CN102007562A - Photovoltaic cell and substrate for photovoltaic cell - Google Patents
Photovoltaic cell and substrate for photovoltaic cell Download PDFInfo
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- CN102007562A CN102007562A CN2009801136218A CN200980113621A CN102007562A CN 102007562 A CN102007562 A CN 102007562A CN 2009801136218 A CN2009801136218 A CN 2009801136218A CN 200980113621 A CN200980113621 A CN 200980113621A CN 102007562 A CN102007562 A CN 102007562A
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- antireflection
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 104
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 97
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- 239000004332 silver Substances 0.000 claims abstract description 9
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- 230000003287 optical effect Effects 0.000 claims description 42
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- 238000009736 wetting Methods 0.000 claims description 8
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- 239000000377 silicon dioxide Substances 0.000 claims description 4
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- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3618—Coatings of type glass/inorganic compound/other inorganic layers, at least one layer being metallic
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3644—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the metal being silver
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3655—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating containing at least one conducting layer
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
- C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/70—Properties of coatings
- C03C2217/73—Anti-reflective coatings with specific characteristics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a photovoltaic cell (1) including an absorbent photovoltaic material, in particular a cadmium-based one, wherein said cell includes a front-surface substrate (10), in particular a transparent glass substrate that comprises, on a main surface, a transparent electrode coating (100) that comprises a stack of thin layers including at least one functional metal layer (40), in particular a silver-based one, and at least two antireflection coatings (20, 60), said antireflection coatings each including at least one antireflection layer (24, 26; 66, 68), the functional layer (40) being provided between the two antireflection coatings (20, 60), characterised in that the antireflection coating (60) provided above the functional metal layer (40) opposite the substrate includes at least two antireflection layers (66, 68), wherein the antireflection layer (68) being the farthest from the functional metal layer (40) is more resistive than the antireflection layer (66) being the closest to the functional metal layer (40).
Description
The present invention relates to photronic front substrate, especially transparent glass substrate and relate to the photocell that comprises this substrate.
In photocell, the electro-optical system that has at the photoelectric material of generation electric energy under the incident radiation effect effect is placed between back substrate and the front substrate, and this front substrate is that incident radiation arrives first substrate that passes before the photoelectric material.
In photocell, when the main arrival direction of incident radiation is considered to top-down, this front substrate towards generally include below the first type surface of photoelectric material be positioned at below the transparent electrode coating that electrically contacts of photoelectric material.
The photronic negative terminal of the therefore general formation of this front electrode coating.
Certainly, this photocell also comprises the electrode coating that constitutes the photocell anode subsequently on the orientation substrate overleaf, but the electrode coating of back substrate generally is not transparent.
In the scope of the invention, term " photocell " should be understood to mean any component-assembled part that produces electric current by the solar radiation conversion between its electrode, no matter the size of this assembly how and regardless of the voltage and the intensity of the electric current that generates, particularly no matter whether this component-assembled part has one or more internal electrical connects (series connection and/or in parallel).Therefore " photocell " notion in the meaning of the present invention equals " photovoltaic module " or " photovoltaic panel " in this article.
The material of transparent electrode coating that is usually used in the front substrate is normally based on the material of transparent conductive oxide (English is TCO), for example zinc oxide (ZnO:Al) that mixes based on indium tin oxide (ITO) or based on aluminium or boron doped zinc oxide (ZnO:B) or the tin oxide (SnO that mixes based on fluorine
2: material F).
These materials chemistry depositions, for example CVD (PECVD) that strengthens by chemical vapor deposition (CVD), optional plasma, or physical deposition, for example by cathodic sputtering, sputter (the being magnetron sputtering) vacuum moulding machine that optional magnetic field strengthens.
But, desirable electricity is led or desirable more rightly low resistance in order to obtain, must with about 500 to 1000 nanometers and even higher sometimes big relatively physical thickness deposit the electrode coating of making by TCO substrate material, when they are deposited as the layer of this thickness, consider the cost of these materials, this is expensive.
When sedimentation needed heat supply, this further improved manufacturing cost.
Another major defect of the electrode coating of being made by the TCO sill is the following fact: for selected materials, its physical thickness be all the time the final electricity that obtains lead with the final transparency that obtains between trade off, because physical thickness is high more, conductivity is high more, but transparency is low more, and on the contrary, physical thickness is low more, transparency is high more, but conductivity is low more.
Therefore, use the electrode coating of making by the TCO sill, can not optimize the conductivity and the transparency thereof of electrode coating independently.
Prior art is from the photronic method of International Patent Application WO 01/43204 known manufacturing, wherein transparent electrode coating is not to be made by the TCO sill, but constitute by the stack of thin that is deposited on the positive board main, this coating comprises at least one metal function layer, especially based on the metal function layer of silver, at least two antireflection coatings, each self-contained at least one antireflection layer of described antireflection coatings, described functional layer is arranged between these two antireflection coatings.
The noticeable of this method is that when considering that it enters the incident light direction of battery from the top, it is depositing at least one high refracting layer of being made by oxide or nitride below metal function layer and above the photoelectric material.
The document provides exemplifying embodiment, wherein surround two antireflection coatings of metal function layer, promptly on the orientation substrate be arranged on below the metal function layer antireflection coatings and at the antireflection coatings above the metal function layer of being arranged on of substrate opposite side, each self-contained at least one by high-refraction material, be zinc oxide (ZnO) or silicon nitride (Si in this case
3N
4) layer made.
But this solution can further be improved.
Prior art also discloses U.S. Pat 6169246, it relates to the photocell that has based on the absorbability photoelectric material of cadmium, described power brick is contained in the clear glass front substrate that has transparent electrode coating on the first type surface, and described electrode coating is made up of transparent conductive oxide TCO.
According to the document, will be inserted in by the resilient coating that zinc is made above the TCO electrode coating and below photoelectric material, the part that described resilient coating therefore neither forms the TCO electrode coating does not form the part of photoelectric material again.
Free-revving engine of the present invention is to make electric charge migration between electrode coating and the photoelectric material material of cadmium (especially based on), promptly easily controls and therefore the efficient of this battery improved.
Another important purpose still prepares the transparent electrode coating based on thin layer, and it prepares simple and the preparation on commercial scale is cheap as far as possible.
Therefore theme of the present invention in its widest meaning, is the absorbability photoelectric material that has as claimed in claim 1, especially based on the photocell of the material of cadmium.This battery comprises the front substrate, especially transparent glass substrate, it comprises on first type surface by comprising at least one metal function layer, especially based on the metal function layer of silver, the transparent electrode coating that the stack of thin of at least two antireflection coatings constitutes, each self-contained at least one antireflection layer of described antireflection coatings, described functional layer is arranged between these two antireflection coatings, being characterised in that the antireflection coatings that is arranged on above the metal function layer at the substrate opposite side comprises at least two antireflection layers, is than the most ohmic near the antireflection layer of metal function layer from metal function layer antireflection layer farthest.
