CN213845285U - Front electrode for thin-film solar cell capable of realizing multiple colors - Google Patents
Front electrode for thin-film solar cell capable of realizing multiple colors Download PDFInfo
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- CN213845285U CN213845285U CN202023177530.3U CN202023177530U CN213845285U CN 213845285 U CN213845285 U CN 213845285U CN 202023177530 U CN202023177530 U CN 202023177530U CN 213845285 U CN213845285 U CN 213845285U
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Abstract
The utility model discloses a can realize multiple colour's front electrode for thin-film solar cell, including glass substrate s, its characterized in that, the window layer comprises TCO transparent conductive film F1, interface film F2 layer, metal transparent conductive film F3 layer, interface film F4 layer, the compound stack of TCO transparent conductive film F5 in proper order. The preparation method comprises the following steps: 1. taking the high-resistance layer as a starting point; 2. depositing a TCO transparent conductive film F1 on the top surface of the high-resistance layer by adopting a magnetron sputtering process; 3. depositing an interfacial film F2 layer atop the F1 layer; 4. depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer; 5. depositing an interfacial film F4 layer atop the F3 layer; 6. a TCO transparent conductive film F5 was deposited on top of the F4 layer. The front electrode for the color thin-film solar cell is obtained, so that the cell structure can carry colors, and the overall structure and performance of the thin-film solar cell are guaranteed.
Description
Technical Field
The utility model relates to a thin-film solar cell technical field specifically is can realize the front electrode for thin-film solar cell of multiple colour.
Background
The thin film solar cell is one of the most promising solar cells recognized internationally, because of its advantages such as excellent overall power generation efficiency and easy integration with buildings.
With the rapid reduction of the cost of a photovoltaic industry chain in recent years, the photovoltaic industry is enabled to move from a photovoltaic power station to the fields of BIPV, new energy automobiles, household power generation, smart agriculture, electronic products and the like, brand-new energy is combined with other industries to present strong advantages and development potentials, the photovoltaic industry moves from policy dependence to the non-subsidy era, and the spontaneous market demand rises to open a wide space for the development of the photovoltaic industry.
The traditional method is only single black, the installation of colorful BIPV can not only solve the difficult problem of energy conservation and emission reduction, but also improve the external image of the building, so that the building is more in line with the aesthetic beauty of commercial buildings, and the fields of new energy automobiles, household power generation, intelligent agriculture, electronic products and the like also need photovoltaic products with diversity, so that the building is more distinctive for improving the overall brand image of enterprises. Therefore, high conversion ratio solar modules of various colors are demanded in the market.
At the present stage, the installation of colors is mainly the natural color of the thin film solar cell combined with glass, and colored BIPV in the market is characterized in that a single-layer or multi-layer colored functional layer is added inside or outside a thin film solar cell cover plate or a chemical coloring method is adopted, so that the manufacturing steps are obviously increased, the cost is improved, and the photoelectric conversion efficiency of the cell is lost; the utility model discloses the front electrode structural layer that will give thin-film solar cell itself has the color, ensures thin-film solar cell's wholeness ability simultaneously.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a can realize the front electrode for thin-film solar cell of multiple colour, its itself can realize carrying the colour, and the colour is easily adjusted to can realize multiple colour, ensure thin-film solar cell's overall structure and performance simultaneously.
The utility model provides a technical scheme that its technical problem adopted is:
the front electrode for the thin-film solar cell capable of realizing multiple colors comprises a glass substrate and is characterized in that a composite superposed layer provided with a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 layer is sequentially arranged on the glass substrate.
Further, the thickness of the TCO transparent conductive film F1 layer and the TCO transparent conductive film F5 layer is 20-70 nm;
further, the thickness of the interface film F2 layer and the interface film F4 layer is 1 to 5 nm.
Furthermore, the thickness of the metal transparent conductive film F3 layer is 3-25 nm.
Each thin layer in the technical scheme of the invention can be manufactured by adopting the existing magnetron sputtering process.
