CN108493264A - A kind of colour cadmium telluride diaphragm solar battery and preparation method thereof - Google Patents
A kind of colour cadmium telluride diaphragm solar battery and preparation method thereof Download PDFInfo
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- CN108493264A CN108493264A CN201810341192.0A CN201810341192A CN108493264A CN 108493264 A CN108493264 A CN 108493264A CN 201810341192 A CN201810341192 A CN 201810341192A CN 108493264 A CN108493264 A CN 108493264A
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- glass
- layer
- oxide
- cadmium telluride
- solar battery
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000005315 stained glass Substances 0.000 claims abstract description 16
- 239000003086 colorant Substances 0.000 claims abstract description 14
- 238000007740 vapor deposition Methods 0.000 claims abstract description 12
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 8
- 239000005329 float glass Substances 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 22
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 13
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 11
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 11
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 10
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000011737 fluorine Substances 0.000 claims description 6
- 229910052731 fluorine Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 239000005751 Copper oxide Substances 0.000 claims description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910000423 chromium oxide Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000006124 Pilkington process Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical group [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 claims 1
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 229910000960 colored gold Inorganic materials 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 33
- 229910000765 intermetallic Inorganic materials 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 15
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 5
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006701 autoxidation reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- DRVWBEJJZZTIGJ-UHFFFAOYSA-N cerium(3+);oxygen(2-) Chemical group [O-2].[O-2].[O-2].[Ce+3].[Ce+3] DRVWBEJJZZTIGJ-UHFFFAOYSA-N 0.000 description 1
- 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002552 dosage form Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 235000012736 patent blue V Nutrition 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical compound [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of colored cadmium telluride diaphragm solar batteries and preparation method thereof, it includes glass substrate layer successively, transparent conductive film layer, Window layer, absorbed layer, back contact, back electrode layer, encapsulating material layer and back-panel glass layer, the material that the glass substrate layer uses is is coated with the simple glass of color layers or is coated with the stained glass of antireflective coating, the simple glass is ultra-white float glass, the stained glass is formed by related colorant is added in glass, the color layers are by coloured metal, metallic compound etc. passes through sputtering, vapor deposition, vapor deposition, the methods of silk-screen printing is formed.Colour cadmium telluride diaphragm solar battery provided by the invention, various colors are various, disclosure satisfy that the demand of architectural appearance color, simultaneously compared to existing colored crystal silicon solar batteries, the present invention is at low cost, it can be achieved that flexibility, lightweight, dim light generating effect more preferably, is suitable for popularization and application.
Description
Technical field
The present invention relates to a kind of colored cadmium telluride diaphragm solar batteries and preparation method thereof, belong to solar battery technology
Field.
Background technology
It is combined and is generated electricity by way of merging two or more grid systems with building, be a kind of utilization of new energy resources form that photovoltaic system depends on building, be not
Come staple market and the important development direction of photovoltaic generation.Landscape of the building as environment and city, the requirement of appearance colour
Height, therefore the appearance harmony of photovoltaic system is also accordingly improved.The more crystal silicon solar batteries for colour are studied at present,
But crystalline silicon is most expensive solar components, and there are of high cost, solar absorption factor is low, material is very crisp for crystal silicon solar batteries
And the shortcomings of frangible, dim light effect is poor.
Cadmium telluride diaphragm solar battery is a kind of compound semiconductor film solar cell using CdTe as absorbing material,
The features such as because its energy gap is best, dim light effect is good, and absorptivity is big, and theoretical conversion efficiency is high, manufacturing cost is low is by very
The concern of more scientific research institutions and enterprise.Cadmium telluride theoretical conversion efficiency is up to 28%, and volume production highest transformation efficiency has been over
22%, and still there is wide development space.
At present still not the research for great promising cadmium telluride diaphragm solar battery colored component or
Patent.
Invention content
In view of this, in view of the deficiencies of the prior art, the present invention provide a kind of colored cadmium telluride diaphragm solar battery and
Preparation method.
In order to solve the above technical problems, technical scheme of the present invention provides firstly a kind of colored cadmium telluride diaphragm solar
Battery, it includes glass substrate layer, transparent conductive film layer, Window layer, absorbed layer, back contact, back electrode layer, package material successively
The bed of material and back-panel glass layer, it is characterised in that：The material that the glass substrate layer uses for be coated with color layers simple glass or
It is coated with the stained glass of antireflective coating, the simple glass is ultra-white float glass, and the stained glass is to be added in glass
Colorant is formed, and the color layers pass through sputtering, vapor deposition, vapor deposition, screen printing by coloured metal, metallic compound etc.