The electricalresistivity be multiply by its actual (real) thickness long-pending corresponding to the resistance per square R of this layer.
In advantageous variant of the present invention, the resistivity that has from metal function layer antireflection layer farthest equals at least 5 times even at least 10 times even at least 50 times even at least 100 times even at least 200 times or at least 500 times even at least 1000 times of resistivity of the antireflection layer of the most close metal function layer.
From metal function layer antireflection layer farthest, it is more ohmic, and the electricalresistivity who preferably has is 5 * 10
-3Ω .cm-10 Ω .cm, or 10
-2Ω .cm-5 Ω .cm or 5 * 10
-2Ω .cm-1 Ω .cm.
The antireflection layer of the most close metal function layer, it is a conductivity more, the electricalresistivity who preferably has is 10
-5Ω .cm-5 * 10
-3Ω .cm (end value that does not comprise the back), or 5 * 10
-4Ω .cm-2 * 10
-3Ω .cm, or 10
-4Ω .cm-10
-3Ω .cm.
And, the optical thickness that has from metal function layer antireflection layer farthest preferably accounts for this 2-50% from the total optical thickness of substrate antireflection coatings farthest, and the optical thickness that has especially accounts for from this 2-25% from the total optical thickness of substrate antireflection coatings farthest, even 5-20%.
This preferably have 2-100nm, the actual (real) thickness of preferably 5-50nm, even 10-30nm from this metal function layer antireflection layer farthest.
Antireflection layer preferably based on:
-zinc oxide the ZnO that randomly mixes, as, ZnO Al for example, ZnO:B, or ZnO:Ga;
-tin oxide the SnO that randomly mixes
2, as, SnO for example
2: F;
-titanium dioxide the TiO that randomly mixes
2, as, TiO for example
2: Nb;
-gallium oxide the Ga that randomly mixes
2O
3
-indium oxide the In that randomly mixes
2O
3
-the silicon oxide sio that randomly mixes
2
-or based on mixed oxidization indium tin ITO,
-mixed oxidization gallium zinc GZO,
-mixed oxidization zinc indium IZO,
-mixed oxidization tin zinc Zn
2SnO
4, or
-mixed oxidization zinc indium gallium IGZO,
This oxide randomly is non-stoichiometric.
Preferably usually based on transparent conductive oxide (TCO), it is at least a available from the element in compiling a name list down: Al, Ga for the antireflection layer of the most close metal function layer; Sn, Zn, Sb; In; Cd, Ti, Zr; Ta; W and Mo, especially available from a kind of oxide in these elements of at least a other element doping in these elements, this oxide randomly is substoichiometric oxygen.
Term " doping " is interpreted as here to be illustrated in and has at least a other metallic element in this layer that the atomic ratio of metal (perhaps oxygen element) is 0.5-10%.
Mixed oxide here is the oxide of metallic element, and its every kind metallic element exists with the atomic ratio (eliminating oxygen element) that is higher than 10% metal.
In a kind of specific enforcement modification, the antireflection layer of the most close metal function layer with from metal function layer antireflection layer farthest based on identical oxide, especially based on:
-zinc oxide ZnO;
-tin oxide SnO
2
-titanium dioxide TiO
2
-gallium oxide Ga
2O
3
-indium oxide In
2O
3
-silicon dioxide SiO
2Perhaps
-based on mixed oxidization indium tin ITO,
-mixed oxidization gallium zinc GZO,
-mixed oxidization zinc indium IZO,
-mixed oxidization tin zinc Zn
2SnO
4, perhaps
-mixed oxidization indium gallium zinc IGZO,
This oxide randomly is non-stoichiometric.
The antireflection layer of the most close metal function layer, it is that small electric is resistive, preferably constitutes the ground floor that is arranged on the last antireflection coatings (at this substrate opposite side) above the metal function layer.
From metal function layer antireflection layer farthest, it is more ohmic, preferably constitutes the final layer that is arranged on the last antireflection coatings (at this substrate opposite side) above the metal function layer.Therefore thisly preferably constitute the last layer of electrode coating and therefore it directly contact with photoelectric material from metal function layer antireflection layer farthest.
On the one hand according to electrode coating of the present invention (it in its optics definition, comprises more ohmic last layer especially) with the interface between the photoelectric material material of cadmium (especially based on) is preferably smooth as far as possible on the other hand.
Therefore preferably have 5-250 dust, 15-100 dust, the perhaps surface roughness of 10-50 dust especially from metal function layer antireflection layer farthest.
The absorbed of observing common photoelectricity differs from one another, and the inventor has managed to define the needed important optical signature of stack of thin (being used to form the front electrode coating that is used for solar cell) that is used to limit front explanation type.
The maximum absorption wavelength λ that optical thickness that the antireflection coatings above the metal function layer preferably has approximates this photoelectric material that is arranged at the substrate opposite side
m1/2nd.
At the maximum absorption wavelength λ that optical thickness that the antireflection coatings below the metal function layer preferably has approximates this photoelectric material that is arranged on the orientation substrate
m1/8th.
In an advantageous variant, the maximum absorption wavelength λ of this photoelectric material
mYet use the solar spectrum weighting.In this modification, at the maximum wavelength λ that absorption spectrum that optical thickness that the antireflection coatings above the metal function layer has approximates this photoelectric material multiply by the product of solar spectrum that is arranged on of substrate opposite side
M1/2nd.
Also in this modification, at the maximum wavelength λ that absorption spectrum that optical thickness that the antireflection coatings below the metal function layer has approximates this photoelectric material multiply by the product of solar spectrum that is arranged on the orientation substrate
M1/8.
Preferably, the optical thickness that is arranged on the described antireflection coatings of metal function layer top is the maximum absorption wavelength λ of this photoelectric material
m0.45 to 0.55 times, comprise these endpoint values, preferably, the optical thickness that is arranged on the described antireflection coatings of metal function layer top multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.45 to 0.55 times, comprise these endpoint values.
Preferably, the optical thickness that is arranged on the antireflection coatings of metal function layer below is the maximum absorption wavelength λ of this photoelectric material
m0.075 to 0.175 times, comprise these endpoint values, preferably, the optical thickness that is arranged on the described antireflection coatings of metal function layer below multiply by the maximum wavelength λ of the product of solar spectrum for the absorption spectrum of this photoelectric material
M0.075 to 0.175 times, comprise these endpoint values.
