CN204144324U - Solar photovoltaic cell panel - Google Patents
Solar photovoltaic cell panel Download PDFInfo
- Publication number
- CN204144324U CN204144324U CN201420655126.8U CN201420655126U CN204144324U CN 204144324 U CN204144324 U CN 204144324U CN 201420655126 U CN201420655126 U CN 201420655126U CN 204144324 U CN204144324 U CN 204144324U
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- CN
- China
- Prior art keywords
- layer
- indium gallium
- copper indium
- zinc oxide
- gallium selenide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model relates to a kind of solar photovoltaic cell panel, and it is divided into two-layer up and down, and it is calcium titanium ore bed at the middle and upper levels, and described calcium titanium ore bed is made up of upper transparency conducting layer, perovskite absorbed layer, lower transparency conducting layer; Lower floor is Copper Indium Gallium Selenide layer, described Copper Indium Gallium Selenide layer is made up of doped zinc oxide aluminium conductive layer, zinc oxide film, cadmium sulphide membrane layer, CuInGaSe absorbed layer, molybdenum conductive layer, soda-lime glass basic unit, the absorption of wide spectral can be added, make the unabsorbed photon through topmost thin film calcium titanium ore bed, can continue to be absorbed in lower film Copper Indium Gallium Selenide, transfer ratio more than 30%, and can have high-conversion rate function, is applicable to batch production.
Description
Technical field
The utility model belongs to energy-conserving and environment-protective field, relates to a kind of solar photovoltaic cell panel specifically.
Background technology
Existing thin film solar photovoltaic battery panel, comprise Copper Indium Gallium Selenide (CIGS) thin-film photovoltaic solar photovoltaic battery panel, material cost is lower than general crystal silicon solar photovoltaic battery panel, but some film production structure is too complicated, make total manufacturing cost higher, cannot commercialization.
Up to the present, the production cost of general thin film solar manufacturing firm, not yet can, lower than the production cost of kerosene generating, hinder thin film solar to enter merchandized handling; And average turnovers aspect, also can only close to crystalline silicon, or slightly lower than crystalline silicon, need to be improved further.
General perovskite solar photovoltaic cell panel, uses hundreds of sodium rice, has or without the absorbed layer of mesoporous support, sandwich at electronics (ETL) and hole (HTL) transfer layer; When absorbed layer adopts sodium to photon, absorbed layer carrier transmits electric charge and hole two terminations to positive and negative electrode; Strengthen conversion efficiency, correctly need handle each interface of carrier process well, by energy downward sliding function function, optimize each boundary layer, comprising: transparent front electrode layer, titanium dioxide shelf layer, perovskite absorbed layer, and transparent spiral shell Dimethoxyphenyl hole transport layer etc.
Relevant hole transport layer (HTL), due to this material expensive, and has a strong impact on the life-span of battery, and our another kind of way removes general mesoporous methylamine bustamentite (mesoscopic CH
3nH
3pbI
3/ TiO
2) hole transport layer (HTL) that perovskite solar photovoltaic cell panel is conventional, we use methylamine iodine (CH3NH3I) and two change bustamentite (PbI2) liquid depositions in titanium dioxide (TiO2) shelf layer here; Make methylamine bustamentite calcium titanium layer (CH3NH3PbI3) have photonic absorption and hole to transmit two kinds of functions simultaneously.
Utility model content
For deficiency of the prior art, the technical problems to be solved in the utility model there are provided a kind of solar photovoltaic cell panel.
