layer in the back electrode is 800-1200 nm, and the thickness of the MoN film layer is 25-55 nm; the thickness of the CIGS thin film of the absorption layer is 1300-2600 nm; the thickness of the buffer layer is 20-130 nm; the thickness of the high-resistance layer is 10-140 nm.
The above-described structure is the prior art, and the manufacturing method thereof is omitted.
The window layer is formed by compounding and overlapping a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 in sequence, and the thickness of the window layer is 45-175 nm. The preparation method is shown in the following specific examples:
example one
As shown in fig. 1, the present invention provides a method for manufacturing a color CIGS thin film solar cell, including the following steps:
s1, taking the prepared high-resistance layer as a starting point;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the high-resistance layer by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is an AZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, AZO target (Al)2O3: ZnO =1.5% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S; the working pressure is 0.3-0.5 Pa, the power is 150-250W, and the thickness of a deposited F1 layer is 55 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is a NiCr film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method and an NiCr target, introducing Ar gas flow of 55sccm, and depositing an interface film F2 layer on the top surface of F1; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F2 layer is 1 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Al film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method, introducing Ar gas into an Al target with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.8Pa, the power is 30W, and the thickness of the deposited F3 layer is 10.5 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is a NiCr film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method and an NiCr target, introducing Ar gas flow of 55sccm, and depositing an interface film F4 layer on the top surface of F3; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F4 layer is 1 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is an AZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, AZO target (Al)2O3: ZnO =1.5% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F5 layer on the top surface of F4; the working pressure is 0.3-0.5 Pa, the power is 150-250W, and the thickness of a deposited F5 layer is 55 nm;
finally, a front electrode of the CIGS thin-film solar cell with light blue color is obtained, and the transmission spectrum result is shown in figure 2.
Example two
As shown in fig. 1, the present invention provides a method for preparing a front electrode for a CIGS thin-film solar cell capable of implementing multiple colors, comprising the steps of:
s1, taking the prepared high-resistance layer as a starting point;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the high-resistance layer by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is a GZO thin film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, a GZO target (Ga)2O3: ZnO =0.5% to 1.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S; the working pressure is 0.1-0.3 Pa, the power is 100-200W, and the thickness of a deposited F1 layer is 70 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is a ZnO film with insufficient oxygen;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Zn target and introducing O2Depositing an interface film F2 layer on the top surface of F1 with the gas flow of 5sccm and the Ar gas flow of 55 sccm; the working pressure is 0.8Pa, the power is 10W, and the thickness of the deposited F2 layer is 2 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Ag film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method, introducing Ar gas into an Ag target with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F3 layer is 10 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is a ZnO film with insufficient oxygen;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Zn target and introducing O2Depositing an interface film F4 layer on the top surface of F3 with the gas flow of 5sccm and the Ar gas flow of 55 sccm; the working pressure is 0.8Pa, the power is 10W, and the thickness of the deposited F4 layer is 2 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is a GZO thin film;
the method specifically comprises the following steps: by adopting a direct-current magnetron sputtering method,GZO target (Ga)2O3: ZnO =0.5% to 1.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F5 layer on the top surface of F4; the working pressure is 0.1-0.3 Pa, the power is 100-200W, and the thickness of a deposited F1 layer is 70 nm;
finally, a light gray CIGS thin-film solar cell front electrode is obtained, and the transmission spectrum result is shown in figure 3.
EXAMPLE III
As shown in fig. 1, the present invention provides a method for preparing a front electrode for a CIGS thin-film solar cell capable of implementing multiple colors, comprising the steps of:
s1, taking the prepared high-resistance layer as a starting point;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the high-resistance layer by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is a BZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, BZO target (B)2O3: ZnO =1.0% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S; the working pressure is 0.3-0.9 Pa, the power is 200-250W, and the thickness of a deposited F1 layer is 50 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is made of TiO with insufficient oxygen2A film;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Ti target and introducing O2Depositing an interface film F2 layer on the top surface of F1 with the gas flow of 6sccm and the Ar gas flow of 55 sccm; the working pressure is 0.5Pa, the power is 15W, and the thickness of the deposited F2 layer is 3 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Al film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method, introducing Ar gas into an Al target with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.9Pa, the power is 20W, and the thickness of the deposited F3 layer is 16 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is made of TiO with insufficient oxygen2A film;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Ti target and introducing O2Depositing an interface film F4 layer on the top surface of F3 with the gas flow of 6sccm and the Ar gas flow of 55 sccm; the working pressure is 0.5Pa, the power is 15W, and the thickness of the deposited F2 layer is 3 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is a BZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, BZO target (B)2O3: ZnO =1.0% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F4 layer on the top surface of the F4 layer; the working pressure is 0.3-0.9 Pa, the power is 200-250W, and the thickness of a deposited F1 layer is 50 nm;
finally, a green CIGS thin-film solar cell front electrode is obtained, and the transmission spectrum result is shown in figure 4.
The foregoing is merely a preferred embodiment of the invention and is not intended to limit the invention in any manner; those skilled in the art can make numerous possible variations and modifications to the present teachings, or modify equivalent embodiments to equivalent variations, without departing from the scope of the present teachings, using the methods and techniques disclosed above. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments according to the technical essence of the present invention are still within the scope of the protection of the technical solution of the present invention.
Claims (6)
1. A color CIGS thin-film solar cell comprises a glass substrate, wherein a back electrode, an absorption layer, a buffer layer, a high-resistance layer and a window layer which are arranged in a stacked mode are sequentially arranged on the top surface of the glass substrate from bottom to top;
the window layer is prepared by compounding and overlapping a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 in sequence;
the thickness of the window layer is 45-175 nm.