Therefore, according to the present invention, as the maximum absorption wavelength λ of this photoelectric material
mFunction, or preferably multiply by the maximum wavelength λ of the product of solar spectrum as the absorption spectrum of this photoelectric material
MFunction define optimum pathway, to obtain photronic best efficient.
Solar spectrum mentioned in this article is AM 1.5 solar spectrums by the ASTM standard code.
For the present invention, term " coating " should be understood to mean the layer that a plurality of different materials can be arranged in this coating.
For the present invention, " antireflection layer " should be understood that: from the angle of its character, this material is nonmetal, promptly is not metal.In the scope of the invention, this term should be not understood to introduce the restriction to the resistivity of this material, and it can be conductor material (common ρ＜10
-3Ω .cm) or insulating material (common ρ＞10
9Ω .cm) or semi-conducting material (usually in the above two value between).
Fully surprisingly and with other any feature irrespectively, the light path that comprises the electrode coating of the stack of thin with single functional layer can obtain improved photocell efficient, and improve tolerance to the stress that produces in the battery operation process, wherein this lamination has the antireflection coatings that is arranged on metal function layer top, and the optical thickness of this antireflection coatings equals to be arranged on about four times of optical thickness of the antireflection coatings of metal function layer below.
The purpose that centers on the coating of metal function layer is to make this metal function layer " antireflective ".Therefore they are known as " antireflection coatings ".
In fact, although this functional layer can obtain the desirable conductivity for this electrode coating alone, even when little physical thickness (about 10 nanometers), described layer will hinder passing through of light and electromagnetic radiation strongly.
Under the situation that does not have this antireflective system, at this moment transmittance will be low-down, light reflection too strong (in visible light and near infrared ray, making photocell because it relates to).
Term " light path " has specific meanings and the summation of the different optical thickness of (or each) following neighbour of metal function layer of the interference filter that is used to represent make thus and last neighbour's various antireflection coatings in this article.What remind is, the optical thickness of coating equals this layer when having only individual layer in coating physical thickness multiply by the product of the index of its material, or the physical thickness that equals each layer when having multilayer multiply by the summation of product of index of the material of each layer.
Light path according to the present invention is the function of the physical thickness of metal function layer on absolute sense, but in fact, in the physical thickness range of the metal function layer that can obtain desirable conductivity, it is constant.Therefore, when described one or more functional layers based on silver and physical thickness when (comprising these endpoint values) with (having altogether) 5 to 20 nanometers, solution of the present invention is suitable.
The type of stack of thin of the present invention is the glass pane that the thermal insulation with raising of " low-launch-rate (bas-é missif) " and/or " day photocontrol " type is made in known being used in building or automotive glazing field.
Therefore the inventor notices, some lamination that is used for those types of low-emissivity glazing is particularly suitable for making the electrode coating that photocell is used, particularly be known as the lamination of " hardenable " lamination or " to be quenched " lamination, promptly make the substrate of this carrier band lamination stand Quenching Treatment, used those when standing thermal quenching especially and handling in hope.
Therefore, an also theme of the present invention is the stack of thin that is used for architectural glazings, special lamination according to this class of the present invention, it is " hardenable " or " waiting to quench ", especially according to low-launch-rate lamination of the present invention, its particularly the low-launch-rate lamination of " hardenable " or " waiting to quench " be used to make the purposes of photocell front substrate.
Term " hardenable " lamination or substrate should be understood to mean in meaning of the present invention and keep basic optical character and thermal property (representing with the resistance per square directly related with emissivity) in heat treatment process.
Therefore, can for example on the same front of building, will comprise all the quenching substrate that covers with same tier and close to each other setting of glass pane plate of the substrate that do not quench, and can not be distinguished from each other by the simple range estimation of reflection colour and/or light reflection/transmission.
For example, before heat treatment and the substrate that has the lamination of following variation afterwards or be coated with lamination be regarded as hardenable because these variations can not be discovered by naked eyes:
-less than 3% or even less than 2% low transmittance change Delta T
L(visible light); And/or
-less than 3% or even less than 2% low light change of reflection Δ R
L(visible light); And/or
-less than 3 or even less than 2 low change color (in the Lab system)
" to be quenched " lamination or substrate should be understood to mean the substrate through covering in meaning of the present invention optical property and thermal property are acceptable after heat treatment, and they are unacceptable before, or in no case are all acceptable.
For example, do not satisfy before heat treatment having following properties after the heat treatment in these characteristics at least one lamination or the substrate that is coated with lamination in the present invention, be regarded as " to be quenched ":
-at least 65% or even 70% or even at least 75% high transmittance T
L(in visible light); And/or
-be less than or equal to 10% or be less than or equal to 8% or even be less than or equal to 5% low light absorption and (in visible light, pass through 1-T
L-R
LDetermine); And/or
-with the same at least good resistance per square of conductive oxide (r é sistance par carr é) R commonly used
, particularly be less than or equal to 20 Ω/, even be less than or equal to 15 Ω/, even be equal to or less than or equal 10 Ω/.
Therefore, this electrode coating must be transparent.Its therefore after being deposited on the substrate, in 300 to 1200 nanometer wavelength range, must have 65% or even 75%, more preferably 85%, more specifically at least 90% the minimum average B configuration transmittance.
If this front substrate behind the stringer and before it is assembled in the photocell through heat-treated, quenching heat treatment especially, the substrate that is coated with the lamination that serves as electrode coating may have than low transparency before this heat treatment fully.For example, it can have before this heat treatment less than 65% or even less than 50% the transmittance in visible light.
The more important is, this electrode coating was transparent before heat treatment, and after heat treatment, in scope (in visible light) between 300 to 1200 nanometers, have as at least 65%, even 75%, more preferably 85%, or more specifically at least 90% the average light transmission.
In addition, in the scope of the invention, this lamination is not to have best as far as possible transmittance utterly, but has best as far as possible transmittance in photronic background of the present invention.
The antireflection coatings that is arranged on metal function layer below also can have diffusion; particularly to chemical barrier function from the diffusion of the sodium of substrate, thus the guard electrode coating, more special metal function layer; especially in optional heat treatment, especially in the quenching heat treatment process.
In another embodiment, this substrate comprises the bottom antireflection layer (couche antireflet debase) that has with the approaching low refractive index of this substrate low refractive index below electrode coating, described bottom antireflection layer is preferably based on silica or based on aluminium oxide or based on both mixture.