The methods of brush is formed.
Further, the color layer is selected from gold, copper, iron oxide, cobalt oxide, copper chloride etc., the glass colorant choosing
Autoxidation iron, cerium oxide, neodymia, titanium oxide, chromium oxide, copper oxide, cobalt oxide and manganese oxide etc..
Further, the thickness of the color layers is 50-300nm.
Meanwhile invention also improves the preparation method of above-mentioned colored cadmium telluride diaphragm solar battery, it is included in glass
It is sequentially depositing fluorine doped tin oxide on glass substrate and forms transparent conductive film layer, deposition cadmium sulfide formation Window layer, deposition cadmium telluride shape
Back contact, deposited metal nickel or metal molybdenum or other metal or alloy shapes are formed at absorbed layer, deposition zinc telluridse or copper chloride
At back electrode layer, the encapsulating materials such as POE, EVA and PVB is then selected to carry out the glass substrate of the good each layer of deposition and back-panel glass
Laminating packaging forms colored cadmium telluride diaphragm solar battery component of the invention.
Above-mentioned glass substrate will carry out coating film treatment before deposition, color layers be plated on simple glass or in stained glass
On plate antireflective coating, the simple glass is ultra-white float glass, and the stained glass is that coloring dosage form is added in glass
At the color layers pass through the methods of sputtering, vapor deposition, vapor deposition, silk-screen printing by coloured metal, metallic compound etc.
It is formed.The color layer is selected from gold, copper, iron oxide, cobalt oxide, copper chloride etc., and the glass colorant is selected from iron oxide, oxidation
Cerium, neodymia, titanium oxide, chromium oxide, copper oxide, cobalt oxide and manganese oxide etc..
The color explanation presented below by each metal, metallic compound：
Au：Glass is in yellow after plated film.
Cu:Glass is in reddish orange after plated film.
Fe2O3:Glass is in rufous after plated film.
CoO：Glass is in pink after plated film.
CuCl2:Glass is in green after plated film.
TiO2：Strong to absorb ultraviolet light, absorption band, which enters visible region purple blue light components, makes glass show brown color.
Ti2O3：Reducing condition is purple in phosphate glass.
Cr2O3：Green glass.
Cr2O6：Yellow glass.
Mn2O3：It is deeper to aoxidize stronger coloring for purple.It is brown in sodium borate, is brownish red in lead silicate.
FeO：Blue-green glass.
Fe2O3：Chartreuse or yellow glass.
CoO6：Inclined purple forms purple glass in low alkali borate, phosphate
CoO4：It is partially blue, it is more in silicate.
Co2O3：0.01% can make glass be in navy blue.
CuO：Sky blue glass.
Ce2O3：Pale-yellow galss.
Nd2O3：Aubergine glass.
Further, the mode of plated film is sputtering, vapor deposition, vapor deposition, silk-screen printing etc. in the glass substrate.
Further, the depositional mode of each layer uses low temperature depositing mode in the glass substrate, avoids glass deformation.
The glass substrate that existing cadmium telluride diaphragm solar battery uses is mainly the float glass of high pass rate, mainly
Through ranging from all visible wavelengths of light wave, after the processing of thin-film solar cells related process, back end color is often
For black.The present invention makes glass lined by plating the formation such as coloured metal, metallic compound color layers on simple glass
Tail band has color, or directly selects stained glass and plate antireflective coating on stained glass as glass substrate, makes cadmium telluride
The various colors of thin-film solar cells are various, meet the requirement of optoelectronic integration building.
Compared with prior art, colored cadmium telluride diaphragm solar battery provided by the invention, various colors are various, can
Meet the needs of architectural appearance color, while compared to existing colored crystal silicon solar batteries, the present invention it is at low cost, it can be achieved that
Flexibility, lightweight, dim light generating effect more preferably, are suitable for popularization and application.
Description of the drawings
Fig. 1 is the structural schematic diagram of the colored cadmium telluride diaphragm solar battery of the present invention.
Specific implementation mode
It is below in conjunction with the accompanying drawings and specific real in order to make those skilled in the art more fully understand technical scheme of the present invention
Applying mode, the present invention is described in further detail.
Referring to Fig. 1, the present invention provides a kind of colored cadmium telluride diaphragm solar batteries, it includes glass substrate layer successively
1, transparent conductive film layer 2, Window layer 3, absorbed layer 4, back contact 5, back electrode layer 6, encapsulating material layer 7 and back-panel glass layer 8,
The material that the glass substrate layer 1 uses is described to be coated with the simple glass of color layers or being coated with the stained glass of antireflective coating
Simple glass is common ultra-white float glass, and the stained glass is that colorant is added in glass solution to be formed, the color
Layer is formed by coloured metal, metallic compound etc. by the methods of sputtering, vapor deposition, vapor deposition, silk-screen printing.