For solving the problems of the technologies described above, the utility model is realized by following scheme:
A kind of solar photovoltaic cell panel, it is characterized in that, it is divided into two-layer up and down, and it is calcium titanium ore bed at the middle and upper levels, and described calcium titanium ore bed is made up of upper transparency conducting layer, perovskite absorbed layer, lower transparency conducting layer, lower floor is Copper Indium Gallium Selenide layer, described Copper Indium Gallium Selenide layer is by doped zinc oxide aluminium conductive layer, zinc oxide film, cadmium sulphide membrane layer, CuInGaSe absorbed layer, molybdenum conductive layer, soda-lime glass basic unit forms, described calcium titanium ore bed and Copper Indium Gallium Selenide layer two ganglionic layer are overlapping, centre is provided with transparent insulating layer, the thickness of described soda-lime glass basic unit is between 1 ~ 4mm, described molybdenum conductive layer is molybdenum film, described CuInGaSe absorbed layer is the CIGS thin-film of 1.0 micron nominal thickness, described cadmium sulfide layer adopts the cadmium sulfide layer of 0.05 micron thickness, described zinc oxide film is the insulating barrier of 0.1 micron thickness, described doped zinc oxide aluminium conductive layer is the conductive transparent layer of 0.35 micron thickness, surface is provided with the first nickel dam of 0.05 micron thickness thereon, for strengthening the conductive grid of superficial layer conductance, described first nickel dam upper surface is provided with the aluminum membranous layer of 3.0 micron thickness, this aluminum membranous layer is the conductive grid of most last layer, surface is covered with the second nickel dam of 0.05 micron thickness thereon, this second nickel dam is for the protection of aluminum membranous layer, described second nickel dam is provided with the sodium calcium cover glass layer of 3.2 millimeters of standard thicknesses.
Beneficial effect:
The utility model adopts " X " light fluorescence analyser to check the atomic percent of Copper Indium Gallium Selenide four element, and after about 250 ° of C sputter coatings, four elemental compositions in target and film almost do not have anything to change.Meanwhile, Copper Indium Gallium Selenide four element atomic component, is just meeting the composition needed for optimized " alpha phase ".Use low-temperature sputter, selenium can not be made to run off, and can promote that glass substrate is exitted, promote the degree of adhesion between film, and start the growth of Copper Indium Gallium Selenide crystal.
Solar photovoltaic cell panel of the present utility model can add the absorption of wide spectral, make the unabsorbed photon through topmost thin film calcium titanium ore bed, can continue to be absorbed in lower film Copper Indium Gallium Selenide, transfer ratio can more than 30%, therefore, in use, novelty is had more than traditional perovskite, copper indium gallium selenium solar photovoltaic battery panel, make the unabsorbed photon through topmost thin film calcium titanium ore bed, can continue to be absorbed in lower film Copper Indium Gallium Selenide, transfer ratio more than 30%, and can have applicable batch production, the advantages such as high-conversion rate.
Accompanying drawing explanation
Fig. 1 is the utility model solar photovoltaic cell panel structural representation.
Fig. 2 is the utility model Copper Indium Gallium Selenide layer cross sectional representation.
Mark in accompanying drawing: the calcium titanium ore bed 1 on upper strata; The Copper Indium Gallium Selenide layer 2 of lower floor; Upper transparency conducting layer 3; Perovskite absorbed layer 4; Lower transparency conducting layer 5; Doped zinc oxide aluminium conductive layer 6; Zinc oxide film 7; Cadmium sulphide membrane layer 8; CuInGaSe absorbed layer 9; Molybdenum conductive layer 10; Soda-lime glass basic unit 11; First nickel dam 12; Aluminum membranous layer 13; Second nickel dam 14; Sodium calcium cover glass layer 15.
Embodiment
Below in conjunction with drawings and Examples, the technical solution of the utility model is explained in detail.