In addition, this dielectric layer can constitute the diffusion chemical barrier layer, particularly from the diffusion barrier of the sodium of substrate; so the guard electrode coating, more special metal function layer is especially in optional heat treatment; especially in the quenching heat treatment process, perhaps be used for the processing of photoelectric material.
In background of the present invention, dielectric layer is not participate in the layer of charge displacement (electric current) or its effect that participates in charge displacement to compare with other layer of this electrode coating and can be regarded as 0 layer.
In addition, this bottom antireflection layer preferably has 10 to 300 nanometers or 35 to 200 nanometers, the more more preferably physical thickness of 50 to 120 nanometers.
This metal function layer can be based on silver, copper or gold, and can choose wantonly by another kind of at least doping the in these elements.
Term "based" is understood to mean in due form and mainly contains this material, promptly contains the layer of at least 50% this material by the mole quality.Therefore term "based" covers and mixes.
The metal function layer preferably is deposited on the thin dielectric layer with crystal form, and this thin dielectric layer is (therefore being known as " wetting layer ", because it promotes the suitable crystalline orientation of deposition metal level thereon) of crystallization preferably also.
Make the preferably single functional layer coating of stack of thin of this electrode coating, promptly have the individual feature layer.Yet it can be the function multilayer, especially the function bilayer.
This functional layer so preferred deposition be based on oxide, especially based on zinc oxide and optional the doping, and optional wetting layer top of being mixed by aluminium, or even directly deposit thereon.
The physics of this wetting layer (or actual) thickness is preferably 2 to 30 nanometers, more preferably 3 to 20 nanometers.
This wetting layer is a dielectric, and be preferably have as 0.5 Ω .cm＜ρ＜200 Ω .cm or as the electricalresistivity of 50 Ω .cm＜ρ＜200 Ω .cm (be meant the resistance per square R of this layer
Multiply by the product of its thickness) material.
This lamination by using the technology of vacuum, carries out a series of preformed depositions as cathodic sputtering (optional magnetic field strengthens) and obtains usually.Also can provide one or even two coatings that are known as " barrier coat " as thin as a wafer; it does not constitute the part of antireflection coatings; be set directly at the below of each metal function layer (especially money base); on top or each face; should serve as bonding in the adjacent coating possible heat treatment process of after deposition, carrying out on the orientation substrate with under this functional layer; nucleation and/or protective finish; with coating adjacent on this functional layer serve as protection or " sacrifices " coating to prevent this metal function layer because disposed thereon layer oxygen invasion and attack and/or migration and undermined; especially in optional heat treatment process; if even layer disposed thereon deposits by the cathodic sputtering in the presence of oxygen, because the infringement of oxygen migration generation.
In meaning of the present invention,, between these two sedimentary deposits, another layer insertion can not be arranged when spelling out layer or coating when directly being deposited on (comprising one or more layers) below of another sedimentary deposit or top.
Preferably, at least one barrier coat is based on Ni or Ti or based on Ni base alloy, especially based on the alloy of NiCr.
Preferably, comprise based on mixed oxide in the coating below the metal function layer on the orientation substrate, especially based on mixed oxidization zinc-tin or mixed oxidization indium tin (ITO) the layer.
In addition, can comprise layer in coating below the metal function layer and/or the coating above the metal function layer on the orientation substrate with high refractive index, especially be greater than or equal to 2 refraction index, for example based on the layer of the silicon nitride that randomly for example mixes with aluminium or zirconium.
In addition,, especially be equal to or higher than 2.35 refraction index, for example based on the layer of titanium oxide comprising layer in the coating below the metal function layer and/or the coating above the metal function layer on the orientation substrate with high refraction index.
This substrate can comprise above electrode coating based on photoelectric material at front substrate opposite side, especially based on the coating of the photoelectric material of cadmium.
Therefore the preferred structure of front of the present invention substrate has following type: substrate/(optional bottom antireflection layer)/electrode coating/photoelectric material, or following type: substrate/(optional bottom antireflection layer)/electrode coating/photoelectric material/electrode coating.
In a particular variant, the lamination that this electrode coating is used by architectural glazings, the lamination used of " hardenable " or " to be quenched " architectural glazings in particular, low-launch-rate lamination especially, especially " hardenable " or " to be quenched " low-launch-rate lamination constitute, and this stack of thin has feature of the present invention.
The invention still further relates to the substrate that photocell of the present invention is used, especially has the substrate that the architectural glazings that is coated with stack of thin of feature of the present invention is used, especially has the substrate that " hardenable " that the architectural glazings of feature of the present invention uses or " to be quenched " architectural glazings are used, low-launch-rate substrate particularly, " hardenable " or " to be quenched " low-launch-rate substrate that especially have feature of the present invention.
All layers of this electrode coating all preferably deposit by evaporating deposition technique, but in no case get rid of this lamination ground floor or preceding which floor can deposit by other technology, for example by the pyrolysis-type pyrolysis technique or pass through CVD, choose wantonly under vacuum, and optional strengthen by plasma.
Advantageously, has the mechanical resistance of electrode coating of the present invention of stack of thin also far above the TCO electrode coating.Therefore, can improve the photronic life-span.
Also advantageously, because its little physical thickness (with comparing) by the electrode of making based on the TCO material, according to the easier etching of electrode with one or more metal function layers of the present invention, especially by laser-induced thermal etching: need lower energy and short vertical separate (be called as " modularization " step) of time to obtain on the whole thickness of this electrode, to carry out usually; And in identical etched width, this etching step causes being compared to by the electrode of making based on the material of TCO material still less to be removed, and has therefore reduced the risk by the material contamination battery that is removed.
Also advantageously, fully can be according to electrode coating of the present invention as the electrode coating at the back side, especially when wishing that at least one fraction incident ray passes completely through photocell.
By outstanding details of the present invention of following non-limiting examples and the favorable characteristics that describes by accompanying drawing, wherein:
-Fig. 1 shows the photocell front substrate of prior art, is coated with the electrode coating of being made by transparent conductive oxide and has the bottom antireflection layer;
-Fig. 2 shows photronic front of the present invention substrate, is coated with the electrode coating that is made of single functional layer stack of thin and has the bottom antireflection layer;
-Fig. 3 shows the quantum efficiency curve of three kinds of photoelectric materials;
-Fig. 4 shows the corresponding actual efficiency curve of product that multiply by solar spectrum with the absorption spectrum of these three kinds of photoelectric materials;
-Fig. 5 shows the principle of photronic endurance test; With
-Fig. 6 shows photronic cross-sectional view.
In Fig. 1,2,5 and 6, for making their easier checking, the ratio between the thickness of different coating, layer and material is not observant.