Further, the color layer is selected from gold, copper, iron oxide, cobalt oxide, copper chloride etc., the glass colorant choosing
Autoxidation iron, cerium oxide, neodymia, titanium oxide, chromium oxide, copper oxide, cobalt oxide and manganese oxide etc..
Further, the thickness of the color layers is 100-300nm.
Illustrate the preparation method of colored cadmium telluride diaphragm solar battery of the invention with specific implementation mode below.
Embodiment 1：
A kind of preparation method of colour cadmium telluride diaphragm solar battery, includes the following steps：
(1) prepare glass substrate：Use common float glass for glass substrate raw material, using PVD modes in common float glass process
Metallic gold is plated on glass and forms color layers, and the thickness of color layers is 100nm；
(2) chemical vapour deposition technique or magnetron sputtering method is used to deposit fluorine doped tin oxide on a glass substrate and form transparent lead
Electrolemma layer；
Cadmium sulfide layer is deposited on transparent conductive film layer using magnetron sputtering method or chemical bath method and forms Window layer；
Cadmium telluride is deposited in Window layer using magnetron sputtering method or vapour deposition method and forms absorbed layer；
Zinc telluridse is deposited on absorbed layer using magnetron sputtering method and forms back contact；
Using magnetron sputtering method, deposited metal nickel forms back electrode layer on back contact；
(3) it selects POE encapsulating materials that the glass substrate of the good each layer of deposition is carried out laminating packaging with back-panel glass and forms this
The colored cadmium telluride diaphragm solar battery component of invention.
Embodiment 2：
A kind of preparation method of colour cadmium telluride diaphragm solar battery, includes the following steps：
(1) prepare glass substrate：It uses ultra-clear glasses for glass substrate raw material, is plated in ultra-clear glasses using CVD modes
Upper metallic compound cerium oxide forms color layers, and the thickness of color layers is 150nm；
(2) chemical vapour deposition technique or magnetron sputtering method is used to deposit fluorine doped tin oxide on a glass substrate and form transparent lead
Electrolemma layer；
Cadmium sulfide layer is deposited on transparent conductive film layer using magnetron sputtering method or chemical bath method and forms Window layer；
Cadmium telluride is deposited in Window layer using magnetron sputtering method or vapour deposition method and forms absorbed layer；
Copper chloride is deposited on absorbed layer using magnetron sputtering method and forms back contact；
Using magnetron sputtering method, deposited metal molybdenum forms back electrode layer on back contact；
(3) it selects EVA encapsulating materials that the glass substrate of the good each layer of deposition is carried out laminating packaging with back-panel glass and forms this
The colored cadmium telluride diaphragm solar battery component of invention.
Embodiment 3：
A kind of preparation method of colour cadmium telluride diaphragm solar battery, includes the following steps：
(1) prepare glass substrate：Use tempered glass for glass substrate raw material, using screen printing mode in tempered glass
On plate metallic compound copper chloride and form color layers, the thickness of color layers is 300nm；
(2) chemical vapour deposition technique or magnetron sputtering method is used to deposit fluorine doped tin oxide on a glass substrate and form transparent lead
Electrolemma layer；
Cadmium sulfide layer is deposited on transparent conductive film layer using magnetron sputtering method or chemical bath method and forms Window layer；
Cadmium telluride is deposited in Window layer using magnetron sputtering method or vapour deposition method and forms absorbed layer；
Copper chloride is deposited on absorbed layer using magnetron sputtering method and forms back contact；
Using magnetron sputtering method, deposited metal nickel forms back electrode layer on back contact；
(3) it selects PVB encapsulating materials that the glass substrate of the good each layer of deposition is carried out laminating packaging with back-panel glass and forms this
The colored cadmium telluride diaphragm solar battery component of invention.