A kind of solar photovoltaic cell panel, it is characterized in that, it is divided into two-layer up and down, and it is calcium titanium ore bed at the middle and upper levels, and described calcium titanium ore bed is made up of upper transparency conducting layer, perovskite absorbed layer, lower transparency conducting layer, lower floor is Copper Indium Gallium Selenide layer, described Copper Indium Gallium Selenide layer is by doped zinc oxide aluminium conductive layer, zinc oxide film, cadmium sulphide membrane layer, CuInGaSe absorbed layer, molybdenum conductive layer, soda-lime glass basic unit forms, described calcium titanium ore bed and Copper Indium Gallium Selenide layer two ganglionic layer are overlapping, centre is provided with transparent insulating layer, the thickness of described soda-lime glass basic unit is between 1 ~ 4mm, described molybdenum conductive layer is molybdenum film, described CuInGaSe absorbed layer is the CIGS thin-film of 1.0 micron nominal thickness, described cadmium sulfide layer adopts the cadmium sulfide layer of 0.05 micron thickness, described zinc oxide film is the insulating barrier of 0.1 micron thickness, described doped zinc oxide aluminium conductive layer is the conductive transparent layer of 0.35 micron thickness, surface is provided with the first nickel dam of 0.05 micron thickness thereon, for strengthening the conductive grid of superficial layer conductance, described first nickel dam upper surface is provided with the aluminum membranous layer of 3.0 micron thickness, this aluminum membranous layer is the conductive grid of most last layer, surface is covered with the second nickel dam of 0.05 micron thickness thereon, this second nickel dam is for the protection of aluminum membranous layer, described second nickel dam is provided with the sodium calcium cover glass layer of 3.2 millimeters of standard thicknesses.
Last it is noted that obviously, above-described embodiment is only for the utility model example is clearly described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among protection range of the present utility model.
Claims (1)
1. a solar photovoltaic cell panel, is characterized in that, it is divided into two-layer up and down, and it is calcium titanium ore bed at the middle and upper levels, and described calcium titanium ore bed is made up of upper transparency conducting layer, perovskite absorbed layer, lower transparency conducting layer, lower floor is Copper Indium Gallium Selenide layer, described Copper Indium Gallium Selenide layer is by doped zinc oxide aluminium conductive layer, zinc oxide film, cadmium sulphide membrane layer, CuInGaSe absorbed layer, molybdenum conductive layer, soda-lime glass basic unit forms, described calcium titanium ore bed and Copper Indium Gallium Selenide layer two ganglionic layer are overlapping, centre is provided with transparent insulating layer, the thickness of described soda-lime glass basic unit is at 1-4mm, described molybdenum conductive layer is molybdenum film, described CuInGaSe absorbed layer is the CIGS thin-film of 1.0 micron nominal thickness, described cadmium sulfide layer adopts the cadmium sulfide layer of 0.05 micron thickness, described zinc oxide film is the insulating barrier of 0.1 micron thickness, described doped zinc oxide aluminium conductive layer is the conductive transparent layer of 0.35 micron thickness, surface is provided with the first nickel dam of 0.05 micron thickness thereon, for strengthening the conductive grid of superficial layer conductance, described first nickel dam upper surface is provided with the aluminum membranous layer of 3.0 micron thickness, this aluminum membranous layer is the conductive grid of most last layer, surface is covered with the second nickel dam of 0.05 micron thickness thereon, this second nickel dam is for the protection of aluminum membranous layer, described second nickel dam is provided with the sodium calcium cover glass layer of 3.2 millimeters of standard thicknesses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420655126.8U CN204144324U (en) | 2014-11-05 | 2014-11-05 | Solar photovoltaic cell panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420655126.8U CN204144324U (en) | 2014-11-05 | 2014-11-05 | Solar photovoltaic cell panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204144324U true CN204144324U (en) | 2015-02-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420655126.8U Expired - Fee Related CN204144324U (en) | 2014-11-05 | 2014-11-05 | Solar photovoltaic cell panel |
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| CN (1) | CN204144324U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021132233A (en) * | 2016-09-21 | 2021-09-09 | 株式会社東芝 | Solar cell module and solar power generation system |
| WO2023181733A1 (en) * | 2022-03-25 | 2023-09-28 | 株式会社カネカ | Stack-type solar cell string, solar cell module, and method for manufacturing solar cell module |
-
2014
- 2014-11-05 CN CN201420655126.8U patent/CN204144324U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021132233A (en) * | 2016-09-21 | 2021-09-09 | 株式会社東芝 | Solar cell module and solar power generation system |
| WO2023181733A1 (en) * | 2022-03-25 | 2023-09-28 | 株式会社カネカ | Stack-type solar cell string, solar cell module, and method for manufacturing solar cell module |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150204 Termination date: 20171105 |