Fig. 1 show the photocell front substrate 10 of prior art with absorbability photoelectric material 200 ', the transparent electrode coating 100 that described substrate 10 ' comprise on first type surface is made of TCO conductive layer 66 '.
With front substrate 10 ' place photocell so that described front substrate 10 ' be that incident radiation R arrives first substrate that passes before the photoelectric material 200.
Substrate 10 ' also comprise, electrode coating 100 ' below, promptly directly substrate 10 ' on, have the low refractive index n of the refraction index that approaches this substrate
22 Bottom antireflection layer 22.
Substrate 10 ' further can comprise, electrode coating 100 ' on and photoelectric material 200 times, the resilient coating (not shown).
Fig. 2 shows photocell of the present invention front substrate 10.
The stack of thin of the transparent electrode coating 100 of pie graph 2 is laminated construction of the laminated construction type of low-launch-rate substrate, and optional is hardenable or to be quenched, and has single functional layer, as in the commercial architectural glazings field that can be used for building.
Based on shown in have single functional layer laminated construction make two embodiment, be numbered 1 and 2:
-for the embodiment 1 of Fig. 1; With
-for the embodiment 2 of Fig. 2,, this lamination do not go up coating (rev ê tement desur-blocage) except not containing to intercept.
In addition, in following all embodiment, described be deposited upon the substrate 10 made by the bright soda-lime glass of 4 millimeters of thickness ', on 10.
Index given below is measured when the 550nm wavelength.
The zinc oxide of the electrode coating 100 of embodiment 1 ' mix based on the aluminium of conduction.
The lamination that constitutes the electrode coating 100 of embodiment 2 is made of stack of thin, and this stack of thin comprises in the following sequence:
-antireflection layer 24, it is based on the dielectric layer of titanium oxide, index n=2.4;
-antireflection layer 26, it is based on the wetting layer of oxide, especially based on zinc oxide, randomly mixes dielectric, index n=2;
-randomly, following adjacent barrier coat (indicate) for example based on Ti or based on the NiCr alloy, can be set directly at functional layer 40 belows but not provide herein; If there is not wetting layer 26, this coating normally needs, but is not absolutely necessary;
Therefore the single functional layer 40 of-silvery is set directly on the wetting coating 26 herein;
-can be set directly on the functional layer 40 based on Ti or based on the last adjacent barrier coat 50 of NiCr alloy, but do not provide in these embodiments;
-have the conduction antireflection layer 66 of index n=2 based on the zinc oxide of adulterated al, and its resistivity is 0.35 * 10
-3Ω .cm-2.5 * 10
-3Ω .cm, especially almost about 10
-3Ω .cm, this layer here directly is deposited on the functional layer 40 from ceramic target (being made up of about 2% aluminium, 49% zinc and 49% oxygen) under argon atmospher; Then
-dielectric termination layer 68, it is antireflecting and based on the zinc-tin oxide Sn of index n=2.1
xZn
yO
z, having the resistivity of about 1 Ω .cm, this layer is here by 25% oxygen (O
2) and the atmosphere formed of 75% argon gas under deposit from metallic target (forming) by about 50% tin and 50% zinc.
Should be noted that, layer based on the mixed oxidization zinc-tin can have variable Sn on their whole thickness: Zn ratio or variable dopant percentage, this depends on the target that is used to deposit these layers, and is especially true when a plurality of different targets of forming are used for sedimentary deposit especially.
In this embodiment, photoelectric material 200 is based on cadmium telluride.
The quantum efficiency QE of this material is illustrated in Fig. 3 with quantum efficiency, other also suitable within the scope of the invention photoelectric material of microcrystal silicon (the about 100nm of its crystalline size) and amorphous (promptly uncrystallized) silicon.
In this prompting is that quantum efficiency QE such as known the expression have the probability (0 to 1) that is converted to electron-hole pair along the incident photon of the wavelength of abscissa.
In Fig. 3 as can be seen, maximum absorption wavelength λ
m, i.e. wavelength during quantum efficiency maximum (promptly being in its peak):
-amorphous silicon a-Si, i.e. λ
mA-Si is 520 nanometers;
-microcrystal silicon μ c-Si, i.e. λ
mμ c-Si is 720 nanometers; And
-cadmium telluride CdTe, i.e. λ
mCdTe is 600 nanometers.
Under the first approximation of the light path of this lamination, this maximum absorption wavelength λ
mBe enough.
Has the maximum absorption wavelength λ that approximates this photoelectric material greatly so at the antireflection coatings 20 that is arranged on below the metal function layer 40 on the orientation substrate
m1/8 optical thickness, have the maximum absorption wavelength λ that approximates this photoelectric material greatly so at the antireflection coatings 60 that is arranged on above the metal function layer 40 of substrate opposite side
m1/2 optical thickness.
Following table 1 has been summarized for each coating 20,60, according to the preferable range in the optical thickness of nanometer of these three kinds of materials.
Table 1
But, have been found that and can improve the optics definition of this lamination by considering quantum efficiency (to obtain improved actual recovery) by this probability is carried out convolution (convoluant) with the sunlight wavelength distribution on the face of land.At this, we use normalization solar spectrum AM1.5.
In this case, the absorption spectrum that approximates this photoelectric material greatly at the optical thickness that is arranged on the antireflection coatings 20 below the metal function layer 40 on the orientation substrate multiply by the maximum wavelength λ of the product of solar spectrum
M1/8 and multiply by the maximum wavelength λ of the product of solar spectrum at the absorption spectrum that the optical thickness that is arranged on the antireflection coatings 60 above the metal function layer 40 of substrate opposite side approximates this photoelectric material greatly
M1/2.
As among Fig. 4 as can be seen, the absorption spectrum of this photoelectric material multiply by the maximum wavelength λ of the product of solar spectrum
M, i.e. wavelength during efficient maximum (being peak):
-amorphous silicon a-Si, i.e. λ
MA-Si is 530 nanometers;
-microcrystal silicon μ c-Si, i.e. λ
Mμ c-Si is 670 nanometers; And
-cadmium telluride CdTe, i.e. λ
MCdTe is 610nm.
Following table 2 has been summarized the preferable range in the optical thickness of nanometer of each coating 20,60 according to these three kinds of materials.
Table 2
In all embodiments, the direct bottom antireflection layer 22 that on substrate, has deposited based on silica.Because its refraction index n
15Low and near the refraction index of substrate, in the definition of the light path of lamination of the present invention, do not consider its optical thickness.
The sedimentary condition of these layers is well known by persons skilled in the art, because it relates to the similar lamination of those layers that obtains and be used for low-launch-rate or day photocontrol application.