2. The colorful CIGS thin-film solar cell as claimed in claim 1, wherein the window layer TCO transparent conductive film F1 is BZO, AZO, GZO, IGZO, IZO, CTO, ZTO or ITO thin film, and the thickness of the F1 layer is 20-70 nm;
the interface film F2 layer is NiCr, ZnO, Zn2O、TiO2、TiO、PbO2A PbO, ZnS or InS film, wherein the thickness of the interfacial film F2 layer is 1-5 nm;
the transparent metal conductive film F3 layer is an Au, Ag, Cu, Zn, Pt, Ti, Ga, In or Al film, and the thickness of the F3 layer is 3-25 nm;
the interface film F4 layer is NiCr, ZnO, Zn2O、TiO2、TiO、PbO2A PbO, ZnS or InS film, the thickness of the F4 layer being 1-5 nm;
the TCO transparent conductive film F5 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO thin films, and the thickness of the F5 layer is 20-70 nm.
3. The colorful CIGS thin-film solar cell as claimed in claim 2, wherein a composite stacked structure of the interface film F2 layer, the metal transparent conductive film F3 layer, the interface film F4 layer and the TCO transparent conductive film F5 layer is repeatedly prepared on the top surface of the TCO transparent conductive film F5 layer, so that the CIGS thin-film solar cell presents better and full color.
4. A method of manufacturing a colored CIGS thin film solar cell as claimed in any of claims 1 to 3, wherein: the method comprises the following steps:
s1, taking the prepared high-resistance layer as a starting point;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the high-resistance layer by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO thin films;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is NiCr, ZnO and Zn2O、TiO2、TiO、PbO2PbO, ZnS or InS thin film;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Au, Ag, Cu, Zn, Pt, Ti, Ga, In or Al film;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is NiCr, ZnO and Zn2O、TiO2、TiO、PbO2PbO, ZnS or InS thin film;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is one of BZO, AZO, GZO, IGZO, IZO, CTO, ZTO and ITO thin films.
5. The method of claim 4, wherein the method comprises the following steps: when the TCO transparent conductive film F1 in step S2 is a BZO, AZO, GZO, IGZO, IZO, CTO, ZTO, or ITO thin film, the thickness of the F1 layer is 20 to 70 nm; one of direct current, radio frequency or direct current radio frequency coupling magnetron sputtering process can be adopted;
step S3, the thickness of the interface film F2 layer is 1-5 nm, and direct current or radio frequency magnetron sputtering is adopted;
s4, adopting direct current or radio frequency magnetron sputtering to form the transparent metal conductive film F3 with the thickness of 3-25 nm;
step S5, the thickness of the interface film F4 layer is 1-5 nm, and direct current or radio frequency magnetron sputtering is adopted;
in the step S6, the thickness of the TCO transparent conductive film F5 layer is 20-70 nm; one of direct current, radio frequency or direct current radio frequency coupling magnetron sputtering processes can be adopted.
6. The method of claim 4 or 5, wherein the method comprises the following steps: the method comprises the following steps: and repeating the operations S3-S6 on the top surface of the TCO transparent conductive film F5 layer, so that the CIGS thin-film solar cell presents better and full color, and finally, the colorful BIPV thin-film solar cell is obtained.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102007562A (en) * | 2008-02-18 | 2011-04-06 | 法国圣戈班玻璃厂 | Photovoltaic cell and substrate for photovoltaic cell |
| US20130171469A1 (en) * | 2012-01-04 | 2013-07-04 | Mke Technology Co. Ltd | Transparent conductive thin film |
| CN104882495A (en) * | 2015-05-07 | 2015-09-02 | 厦门神科太阳能有限公司 | Transparent conductive window layer for solar cell, and CIGS-base thin-film solar cell |
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
| CN110061088A (en) * | 2019-04-26 | 2019-07-26 | 潮州市亿加光电科技有限公司 | A kind of CIGS solar film battery of flexible substrates and preparation method thereof |
| CN111048603A (en) * | 2019-12-16 | 2020-04-21 | 凯盛光伏材料有限公司 | Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof |
| US20200274007A1 (en) * | 2019-02-27 | 2020-08-27 | Korea Institute Of Science And Technology | Color-controllable thin-film solar cell and method of manufacturing the same |
-
2020
- 2020-12-25 CN CN202011559824.4A patent/CN112635585A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102007562A (en) * | 2008-02-18 | 2011-04-06 | 法国圣戈班玻璃厂 | Photovoltaic cell and substrate for photovoltaic cell |
| US20130171469A1 (en) * | 2012-01-04 | 2013-07-04 | Mke Technology Co. Ltd | Transparent conductive thin film |
| CN104882495A (en) * | 2015-05-07 | 2015-09-02 | 厦门神科太阳能有限公司 | Transparent conductive window layer for solar cell, and CIGS-base thin-film solar cell |
| CN108511535A (en) * | 2018-06-04 | 2018-09-07 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof |
| US20200274007A1 (en) * | 2019-02-27 | 2020-08-27 | Korea Institute Of Science And Technology | Color-controllable thin-film solar cell and method of manufacturing the same |
| CN110061088A (en) * | 2019-04-26 | 2019-07-26 | 潮州市亿加光电科技有限公司 | A kind of CIGS solar film battery of flexible substrates and preparation method thereof |
| CN111048603A (en) * | 2019-12-16 | 2020-04-21 | 凯盛光伏材料有限公司 | Colorful copper indium gallium selenide thin-film solar cell and preparation method thereof |
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