The mechanism of the above technical scheme of the utility model is as follows:
1. according to the theory of thin film interference, when the thickness of the film is equal to 1/4 of the wavelength of the incident light in the medium, the optical path of the reflected light on the two surfaces of the film is exactly equal to half the wavelength, so that the light is interfered and counteracted, the reflection loss of the light is greatly reduced, the intensity of the transmitted light is enhanced, and the antireflection effect is achieved. The proper refractive index n and thickness d of the film are selected to play a good role in anti-reflection. Therefore, each layer of the nano-multilayer film exerts its advantages by utilizing the high conductivity of the metal film and the antireflection action of the transparent film. Therefore, the TCO transparent conductive film F1 layer, the metal transparent conductive film F3 layer and the TCO transparent conductive film F5 layer have excellent structural electrical properties, and have an anti-reflection effect and high light transmittance.
2. Since the TCO transparent conductive film F1 and F5 layers with different compositions have different refractive indexes and are combined with the metal transparent conductive film F3 layer with different compositions, the multilayer interference stack changes the reflection spectrum of the composite film, so that the cell can present various color appearances.
3. Since the TCO transparent conductive films F1 and F5 with different film thicknesses are combined with the metal transparent conductive film F3 with different film thicknesses, the refractive index is changed, the reflection spectrum of the front electrode can be adjusted after interference stacking, and the cell can present various color appearances.
4. S3 interfacial film F2 layer: 1. the protective effect is achieved, the TCO transparent conductive film F1 layer is isolated from the metal transparent conductive film F3 layer, and the metal film is prevented from being oxidized by the TCO film to influence the conductivity; 2. the buffer layer is grown under the metal layer, which is beneficial to the growth of the metal film and the improvement of the optical characteristic.
5. The S4 metal transparent conductive film F3 is small in thickness, so that the film has high conductivity and light transmittance, the overall conductivity of the front electrode is improved, and the transmission of current carriers is facilitated.
6. Interfacial film F4 layer: 1. the protective effect is achieved, the TCO transparent conductive film F1 layer is isolated from the metal transparent conductive film F3 layer, and the metal film is prevented from being oxidized by the TCO film to influence the conductivity; 2. the buffer layer is grown on the metal layer, so that the thin island-shaped growth discontinuity of the metal film is prevented, and the buffer layer is favorable for the growth of the metal film and the improvement of the optical characteristic.
The utility model has the advantages that:
1. so that the battery can exhibit a desired color appearance.
2. The prior front electrode mainly adopts an AZO film, the thickness of the AZO film is as high as 1200nm, so that the better photoelectric performance index can be realized, a large amount of high-purity Zn and Al materials are required to be consumed, the manufacturing cost is higher, and the coating time is longer. The total thickness of the front electrode prepared by the utility model is less than or equal to 175nm, which can be obtained at room temperature, the coating time is shortened, and the manufacturing cost is reduced.
3. The TCO transparent conductive film F1 layer, the metal transparent conductive film F3 layer and the TCO transparent conductive film F5 layer have excellent structural electrical properties, have an anti-reflection effect and high light transmittance, and improve the overall conductivity of the front electrode.
Drawings
The invention will be further described with reference to the following figures and examples:
fig. 1 is a schematic structural view of a colored front electrode prepared by the present invention.
Fig. 2 shows a light blue thin-film solar cell front electrode sample and a transmission spectrum in embodiment 1 of the present invention.
Fig. 3 is a light gray thin film solar cell front electrode sample and a transmission spectrum in embodiment 2 of the present invention.
Fig. 4 shows a green thin-film solar cell front electrode sample and a transmission spectrum according to embodiment 3 of the present invention.
Detailed Description
The front electrode for the thin-film solar cell capable of realizing multiple colors comprises a glass substrate, wherein the glass substrate is sequentially laminated by compounding a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5.
Further, the thickness of the TCO transparent conductive film F1 layer and the TCO transparent conductive film F5 layer is 20-70 nm;
further, the thickness of the interface film F2 layer and the interface film F4 layer is 1 to 5 nm.