In this respect, those skilled in the art can referenced patent application EP 718 250, EP 847965, EP 1 366 001, EP 1 412 300 or EP 722 913.
Following table 3 summarized among the embodiment 1 and 2 each the material of each layer and the physical thickness that records with nanometer, table 4 is listed the key property of these embodiment.
By so-called " TSQE " method calculated performance feature P, use the product of the quantum efficiency QE of spectrum integral in the whole radiation scope of considering and battery in the method.
Light reflectance signature R
LUnder light source D65, measure.
All embodiment 1 and 2 are imposed according to the test of measurement electrode coating of carrying out shown in Figure 5 to the tolerance of the stress of (especially in the presence of electrostatic field) generation in the battery operation process.
Be used for this test, substrate film 10,10 ' (for example 5 cm x are 5 centimetres, and be coated with respectively electrode coating 100,100 ', but do not have photoelectric material 200) be deposited on the metallic plate 5 that places on about 200 ℃ of thermals source 6.
This test relate to be coated with electrode coating 100,100 ' substrate 10,10 ' applied electric field 20 minutes, it is by carrying out making electric contact 102 on the described coating surface and this contact 102 and metallic plate 5 be connected on the terminal of carrying the galvanic power supply 7 of about 200V.
When this off-test, in case, on the whole surface of sample, measure the residual stratum proportion that is coated with the sample cooling.
This ratio of the coating that stays behind the tolerance test is represented as PRT.
And, with aforementioned test irrespectively, embodiment 2 is through heat-treated (TT), this heat treatment was included under about 620 ℃ temperature annealing 6 minutes, quench cooled in surrounding air (20 ℃) is simulated hardening step then.The data of measuring after this heat treatment are shown in the last hurdle of table 4.Therefore the heat treatment that applies is (sollicitant) that stress is more arranged than the common heat treatment that is stood by electrode coating (in the scope that is used to deposit based on the method for the photoelectricity coating of cadmium).
Table 3
| Layer/material | Embodiment 1 | Embodiment 2 |
| 200：CdTe | 5000 | 5000 |
| 68：Sn xZn yO z | 10 | |
| 66：ZnO:Al | 135 | |
| 64：ZnO:Al | 1020 | |
| 40： |
7 | |
| 26： |
7 | |
| 24：TiO 2 | 27 | |
| 22：SiO 2 | 110 | 110 |
Table 4
In embodiment 2, the optical thickness of the coating 60 on the metal function layer is that the optical thickness of 291nm (=135 * 2+10 * 2.1) and the coating 20 under this metal function layer is 78.8nm (=27 * 2.4+7 * 2).
This embodiment shows, can obtain to be constituted and be coated with by stack of thin the electrode coating of cadmium telluride, and it is compared with the TCO electrode coating that is coated with same material (embodiment 1) has better resistance per square R
(2.6 ohm/) and better performance P (+0.2%).According to table 1 and table 2, the coating 20 of embodiment 2 and 60 optical thickness are in the scope of being recommended for the photoelectric material of being made by CdTe 200.
Use is based on the photoelectric material of cadmium, the photoelectric material of the alloy of CdTe and CdS needs this electrode coating to withstand heat treatment especially, because the processing of this photoelectric material need be in the step of 300 ℃ of-700 ℃ of temperature, it carries out in controlled nonoxidizing atmosphere usually.
Surprisingly, find that this step is quite similar with the quenching step of the glass substrate that is used for the vehicles or building as known to persons skilled in the art, even usually should quenching atmosphere not controlled.
Therefore, when this photoelectric material during based on cadmium, advantageously select to become known for the stack of thin that vehicle or building are used especially, it is anti-quenching heat treatment, is called as " hardenable " lamination or " to be quenched " lamination.
Therefore, find that for embodiment 2 data variation during the heat treatment that applies is slight.Therefore selected lamination can be considered to " hardenable ".
And, notice that advantageously the stack of thin (not having photoelectric material) that forms electrode coating within the scope of the invention is before heat treatment and all have the light reflection lower than the TCO electrode coating that does not have photoelectric material afterwards.
The photocell 1 that has front of the present invention substrate 10 (incident radiation R penetrates this front substrate) and have back substrate 20 of Fig. 6 show cross section plane view.
For example by amorphous silicon or crystallization or microcrystal silicon or cadmium telluride or two copper indium diselenide (CuInSe
2Or CIS) or the photoelectric material 200 made of Copper Indium Gallium Selenide be arranged between these two substrates.It is made of the semiconductor material layer 240 that the semiconductor material layer 220 and the p-of n-doping mix, and produces electric current.Insert between the semiconductor material layer 220 that front substrate 10 and n-on the one hand mix respectively and on the other hand the semi-conducting material 240 that mixes of p-and the electrode coating 100,300 between the back substrate 20 finished should the electricity structure.
The present invention has above been described for example.Certainly, those skilled in the art can make various modification of the present invention under the situation that does not break away from the claim of determining as claims thus.
Claims (24)
1. has the absorbability photoelectric material, especially based on the photocell (1) of the absorbability photoelectric material of cadmium, described battery comprises front substrate (10), especially transparent glass substrate, it comprises on first type surface by comprising at least one metal function layer (40), especially based on the metal function layer of silver, at least two antireflection coatings (20,60) transparent electrode coating (100) that stack of thin constitutes, each self-contained at least one antireflection layer (24,26 of described antireflection coatings; 66,68), make described functional layer (40) be arranged on this two antireflection coatings (20,60) between, it is characterized in that comprising at least two antireflection layers (66 at the antireflection coatings (60) that is arranged on metal function layer (40) top of substrate opposite side, 68) be than the most ohmic, near the antireflection layer (66) of metal function layer (40) from metal function layer (40) antireflection layer (68) farthest.
2. photocell as claimed in claim 1 (1) is characterised in that the resistivity that has from metal function layer (40) antireflection layer (68) farthest equals at least 5 times even at least 10 times even at least 100 times of resistivity of the antireflection layer (66) of the most close metal function layer (40).
3. photocell as claimed in claim 1 or 2 (1) is characterized in that having 5 * 10 from metal function layer (40) antireflection layer (68) farthest
-3The electricalresistivity of Ω .cm to 10 Ω .cm.
4. as each described photocell (1) of claim 1-3, it is characterized in that having 10 near the antireflection layer (66) of metal function layer (40)
-5Ω .cm-5 * 10
-3The electricalresistivity of Ω .cm does not comprise the end value of this back.