Embodiment 4：
A kind of preparation method of colour cadmium telluride diaphragm solar battery, includes the following steps：
(1) prepare glass substrate：Use the stained glass containing colorant cobalt oxide for glass substrate raw material, using CSS
Mode plates antireflective coating on stained glass；
(2) chemical vapour deposition technique or magnetron sputtering method is used to deposit fluorine doped tin oxide on a glass substrate and form transparent lead
Electrolemma layer；
Cadmium sulfide layer is deposited on transparent conductive film layer using magnetron sputtering method or chemical bath method and forms Window layer；
Cadmium telluride is deposited in Window layer using magnetron sputtering method or vapour deposition method and forms absorbed layer；
Zinc telluridse is deposited on absorbed layer using magnetron sputtering method and forms back contact；
Using magnetron sputtering method, deposited metal molybdenum forms back electrode layer on back contact；
(3) it selects POE encapsulating materials that the glass substrate of the good each layer of deposition is carried out laminating packaging with back-panel glass and forms this
The colored cadmium telluride diaphragm solar battery component of invention.
It should be pointed out that the above embodiment is not construed as limitation of the present invention, protection scope of the present invention should
It is subject to claim limited range.For those skilled in the art, do not departing from the present invention's
In spirit and scope, several improvements and modifications can also be made, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (9)
1. a kind of colour cadmium telluride diaphragm solar battery includes glass substrate layer, transparent conductive film layer, Window layer, suction successively
Receive layer, back contact, back electrode layer, encapsulating material layer and back-panel glass layer, it is characterised in that：What the glass substrate layer used
Material is the simple glass for being coated with color layers or the stained glass for being coated with antireflective coating, and the simple glass is common ultrawhite float glass process
Glass, the stained glass are that colorant is added in glass solution to be formed, and the color layers are by coloured metal or metal
Oxide is formed.
2. a kind of colored cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that：The colour layer choosing
From gold, copper, iron oxide, cobalt oxide, copper chloride etc., the glass colorant be selected from iron oxide, cerium oxide, neodymia, titanium oxide,
Chromium oxide, copper oxide, cobalt oxide and manganese oxide etc..
3. a kind of colored cadmium telluride diaphragm solar battery according to claim 1, it is characterised in that：The color layers
Thickness is 50-300nm.
4. a kind of preparation method of colour cadmium telluride diaphragm solar battery, including it is sequentially depositing fluorine doped oxidation on a glass substrate
Tin forms transparent conductive film layer, deposition cadmium sulfide forms Window layer, deposition cadmium telluride forms absorbed layer, deposition zinc telluridse or chlorination
Copper forms back contact, deposited metal nickel or metal molybdenum or other metal or alloy form back electrode layer, then selects package material
The glass substrate of the good each layer of deposition is carried out laminating packaging by material with back-panel glass, it is characterised in that：The glass substrate is depositing
Before to carry out coating film treatment, color layers are plated on simple glass or plate antireflective coating on stained glass, the common glass
Glass is ultra-white float glass, and the stained glass is that colorant is added in glass to be formed, and the color layers are by coloured gold
Belong to or metal oxide is formed.
5. a kind of preparation method of colored cadmium telluride diaphragm solar battery according to claim 4, it is characterised in that：Institute
It states color layer and is selected from gold, copper, iron oxide, cobalt oxide, copper chloride etc., the glass colorant is selected from iron oxide, cerium oxide, oxidation
Neodymium, titanium oxide, chromium oxide, copper oxide, cobalt oxide and manganese oxide etc..
6. a kind of preparation method of colored cadmium telluride diaphragm solar battery according to claim 4, it is characterised in that：Institute
The thickness for stating color layers is 50-300nm.
7. a kind of preparation method of colored cadmium telluride diaphragm solar battery according to claim 4, it is characterised in that：Institute
The mode for stating plated film in glass substrate is selected from sputtering, vapor deposition, vapor deposition and silk-screen printing.
8. a kind of preparation method of colored cadmium telluride diaphragm solar battery according to claim 4, it is characterised in that：Institute
The depositional mode for stating each layer in glass substrate uses low temperature depositing mode.
9. a kind of preparation method of colored cadmium telluride diaphragm solar battery according to claim 4, it is characterised in that：Institute
It states encapsulating material and is selected from POE, EVA and PVB.
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| CN111540792A (en) * | 2020-05-09 | 2020-08-14 | 成都中建材光电材料有限公司 | Color cadmium telluride power generation glass and manufacturing method thereof |
| CN112909115A (en) * | 2021-01-22 | 2021-06-04 | 成都中建材光电材料有限公司 | Double-sided power generation glass assembly and preparation method thereof |
| CN113066883A (en) * | 2021-03-16 | 2021-07-02 | 成都中建材光电材料有限公司 | Colorful heat-insulating fireproof power generation glass and preparation method thereof |
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| CN113066883A (en) * | 2021-03-16 | 2021-07-02 | 成都中建材光电材料有限公司 | Colorful heat-insulating fireproof power generation glass and preparation method thereof |
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