Furthermore, the thickness of the metal transparent conductive film F3 layer is 3-25 nm.
Example one
As shown in fig. 1, the utility model provides a preparation method of a front electrode for a thin-film solar cell, which can realize multiple colors, comprising the following steps:
s1, taking ultra-white float glass as a glass substrate S, removing dirt on the surface of the glass substrate, and activating the surface of the glass substrate;
the method specifically comprises the following steps: adopting an ion source sputtering method, introducing Ar gas with the flow rate of 35sccm, bombarding the glass substrate S, and controlling the working pressure to be 0.6Pa, the power to be 50W and the time to be 30 min;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is an AZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, AZO target (Al)2O3: ZnO =1.5% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S; the working pressure is 0.3-0.5 Pa, the power is 150-250W, and the thickness of a deposited F1 layer is 30 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is a NiCr film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method and an NiCr target, introducing Ar gas flow of 55sccm, and depositing an interface film F2 layer on the top surface of F1; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F2 layer is 3 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Al film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method, introducing Ar gas into an Al target with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.8Pa, the power is 30W, and the thickness of the deposited F3 layer is 20 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is a NiCr film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method and an NiCr target, introducing Ar gas flow of 55sccm, and depositing an interface film F4 layer on the top surface of F3; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F4 layer is 3 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is an AZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, AZO target (Al)2O3: ZnO =1.5% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F5 layer on the top surface of F4; the working pressure is 0.3-0.5 Pa, the power is 150-250W, and the thickness of a deposited F5 layer is 30 nm;
finally, a light blue thin film solar cell front electrode is obtained, and the result is shown in figure 2.
Example two
As shown in fig. 1, the utility model provides a preparation method of a front electrode for a thin-film solar cell, which can realize multiple colors, comprising the following steps:
s1, taking ultra-white float glass as a glass substrate S, removing dirt on the surface of the glass substrate, and activating the surface of the glass substrate;
the method specifically comprises the following steps: adopting an ion source sputtering method, introducing Ar gas with the flow rate of 35sccm, bombarding the glass substrate S, and controlling the working pressure to be 0.6Pa, the power to be 50W and the time to be 30 min;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is an ITO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, a GZO target (Ga)2O3: ZnO =0.5% to 1.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S; the working pressure is 0.1-0.3 Pa, the power is 100-200W, and the thickness of a deposited F1 layer is 45 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is a ZnO film with insufficient oxygen;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Zn target and introducing O2Depositing an interface film F2 layer on the top surface of F1 with the gas flow of 5sccm and the Ar gas flow of 55 sccm; the working pressure is 0.8Pa, the power is 10W, and the thickness of the deposited F2 layer is 2 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is an Ag film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method, introducing Ar gas into an Ag target with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.5Pa, the power is 20W, and the thickness of the deposited F3 layer is 10 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is a ZnO film with insufficient oxygen;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Zn target and introducing O2Depositing an interface film F4 layer on the top surface of F3 with the gas flow of 5sccm and the Ar gas flow of 55 sccm; the working pressure is 0.8Pa, the power is 10W, and the thickness of the deposited F4 layer is 2 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is a GZO thin film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, a GZO target (Ga)2O3: ZnO =0.5% to 1.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F5 layer on the top surface of F4; the working pressure is 0.1-0.3 Pa, the power is 100-200W, and the thickness of a deposited F1 layer is 45 nm;
finally, a light gray thin film solar cell front electrode is obtained, and the result is shown in figure 3.