5. as each described photocell (1) of claim 1-4, it is characterized in that near the antireflection layer (66) of metal function layer (40) with from metal function layer (40) antireflection layer (68) farthest based on identical oxide, especially based on zinc oxide ZnO, tin oxide SnO
2, titanium dioxide TiO
2, gallium oxide Ga
2O
3, indium oxide In
2O
3, silicon oxide sio
2, perhaps based on mixed oxidization indium tin ITO, mixed oxidization gallium zinc GZO, mixed oxidization zinc indium IZO, mixed oxidization tin zinc Zn
2SnO
4, mixed oxidization zinc indium gallium IGZO, this oxide randomly is non-stoichiometric
6. as each described photocell (1) of claim 1-5, it is characterized in that accounting for this 2-50%, and optical thickness accounts for from this 2-25% from the total optical thickness of substrate antireflection coatings (60) farthest especially from the optical thickness of substrate antireflection coatings (60) farthest from the optical thickness that metal function layer (40) antireflection layer (68) farthest has.
7. as each described photocell (1) of claim 1-6, it is characterized in that thisly having 2-100nm, preferably the actual (real) thickness of 5-50nm from this metal function layer (40) antireflection layer (68) farthest.
8. as each described photocell (1) of claim 1-7, it is characterized in that optical thickness that the antireflection coatings (60) that is arranged on metal function layer (40) top at the substrate opposite side has approximates the maximum absorption wavelength λ of this photoelectric material
m1/2nd, preferably the optical thickness that has at the antireflection coatings (60) that is arranged on metal function layer (40) top of the substrate opposite side absorption spectrum that approximates this photoelectric material multiply by the maximum wavelength λ of the product of solar spectrum
M1/2nd.
9. as each described photocell (1) of claim 1-8, it is characterized in that being arranged on optical thickness that the described antireflection coatings (60) of metal function layer (40) top has maximum absorption wavelength λ for this photoelectric material
m0.45 to 0.55 times, comprise these endpoint values, preferably, be arranged on optical thickness that the described antireflection coatings (60) of metal function layer (40) top has multiply by the product of solar spectrum for the absorption spectrum of this photoelectric material maximum wavelength λ
M0.45 to 0.55 times, comprise these endpoint values.
10. as each described photocell (1) of claim 1-9, it is characterized in that optical thickness that the antireflection coatings (20) that is arranged on metal function layer (40) below on orientation substrate has approximates the maximum absorption wavelength λ of this photoelectric material
m1/8, preferably the optical thickness that has of the antireflection coatings (20) that is arranged on metal function layer (40) below on the orientation substrate absorption spectrum that approximates this photoelectric material multiply by the maximum wavelength λ of the product of solar spectrum
M1/8.
11., it is characterized in that being arranged on optical thickness that the described antireflection coatings (20) of metal function layer (40) below has maximum absorption wavelength λ for this photoelectric material as each described photocell (1) of claim 1-10
m0.075 to 0.175 times, comprise these endpoint values, preferably, be arranged on optical thickness that the described antireflection coatings (20) of metal function layer (40) below has multiply by the product of solar spectrum for the absorption spectrum of this photoelectric material maximum wavelength λ
M0.075 to 0.175 times, comprise these endpoint values.
12. as each described photocell (1) of claim 1-11, it is characterized in that electrode coating (100) directly comprises bottom antireflection layer (22) on described substrate (10), this reflector has the low refractive index n that approaches this substrate refraction index
22, described bottom antireflection layer (22) is preferably based on silica or based on aluminium oxide or based on this mixture of two kinds.
13. photocell as claimed in claim 12 (1) is characterized in that the physical thickness that this bottom antireflection layer (22) has 50 to 300 nanometers.
14. as each described photocell (1) of claim 1-13, it is characterized in that functional layer (40) is deposited on based on oxide, especially based on zinc oxide, the top of the wetting layer of Can Zaing (26) randomly.
15., it is characterized in that metal function layer (40) is set directly at least one and descends on adjacent barrier coat (30) and/or be set directly to go up under the adjacent barrier coat (50) as each described photocell (1) of claim 1-14.
16., it is characterized in that at least one barrier coat (30,50) is based on Ni or Ti or based on Ni base alloy, especially based on the NiCr alloy as each described photocell (1) of claim 1-15.
17. as each described photocell (1) of claim 1-16, it is characterized in that comprising based on mixed oxide in the coating below the metal function layer (20) on the orientation substrate, especially based on mixed oxidization zinc-tin (ZTO) or mixed oxidization indium tin (ITO) the layer.
18. as each described photocell (1) of claim 1-17, it is characterized in that having high refraction index comprising in the coating below the metal function layer (20) and/or the coating above the metal function layer (60) on the orientation substrate, especially be equal to or higher than the layer of 2.35 refraction index, as, for example based on titanium oxide the layer.
19. as each described photocell (1) of claim 1-18, it is characterized in that it comprises based on photoelectric material in electrode coating (100) top at substrate (10) opposite side, especially based on the coating (200) of the photoelectric material of cadmium.
20. as each described photocell (1) of claim 1-21, it is characterized in that described electrode coating (100) is by the lamination that is used for architectural glazings, be particularly useful for the lamination of the architectural glazings of " hardenable " or " waiting to quench ", especially the low-launch-rate lamination of low-launch-rate lamination, particularly " hardenable " or " waiting to quench " is formed.
21. be used for the substrate that is coated with stack of thin (10) as each described photocell (1) of claim 1-22, be particularly useful for the substrate of architectural glazings, be particularly useful for the substrate of the architectural glazings of " hardenable " or " waiting to quench ", low-launch-rate substrate, especially the low-launch-rate substrate of " hardenable " or " waiting to quench " especially.
Be used to obtain photocell (1) 22. be coated with the substrate of stack of thin, especially as the purposes of the front substrate (10) of each described photocell (1) of claim 1-20, described substrate comprises by comprising at least one metal function layer (40), especially based on the metal function layer of silver, at least two antireflection coatings (20,60) transparent electrode coating (100) that stack of thin constitutes, each self-contained at least one antireflection layer (24,26 of described antireflection coatings; 66,68), make described functional layer (40) be arranged on this two antireflection coatings (20,60) between, the antireflection coatings (60) that is arranged on metal function layer (40) top at the substrate opposite side comprises at least two antireflection layers (66,68) be than the most ohmic, near the antireflection layer (66) of metal function layer (40) from metal function layer (40) antireflection layer (68) farthest.
23. purposes as claimed in claim 22, the substrate (10) that wherein comprises electrode layer (100) is the substrate that is used for architectural glazings, be particularly useful for the substrate of the architectural glazings of " hardenable " or " waiting to quench ", low-launch-rate substrate, especially the low-launch-rate substrate of " hardenable " or " waiting to quench " especially.
24. as claim 22 or 23 described purposes, wherein the optical thickness that has at the antireflection coatings (60) that is arranged on metal function layer (40) top of substrate opposite side approximate this photoelectric material maximum absorption wavelength 1/2nd.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0851003 | 2008-02-18 | ||
| FR0851003A FR2919114B1 (en) | 2007-07-16 | 2008-02-18 | PHOTOVOLTAIC CELL AND PHOTOVOLTAIC CELL SUBSTRATE |
| PCT/FR2009/050252 WO2009103929A2 (en) | 2008-02-18 | 2009-02-17 | Photovoltaic cell and substrate for photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102007562A true CN102007562A (en) | 2011-04-06 |
Family
ID=40990193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801136218A Pending CN102007562A (en) | 2008-02-18 | 2009-02-17 | Photovoltaic cell and substrate for photovoltaic cell |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP2255372A2 (en) |
| JP (1) | JP2011512665A (en) |
| KR (1) | KR20100119871A (en) |
| CN (1) | CN102007562A (en) |
| BR (1) | BRPI0907513A2 (en) |
| MX (1) | MX2010008809A (en) |
| WO (1) | WO2009103929A2 (en) |
| ZA (1) | ZA201005723B (en) |
Cited By (5)
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| CN102997156A (en) * | 2012-12-10 | 2013-03-27 | 河南少林汽车股份有限公司 | Heat radiation type LED (Light-Emitting Diode) headlamp of heat pipe for automobile |
| CN104379806A (en) * | 2012-03-16 | 2015-02-25 | 皮尔金顿集团有限公司 | Chemical vapor deposition process for depositing zinc oxide coatings, method for forming a conductive glass article and the coated glass articles produced thereby |
| CN108987491A (en) * | 2013-03-12 | 2018-12-11 | Vitro可变资本股份有限公司 | Photovoltaic cell with anti-reflection coating |
| CN112599614A (en) * | 2020-12-25 | 2021-04-02 | 中建材蚌埠玻璃工业设计研究院有限公司 | CdTe thin-film solar cell with adjustable reflection spectrum |
| CN112635585A (en) * | 2020-12-25 | 2021-04-09 | 中建材蚌埠玻璃工业设计研究院有限公司 | Colorful CIGS thin-film solar cell and preparation method thereof |
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| DE102009044052A1 (en) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Crystalline solar cell, process for producing the same and process for producing a solar cell module |
| GB201011729D0 (en) | 2010-07-13 | 2010-08-25 | Pilkington Group Ltd | Transparent front electrode for a photovoltaic device |
| US8808882B2 (en) | 2010-09-17 | 2014-08-19 | Guardian Industries Corp. | Coated article having boron doped zinc oxide based seed layer with enhanced durability under functional layer and method of making the same |
| US8815420B2 (en) * | 2010-09-17 | 2014-08-26 | Guardian Industries Corp. | Coated article having zinc oxide seed layer with reduced stress under functional layer and method of making the same |
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| DE102011080009A1 (en) * | 2011-07-28 | 2013-01-31 | Robert Bosch Gmbh | Thin film solar cell |
| KR101814814B1 (en) * | 2011-09-16 | 2018-01-04 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| FR2984609A1 (en) * | 2011-12-20 | 2013-06-21 | Saint Gobain | Conducting substrate/photoactive dye laser assembly for photovoltaic cell, has conducting layer including substrate, and coating electrode including homogeneous silver layer, where source of contact of substrate has specific roughness |
| KR101574456B1 (en) * | 2012-01-10 | 2015-12-11 | 쌩-고벵 글래스 프랑스 | Transparent panel with electrically conductive coating |
| KR101449097B1 (en) * | 2012-04-05 | 2014-10-10 | 엘지이노텍 주식회사 | Solar cell |
| CN102751336A (en) * | 2012-06-29 | 2012-10-24 | 苏州嘉言能源设备有限公司 | TiO2-X antireflective film used for groove-type solar thermal collector |
| FR3110160B1 (en) * | 2020-05-12 | 2023-10-27 | Saint Gobain | Low emissive material comprising a thick layer based on silicon oxide |
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| US4528418A (en) * | 1984-02-24 | 1985-07-09 | Energy Conversion Devices, Inc. | Photoresponsive semiconductor device having a double layer anti-reflective coating |
| US5510271A (en) * | 1994-09-09 | 1996-04-23 | Georgia Tech Research Corporation | Processes for producing low cost, high efficiency silicon solar cells |
| US5907766A (en) * | 1996-10-21 | 1999-05-25 | Electric Power Research Institute, Inc. | Method of making a solar cell having improved anti-reflection passivation layer |
| DE19958878B4 (en) * | 1999-12-07 | 2012-01-19 | Saint-Gobain Glass Deutschland Gmbh | Thin film solar cell |
-
2009
- 2009-02-17 MX MX2010008809A patent/MX2010008809A/en active IP Right Grant
- 2009-02-17 WO PCT/FR2009/050252 patent/WO2009103929A2/en active Application Filing
- 2009-02-17 BR BRPI0907513-5A patent/BRPI0907513A2/en not_active IP Right Cessation
- 2009-02-17 CN CN2009801136218A patent/CN102007562A/en active Pending
- 2009-02-17 EP EP09713430A patent/EP2255372A2/en not_active Withdrawn
- 2009-02-17 JP JP2010546386A patent/JP2011512665A/en active Pending
- 2009-02-17 KR KR1020107018225A patent/KR20100119871A/en not_active Application Discontinuation
-
2010
- 2010-08-11 ZA ZA2010/05723A patent/ZA201005723B/en unknown
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104379806A (en) * | 2012-03-16 | 2015-02-25 | 皮尔金顿集团有限公司 | Chemical vapor deposition process for depositing zinc oxide coatings, method for forming a conductive glass article and the coated glass articles produced thereby |
| CN104379806B (en) * | 2012-03-16 | 2017-06-09 | 皮尔金顿集团有限公司 | Chemical vapor deposition method for depositing zinc oxide coatings, the method for forming conductive glass articles and the coated glass article being thus made |
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Also Published As
| Publication number | Publication date |
|---|---|
| ZA201005723B (en) | 2011-04-28 |
| BRPI0907513A2 (en) | 2015-07-21 |
| WO2009103929A3 (en) | 2009-12-23 |
| JP2011512665A (en) | 2011-04-21 |
| MX2010008809A (en) | 2010-11-10 |
| WO2009103929A2 (en) | 2009-08-27 |
| KR20100119871A (en) | 2010-11-11 |
| EP2255372A2 (en) | 2010-12-01 |
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