EXAMPLE III
As shown in fig. 1, the utility model provides a preparation method of a front electrode for a thin-film solar cell, which can realize multiple colors, comprising the following steps:
s1, taking ultra-white float glass as a glass substrate S, removing dirt on the surface of the glass substrate, and activating the surface of the glass substrate;
the method specifically comprises the following steps: adopting an ion source sputtering method, introducing Ar gas with the flow rate of 35sccm, bombarding the glass substrate S, and controlling the working pressure to be 0.6Pa, the power to be 50W and the time to be 30 min;
s2, depositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate by adopting a magnetron sputtering process; the TCO transparent conductive film F1 layer is a BZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, BZO target (B)2O3: ZnO =1.0% to 2.5%: 99.5% -98.5%), introducing Ar gasDepositing a TCO transparent conductive film F1 layer on the top surface of the glass substrate S with the flow rate of 35 sccm; the working pressure is 0.3-0.9 Pa, the power is 200-250W, and the thickness of a deposited F1 layer is 60 nm;
s3, depositing an interfacial film F2 layer on the top surface of the F1 layer by adopting a magnetron sputtering process, wherein the interfacial film F2 layer is made of TiO with insufficient oxygen2A film;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Ti target and introducing O2Depositing an interface film F2 layer on the top surface of F1 with the gas flow of 6sccm and the Ar gas flow of 55 sccm; the working pressure is 0.5Pa, the power is 15W, and the thickness of the deposited F2 layer is 3 nm;
s4, depositing a metal transparent conductive film F3 layer on the top surface of the F2 layer by adopting a magnetron sputtering process, wherein the metal transparent conductive film F3 layer is a Cu film;
the method specifically comprises the following steps: adopting a radio frequency magnetron sputtering method and a Cu target, introducing Ar gas with the flow rate of 55sccm, and depositing an interface film F3 layer on the top surface of F2; the working pressure is 0.9Pa, the power is 20W, and the thickness of the deposited F3 layer is 15 nm;
s5, depositing an interfacial film F4 layer on the top surface of the F3 layer by adopting a magnetron sputtering process, wherein the interfacial film F4 layer is made of TiO with insufficient oxygen2A film;
the method specifically comprises the following steps: adopting radio frequency magnetron sputtering method, Ti target and introducing O2Depositing an interface film F4 layer on the top surface of F3 with the gas flow of 6sccm and the Ar gas flow of 55 sccm; the working pressure is 0.5Pa, the power is 15W, and the thickness of the deposited F2 layer is 3 nm;
s6, depositing a TCO transparent conductive film F5 on the top surface of the F4 layer by adopting a magnetron sputtering process, wherein the TCO transparent conductive film F5 layer is a BZO film;
the method specifically comprises the following steps: using a DC magnetron sputtering method, BZO target (B)2O3: ZnO =1.0% to 2.5%: 99.5% -98.5%), introducing Ar gas flow of 35sccm, and depositing a TCO transparent conductive film F4 layer on the top surface of the F4 layer; the working pressure is 0.3-0.9 Pa, the power is 200-250W, and the thickness of a deposited F1 layer is 60 nm;
the green thin film solar cell front electrode is finally obtained, and the result is shown in figure 4.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way; the invention is not limited to the embodiments described herein, but is capable of other embodiments according to the invention, and may be used in various other applications, including, but not limited to, industrial, or industrial. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments by the technical entity of the present invention all still belong to the protection scope of the technical solution of the present invention.
Claims (4)
1. The front electrode for the thin-film solar cell capable of realizing multiple colors comprises a glass substrate and is characterized in that a composite superposed layer provided with a TCO transparent conductive film F1, an interface film F2 layer, a metal transparent conductive film F3 layer, an interface film F4 layer and a TCO transparent conductive film F5 layer is sequentially arranged on the glass substrate s.
2. The front electrode for the thin-film solar cell capable of realizing multiple colors according to claim 1, wherein the thickness of the TCO transparent conductive film F1 layer and the TCO transparent conductive film F5 layer is 20-70 nm.
3. The front electrode for a thin-film solar cell capable of realizing multiple colors according to claim 2, wherein the thickness of the interface film F2 layer and the interface film F4 layer is 1 to 5 nm.
4. The front electrode for a thin-film solar cell capable of realizing multiple colors according to claim 3, wherein the thickness of the F3 layer is 3-25 nm.
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